IEC 60747-16-7:2022

IEC 60747-16-7 ®
Edition 1.0 2022-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-7: Microwave integrated circuits – Attenuators

Dispositifs à semiconducteurs –
Partie 16-7: Circuits intégrés hyperfréquences – Atténuateurs

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IEC 60747-16-7 ®
Edition 1.0 2022-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-7: Microwave integrated circuits – Attenuators

Dispositifs à semiconducteurs –

Partie 16-7: Circuits intégrés hyperfréquences – Atténuateurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-6116-3

– 2 – IEC 60747-16-7:2022  IEC 2022
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Essential ratings and characteristics . 10
4.1 General requirements . 10
4.1.1 Circuit identification and types . 10
4.1.2 General function description . 11
4.1.3 Manufacturing technology . 11
4.1.4 Package identification . 11
4.2 Application description . 11
4.2.1 Conformance to system and/or interface information . 11
4.2.2 Overall block diagram . 11
4.2.3 Reference data . 11
4.2.4 Electrical compatibility . 11
4.2.5 Associated devices . 12
4.3 Specification of the function . 12
4.3.1 Detailed block diagram – Functional blocks . 12
4.3.2 Identification and function of terminals . 12
4.3.3 Function description . 13
4.4 Limiting values (absolute maximum rating system) . 13
4.4.1 Requirements . 13
4.4.2 Electrical limiting values . 13
4.4.3 Temperatures . 14
4.5 Operating conditions (within the specified operating temperature range) . 15
4.6 Electrical characteristics . 15
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 16
5 Measuring methods . 16
5.1 General . 16
5.1.1 General precautions . 16
5.1.2 Characteristic impedance . 16
5.1.3 Handling precautions . 16
5.1.4 Types . 16
5.2 Transmission loss (L ) and insertion loss (L ) . 17
trans ins
5.2.1 Purpose . 17
5.2.2 Measuring methods . 17
5.3 Attenuation value (A ). 20
att
5.3.1 Purpose . 20
5.3.2 Measuring methods . 20
5.4 Attenuation range (A ) . 22
ran
5.4.1 Purpose . 22
5.4.2 Measuring methods . 22
5.5 Attenuation accuracy (A ), Attenuation accuracy (RMS) (A ) . 24
aur aur(RMS)
5.5.1 Purpose . 24
5.5.2 Measuring methods . 24

5.6 Input return loss (L ) . 26
ret(in)
5.6.1 Purpose . 26
5.6.2 Measuring methods . 26
5.7 Output return loss (L ) . 29
ret(out)
5.7.1 Purpose . 29
5.7.2 Measuring methods . 29
5.8 Input power at n dB compression (P ). 31
i(ndB)
5.8.1 Purpose . 31
5.8.2 Circuit diagram . 31
5.8.3 Principle of measurement . 31
5.8.4 Circuit description and requirements . 31
5.8.5 Precautions to be observed . 31
5.8.6 Measurement procedure . 31
5.8.7 Specified conditions . 31
5.9 Intermodulation distortion (two-tone)(P /P ) . 32
n 1
5.9.1 Purpose . 32
5.9.2 Circuit diagram . 32
5.9.3 Principle of measurement . 32
5.9.4 Circuit description and requirements . 33
5.9.5 Precautions to be observed . 33
5.9.6 Measurement procedure . 33
5.9.7 Specified conditions . 33
5.10 Power at the intercept point (for intermodulation products) (P ) . 34
n(IP)
5.10.1 Purpose . 34
5.10.2 Circuit diagram . 34
5.10.3 Principle of measurement . 34
5.10.4 Circuit description and requirements . 34
5.10.5 Precautions to be observed . 34
5.10.6 Measurement procedure . 34
5.10.7 Specified conditions . 34
5.11 Relative phase shift (θ ) . 35
rel
5.11.1 Purpose . 35
5.11.2 Circuit diagram . 35
5.11.3 Principle of measurement . 35
5.11.4 Circuit description and requirements . 35
5.11.5 Precautions to be observed . 35
5.11.6 Measurement procedure . 36
5.11.7 Specified conditions . 36
5.12 Turn on time(t ), turn off time(t ), rise time(t ), fall time(t ) . 36
on off r(out) f(out)
5.12.1 Purpose . 36
5.12.2 Circuit diagram . 36
5.12.3 Principle of measurement . 36
5.12.4 Circuit description and requirements . 38
5.12.5 Precautions to be observed . 38
5.12.6 Measurement procedure . 38
5.12.7 Specified conditions . 38
5.13 Control voltage sensitivity (S ) . 38
vcont
– 4 – IEC 60747-16-7:2022  IEC 2022
5.13.1 Purpose . 38
5.13.2 Measuring methods . 38
Bibliography . 41

