Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

Amendement 1 - Dispositifs à semiconducteurs - Dispositifs discrets - Partie 4: Diodes et transistors hyperfréquences

General Information

Status
Published
Publication Date
29-Jan-2017
Drafting Committee
WG 2 - TC 47/SC 47E/WG 2
Current Stage
PPUB - Publication issued
Start Date
30-Jan-2017
Completion Date
27-Feb-2017

Relations

Effective Date
05-Sep-2023

Overview

The IEC 60747-4:2007/AMD1:2017 amendment pertains to the international standard for semiconductor devices, specifically focusing on discrete microwave diodes and transistors. Developed by the International Electrotechnical Commission (IEC), this amendment updates critical definitions, measurement methods, and testing procedures related to microwave semiconductor components. It aims to ensure global harmonization in the characterization and performance evaluation of microwave diodes and transistors used in RF and microwave applications.

This standard amendment is essential for manufacturers, designers, and testers of semiconductor microwave devices, providing updated terminologies and test methods that improve precision, reliability, and consistency in device performance assessments.

Key Topics

  • Definitions and Terminology Updates
    The amendment revises key definitions such as RF power measured at the output port and clarifies terms like maximum stable gain (MSG) and intermodulation distortion (IMD). IMD is specified for nth order intermodulation distortion, an important parameter in microwave device performance.

  • Intermodulation Distortion Measurement
    Detailed updates to two-tone intermodulation distortion testing (P_n/P_1) are provided, including measurement principles, test procedures, terminology, and associated equations to accurately quantify nonlinear distortion products in microwave devices.

  • Test Procedures Enhancements
    Continuous sweeping of the phase angle by varying the length of the line stretcher during device testing is emphasized to obtain accurate RF characteristic data. This procedural refinement applies to several test scenarios outlined in the standard.

  • Revised Reference Documents
    The amendment replaces and updates normative references such as IEC 60050-702 (International Electrotechnical Vocabulary for oscillations and signals) and IEC 60747-1 (General semiconductor device standards) ensuring alignment with the latest terminological frameworks and testing methodologies.

  • Parameter Tables and Operating Conditions
    Updated RF characteristic tables include refined parameters for input/output power at intercept points and intermodulation distortion metrics, enhancing clarity and applicability in device specification sheets.

Applications

  • Microwave Communication Devices
    Ensures the standardized testing and measurement of microwave diodes and transistors used in RF amplifiers, oscillators, and mixers within wireless communication systems.

  • Circuit Design Validation
    Provides engineers with precise measurement techniques and definitions to validate high-frequency discrete semiconductor components used in radar, satellite, and wireless infrastructure designs.

  • Quality and Compliance Testing
    Supports semiconductor manufacturers and third-party labs in quality assurance and compliance verification to meet international performance criteria.

  • Performance Optimization
    Enables device designers to understand nonlinear effects (such as intermodulation distortion) in microwave components, facilitating the optimization of device performance in complex RF circuits.

Related Standards

  • IEC 60747-1: Semiconductor Devices – Part 1: General
    Foundational standard covering general semiconductor device definitions and test methods referenced and updated in this amendment.

  • IEC 60050-702: International Electrotechnical Vocabulary (Oscillations, Signals, and Related Devices)
    Provides terminology and definitions related to oscillations and signals, ensuring consistent language usage across semiconductor device standards.

  • IEC 60747-16-1: Microwave Integrated Circuits – Amplifiers
    Though deleted in this amendment, this related standard addresses microwave integrated circuits and amplifiers and may complement understanding of discrete semiconductor device behavior.

  • Other IEC 60747 Parts: Discrete Semiconductor Devices
    Additional parts under the IEC 60747 series cover other types of discrete devices and integrated components, useful for comprehensive semiconductor standardization.


By adhering to the updated IEC 60747-4:2007/AMD1:2017 amendment, industry professionals can ensure precise characterization of microwave diodes and transistors, helping to advance high-frequency semiconductor device innovation and interoperability on a global scale.

Keywords: IEC 60747-4 amendment, microwave diodes standards, microwave transistor testing, intermodulation distortion measurement, RF semiconductor devices, IEC semiconductor standards, discrete semiconductor devices, microwave device test procedures, RF power output definition, maximum stable gain (MSG).

Standard

IEC 60747-4:2007/AMD1:2017 - Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

English and French language
9 pages
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Frequently Asked Questions

IEC 60747-4:2007/AMD1:2017 is a standard published by the International Electrotechnical Commission (IEC). Its full title is "Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors". This standard covers: Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

Amendment 1 - Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors

IEC 60747-4:2007/AMD1:2017 is classified under the following ICS (International Classification for Standards) categories: 01 - GENERALITIES. TERMINOLOGY. STANDARDIZATION. DOCUMENTATION; 31.080.10 - Diodes; 31.080.30 - Transistors. The ICS classification helps identify the subject area and facilitates finding related standards.

IEC 60747-4:2007/AMD1:2017 has the following relationships with other standards: It is inter standard links to IEC 60747-4:2007. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.

IEC 60747-4:2007/AMD1:2017 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.

Standards Content (Sample)


IEC 60747-4 ®
Edition 2.0 2017-01
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
A MENDMENT 1
AM ENDEMENT 1
Semiconductor devices – Discrete devices –
Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 4: Diodes et transistors hyperfréquences

IEC 60747-4:2007-08/AMD1:2017-01(en-fr)

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IEC 60747-4 ®
Edition 2.0 2017-01
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
A MENDMENT 1
AM ENDEMENT 1
Semiconductor devices – Discrete devices –

Part 4: Microwave diodes and transistors

Dispositifs à semiconducteurs – Dispositifs discrets –

Partie 4: Diodes et transistors hyperfréquences

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.10; 31.080.30 ISBN 978-2-8322-3895-0

– 2 – IEC 60747-4:2007/AMD1:2017
© IEC 2017
FOREWORD
This amendment has been prepared by subcommittee 47E: Discrete semiconductor devices,
of IEC technical committee 47: Semiconductor devices.
The text of this amendment is based on the following documents:
CDV Report on voting
47E/499/CDV 47E/517/RVC
Full information on the voting for the approval of this amendment can be found in the report
on voting indicated in the above table.
_____________
2 Normative references
Replace the existing references IEC 60050-702 and IEC 60747-1 as follows:
IEC 60050-702, International Electrotechnical Vocabulary – Chapter 702: Oscillations, signals
and related devices (available at: )
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1/AMD 1:2010
Delete the existing reference IEC 60747-16-1:
IEC 60747-16-1:2001, Semiconductor devices – Part 16-1: Microwave integrated circuits –
Amplifiers
Amendment 1(2007)
7.2.2
Replace the existing definition with the following new definition:
RF power measured at the output port

7.2.15
Replace the existing note with the following new note:
NOTE The abbreviation “MSG” is in common use for the maximum stable gain.

7.2.19
Replace the existing entry with the following new entry:

© IEC 2017
7.2.19
intermodulation distortion
P /P
n 1
ratio of the nth order component of the output power to the fundamental component of the
output power
Note 1 to entry: The abbreviation “IMD ” is in common use for the nth order intermodulation distortion.
n
Table 3 – RF characteristics
Replace parameters 7.3.2.2.2.17 with the following new parameters:
Categories
Subclause Parameters Min. Typ. Max.
A B
7.3.2.2.2.17 Either + +
Inpu
...

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