TC 113 - Nanotechnology for electrotechnical products and systems

IEC TS 62876-3-4:2025, which is a Technical Specification, establishes a standardized guideline to assess
• reliability of metallic interfaces
of Ohmic-contacted field-effect transistors (FETs) using 2D nano-materials by quantifying
• linearity of current-voltage (I-V) output curves
for devices with various materials combinations of van der Waals (vdW) interfaces.
For metallic interfaces with 2D materials (eg. graphene, MoS2, MoTe2, WS2, WSe2, etc) and metals (eg. Ti, Cr, Au, Pd, In, Sb, etc), the reliability of Ohmic contact is quantified.
For FETs consisting of 2D materials-based channels (eg. MoS2, MoTe2, WS2, WSe2, etc), the reliability of Ohmic contact when varying contacting metal, channel length, channel thickness, applied voltage, and surface treatment condition is quantified.
The reliability of the metallic contacts is quantified from the linearity of I-V characteristics measured over extended time periods.

IEC TS 62607-6-27:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• field-effect mobility
for semiconducting two-dimensional (2D) materials by the
• field-effect transistor (FET) method.
For two-dimensional semiconducting materials, the field-effect mobility is determined by fabricating a FET test structure and measuring the transconductance in a four-terminal configuration.
- This method can be applied to layers of semiconducting two-dimensional materials, such as graphene, black phosphorus (BP), molybdenum disulfide (MoS₂), molybdenum ditelluride (MoTe₂), tungsten disulfide (WS₂), and tungsten diselenide (WSe₂).
- The four-terminal configuration improves accuracy by eliminating parasitic effects from the probe contacts and cables

IEC TS 62607-6-26:2025, which is a Technical Specification, establishes a standardized method to determine the mechanical key control characteristics (KCCs)
• Young's modulus (or elastic modulus),
• residual strain,
• residual stress, and
• fracture stress
of 2D materials and nanoscale films using the
• bulge test.
The bulge test is a reliable method where a pressure differential is applied to a freestanding film, and the resulting deformation is measured to derive the mechanical properties.
• This method is applicable to a wide range of freestanding 2D materials, such as graphene, and nanometre-thick films with thicknesses typically ranging from 1 nm to several hundred nanometres.
• This document ensures the characterization of mechanical properties essential for assessing the structural integrity and performance of materials in applications such as composite additives, flexible electronics, and energy harvesting devices.

IEC TS 62607-6-23:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic (KCC):
• carrier mobility and sheet resistance
for graphene thin films by:
• Hall measurement.
The carrier mobility is derived by the product of the Hall coefficient and the electric conductivity and the sheet resistance is derived by the product of the longitudinal resistance and the aspect ratio of a Hall device.
• The method is applicable for graphene thin film Hall devices with length and width greater than 100 micrometers.
The document is developed to complete the fabrication and measurement of devices using cost-effective processes and equipment. Due to the high cost and low cost-performance ratio of photolithography processes and equipment, this document does not utilize photolithography processes and equipment.

IEC TS 62607-6-33:2025, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• defect density (%, nm2)
of single layer graphene films by
• electron energy loss spectroscopy (EELS in transmission electron microscopy (TEM)).
This document outlines a method for quantitative measurement of defects in graphene at the nanoscale.
The method specified in this document is applicable to single layer graphene acquired via chemical vapour deposition (CVD), roll-to-roll production and exfoliated graphene flakes to estimate the defect density.
In order to obtain reliable data, it is essential that the procedure is consistent for each specified condition from the preparation of the TEM specimen to its observation. It is essential to maintain the spatial resolution below 1 nm by alignment of the beam. The dispersion value, which covers the entire energy loss near edge structure (ELNES) region of the carbon-K edge and maintains the highest energy resolution corresponds to 0,1 eV/ch. Defects in graphene are determined by measuring the spectral differences between sp2 hybridized and sp2/sp3 hybridized atoms, which are obtained by calculating the amplitude ratio of the π* and σ* orbital spectra.

