IEC 62047-45:2025

IEC 62047-45 ®
Edition 1.0 2025-03
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 45: Silicon based MEMS fabrication technology – Measurement method of
impact resistance of nanostructures

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IEC 62047-45 ®
Edition 1.0 2025-03
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –

Part 45: Silicon based MEMS fabrication technology – Measurement method of

impact resistance of nanostructures

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99  ISBN 978-2-8327-0304-5

– 2 – IEC 62047-45:2025 © IEC 2025
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Requirements . 6
4.1 General . 6
4.2 In situ on-chip tester design requirements . 6
4.3 In-situ on-chip tester fabrication requirements . 9
4.4 Testing environment requirements . 9
5 Testing method. 9
5.1 General . 9
5.2 Operation process . 9
5.3 Nanostructure impact resistance testing method operation requirements . 10
5.4 Nanostructure impact resistance testing method result process . 10
6 Test report . 11
Annex A (informative) Example of thermal-drive in-situ on-chip nanostructure impact
tester . 12
A.1 General . 12
A.2 Design dimensions of the testing device . 12
A.3 Microstructures bending strength test . 14
Bibliography . 15

Figure 1 – The in-situ on-chip nanostructure impact tester . 7
Figure 2 – The three-view drawing of the in-situ on-chip tester . 8
Figure 3 – Nanostructure impact resistance testing method operation process . 10
Figure A.1 – Scheme of the thermal-drive impact tester . 12
Figure A.2 – The three-view drawing of the thermal-drive impact tester . 13
Figure A.3 – Test area . 14

Table A.1 – Dimensions for testing device . 13
Table A.2 – Microstructure bending strength test results . 14

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 45: Silicon based MEMS fabrication technology –
Measurement method of impact resistance of nanostructures

FOREWORD
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IEC 62047-45 has been prepared by subcommittee 47F: Microelectromechanical systems, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47F/497/FDIS 47F/504/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 4 – IEC 62047-45:2025 © IEC 2025
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn, or
• revised.
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 45: Silicon based MEMS fabrication technology –
Measurement method of impact resistance of nanostructures

1 Scope
This part of IEC 62047 specifies the requirements and testing method to measure the impact
resistance of nanostructures which are fabricated by micromachining technology used in silicon-
based micro-electromechanical system (MEMS).
This document is applicable to the in-situ impact resistance measurement of nanostructures
manufactured by microelectronic technology process and other micromachining technology.
In the production of MEMS devices, due to the micro/nano size, the non-ideal effect of
fabrication is greatly amplified compared with the macroscale. Surface defects, line width loss,
...