SIST EN IEC 61643-341:2020

SLOVENSKI STANDARD
SIST EN IEC 61643-341:2020
01-oktober-2020
Nadomešča:
SIST EN 61643-341:2005
Sestavni deli za nizkonapetostne naprave za zaščito pred prenapetostnimi udari -
341. del: Specifikacije za tiristorske prenapetostne omejevalnike (TSS)
Components for low-voltage surge protection -Part 341: Performance requirements and
test circuits for thyristor surge suppressors (TSS)
Ta slovenski standard je istoveten z: EN IEC 61643-341:2020
ICS:
29.120.50 Varovalke in druga Fuses and other overcurrent
nadtokovna zaščita protection devices
31.080.10 Diode Diodes
SIST EN IEC 61643-341:2020 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

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SIST EN IEC 61643-341:2020

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SIST EN IEC 61643-341:2020


EUROPEAN STANDARD EN IEC 61643-341

NORME EUROPÉENNE

EUROPÄISCHE NORM
July 2020
ICS 31.080.10 Supersedes EN 61643-341:2001 and all of its
amendments and corrigenda (if any)
English Version
Components for low-voltage surge protection - Part 341:
Performance requirements and test circuits for thyristor surge
suppressors (TSS)
(IEC 61643-341:2020)
Composants pour parafoudres basse tension - Partie 341: Bauelemente für Überspannungsschutzgeräte für
Exigences de performance et circuits d'essai pour Niederspannung - Teil 341: Leistungsanforderungen sowie
parafoudres à thyristor (TSS) Prüfschaltungen für Suppressordioden (TSS)
(IEC 61643-341:2020) (IEC 61643-341:2020)
This European Standard was approved by CENELEC on 2020-06-17. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.


European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2020 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
 Ref. No. EN IEC 61643-341:2020 E

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SIST EN IEC 61643-341:2020
EN IEC 61643-341:2020 (E)
European foreword
The text of document 37B/218/FDIS, future edition 2 of IEC 61643-341, prepared by SC 37B
"Components for low-voltage surge protection" of IEC/TC 37 "Surge arresters" was submitted to the
IEC-CENELEC parallel vote and approved by CENELEC as EN IEC 61643-341:2020.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2021-03-17
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2023-06-17
document have to be withdrawn
This document supersedes EN 61643-341:2001 and all of its amendments and corrigenda (if any).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice
The text of the International Standard IEC 61643-341:2020 was approved by CENELEC as a
European Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standards
indicated:
IEC 60060-1:2010 NOTE Harmonized as EN 60060-1:2010 (not modified)
IEC 60068-2-20:2008 NOTE Harmonized as EN 60068-2-20:2008 (not modified)
IEC 60068-2-21:2006 NOTE Harmonized as EN 60068-2-21:2006 (not modified)
IEC 60099-4:2014 NOTE Harmonized as EN 60099-4:2014 (not modified)
IEC 60721-3-3:2019 NOTE Harmonized as EN IEC 60721-3-3:2019 (not modified)
IEC 60721-3-9:1993 NOTE Harmonized as EN 60721-3-9:1993 (not modified)
IEC 60749-1:2002 NOTE Harmonized as EN 60749-1:2003 (not modified)
IEC 60950-1:2005 NOTE Harmonized as EN 60950-1:2006 (modified)
IEC 61000-4-5:2014 NOTE Harmonized as EN 61000-4-5:2014 (not modified)
IEC 61643-11:2011 NOTE Harmonized as EN 61643-11:2012 (modified)
IEC 62475:2010 NOTE Harmonized as EN 62475:2010 (not modified)

2

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SIST EN IEC 61643-341:2020
EN IEC 61643-341:2020 (E)
Annex ZA
(normative)

Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1  Where an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
NOTE 2  Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 60050-521 - International Electrotechnical Vocabulary - - -
Part 521: Semiconductor devices and
integrated circuits
IEC 60068-2-20 2008 Environmental testing - Part 2-20: Tests - EN 60068-2-20 2008
Test T: Test methods for solderability and
resistance to soldering heat of devices with
leads