Figure 1 – Circuit diagram for the measurement of the transmission loss and insertion
loss (method 1) . 17
Figure 2 – Circuit diagram for the measurement of the scattering parameters . 19
Figure 3 – Circuit diagram for the measurement of the return loss (method 1) . 27
Figure 4 – Circuit diagram for the measurement of intermodulation distortion . 32
Figure 5 – Circuit diagram for the measurement of response times and switching times . 36
Figure 6 – Input and output waveforms . 37

Table 1 – Function of terminals . 12
Table 2 – Electrical limiting values . 14
Table 3 – Electrical limiting values in detail specification . 14
Table 4 – Temperatures . 14
Table 5 – Electrical characteristics . 15

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-7: Microwave integrated circuits –
Attenuators
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
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Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
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6) All users should ensure that they have the latest edition of this publication.
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
rights. IEC shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-7 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/794/FDIS 47E/798/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 6 – IEC 60747-16-7:2022  IEC 2022
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES –
Part 16-7: Microwave integrated circuits –
Attenuators
1 Scope
This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and
measuring methods of microwave integrated circuit attenuators.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD 1:2010
IEC 60747-4, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from electrostatic
phenomena – User guide
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
reference state
thru state
state of minimum attenuation
3.2
attenuation state
state in which the attenuation is greater than that in the reference state

– 8 – IEC 60747-16-7:2022  IEC 2022
3.3
transmission loss
L
trans
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the transmission loss is expressed in decibels.
3.4
insertion loss
L
ins
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P ) in the reference state
o i
Note 1 to entry: In this region, ∆ P (dBm) =∆ P (dBm).
o i
Note 2 to entry: Usually the insertion loss is expressed in decibels.
[SOURCE: IEC 60747-16-4:2004/AMD 1:2009, 3.1, modified – “at the switched on port” has
been deleted and “in the reference state” has been added.]
3.5
attenuation value
A
att
difference between the insertion loss and the transmission loss in the attenuation state
3.6
attenuation range
A
ran
difference between the maximum and minimum attenuation value
3.7
attenuation accuracy
A
aur
maximum difference between the measured and the nominal attenuation values
3.8
attenuation accuracy (RMS)
A
aur (RMS)
root-mean-square value of the attenuation accuracy
3.9
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.10
output return loss
L
ret(out)
ratio of the incident power at the output port to the reflected power at the output port
[SOURCE: IEC 60747-16-6:2019, 3.5]

3.11
input power at n dB compression
P
i(ndB)
input power where the transmission loss increases by n dB compared with transmission loss in
linear region
Note 1 to entry: Usually n is 0,25 for voltage variable attenuators and 0,1 for digital step attenuators.
3.12
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the output
power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
[SOURCE: IEC 60747-4:2007/AMD1:2017, 7.2.19]
3.13
power at the intercept point (for intermodulation products)
P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
th
component and the n order intermodulation components, when the extrapolation is carried out
in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels)
[SOURCE: IEC 60747-16-1:2001, 3.8]
3.14
relative phase shift
θ
rel
phase shift in the attenuation state relative to that in the reference state
3.15
switching time
3.15.1
turn on time
t
on
interval between the reference point on the leading edge of the control voltage and the reference
point on the trailing edge of the envelope of the output voltage in the linear region of the power
transfer curve P (dBm) = f(P ) when the state of attenuator changes from the reference state to
o i
the attenuation state
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference point is 50 % of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.6, modified – Note 2 has been added, “the lower reference
point“ has been replaced by “the reference point”, “the upper reference point on the leading
edge” has been replaced by “the reference point on the trailing edge” and “when the state of
attenuator changes from the reference state to the attenuation state” has been added]

