IEC 62047-47:2024
(Main)Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures
Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures
IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology.
With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
General Information
- Status
- Published
- Publication Date
- 22-Aug-2024
- Technical Committee
- SC 47F - Micro-electromechanical systems
- Current Stage
- PPUB - Publication issued
- Start Date
- 23-Aug-2024
- Completion Date
- 20-Sep-2024
Overview
IEC 62047-47:2024 specifies an in‑situ measurement method for bending strength of microstructures fabricated by micromachining technology in silicon‑based MEMS. The standard defines requirements for an on‑chip tester (testing device + testing structure) that is fabricated with the same process and on the same wafer as the MEMS device, enabling on‑wafer, optical‑microscopy‑readable measurement of bending strength without requiring intricate instruments (for example scanning probe microscopy or nanoindenters).
Key topics and requirements
- Scope: Measurement of bending strength for microstructures manufactured by microelectronic and micromachining processes (silicon‑based MEMS).
- In‑situ on‑chip tester design:
- Use a beam of constant strength to reduce stress‑concentration and extraction errors.
- Include a testing device (displacement/deflection rulers, magnifying lever, elastic beam, on‑chip needlepoint, loading segment) to transfer and read force/displacement optically.
- Drive options: off‑chip probe loading (example), on‑chip thermal or electrostatic actuation.
- Ensure the elastic beam and bonding surfaces are stronger than the beam under test to force fracture in the test structure.
- Loading segment length requirement: l > 20 μm to limit linewidth loss influence to <5%.
- Ruler resolution must be compatible with optical microscopy.
- Account for machining tolerances and surface roughness from process steps.
- Fabrication:
- Tester and test structure must be fabricated using the same process as the MEMS device; applicable materials include movable structure layers such as crystalline silicon.
- Testing method:
- Fix the chip on a probe station, apply horizontal load until fracture while observing under optical microscope, record deflection ruler reading d, and compute bending strength per the document’s formula.
- Environment: Testing should be carried out in the device’s actual manufacturing environment (on‑wafer/wafer‑level).
Applications and who uses it
- Process and reliability engineers: wafer‑level mechanical property monitoring and process control.
- MEMS designers: design validation and guidance for durable microstructure layouts and bonding areas.
- Semiconductor fabs & test labs: on‑chip qualification and batch‑level screening for defects/contamination that degrade bending strength.
- R&D teams: comparative material and process evaluation without specialized nanoindentation equipment.
Benefits include practical, low‑cost wafer‑level testing, reduced reliance on specialized metrology, and direct relevance because the tester is co‑fabricated with devices.
Related standards
- Part of the IEC 62047 series (Semiconductor devices – Micro‑electromechanical devices).
- Definitions reference IEC 62047‑45:2024 where applicable.
Frequently Asked Questions
IEC 62047-47:2024 is a standard published by the International Electrotechnical Commission (IEC). Its full title is "Semiconductor devices - Micro-electromechanical devices - Part 47: Silicon based MEMS fabrication technology - Measurement method of bending strength of microstructures". This standard covers: IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology. With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
IEC 62047-47:2024 specifies the requirements and testing method to measure the bending strength of microstructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ bending strength measurement of microstructures manufactured by microelectronic technology process and other micromachining technology. With the devices scaling, the bending strength degradation, induced by defects and contaminations, becomes more severe. This document specifies an in-situ testing method of the bending strength based on MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
IEC 62047-47:2024 is classified under the following ICS (International Classification for Standards) categories: 31.080.99 - Other semiconductor devices. The ICS classification helps identify the subject area and facilitates finding related standards.
You can purchase IEC 62047-47:2024 directly from iTeh Standards. The document is available in PDF format and is delivered instantly after payment. Add the standard to your cart and complete the secure checkout process. iTeh Standards is an authorized distributor of IEC standards.
Standards Content (Sample)
IEC 62047-47 ®
Edition 1.0 2024-08
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 47: Silicon based MEMS fabrication technology – Measurement method of
bending strength of microstructures
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IEC 62047-47 ®
Edition 1.0 2024-08
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 47: Silicon based MEMS fabrication technology – Measurement method of
bending strength of microstructures
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-9556-4
– 2 – IEC 62047-47:2024 © IEC 2024
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Requirements . 6
4.1 In-situ on-chip tester design requirements . 6
4.2 In-situ on-chip tester fabrication requirements . 8
4.3 Testing environment requirements . 8
5 Testing method . 8
5.1 General . 8
5.2 Microstructure bending strength testing method operation process . 8
5.3 Microstructure bending strength testing method result process . 9
6 Test report . 10
Annex A (informative) Examples of bending strength testing for microstructures . 11
A.1 General . 11
A.2 Design dimensions of the testing device . 11
A.3 Microstructures bending strength test . 14
Bibliography . 16
Figure 1 – The in-situ on-chip bending strength tester. 6
Figure 2 – Three-view drawing of the testing structure . 7
Figure 3 – Microstructure bending strength testing method operation process . 8
Figure 4 – Scheme of the beam of constant strength . 9
Figure 5 – Scheme of the magnifying lever . 9
Figure 6 – Scheme of the elastic beam . 10
Figure A.1 – Overall dimension labelling of the testing device . 11
Figure A.2 – Local dimension labelling of the testing device . 12
Figure A.3 – Design of the deflection ruler and the displacement ruler . 13
Figure A.4 – Test area . 15
Table 1 – Dimensions for testing structure . 9
Table A.1 – Design dimensions of the testing device. 14
Table A.2 – Microstructure bending strength test results . 15
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 47: Silicon based MEMS fabrication technology –
Measurement method of bending strength of microstructures
FOREWORD
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IEC 62047-47 has been prepared by subcommittee 47F: Micro-electromechanical systems, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47F/474/FDIS 47F/481/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
– 4 – IEC 62047-47:2024 © IEC 2024
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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 47: Silicon based MEMS fabrication technology –
Measurement method of bending strength of microstructures
1 Scope
This part of IEC 62047 specifies the requirements and testing method to measure the bending
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