31.080.10 - Diodes
ICS 31.080.10 Details
Diodes
Dioden
Diodes
Diode
General Information
Frequently Asked Questions
ICS 31.080.10 is a classification code in the International Classification for Standards (ICS) system. It covers "Diodes". The ICS is a hierarchical classification system used to organize international, regional, and national standards, facilitating the search and identification of standards across different fields.
There are 29 standards classified under ICS 31.080.10 (Diodes). These standards are published by international and regional standardization bodies including ISO, IEC, CEN, CENELEC, and ETSI.
The International Classification for Standards (ICS) is a hierarchical classification system maintained by ISO to organize standards and related documents. It uses a three-level structure with field (2 digits), group (3 digits), and sub-group (2 digits) codes. The ICS helps users find standards by subject area and enables statistical analysis of standards development activities.
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IEC 60747-2:2025 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics (properties), measuring and test methods, requirements for type tests, routine tests, endurance tests and marking for the following discrete semiconductor devices:
- generic rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
If no ambiguity is likely to result, any of the above will be referred to as diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) the terms and definitions for partial thermal resistance junction-to-case have been added;
b) Clauses 3, 4, 5, 6 and 7 have been amended with some deletions of information no longer in use and with some necessary additions.
- Standard50 pagesEnglish languagesale 15% off
IEC 61643-341:2020 specifies standard test circuits and methods for thyristor surge suppressor (TSS) components. These surge protective components, SPCs, are specially formulated thyristors designed to limit overvoltages and divert surge currents by clamping and switching actions. These SPCs are used in the construction of surge protective devices (SPDs) and equipment used in Information & Communications Technologies (ICT) networks with voltages up to AC 1 000 V and DC 1 500 V. This document is applicable to gated or non-gated TSS components with third quadrant (-v and –i) characteristics of blocking, conducting or switching. This document contains information on
- terminology;
- letter symbols;
- essential ratings and characteristics;
- rating verification and characteristic measurement;
This document does not apply to the conventional three-terminal thyristors as covered by IEC 60747-6. This second edition of IEC 61643-341 cancels and replaces the first edition published in 2001. This edition constitutes a technical revision.This edition includes the following significant technical changes with respect to the previous edition: Addition of performance values.
- Standard79 pagesEnglish languagee-Library read for1 day
IEC 61643-341:2020 specifies standard test circuits and methods for thyristor surge suppressor (TSS) components. These surge protective components, SPCs, are specially formulated thyristors designed to limit overvoltages and divert surge currents by clamping and switching actions. These SPCs are used in the construction of surge protective devices (SPDs) and equipment used in Information & Communications Technologies (ICT) networks with voltages up to AC 1 000 V and DC 1 500 V. This document is applicable to gated or non-gated TSS components with third quadrant (-v and –i) characteristics of blocking, conducting or switching. This document contains information on - terminology; - letter symbols; - essential ratings and characteristics; - rating verification and characteristic measurement; This document does not apply to the conventional three-terminal thyristors as covered by IEC 60747-6. This second edition of IEC 61643-341 cancels and replaces the first edition published in 2001. This edition constitutes a technical revision.This edition includes the following significant technical changes with respect to the previous edition: Addition of performance values.
- Standard79 pagesEnglish languagee-Library read for1 day
IEC 61643-341:2020 specifies standard test circuits and methods for thyristor surge suppressor (TSS) components. These surge protective components, SPCs, are specially formulated thyristors designed to limit overvoltages and divert surge currents by clamping and switching actions. These SPCs are used in the construction of surge protective devices (SPDs) and equipment used in Information & Communications Technologies (ICT) networks with voltages up to AC 1 000 V and DC 1 500 V. This document is applicable to gated or non-gated TSS components with third quadrant (-v and –i) characteristics of blocking, conducting or switching. This document contains information on
- terminology;
- letter symbols;
- essential ratings and characteristics;
- rating verification and characteristic measurement;
This document does not apply to the conventional three-terminal thyristors as covered by IEC 60747-6. This second edition of IEC 61643-341 cancels and replaces the first edition published in 2001. This edition constitutes a technical revision.This edition includes the following significant technical changes with respect to the previous edition: Addition of performance values.