– 10 – IEC 60747-16-7:2022  IEC 2022
3.15.2
turn off time
t
off
interval between the reference point on the trailing edge of the control voltage and the reference
point on the leading edge of the envelope of the output voltage in the linear region of the power
transfer curve P (dBm) = f(P ) when the state of attenuator changes from the attenuation state
o i
to the reference state
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference is 50% of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.7, modified – Note 2 has been added, “the upper reference
point“ has been replaced by “the reference point”, “the lower reference point on the trailing
edge” has been replaced by “the reference point on the leading edge” and “when the state of
attenuator changes from the attenuation state to the reference state” has been added]
3.16
response time
3.16.1
rise time
t
r(out)
interval between the lower reference point on the leading edge of the output voltage and the
upper reference point on the leading edge of the envelope of the output voltage in the linear
region of the power transfer curve P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
[SOURCE: IEC 60747-16-4:2004, 3.8]
3.16.2
fall time
t
f(out)
interval between the upper reference point on the trailing edge of the output voltage and the
lower reference point on the trailing edge of the envelope of the output voltage in the linear
region of the power transfer curve P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
[SOURCE: IEC 60747-16-4:2004, 3.9]
3.17
control voltage sensitivity
S
vcont
ratio of the change of attenuation value to the variation of the control voltage
4 Essential ratings and characteristics
4.1 General requirements
4.1.1 Circuit identification and types
The identification of type (device name), the category of circuit and technology applied shall be
given.
Microwave attenuators comprise two categories:
– Type A: voltage variable attenuators;
– Type B: digital step attenuators.
4.1.2 General function description
A general description of the function performed by the microwave integrated circuit attenuators
and the features for the application shall be made.
4.1.3 Manufacturing technology
The manufacturing technology, e.g. semiconductor monolithic integrated circuit, thin film
integrated circuit, micro-assembly, etc. shall be stated. This statement shall include details of
the semiconductor technologies such as Schottky-barrier diode, metal-semiconductor field
effect transistor (MESFET), Si bipolar transistor, etc.
IEC 60747-4 shall be referred to for terminology and letter symbols, essential ratings and
characteristics and measuring methods of such microwave devices.
4.1.4 Package identification
The following statements shall be made:
a) chip or packaged form;
b) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
c) principal package material, for example, metal, ceramic, plastic.
4.2 Application description
4.2.1 Conformance to system and/or interface information
It should be stated whether the integrated circuit conforms to an application system and/or an
interface standard or a recommendation.
Detailed information concerning application systems, equipment and circuits such as very small
aperture terminal (VSAT) systems, broadcasting satellite (BS) receivers, microwave landing
systems, etc. should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems should be given if necessary.
4.2.3 Reference data
The most important properties that permit comparison between derivative types should be given.
4.2.4 Electrical compatibility
It should be stated whether the integrated circuit is electrically compatible with other particular
integrated circuits, or families of integrated circuits, or whether special interfaces are required.
Details should be given concerning the type of input and output circuits, e.g. input/output
impedances, DC block, open-drain, etc. Interchangeability with other devices, if any, should
also be given.
– 12 – IEC 60747-16-7:2022  IEC 2022
4.2.5 Associated devices
If applicable, the following should be stated:
– devices necessary for correct operation (list with type number, name and function);
– peripheral devices with direct interfacing (list with type number, name and function).
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave
attenuators shall be given. The block diagram shall be composed of the following:
a) functional blocks;
b) mutual interconnections among the functional blocks;
c) individual functional units within the functional blocks;
d) mutual interconnections among the individual functional blocks;
e) function of each external connection;
f) inter-dependence between the separate functional blocks.
The block diagram shall identify the function of each external connection and, where no
ambiguity can arise, also show the terminal symbols and/or numbers. If the encapsulation has
metallic parts, any connection to them from external terminals shall be indicated. The
connections with any associated external electrical elements shall be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. Rules governing such diagrams can be obtained from IEC 60617.
4.3.2 Identification and function of terminals
All terminals shall be identified on the block diagram (supply terminals, input or output terminals,
input/output terminals). The terminal functions shall be indicated in Table 1.
Table 1 – Function of terminals
b
Terminal Terminal Terminal Function of terminal
Function
a
number symbol
designation
input/output Type of input/output
c d
identification circuits
a
A terminal designation to indicate the function of the terminal shall be given. Supply terminals, ground terminals,
blank terminals (with abbreviation NC), non-usable terminals (with abbreviation NU) shall be distinguished.
b
A brief indication of the terminal function shall be given:
– each function of multi-role terminals, i.e. terminals having multiple functions;
– each function of integrated circuit selected by mutual pin connections, programming and/or application of
function selection data to the function selection pin, such as mode selection pin.
c
Input, output, input/output and multiplex output terminals shall be distinguished.
d
The type of input and output circuit, e.g. input/output impedances, with or without DC block, etc., shall be
distinguished.
If the baseplate of the package is used as a ground terminal, the type of ground, e.g. analog
ground, digital ground, shall be stated in the column of Function in Table 1.