IEC TS 62607-6-28:2025, which is a Technical Specification, establishes two standardized methods to determine the key control characteristic
• number of layers
for graphene layers by
• Raman spectroscopy.
This document presents two complementary methods for determining the number of layers in graphene-related products: Method A, which analyzes the lineshape of the 2D-peak in the Raman spectrum, and Method B, which measures the Raman intensity from the underlying silicon substrate. The two methods can be employed individually but combining both methods enhances accuracy and extends the detection range for the number of layers and stacking configurations.
- The method is intended to be used for graphene layers prepared by mechanical exfoliation, but also can be used with care for other high quality graphene layers, such as graphene layers prepared by chemical vapor deposition.
- The method can be used for graphene layers with AB and ABC stacking on a substrate. Its lateral size should be at least 2 µm.
- Method A is effective for AB stacked graphene up to 4 layers but becomes less reliable with more layers due to peak overlap.
- Method B can detect up to 10 layers in AB and ABC stacking but oxidized silicon substrate (SiO2 on silicon substrate) is required.
- The comparison of Method A and Method B can be found in Annex A.

ISO TS 23359:2025, which is a Technical Specification, describes methods for characterising the chemical properties of powders or liquid dispersions containing graphene-related two-dimensional materials, using a set of suitable measurement techniques.
This document covers the determination of elemental composition, oxygen to carbon ratio, trace metal impurities, weight percentage of chemical species and functional groups present, by use of the following techniques:
• X-ray photoelectron spectroscopy (XPS);
• thermogravimetric analysis (TGA);
• inductively coupled plasma mass spectrometry (ICP-MS);
• Fourier-transform infrared spectroscopy (FTIR).
This document covers sample preparation, protocols and data analysis for the different techniques.

IEC TS 62607-6-35:2025, which is a Technical Specification, establishes standardized methods to determine the structural key control characteristics
• apparent density (da),
• tap density (dt), and
• compressed density (dc)
for graphene in powder form by
• free-pouring, tapping and compressing method.

IEC TS 62607-11-1:2025, which is a Technical Specification, provides a standardized method for measuring shielding effectiveness on nanomaterials including carbon nanotubes (CNTs) in the near-field region. This document provides:
- recommendations for sample preparation,
- outlines of the experimental procedures to measure shielding effectiveness of CNTs in thin films,
- methods of interpretation of results and discussion of data analysis, and
- case studies.

IEC TS 62565-5-3:2025 which is a Technical Specification, establishes a standardized method to determine a blank detail specification (BDS) for
‭• silicon nanosized materials
used for
‭• negative electrode of lithium-ion batteries.
This document is intended to be used for silicon nanosized materials for the negative electrode of lithium-ion batteries which have been widely employed in the fields of
- portable devices,
- power tools,
- electric vehicles, and
- energy storage system.
Numeric values for the key control characteristics are left blank as they will be specified between customer and supplier in the detail specification (DS). In the DS key control characteristics can be added or removed if agreed between customer and supplier.

IEC TS 62565-4-4:2025 which is a Technical Specification, establishes a standardized method to determine a blank detail specification (BDS) for
- quantum dot enabled light conversion film (Q-LCF).
This document is intended to be used for nano-enabled photoelectric display, based on liquid crystal display (LCD).
The relevant key control characteristics (KCC) of Q-LCF are listed, including physical, mechanical and optical properties, and stability. For each KCC, measurement methods and existing standards are reported.
Numeric values for the KCCs are left blank as they will be specified between customer and supplier in the detail specification (DS). In the DS KCCs can be added or removed if agreed between customer and supplier.

