IEC 63505:2025

IEC 63505 ®
Edition 1.0 2025-04
INTERNATIONAL
STANDARD
Guidelines for measuring the threshold voltage (V ) of SiC MOSFETs
T
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IEC 63505 ®
Edition 1.0 2025-04
INTERNATIONAL
STANDARD
Guidelines for measuring the threshold voltage (V ) of SiC MOSFETs
T
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.30 ISBN 978-2-8327-0325-0
– 2 – IEC 63505:2025 © IEC 2025
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references. 6
3 Terms, definitions, and letter symbols . 6
3.1 Terms and definitions . 6
3.2 Letter symbols . 6
4 Requirements . 7
5 Test circuits . 8
5.1 Test circuits . 8
5.2 How to define conditioning . 11
Bibliography . 12

Figure 1 – V hysteresis observed by upward and downward sweep measurement,
T
V = V , left graph shows the gate bias pattern and right graph shows the
DS GS
corresponding drain current response . 7
DOWN
Figure 2 – V extracted from a SiC MOSFET device at different current levels
T
after biasing the device in deep inversion for 100 ms . 8
Figure 3 – Conditioning before threshold voltage measurement . 8
Figure 4 – V test circuit (upper left picture), timing diagram (right graphs) and typical
T
transfer characteristic (lower graph) . 9
Figure 5 – Alternative V test circuit (upper left picture), timing diagram (right graphs)
T
and typical transfer characteristics (lower graphs) . 10
Figure 6 – Alternative test method (left pictures) and timing diagram (right graphs) . 10

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
GUIDELINES FOR MEASURING THE THRESHOLD VOLTAGE (V )
T
OF SIC MOSFETS
FOREWORD
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IEC 63505 has been prepared by IEC technical committee 47: Semiconductor devices. It is an
International Standard.
This standard is based upon JEP183 [1] with permission of the copyright holder, JEDEC Solid
State Technology Association, and was submitted as a Fast-Track document.
___________
Numbers in square brackets refer to the Bibliography.

– 4 – IEC 63505:2025 © IEC 2025
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2885/FDIS 47/2908/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
th
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