EXAMPLE
Bias voltage(s) Control voltage(s)
Microwave
Input(s) NC
integrated
circuit
NU Output(s)
attenuator
Ground
4.3.3 Function description
The function performed by the circuit shall be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (e.g., set-up method, preference, etc.);
– interruption handling.
4.4 Limiting values (absolute maximum rating system)
4.4.1 Requirements
These limiting values shall contain the following:
– any interdependence of limiting conditions shall be specified;
– if externally connected and/or attached elements, for example heatsinks, have an influence
on the values of the ratings, the ratings shall be prescribed for the integrated circuit with the
elements connected and/or attached;
– if limiting values are exceeded for transient overload, the permissible excess and their
durations shall be specified;
– where minimum and maximum values differ during programming of the device, this shall be
stated;
, ground, etc.);
– all voltages are referenced to a specified reference terminal (U
SS
– if maximum and/or minimum values are quoted, the manufacturer shall indicate whether he
refers to the absolute magnitude or to the algebraic value of the quantity;
– the ratings given shall cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-dependent,
this dependence shall be indicated.
4.4.2 Electrical limiting values
Electrical limiting values shall be specified as shown in Table 2.

– 14 – IEC 60747-16-7:2022  IEC 2022
Table 2 – Electrical limiting values
Parameters Min. Max.
Bias voltage(s) (where appropriate) + +
Bias current(s) (where appropriate) +
Control supply voltage(s) (where appropriate) + +
Control supply current(s) (where appropriate) +
Terminal voltage(s) (where appropriate) + +
Terminal current(s) (where appropriate) +
Input power +
Power dissipation +
It is necessary to select either bias voltage(s) or bias current(s), either terminal voltage(s) or terminal
current(s).
The detail specification may indicate those values within Table 3.
Table 3 – Electrical limiting values in detail specification
a, b
Symbols Min. Max. Unit
Parameters
a
Where appropriate, in accordance with the type of circuit considered.
b
For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with respect to a special
electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement shall be made as to whether the
sequence in which these supplies are applied is significant: if so, the sequence shall be stated;
– when more than one supply is needed, the combinations of ratings for these supply voltages and
currents shall be stated.
4.4.3 Temperatures
The detail specification can indicate the following temperature values within Table 4:
a) operating temperature (ambient or reference-point temperature);
b) storage temperature;
c) channel temperature;
d) lead temperature (for soldering).
Table 4 – Temperatures
a
Symbols Min. Max. Unit
Parameters
a
Where appropriate, in accordance with the type of circuit considered.