3

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SIST EN IEC 61643-341:2020

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SIST EN IEC 61643-341:2020



IEC 61643-341

®


Edition 2.0 2020-05




INTERNATIONAL



STANDARD




NORME



INTERNATIONALE











Components for low-voltage surge protection –

Part 341: Performance requirements and test circuits for thyristor surge

suppressors (TSS)




Composants pour parafoudres basse tension –

Partie 341: Exigences de performance et circuits d'essai pour parafoudres


à thyristor (TSS)













INTERNATIONAL

ELECTROTECHNICAL

COMMISSION


COMMISSION

ELECTROTECHNIQUE


INTERNATIONALE




ICS 31.080.10 ISBN 978-2-8322-8304-2




Warning! Make sure that you obtained this publication from an authorized distributor.

Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agréé.

® Registered trademark of the International Electrotechnical Commission
Marque déposée de la Commission Electrotechnique Internationale

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SIST EN IEC 61643-341:2020
– 2 – IEC 61643-341:2020 © IEC 2020
CONTENTS
FOREWORD . 6
1 Scope . 8
2 Normative references . 8
3 Terms, definitions, abbreviated terms and symbols . 8
3.1 Parametric terms, letter symbols and definitions . 9
3.2 General terms . 9
3.3 Main terminal ratings . 9
3.4 Main terminal characteristics . 11
3.5 Additional and derived parameters . 12
3.6 Temperature related parameters . 12
3.7 Gate terminal parameters . 13
3.8 Abbreviated terms . 15
3.9 Circuit symbols . 15
4 TSS types . 16
5 Service conditions . 18
5.1 Normal service conditions . 18
.
5.2 Storage temperature range, T min to T max. . 18
stg stg
6 Mechanical requirements and identification . 18
6.1 Robustness of terminations . 18
6.2 Solderability . 18
6.3 Marking . 18
6.4 Documentation . 18
7 Standard test methods . 19
7.1 Failure rates . 19
7.2 Test conditions . 19
7.2.1 General. 19
7.2.2 Standard atmospheric conditions . 19
7.2.3 Measurement errors . 20
7.2.4 Measurement accuracy . 20
7.2.5 Designated impulse shape and values . 20
7.2.6 Multiple TSS . 20
7.2.7 Gated TSS testing . 20
7.3 Rating test procedures . 20
7.3.1 General. 20
7.3.2 Repetitive peak off-state voltage, V . 21
DRM
7.3.3 Repetitive peak on-state current, I . 21
TRM
7.3.4 Non-repetitive peak on-state current, I . 22
TSM
7.3.5 Non-repetitive peak pulse current, I . 23
PP
7.3.6 Repetitive peak reverse voltage, V . 24
RRM
7.3.7 Non-repetitive surge forward current, I . 24
FSM
7.3.8 Repetitive peak forward current, I . 24
FRM
7.3.9 Critical rate of rise of on-state current, di/dt . 25
7.4 Characteristic test procedures . 26
7.4.1 General. 26
7.4.2 Off-state current, I . 26
D
7.4.3 Repetitive peak off-state current, I . 27
DRM

