IEC 62047-46:2025
(Main)Semiconductor devices - Micro-electromechanical devices - Part 46: Silicon based MEMS fabrication technology - Measurement method of tensile strength of nanoscale thickness membrane
Semiconductor devices - Micro-electromechanical devices - Part 46: Silicon based MEMS fabrication technology - Measurement method of tensile strength of nanoscale thickness membrane
IEC 62047-46:2025 specifies the requirements and testing method to measure the tensile strength of membrane with nanoscale thickness (length from 100 μm to 5 000 μm, width from 100 μm to 1 000 μm, thickness from 50 nm to 500 nm) which is fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to in-situ tensile strength measurement of nanoscale thickness membrane manufactured by microelectronics technology and related micromachining technology.
With the devices scaling, the tensile strength degradation, induced by defects and contaminations, becomes severer. This document specifies an in-situ testing method of the tensile strength of membrane with nanoscale thickness based on a MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
General Information
- Status
- Published
- Publication Date
- 22-Apr-2025
- Technical Committee
- SC 47F - Micro-electromechanical systems
- Current Stage
- PPUB - Publication issued
- Start Date
- 23-Apr-2025
- Completion Date
- 09-May-2025
Overview
IEC 62047-46:2025 defines an in‑situ tensile strength measurement method for silicon-based MEMS membranes with nanoscale thickness. The standard covers membranes fabricated by micromachining and microelectronics technology whose dimensions fall in the ranges: length 100 µm–5 000 µm, width 100 µm–1 000 µm, thickness 50 nm–500 nm. It specifies design, fabrication and test‑execution requirements for an on‑chip tester that enables tensile testing without specialized instruments such as AFM or nanoindenters.
Key topics and requirements
- Scope and applicability
- In‑situ tensile strength measurement of nanoscale thickness membranes produced in the same process and wafer as MEMS devices.
- In‑situ on‑chip tester design
- Tester integrates testing structure and testing device on one chip (on‑chip tester).
- Overlap between testing structure and testing device must exceed 30 µm to prevent detachment during test.
- End geometry must ensure fracture occurs in the mid‑section of the membrane.
- Folded beam stiffness should be at least two orders of magnitude lower than the testing structure stiffness so measured force approximates tensile force.
- Fixed column and ring structures must form a process‑limited fixed hinge to maintain axial tensile loading.
- Deflection ruler must be readable with optical microscopy (design guidance in Annex A).
- Fabrication
- Tester and device must share the same silicon process; in‑situ tester made of crystalline silicon (examples include bulk silicon processes and silicon–glass anodic bonding).
- Testing environment and method
- Tests are performed in the device’s manufacturing environment (actual MEMS chip environment).
- The method monitors device deformation under a driving load using microscopy; tensile strength is computed from the maximum observed force divided by original cross‑sectional area.
- Measurement resolution
- Aspect ratios of elastic beams and testing structures must be selected to achieve a stress measurement resolution of ≤100 MPa.
Applications and users
- MEMS device designers seeking process‑relevant mechanical property data for design validation.
- Process engineers in semiconductor fabs for monitoring tensile strength degradation due to defects or contamination.
- R&D teams developing silicon‑based micro‑electromechanical devices who need on‑wafer, non‑intrusive tensile testing.
- Test laboratories that implement wafer‑level mechanical characterization without AFM/nanoindenter equipment.
Related standards
- Part of the IEC 62047 series (Micro‑electromechanical devices). See IEC 62047‑45:2025 for related terminology and testing structure/device definitions.
Keywords: IEC 62047-46:2025, tensile strength, nanoscale thickness membrane, in‑situ on‑chip tester, silicon-based MEMS fabrication, micromachining, tensile testing.