4.5 Operating conditions (within the specified operating temperature range)
Operating conditions are not to be inspected, but may be used for quality assessment purpose.
a) power supplies – positive and/or negative values (where appropriate);
b) initialization sequences (where appropriate), if special initialization sequences are
necessary, power supply sequencing and initialization procedure shall be specified;
c) input voltage(s) (where appropriate);
d) output current(s) (where appropriate);
e) voltage and/or current of other terminal(s);
f) external elements (where appropriate);
g) operating temperature range.
4.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified. Each characteristic shall be stated either:
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
The parameters should be specified corresponding to the type as shown in Table 5.
Table 5 – Electrical characteristics
Parameters Min. Typ. Max. Types
A B
Bias supply operating current(where appropriate)
+ + + +
Control supply operating current(where appropriate)
+ + + +
Insertion loss(L )
+ + + +
ins
Attenuation value (A )
+ + + + +
att
Attenuation range (A )
+ + + + +
ran
Attenuation accuracy (A )
+ + + +
aur
Attenuation accuracy RMS (A )
+ + + +
aur(RMS)
Input return loss (L )
+ + + +
ret(in)
Output return loss (L )
+ + + +
ret(out)
Input power at n dB compression (P ) + + + +
i(ndB)
Intermodulation distortion (P /P ) + + + +
n 1
Power at the intercept point (P )
+ + + +
n(IP)
Relative phase shift (θ )
+ + + +
rel
Turn on time (t )
+ + + +
on
Turn off time (t )
+ + + +
off
Rise time (t )
+ + + +
r(out)
Fall time (t )
+ + + +
f(out)
Control voltage sensitivity (S )
+ + + +
vcont
4.7 Mechanical and environmental ratings, characteristics and data
Any applicable mechanical and environmental ratings, characteristics and data specified in 5.10
and 5.11 of IEC 60747-1:2006 shall be stated.

– 16 – IEC 60747-16-7:2022  IEC 2022
4.8 Additional information
Where appropriate, the following information shall be given:
a) equivalent input and output circuit: Detail information shall be given regarding the type of
input and output circuits, e.g. input/output impedances, DC block, open-drain, etc;
b) internal protection: A statement shall be given to indicate whether the integrated circuit
contains internal protection against high static voltages or electrical fields;
c) capacitors at terminals: If capacitors for the input/output DC block are needed, these
capacitances shall be stated;
d) thermal resistance;
e) interconnections to other types of circuit: Where appropriate, details of the interconnections
to other circuits shall be given, for example, detector circuit for automatic gain control
(AGC), sense amplifiers, buffer, etc;
f) effects of externally connected component(s): Curves or data indicating the effect of
externally connected component(s) that influence the characteristics may be given;
g) recommendations for any associated device(s): For example, decoupling of power supply to
a high-frequency device shall be stated;
h) handling precautions: Where appropriate, handling precautions specific to the circuit shall
be stated (see also IEC 61340-5-1 and IEC TR 61340-5-2);
i) application data;
j) other application information;
k) date of issue of the data sheet.
5 Measuring methods
5.1 General
5.1.1 General precautions
The general precautions listed in 6.3, 6.4 and 6.6 of IEC 60747-1:2006 shall be applied. In
addition, special care shall be taken to use low-ripple DC power supplies and to decouple
adequately all supply terminals at the frequency of measurement. Although the level of the
signal can be specified in either power or voltage, in this document it is expressed in power
unless otherwise specified. Correct calibration shall be performed to the measurement fixture,
and calibration method should be described.
5.1.2 Characteristic impedance
The characteristic impedance of the measurement system, shown in the circuit in this document,
is 50 Ω. If it is not 50 Ω, it shall be specified.
5.1.3 Handling precautions
When handling electrostatic-sensitive devices, the handling precautions given in IEC 61340-5-1
and IEC TR 61340-5-2 shall be observed.
5.1.4 Types
The devices in this document are both packaged and chip types, measured using suitable test
fixtures.
5.2 Transmission loss (L ) and insertion loss (L )
trans ins
5.2.1 Purpose
To measure the transmission loss and insertion loss under specified condit
...