TC 47 - Semiconductor devices

IEC 60747-5-4:2022 specifies the terminology, the essential ratings and characteristics as well as the measuring methods of semiconductor lasers.
This edition includes the following significant technical changes with respect to the previous edition:
- References for the terms and definitions related to the lighting area, IEC 60050-845, are revised based on IEC 60050-845:2020;
- Emission angle is changed to radiation angle in 3.3.2;
- Definitions of rise time and fall time in 3.4.1 are revised based on the publication IEC 60050-521:2002;
- Spectral linewidth is added to Table 1 in Clause 4;
- Conditions for carrier-to-noise ratio of Table 1 in Clause 4 is amended.
- Error in the equation for carrier-to-noise ratio in 5.2.2 is corrected;
- Precaution against the equipment used for carrier-to-noise ratio measurement is added in 5.2.2;
- Explanation for the measurement method of the small signal cut-off frequency in 5.3.2 of the first edition is deleted because it has been defined in the latest version of ISO 11554;
- Reference document for the lifetime in 5.4 is amended;
- Precaution against the measuring arrangement used for the half-intensity width and 1/e2-intensity is added in 5.5.3;
- Reference tables in Annex A, Annex B and Annex C are revised by following the latest version of ISO publications.

IEC 63378-2-1:2024 specifies three-dimensional (3D) thermal models of discrete semiconductor packages (TO-243, TO-252 and TO-263), utilized in the steady-state thermal analysis of electronic devices to estimate junction temperatures accurately.
This model is assumed to be made by semiconductor suppliers and to be used by assembly makers of electronic devices.

IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition:
a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C);
b) The thermal resistance is described for each switch (6.2.4);
c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).

IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.

IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.

IEC 62047-48:2024 specifies the requirements and testing method to determine the solution concentration by optical absorption using MEMS fluidic device.

IEC 62047-43:2024 specifies the test method of electrical characteristics after cyclic bending deformation for flexible electromechanical devices. These devices include passive micro components and active micro components on the flexible film or embedded in the flexible film. The desired in-plane dimensions of the device for the test method ranges typically from 1 mm to 300 mm and the thickness ranges from 10 μm to 1 mm, but these are not limiting values. The test method is so designed as to understand and further visualize the entire performance deterioration behaviour after cyclic bending deformation in a concept of 3D (P-S-N: Performance - Severity of bending - Number of cycles) plot over the loading space of severity of bending and number of repeated cycles. This document is essential to estimate safety margin over the operation period under a certain level of cyclic bending deformation and indispensable for reliable design of the product employing these devices.

IEC 62047-44:2024 describes terminology, definitions and test methods that are used to evaluate and determine the dynamic performance of MEMS (Micro-Electromechanical Systems) resonant electric‑field‑sensitive devices. It also specifies sample requirements and test equipment for dynamic performances of MEMS resonant electric‑field‑sensitive devices. The statements made in this document are also applicable to MEMS resonant electric‑field‑sensitive devices with various driving mechanisms such as electrostatic, electrothermal, electromagnetic, piezoelectric, etc.

IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition:
a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test;
b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment;
c) replacement of references to “virtual junction” with “die”.

IEC 61967-8:2023 defines a method for measuring the electromagnetic radiated emission from an integrated circuit (IC) using an IC stripline. The IC being evaluated is mounted on an EMC test board (PCB) between the active conductor and the ground plane of the IC stripline arrangement. This edition includes the following significant technical changes with respect to the previous edition:
a) frequency range of 150 kHz to 3 GHz was deleted from the scope;
b) extension of upper usable frequency to 6 GHz or higher as long as the defined requirements are fulfilled.

IEC 63287-2:2023 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.

IEC 60747-5-16:2023 specifies the measuring method of flat-band voltage of single GaN-based light emitting diode (LED) die or package without phosphor, based on the photocurrent (PC) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747.