- Standard158 pagesEnglish and French languagesale 15% off
- Standard9 pagesEnglish and French languagesale 15% off
IEC 60747-2:2016 provides standards for the following categories or sub-categories of rectifier diodes, including:
- line rectifier diodes;
- avalanche rectifier diodes;
- fast-switching rectifier diodes;
- Schottky barrier diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) Schottky barrier diodes and its properties are added;
b) Clauses 3, 4, 5 and 7 were amended with some deletions of information no longer in use or already included in other parts of the IEC 60747 series, and with some necessary additions;
c) Clause 6 was moved and added to Clause 7 of this third edition;
d) some parts of Clause 7 were moved and added to Clause 7 of this third edition;
e) Annex A was deleted.
This publication is to be read in conjunction with IEC 60747-1:2006.
- Standard91 pagesEnglish and French languagesale 15% off
IEC 60747-3:2013 gives the requirements for the following devices:
- signal diodes (excluding diodes designed to operate at frequencies above several hundred MHz);
- switching diodes (excluding high power rectifier diodes);
- voltage-regulator diodes; voltage-reference diodes;
- current-regulator diodes.
This edition includes the following significant technical changes with respect to the previous edition:
a) All clauses were re-edited to latest IEC publication format and style with all contents from previous publication.
b) All clauses have been amended by suitable additions and deletions.
This publication should be read in conjunction with IEC 60747-1:2006.
- Standard69 pagesEnglish and French languagesale 15% off
- Technical report10 pagesEnglish and French languagesale 15% off
Provides requirements for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes,bipolar transistors and field-effect transistors. This second edition cancels and replaces the first edition, published in 1991, its amendments 1, 2 and 3 (1993, 1999 and 2001, respectively), and constitutes a technical revision.
- Standard548 pagesEnglish and French languagesale 15% off
- Standard276 pagesEnglish and French languagesale 15% off
Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs.
- Standard19 pagesEnglish languagee-Library read for1 day
Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs.
- Standard19 pagesEnglish languagee-Library read for1 day
Is applicable to avalanche breakdown diodes (ABDs) which represent one type of surge protective device component (hereinafter referred to as SPDC) used in the design and construction of surge protective devices connected to low-voltage power distribution systems, transmission, and signalling networks. Test specifications in this standard are for single ABDs consisting of two terminals. However, multiple ABDs may be assembled within a single package defined as a diode array. Each diode within the array can be tested to this specification. This standard contains a series of test criteria for determining the electrical characteristics of the ABD. From the standard test methods described herein, the performance characteristics and ratings of the ABD can be verified or established for specific packaged designs.
- Standard31 pagesEnglish and French languagesale 15% off
Is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on -terms, letter symbols, and definitions -basic functions, configurations and component structure -service conditions and fault modes -rating verification and characteristic measurement.
- Standard123 pagesEnglish and French languagesale 15% off
Gives standards for the following categories of discrete devices: variable capacitance diodes and snap-off diodes, mixer diodes and detector diodes, avalanche diodes, gunn diodes, bipolar transistor and field-effet transistors.
- Standard219 pagesEnglish and French languagesale 15% off
Gives standards for rectifier diodes such as avalanche, controlled avalanche or fast-switching rectifier diodes.
- Standard129 pagesEnglish and French languagesale 15% off
Is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on -terms, letter symbols, and definitions -basic functions, configurations and component structure -service conditions and fault modes -rating verification and characteristic measurement.
