IEC 62417:2010

IEC 62417 ®
Edition 1.0 2010-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field
effect transistors (MOSFETs)
Dispositifs à semiconducteurs – Essais d’ions mobiles pour transistors à
semiconducteur à oxyde métallique à effet de champ (MOSFETs)

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IEC 62417 ®
Edition 1.0 2010-04
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mobile ion tests for metal-oxide semiconductor field
effect transistors (MOSFETs)
Dispositifs à semiconducteurs – Essais d’ions mobiles pour transistors à
semiconducteur à oxyde métallique à effet de champ (MOSFETs)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
H
CODE PRIX
ICS 31.080 ISBN 978-2-88910-696-7
– 2 – 62417 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope.5
2 Abbreviations and letter symbols .5
3 General description .5
4 Test equipment.6
5 Test structures .6
6 Sample size.6
7 Conditions .6
8 Procedure .7
8.1 Bias temperature stress.7
8.2 Voltage sweep.7
9 Criteria .7
10 Reporting .8

62417 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MOBILE ION TESTS FOR METAL-OXIDE
SEMICONDUCTOR FIELD EFFECT
TRANSISTORS (MOSFETs)
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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International Standard IEC 62417 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/2042/FDIS 47/2049/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – 62417 © IEC:2010
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
62417 © IEC:2010 – 5 –
SEMICONDUCTOR DEVICES –
MOBILE ION TESTS FOR METAL-OXIDE
SEMICONDUCTOR FIELD EFFECT
TRANSISTORS (MOSFETs)
1 Scope
This present standard provides a wafer level test procedure to determine the amount of
positive mobile charge in oxide layers in metal-oxide semiconductor field effect transistors. . It
is applicable to both active and parasitic field effect transistors. The mobile charge can cause
degradation of microelectronic devices, e.g. by shifting the threshold voltage of MOSFETs or
by inversion of the base in bipolar transistors.
2 Abbreviations and letter symbols
This standard uses the following abbreviations and letter symbols:
CV test capacitance-voltage measurement
HFCV test high frequency capacitance-voltage measurement
V gate voltage
g
t oxide thickness
ox
I drain-source current
ds
V positive power supply voltage
dd
V maximum supply voltage
dd,max
V transistor threshold voltage
t
V the absolute value of the threshold voltage before the test
t,initial
V the absolute value of the supply voltage
supply
ε dielectric constant of the oxide
ox
3 General description
The stress applied is on test structures at an elevated temperature where mobile ions can
overcome the energy barriers at the interfaces and the ion mobility in the oxide is sufficiently
high. Two test methods are described in this document.
• Bias temperature stress (BTS)
• Voltage sweep (VS).
The bias temperature stress test is done on transistors. The threshold voltage is determined
from an I - V measurement at room temperature on fresh structures. The threshold voltage
ds gs
is defined as the gate voltage needed to force a fixed drain current through the transistor.
Then, a positive gate stress is applied at a high temperature, to sweep the mobile ions
towards the substrate. After the stress the test structure is cooled to room temperature with
the bias still applied. A second I - V curve is measured at room temperature. The
ds gs
sequence is completed with a negative gate stress at high temperature followed by an I -
ds
V measurement at room temperature. Mobile charge causes a shift in the I - V curve.
gs ds gs
The distance over which the curve is shifted is a measure of the amount of mobile charge in
the insulator.
– 6 – 62417 © IEC:2010
Edge effects of the transistor structure can be taken into account by applying a negative gate
bias for 2 minutes duration at the elevated temperature prior to the BTS measurement.
NOTE Mobile charge in dielectric layers above a large area polysilicon or metal-plate cannot be detected,
because there is no electric field which drives the ions towards the underlying oxide. To overcome this problem
special edge sensitive test structures can be used, that have a large edge/area value, e.g. structures with fingers.
The voltage sweep measurements are done on capacitors. A quasi-static C-V curve is
measured and compared with a low-frequency C-V curve. The ionic displacement current,
which appears as a peak in the quasi-static C-V curve, is indicative of the mobile ion
concentration.
4 Test equipment
The hot chuck shall be capable of maintaining a temperature of
...