IEC 60747-18-4:2023(E) specifies the evaluation method for noise characteristics of lens-free CMOS photonic array sensors. This document includes the measurement setup, test procedure, test items, evaluation method, and test report for noise characteristics of lens-free CMOS photonic array sensors.

IEC 60747-18-5:2023(E) specifies the evaluation method for light responsivity characteristics of lens-free CMOS photonic array sensor package modules by incident angle of light. This document includes the test setup, test procedure, test item, and test report for lens-free CMOS photonic array sensor package modules.

IEC 62951-8:2023 (E) defines terms and specifies the test method for evaluating the stretchability, flexibility, and stability of flexible resistive memory. The test method descriptions include experimental procedures and the equipment to be used. It also includes general requirements for test conditions such as the temperature and relative humidity of the testing environment. The test method described in this document focuses on stability evaluation rather than reliability.

IEC 62951-9:2022(E) specifies the test methods for evaluating the performance of unipolar-type one transistor one resistor (1T1R) resistive memory cells. The performance test methods in this document include read, forming, SET, RESET, endurance and retention. This document is applicable to flexible devices as well as rigid resistive memory devices without any limitations prone to device technology and size.

IEC 63364-1:2022 specifies terms, the test method, and the report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.

IEC 60747-16-7:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.

IEC 60747-16-8:2022 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.

IEC 62228-6:2022 specifies test and measurement methods for EMC evaluation of peripheral sensor interface 5 (PSI5) transceiver integrated circuits (ICs) under network condition. It defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards. It is applicable for PSI5 satellite ICs (e.g. sensors) and ICs with embedded PSI5 transceivers (e.g. PSI5 electronic control unit IC). The document covers
the emission of RF disturbances,
the immunity against RF disturbances,
the immunity against impulses, and
the immunity against electrostatic discharges (ESD).

IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition:
- correction of a previous technical error concerning test conditions;
- updates to reflect improvements in technology.

IEC TR 63357:2022(E) describes standardization roadmap of fault test methods for integrated circuits used in automotive vehicles. Since automotive vehicles are exposed in harsh environment such as very low or high temperature, vibration, high frequency signals, etc. Therefore, they are tested for possible faults which can be caused by harsh environment. There are several fault test methods and related issues to be standardized.
Semiconductor devices used in automotive vehicles are exposed in harsh environment of very high or very low temperature, vibration, high frequency signals, etc. Therefore, they are tested for possible faults which can be caused by harsh environment Evaluation results following this fault test methods will provide robustness of the semiconductor device.

IEC 62047-42:2022 specifies measuring methods of electro-mechanical conversion characteristics of piezoelectric thin film on microcantilever, which is typical structure of actual micro sensors and micro actuators. In order to obtain actual and precise piezoelectric coefficient of the piezoelectric thin films with microdevice structures, and this document reports the schema to determine the characteristic parameters for consumer, industry or any other applications of piezoelectric devices. This document applies to piezoelectric thin films on microcantilever fabricated by MEMS process.

IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.

IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.

IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification.
This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:  
covers both unattached components and components attached to printed wiring boards;
tolerance limits modified for peak acceleration and pulse duration;
mathematical formulae added for velocity change and equivalent drop height.

IEC 63275-1:2022 gives a test method to evaluate gate threshold voltage shift of silicon carbide (SiC) power metal-oxide-semiconductor field-effect transistors (MOSFETs) using room temperature readout after applying continuous positive gate-source voltage stress at elevated temperature. The proposed method accepts a certain amount of recovery by allowing large delay times between stress and measurement (up to 10 h).

IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

IEC 60747-5-14:2022(E) specifies the measuring method of the surface temperature of single LED die or package, based on the thermoreflectance (TR) method. TR is the effect that the reflectance of light changes with the temperature of a substance. This part measures relative change in the reflectance of light from a metal film deposited nearby on the metallurgical pn junction as the relative change in the LED junction temperature. The surface temperature can be approximated as the junction temperature when the thermal resistance effect between the metal surface and the pn junction is negligibly small.

IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition:
- a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages;
- changes to clarify cleaning of devices and testers.

IEC 62228-7:2022 specifies test and measurement methods for the EMC evaluation of CXPI transceiver ICs under network condition. It defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards. This specification is applicable for standard CXPI transceiver ICs and ICs with embedded CXPI transceiver and covers
the emission of RF disturbances,
the immunity against RF disturbances,
the immunity against impulses and
the immunity against electrostatic discharges (ESD).

IEC 63373:2022 In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. IEC 63373:2022 provides guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following:
a) GaN enhancement and depletion-mode discrete power devices;
b) GaN integrated power solutions;
c) the above in wafer and package levels.
The prescribed test methods can be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

IEC 60747-5-15:2022(E) specifies the measuring methods of flat-band voltage of single GaN‑based light emitting diode (LED) die or package without phosphor, based on the electroreflectance (ER) spectroscopy. White LEDs for lighting applications are out of the scope of this part of IEC 60747-5.

IEC TR 63378-1:2021(E) specifies the terms and definitions that are commonly used for thermal characteristics of BGA and QFP type semiconductor packages, and guidelines to use these thermal characteristics.

IEC 60749-39:2021 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. This edition includes the following significant technical changes with respect to the previous edition:
- updated procedure for "dry weight" determination.

IEC 62830-8:2021(E) specifies terms, definitions, symbols, test, and evaluation methods used to determine the performance characteristics of flexible and stretchable supercapacitor for practical use in low power electronics such as energy storage devices for energy harvesting, flexible and stretchable electronics, low-power devices, IoT applications, etc. This document is applicable to all the flexible and stretchable supercapacitor for consumers and manufacturers, without any limitations of device technology and size.

IEC TR 60747-5-12:2021(E) discusses the terminology and the measuring methods of optoelectronic efficiencies of single light emitting diode (LED) chip or package without phosphor. White LEDs for lighting applications are out of the scope of this part.
This technical report provides guidance on
- terminology of optoelectronic efficiencies of single LED chip or package without phosphor, such as the power efficiency (PE), the external quantum efficiency (EQE), the voltage efficiency (VE), the light extraction efficiency (LEE), the internal quantum efficiency (IQE), the injection efficiency (IE), and the radiative efficiency (RE);
- test methods of optoelectronic efficiencies of the PE, the EQE, the VE, the LEE, and the IQE;
- review of various IQE measurement methods reported so far in view of accuracy and practical applicability;
- the measuring method of the LED IQE based on the temperature-dependent electroluminescence (TDEL);
- the measuring method of the LED IQE based on the room-temperature reference-point method (RTRM);
- the measuring method of the radiative and nonradiative currents of an LED;
- the relationship between the IQE and the VE, which leads to introduction of a new LED efficiency, the active efficiency (AE) as AE = VE × IQE.

IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions.
This document also describes classifications of the wireless power transfer technologies.

IEC 62047-40:2021(E) specifies the test conditions and methods of micro-electromechanical inertial shock switch threshold. This document applies to normally open micro-electromechanical inertial shock switch.

IEC 63287-1:2021 gives guidelines for reliability qualification plans of semiconductor integrated circuit products. This document is not intended for military- and space-related applications.
NOTE 1 The manufacturer can use flexible sample sizes to reduce cost and maintain reasonable reliability by this guideline adaptation based on EDR-4708, AEC Q100, JESD47 or other relevant document can also be applicable if it is specified.
NOTE 2 The Weibull distribution method used in this document is one of several methods to calculate the appropriate sample size and test conditions of a given reliability project.
This first edition of IEC 63287-1 cancels and replaces the first edition of IEC 60749-43 published in 2017. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous edition:
the document has been renamed and renumbered to distinguish it from the IEC 60749 (all parts);
a new section concerning the concept of "family" has been added with appropriate renumbering of the existing text.