- Standard66 pagesEnglish languagee-Library read for1 day
D114/033: Withdrawn
- Standard14 pagesEnglish languagee-Library read for1 day
D114/033: Withdrawn
- Standard9 pagesEnglish languagee-Library read for1 day
D114/033: Withdrawn
- Standard13 pagesEnglish languagee-Library read for1 day
D114/033: Withdrawn
- Standard8 pagesEnglish languagee-Library read for1 day
D114/033: Withdrawn
- Standard11 pagesEnglish languagee-Library read for1 day
IEC/PAS 62612:2009(E) specifies the performance requirements for self-ballasted LED lamps with a supply voltage up to 250 V, together with the test methods and conditions required, intended for domestic and similar general lighting purposes, having:
- a rated wattage up to 60 W;
- a rated voltage of up to 250 V AC or DC.
- Technical specification15 pagesEnglish languagesale 15% off
SCOPE
1.1 This test method covers the measurement of leakage currents of transistors and diodes. Electronic devices exposed to ionizing radiation may show increases in leakage current as the accumlated total dose rises.
1.2 These procedures are intended for the measurement of currents in the range from 10 -11 to 10 -3 A.
1.3 This test method may be used with either a virtual-ground current meter or a resistance-shunt current meter.
1.4 The values stated in International System of Units (SI) are to be regarded as standard. No other units of measurement are included in this test method.
1.5 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
WITHDRAWN RATIONALE
This test method covers the measurement of leakage currents of transistors and diodes. Electronic devices exposed to ionizing radiation may show increases in leakage current as the accumulated total dose rises.
Formerly under the jurisdiction of Committee F01 on Electronics, this test method was withdrawn in June 2006 in accordance with section 10.6.3.1 of the Regulations Governing ASTM Technical Committees, which requires that standards shall be updated by the end of the eighth year since the last approval date.
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- Standard12 pagesEnglish languagesale 15% off
- Standard29 pagesEnglish and French languagesale 15% off
Is a test specification standard for thyristor surge suppressor (TSS) components designed to limit overvoltages and divert surge currents by clipping and crowbarring actions. Such components are used in the construction of surge protective devices, particularly as they apply to telecommunications. This standard contains information on -terms, letter symbols, and definitions -basic functions, configurations and component structure -service conditions and fault modes -rating verification and characteristic measurement.
- Standard66 pagesEnglish languagee-Library read for1 day
D114/033: Withdrawn
- Standard13 pagesEnglish languagee-Library read for1 day
SCOPE
1.1 This test method covers the measurement of carrier density in silicon epitaxial layers. The precision that can be expected depends upon the carrier-density inhomogeneities parallel and perpendicular to the junction and upon the carrier-density level.
1.2 The measurement requires the formation of Schottky or p-n junction diodes on or in the epitaxial layer. In this sense the method is destructive (see, however, 5.2).
1.3 Both n- and -type epitaxial layers can be evaluated, on substrates of the same or opposite types, if the layer thickness is greater than twice the zero-bias depletion width plus, for diffused diodes only, the junction depth (1). This test method is also applicable to bulk material.
1.4 This test method covers the carrier density range from about 4 X 10 13 to about 8 X 10 16 carriers/cm (resistivity range from about 0.1 to about 100 [omega][dot]cm in -type wafers and from about 0.24 to about 330 [omega][dot]cm in -type wafers).
1.5 This test method includes procedures for checking both capacitance- and voltage-measuring equipment.
1.6 This test method provides two means of calculating the carrier density from capacitance-voltage data: an incremental method (12.3.1) and a curve-fitting method (12.3.2). Note 1-An alternative method for determining carrier density in epitaxial layers is given in Test Method F1392. This and a related method, DIN 50439, use a mercury-probe Schottky barrier contact rather than a fabricated p-n junction or Schottky diode. Therefore, measurements by Test Method F1392 and DIN 50439 may not be entirely comparable to those made by this test method. DIN 50439 is also applicable to gallium arsenide as well as to silicon.
1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in 11.8 and 11.14.
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