IEC TS 62876-4-1:2025, which is a Technical Specification, establishes a general reliability testing programme to verify the reliability of the performance of quantum dots nanomaterials, and quantum dot enabled light conversion films (Q-LCFs).
The Q-LCF is used as subassemblies for the fabrication of nano-enabled photoelectrical display devices, mainly liquid crystal display (LCD) currently, with other components.
This testing programme defines standardized aging conditions, methodologies and data assessment for Q-LCF product.
The results of these tests define a stability under standardized aging conditions for quantitative evaluation of the reliability of the Q-LCF.
The procedures specified in this document were designed for Q-LCF but can be extended to serve as a guideline for other kinds of light conversion films or related subassemblies as well.

IEC 62607-8-4:2024 specifies a measurement protocol to determine the key control characteristic
- activation energy of electronic trap states
for metal-oxide interfacial devices by
- low-frequency-noise spectroscopy
The noise spectra peak temperatures are obtained within a designated temperature range. Activation energies are then calculated based on the frequency dependence of the peak temperatures to analyse the energy levels associated with the electronic trap states. The activation energy is determined by the temperature dependence of the capture time at electron traps under the assumption that it is described by an Arrhenius function.
- In metal-oxide interfacial devices, electrical conductance is observed through an oxide nanolayer sandwiched between metal electrodes.
- The size of the conductive path in metal-oxide interfacial devices is dependent on the current value and is usually nanoscale in diameter, taking the form of a filamentary wire. This evaluation method is useful for analysing the electronic trap states in nanowires and other miniaturized devices that have nanolayers.

ISO TS 80004-13:2024 This document defines terms for graphene, graphene-related two-dimensional (2D) materials and other 2D materials. It includes related terms for production methods, properties and characterization.
It is intended to facilitate communication between organizations and individuals in research, industry and other interested parties and those who interact with them.

IEC TS 62607-6-30:2024 establishes a standardized method to determine the chemical key control characteristic
- anion concentration
for powder of graphene-based material by
- ion chromatography.
In this document, the measured anions are fluoride, chloride, nitrite, bromide, nitrate, sulphate, and phosphate. These anions, present in the extraction solution of graphene-based materials, are separated into distinct elution bands on the ion chromatographic separation column and subsequently measured using a conductivity detector. Quantification of these anions is accomplished by establishing a proportional relationship between the measured signal (peak area or peak height) and the concentration of each anion. This is achieved by calibrating the system using a series of standards containing known amounts of each anion. Subsequently, unknown samples are analysed under the same conditions as the standards to determine their anion concentrations.
- Powder of graphene-based material addressed by this document includes graphene oxide, reduced graphene oxide and functionalized graphene, graphene, bilayer graphene, trilayer graphene and few-layer graphene.
Note: This document can also be used for other carbonaceous material such as graphite and graphite oxide.
- This document targets graphene-based material manufacturers and downstream users to guide their material design, production and quality control.

IEC TS 62607-2-6:2024 which is a technical specification, specifies a protocol for determining the key control characteristic
- thermal diffusivity
for vertically-aligned carbon nanotube (VACNT) films grown on solid substrates by
- flash method.
A light pulse from a flash lamp or a laser is irradiated onto the front surface (substrate side) of the VACNT film on solid substrates. Then, the temperature change of the other side of the specimen is monitored in real time after the pulse irradiation. The thermal diffusivity of the VACNT film can be analysed from the time variation of this temperature change.
- This method is applicable for evaluating the thermal transport properties of the VACNT films that can be used as thermal interface materials in electronics assembly.