IEC 62047-46:2025 - Semiconductor devices - Micro-electromechanical devices - Part 46: Silicon based MEMS fabrication technology - Measurement method of tensile strength of nanoscale thickness membrane Released:23. 04. 2025 Isbn:9782832703502
Frequently Asked Questions
IEC 62047-46:2025 is a standard published by the International Electrotechnical Commission (IEC). Its full title is "Semiconductor devices - Micro-electromechanical devices - Part 46: Silicon based MEMS fabrication technology - Measurement method of tensile strength of nanoscale thickness membrane". This standard covers: IEC 62047-46:2025 specifies the requirements and testing method to measure the tensile strength of membrane with nanoscale thickness (length from 100 μm to 5 000 μm, width from 100 μm to 1 000 μm, thickness from 50 nm to 500 nm) which is fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to in-situ tensile strength measurement of nanoscale thickness membrane manufactured by microelectronics technology and related micromachining technology. With the devices scaling, the tensile strength degradation, induced by defects and contaminations, becomes severer. This document specifies an in-situ testing method of the tensile strength of membrane with nanoscale thickness based on a MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
IEC 62047-46:2025 specifies the requirements and testing method to measure the tensile strength of membrane with nanoscale thickness (length from 100 μm to 5 000 μm, width from 100 μm to 1 000 μm, thickness from 50 nm to 500 nm) which is fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS). This document is applicable to in-situ tensile strength measurement of nanoscale thickness membrane manufactured by microelectronics technology and related micromachining technology. With the devices scaling, the tensile strength degradation, induced by defects and contaminations, becomes severer. This document specifies an in-situ testing method of the tensile strength of membrane with nanoscale thickness based on a MEMS technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and special test specimens. Since in-situ on-chip tester in this document and device are fabricated with the same process on the same wafer, this document can give some practical reference for the design part.
IEC 62047-46:2025 is classified under the following ICS (International Classification for Standards) categories: 31.080.99 - Other semiconductor devices. The ICS classification helps identify the subject area and facilitates finding related standards.
You can purchase IEC 62047-46:2025 directly from iTeh Standards. The document is available in PDF format and is delivered instantly after payment. Add the standard to your cart and complete the secure checkout process. iTeh Standards is an authorized distributor of IEC standards.
Standards Content (Sample)
IEC 62047-46 ®
Edition 1.0 2025-04
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 46: Silicon based MEMS fabrication technology – Measurement method of
tensile strength of nanoscale thickness membrane
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IEC 62047-46 ®
Edition 1.0 2025-04
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 46: Silicon based MEMS fabrication technology – Measurement method of
tensile strength of nanoscale thickness membrane
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8327-0350-2
– 2 – IEC 62047-46:2025 © IEC 2025
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Requirements . 6
4.1 In-situ on-chip tester design requirements . 6
4.2 In-situ on-chip tester fabrication requirements . 9
4.3 Testing environment requirements . 9
5 Testing method. 9
5.1 General . 9
5.2 Nanoscale thickness membrane tensile strength testing method operation
process . 9
5.3 Nanoscale thickness membrane tensile strength testing method operation
requirements . 10
5.4 Tensile strength in-situ on-chip tester size recommendations . 11
5.5 Tensile testing method analysis process . 11
6 Test report . 11
Annex A (informative) Examples of tensile strength testing of nanoscale thickness
membrane. 12
A.1 General . 12
A.2 Size recommendations of nanoscale thickness membrane tensile strength in-
situ on-chip tester . 12
A.3 Nanoscale thickness membrane tensile strength test . 13
Bibliography . 15
Figure 1 – In-situ on-chip tensile strength tester . 8
Figure 2 – Nanoscale thickness membrane tensile strength testing method operation
process . 10
Figure A.1 – Design of the deflection ruler and the displacement ruler . 13
Figure A.2 – Bulk silicon fabrication process example of in-situ on-chip tester . 14
Figure A.3 – Test area . 14
Table A.1 – Size recommendations of nanoscale thickness membrane tensile strength
in-situ on-chip tester and corresponding c value . 12
Table A.2 – Nanoscale thickness membrane tensile strength test results . 14
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 46: Silicon based MEMS fabrication technology –
Measurement method of tensile strength
of nanoscale thickness membrane
FOREWORD
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IEC 62047-46 has been prepared by subcommittee 47F: Micro electromechanical systems, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47F/500/FDIS 47F/507/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
– 4 – IEC 62047-46:2025 © IEC 2025
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
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devices – Micro-electromechanical devices, can be found on the IEC website.
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• reconfirmed,
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• revised.
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –
Part 46: Silicon based MEMS fabrication technology –
Measurement method of tensile strength
of nanoscale thickness membrane
1 Scope
This part of IEC 62047 specifies the requirements and testing method to measure the tensile
strength of membrane with nanoscale thickness (length from 100 μm to 5 000 μm, width from
100 μm to 1 000 μm, thickness from 50 nm to 500 nm) which is fabricated by micromachining
technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to in-situ tensile strength measurement of nanoscale thickness
membrane manufactured by microelectronics technology and related micromachining
technology.
With the devices scaling, the tensile strength degradation, induced by defects and
contaminations, becomes severer. This document specifies an in-situ testing method of the
tensile strength of membrane with nanoscale thickness based on a MEMS technique. This
document does not need intricate instruments (such as scanning probe microscopy and
nanoindenter) and special test specimens.
Since in-situ on-chip tester in this document and de
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