IEC 62435-9:2021 specifies storage practices encompassing silicon and semiconductor device building blocks of all types that are integrated together to into products in the form of either packages or boards that can be stored as fully assembled units or partial assemblies. Special attention is given to memories as components and assemblies although methods also apply to heterogeneous components. Guidelines and requirements for customer-supplier interaction are provided to manage the complexity.
NOTE In IEC 62435 (all parts), the term "components" is used interchangeably with dice, wafers, passives and packaged devices.

IEC 60747-5-6:2021 specifies the terminology, the essential ratings and characteristics, the measuring methods and the quality evaluations of light emitting diodes (LEDs) for general industrial applications such as signals, controllers, sensors, etc.
LEDs for lighting applications are out of the scope of this part of IEC 60747.
LEDs are classified as follows:
- LED package;
- LED flat illuminator;
- LED numeric display and alpha-numeric display;
- LED dot-matrix display;
- infrared-emitting diode (IR LED);
- ultraviolet-emitting diode (UV LED).
LEDs with a heat spreader or having a terminal geometry that performs the function of a heat spreader are within the scope of this part of IEC 60747.
An integration of LEDs and controlgears, integrated LED modules, semi-integrated LED modules, integrated LED lamps or semi-integrated LED lamps, are out of the scope of this part of IEC 60747. This edition includes the following significant technical changes with respect to the previous edition:
- ultraviolet-emitting diodes (UV LED) and their related technical contents were added;
- power efficiency (ηPE) as part of electrical and optical characteristics were added;
- new measuring methods related to thermal resistance were added;
- hydrogen sulphide corrosion test was added to quality evaluation;
- some standards were added to the bibliography.

IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.

IEC 62047-38:2021(E) specifies a test method for measuring the adhesion strength of metal powder paste in the electrical interconnection between micro-electromechanical systems (MEMS) and a circuit board. The typical examples of metal powder paste are anisotropic conductive paste, solder paste, and nanoscale metallic inks. This testing method is valid for metal powder diameters from 10 µm and 500 µm.
In this test method, a uniaxial compression load is applied to metal powder paste using a glass lens simulating an actual MEMS device; then, the adhesion strength is measured by retracting the lens. This test method is proper when the adhesion strength should be analyzed by considering the actual contact area between the MEMS device and metal powder particles.

IEC 62047-41:2021 specifies the terminology, essential ratings and characteristics, and measuring methods of RF (Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) circulators and isolators.

IEC 60747-5-13:2021 provides the accelerated test method to assess effects of the tarnishing of silver and silver alloys used for LED packages due to hydrogen sulphide. Particularly, this test method is intended to give information on silver and silver alloy tarnishing effects to the luminous/radiant flux maintenance of LED packages. Additionally, this test method can give information on electric performances of LED packages due to corrosion of silver and silver alloys.
The object of this test is to determine the influence of atmospheres containing hydrogen sulphide on parts of LED packages made of: silver or silver alloy; silver or silver alloy protected with another layer; other metals covered with silver or silver alloy.
Testing other degradations that are susceptible to affect luminous/radiant flux maintenance and/or electric performance (e.g. degradation of copper or silicone parts) is not the object of this test. This test might not be suitable as a general corrosion test, i.e. it might not predict the behaviour of flux and/or electric characteristics and connections in industrial atmospheres. This document is applicable to LED packages for lighting applications only if referenced by an IEC SC 34A document.

IEC TS 60747-19-2:2021 provides a guideline of indication of specifications of a low-power sensor being a device or a module allowing autonomous power supply operation, which contributes to the low-power design of a smart sensing unit. Here, the smart sensing unit comprises a smart sensor, a terminal module, and a power supply, which can send output data of the smart sensor to the outside. This part also provides a guideline of indication of specifications of the power supply to drive the smart sensor(s) in the smart sensing unit. Based on these, the three components of the smart sensing unit can be easily selected and combined from the point-of-view of newly designed, low-power, smart sensing units.