IEC 62373-1:2020

IEC 62373-1 ®
Edition 1.0 2020-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Bias-temperature stability test for metal-oxide,
semiconductor, field-effect transistors (MOSFET) –
Part 1: Fast BTI test for MOSFET

Dispositifs à semiconducteurs – Essai de stabilité de température en
polarisation pour transistors à effet de champ metal-oxyde-semiconducteur
(MOSFET) –
Partie 1: Essai rapide de BTI pour les MOSFET

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IEC 62373-1 ®
Edition 1.0 2020-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Bias-temperature stability test for metal-oxide,

semiconductor, field-effect transistors (MOSFET) –

Part 1: Fast BTI test for MOSFET

Dispositifs à semiconducteurs – Essai de stabilité de température en

polarisation pour transistors à effet de champ metal-oxyde-semiconducteur

(MOSFET) –
Partie 1: Essai rapide de BTI pour les MOSFET

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.30 ISBN 978-2-8322-8610-4

– 2 – IEC 62373-1:2020 © IEC 2020
CONTENTS
FOREWORD . 4
INTRODUCTION . 6
1 Scope . 7
2 Normative reference . 7
3 Terms and definitions . 7
4 Test equipment . 9
4.1 Equipment . 9
4.1.1 Wafer prober . 9
4.1.2 Measurement equipment . 9
4.2 Recommendation for handling . 10
5 Test sample . 10
5.1 Sample . 10
5.1.1 General . 10
5.1.2 Channel length (gate length) . 10
5.1.3 Channel width (gate width) . 10
5.1.4 Structure . 10
5.1.5 Wafer process . 11
5.2 Antenna protection diode . 11
5.3 Number of samples . 11
6 Procedure . 12
6.1 General remarks on measurement time . 12
6.2 Definition of measurement parameter. 12
6.2.1 Expression of degradation parameters . 12
6.2.2 Measurement in weakly inverted region . 13
6.2.3 Measurement in subthreshold region . 13
6.2.4 Measurement of I degradation (I , I ) . 14
D Dsat Dlin
6.3 Test . 14
6.3.1 Test flow . 14
6.3.2 Fast voltage switching . 15
6.3.3 Temperature . 16
6.3.4 Electric field strength E . 16
ox
6.3.5 Read point . 16
6.3.6 Final test time . 16
6.4 Lifetime estimation . 17
6.4.1 Procedure for estimating the degradation at end of life . 17
6.4.2 Procedure for estimating the lifetime on the targeted criteria . 18
Annex A (informative) Recovery effect of BTI . 19
Annex B (informative) Selection of a wide device [2] . 20
Bibliography . 22

Figure 1 – Degradation (∆V ) recovering by BTI conditions removing with time . 6
th
Figure 2 – I – V curve to explain V . 8
D GS th-ext
Figure 3 – Connection between MOSFET electrodes and external terminals . 10
Figure 4 – Example of antenna protection circuit for BULK process . 11
Figure 5 – Measurement time dependence of recovery effect . 12

Figure 6 – Calculation method of V degradation . 14
th
Figure 7 – Comparison of BTI flowchart . 15
Figure 8 – Switching schematic of fast BTI . 16
Figure A.1 – Recovery time dependence of Pch BTI . 19
Figure B.1 – Typical BTI induced variance dependence on W . 21
Figure B.2 – Possible MOSFET layout to be adopted with narrow device . 21

– 4 – IEC 62373-1:2020 © IEC 2020
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
BIAS-TEMPERATURE STABILITY TEST FOR METAL-OXIDE,
SEMICONDUCTOR, FIELD-EFFECT TRANSISTORS (MOSFET) –

Part 1: Fast BTI test for MOSFET

FOREWORD
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