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7.4.4 Repetitive peak reverse current, I . 27
RRM
7.4.5 Breakover voltage, V and current, I . 27
(BO) (BO)
7.4.6 On-state voltage, V . 29
T
7.4.7 Holding current, I . 33
H
7.4.8 Off-state capacitance, C . 34
o
7.4.9 Forward voltage, V . 37
F
7.4.10 Peak forward recovery voltage, V . 37
FRM
7.4.11 Critical rate of off-state voltage rise, dv/dt . 38
7.4.12 Variation of holding current with temperature . 38
7.4.13 Gate-to-adjacent terminal peak off-state voltage and peak off-state
gate current, V , I . 38
GDM GDM
7.4.14 Gate reverse current, adjacent terminal open, I , I . 39
GAO GKO
7.4.15 Gate reverse current, main terminals short-circuited, I , I . 40
GAS GKS
Annex A (informative) Common impulse waveshapes . 41
A.1 General . 41
A.2 Types of impulse generator . 41
A.3 Impulse generator parameters . 41
A.3.1 Glossary of terms. 41
A.3.2 Virtual parameters . 42
A.4 Impulse generators typically used for surge protector testing . 44
A.4.1 General. 44
A.4.2 Impulse generators with a defined voltage waveform . 44
A.4.3 Impulse generators with a defined current waveform . 44
A.4.4 Generators with defined voltage and current waveforms . 45
Annex B (informative) Glossary of IEC 60747-6 [10] thyristor terms . 48
B.1 General . 48
B.2 Thyristor types . 48
B.3 Basic terms defining the static voltage-current characteristics of triode
thyristors . 49
B.4 Basic terms defining the static voltage-current characteristics of diode
thyristors . 51
B.5 Particulars of the static voltage-current characteristics of triode and diode

thyristors . 52
B.6 Terms related to ratings and characteristics; principal voltages . 54
B.7 Terms related to ratings and characteristics; principal currents . 55
B.8 Terms related to ratings and characteristics; gate voltages and currents . 57
B.9 Terms related to ratings and characteristics; powers, energies and losses . 59
B.10 Letter symbols . 61
B.10.1 General. 61
B.10.2 List of letter symbols . 62
Annex C (informative) Additional parametric tests . 64
C.1 General . 64
C.2 Temperature derating. 64
C.3 Thermal resistance, R . 64
th
C.4 Transient thermal impedance, Z (t) . 65
th
C.5 Gate reverse current, on-state, I , I . 66
GAT GKT
C.6 Gate reverse current, forward conducting state, I , I . 67
GAF GKF
C.7 Gate switching charge, Q . 68
GS
C.8 Peak gate switching current, I . 70
GSM

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C.9 Gate-to-adjacent terminal breakover voltage, V , V . 71
GK(BO) GA(BO)
Annex D (normative) Preferred values . 72
D.1 General . 72
D.2 V and V . 72
(BO) DRM
D.3 C , V and I . 73
O DRM PP
D.4 I . 74
H
D.5 I and time to half value (duration) . 74
PP
Bibliography . 75

Figure 1 – Fixed voltage, two terminals: a) reverse blocking and b) reverse conducting . 15
Figure 2 – Gated reverse blocking: a) P gate b) N gate and c) P & N gate . 16
Figure 3 – Gated reverse conducting: a) P gate and b) N gate . 16
Figure 4 – Bidirectional: a) 2 terminal fixed voltage and b) gated . 16
Figure 5 – Switching quadrant characteristics: a) fixed-voltage TSS and b) gated TSS . 17
Figure 6 – TSS non-switching characteristics: a) reverse blocking b) reverse
conducting . 17
Figure 7 – Test circuit for verifying repetitive peak off-state voltage (V ) . 21
DRM
Figure 8 – Test circuit for verifying repetitive peak on-state current, I . 21
TRM
Figure 9 – Repetitive peak on-state current waveforms . 22
Figure 10 – Test circuit for verifying non-repetitive peak on-state current, I . 23
TSM
Figure 11 – Test circuit for verifying non-repetitive peak pulse current, I . 24
PP
Figure 12 – Test circuit for verifying critical rate of rise of on-state current (di/dt) . 25
Figure 13 – Half sine-wave di/dt test circuit . 26
Figure 14 – Test circuit for off-state current, I at V . 27
D D
Figure 15 – Test circuit for breakover, V and I and on-state voltage, V . 28
(BO) (BO) T
Figure 16 – Voltage and current waveforms versus time for a fixed-voltage TSS
showing switch-on, on-state and switch-off events . 28
Figure 17 – Waveform expansions of Figure 16 . 30
Figure 18 – Voltage and current waveforms versus time for a gated TSS showing
switch-on, on-state and switch-off events . 31
Figure 19 – Waveform expansions of Figure 18 . 32
Figure 20 – Test circuit for holding current, I . 33
H
Figure 21 – Test circuit for holding current with additional DC bias . 34
Figure 22 – Test circuit for capacitance measurement . 34
Figure 23 – Test circuit for capacitance measurement with external DC bias . 35
Figure 24 – Test circuit for capacitance measurement of multi-terminal TSS . 36
Figure 25 – Diode voltage and current waveforms versus time showing V and
FRM
rising current di/dt . 37
Figure 26 – Test circuit for exponential critical rate of off-state voltage rise, dv/dt . 38
Figure 27 – Test circuit for gate-to-adjacent terminal peak off-state voltage and
current, V and I . 39
GDM GDM
Figure 28 – Test circuit for gate reverse current, adjacent terminal open, I , I . 39
GAO GKO
Figure 29 – Test circuit for gate reverse current, main terminals short-circuited, I ,
GAS
I . 40
GKS
Figure A.1 – Current or voltage impulse amplitude versus time showing a 10 % to
90 % T front time and T time to half value . 43
1 2

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Figure A.2 – Voltage impulse amplitude versus time showing a 30 % to 90 % T front
1
time and T time to half value . 43
2
Figure B.1 – Particulars of the static characteristic of unidirectional thyristors. 52
Figure B.2 – Particulars of the static characteristic of bidirectional thyristors . 53
Figure B.3 – a) Approximation of the on-state V -I characteristic b) Approximation of
T T
the reverse V -I characteristic . 60
R R
Figure C.1 – Test circuit for thermal resistance and impedance . 65
Figure C.2 – Thermal impedance versus time . 66
Figure C.3 – Test circuit for gate reverse current, on-state, I , I . 67
GAT GKT
Figure C.4 – Test circuit for gate reverse current, forward conducting state, I ,
GAF
I . 68
GKF
Figure C.5 – Test circuit for gate switching current, gate switching charge and gate-to-
adjacent terminal breakover voltage, I , Q , V , V . 69
GSM GS GK(BO) GA(BO)
Figure C.6 – Test circuit of an integrated gate diode TSS for gate switching current,
gate switching charge and gate-to-adjacent terminal breakover voltage I , Q ,
GSM GS
V , V . 70
GK(BO) GA(BO)
Figure C.7 – Overall and expanded clamping waveforms for a P-type gate TSS
showing V and Q measurement (di /dt = 10 A/µs, V = –72 V) . 71
GK(BO) GS K GG
Figure D.1 – V /V ratio against V . 72
(BO) DRM DRM
Figure D.2 – V vs V . 73
(BO) DRM
Figure D.3 – Capacitance variation with DC bias . 73
Figure D.4 – I versus Duration for various 10/1 000 current ratings . 74
PP

Table 1 – Types of TSS . 17
Table 2 – Breakover ramp rate test values . 29
Table A.1 – Voltage impulse generators . 44
Table A.2 – Current impulse generators . 45
Table A.3 – Voltage and current impulse generators . 46
Table A.4 – Other voltage and current impulse generators . 47
Table B.1 – Additional general subscripts . 61
Table B.2 – Principal voltages, anode-cathode voltages. 62
Table B.3 – Principal currents, anode currents, cathode currents . 62
Table B.4 – Gate voltages . 63
Table B.5 – Gate currents . 63
Table B.6 – Sundry quantities . 63
Table B.7 – Power loss . 63

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INTERNATIONAL ELECTROTECHNICAL COMMISSION
___________

COMPONENTS FOR LOW-VOLTAGE SURGE PROTECTION –

Part 341: Performance requirements and test circuits
for thyristor surge suppressors (TSS)

FOREWORD
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