IEC TS 62607-9-2:2024, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• magnetic field distribution
of nanomagnetic materials, structures and devices by the
• magneto-optical indicator film technique.
The magnetic field distribution is derived by utilizing a magneto optical indicator film, which is a thin film of magneto-optic material that is placed on the surface of an object exhibiting a spatially varying magnetic field distribution. The Faraday effect is then employed to measure the magnetic field strength by analysing the rotation of the polarization plane of light passing through the magneto-optic film.
The method is applicable for measuring the stray field distribution of flat nanomagnetic materials, structures and devices.
- The method can especially be used to perform fast quantitative measurements of stray field distributions at the surface of an object.
- The magneto-optic indicator film technique (MOIF) is a fast, non-destructive method, making it an attractive option for materials analysis and testing in the industry.
- MOIF measurements can be done without any sample preparation and do not rely on specific surface properties of the object. It can be applied to the characterization of rough samples as well as of samples with non-magnetic cover layers.
- MOIF can quantitatively measure magnetic field distributions:
• with a one-shot measurement which typically takes a few seconds
• over areas of several square centimetres (over diameters of up to 15 cm with special techniques)
• in a field range from 1 mT to more than 100 mT
• with down to 1 µm spatial resolution
- Although techniques with nano-scale resolution are suitable for analysing the details of magnetic field structure, their ability to characterize larger areas is limited by their scanning area. Therefore, the MOIF technique is an indispensable complementary method that can offer a more comprehensive understanding of material properties.
This document focuses on the calibration procedures, calibrated measurement process, and evaluation of measurement uncertainty to ensure the traceability of quantitative magnetic field measurements obtained through the magneto-optic indicator film technique.

IEC TS 62607-6-12:2024 establishes a standardized method to determine the key control characteristic
- number of layers
for films consisting of graphene by
- Raman spectroscopy and
- optical reflection.
Criteria for the determination of the number of layers are the G-peak integrated intensity and the optical contrast. Both methods enable to distinguish between graphene and multilayer graphene. However, neither method on its own nor the combination of the two enable a determination of the number of layers in all possible cases (especially regarding all possible stacking angles). But the comparison of the values deduced by each method allows to discriminate whether the determined number of layers is correct and can be specified or not.
- The method is applicable to exfoliated graphene and graphene grown on or transferred to a substrate with a small defect density, low surface contamination (e.g. transfer residue) and number of layers up to 5.
- The method is suitable for the following substrates:
a) glass (soda lime glass or similar with a refractive index between 1,45 and 1,55 at 532 nm);
b) oxidized silicon (SiO2 on silicon, with a SiO2 thickness of 90 nm ± 5 nm).
- The spatial resolution is in the order of 1 µm given by the spot size of the exciting laser.

IEC TS 62607-6-4:2024 has been prepared by IEC technical committee 113: Nanotechnology for electrotechnical products and systems. It is a Technical Specification.
This second edition cancels and replaces the first edition published in 2016. This edition constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous edition:
a) changed the document title to better reflect its purpose and application:
old title: Graphene – Surface conductance measurement using resonant cavity
new title: Graphene based materials – Surface conductance: non-contact microwave resonant cavity method.
b) replaced former Figure 1 with new Figure 1 and Figure 2, to better illustrate the method’s fundamentals and its implementation for a non-technical reader.
This part of IEC 62607 establishes a standardized method to determine the key control characteristic
a) surface conductance
for films of graphene and graphene-based materials by the
b) non-contact microwave resonant cavity method
The non-contact microwave resonant cavity method monitors the microwave resonant frequency shifts and changes in the cavity’s quality factor during the insertion of the specimen into the microwave cavity, as a function of the specimen surface area. The empty cavity is an air-filled standard R100 rectangular waveguide operated at one of the resonant frequency modes, typically at 7,5 GHz [4].
1) The method is applicable for graphene materials which are synthesized by chemical vapour deposition (CVD) on metal substrates, epitaxial growth on silicon carbide (SiC), obtained from reduced graphene oxide (rGO), or mechanically exfoliated from graphite [5].
2) This measurement does not explicitly depend on the thickness of the nano-carbon layer. The thickness of the specimen does not need to be known, but it is assumed that the lateral dimensions are uniform over the specimen area.
NOTE In some countries, the R100 standard waveguide is referenced as WR-90.

IEC TS 62607-8-3:2023 This part of IEC 62607, which is a Technical Specification, specifies a measurement protocol to determine the key control characteristics
- analogue resistance change, and
- resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
- electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide interfacial devices. The linearity in the relationship of the variation of conductance and the pulse number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is simultaneously computed in the fitting process.
- This method is applicable for evaluating computing devices composed of the metal-oxide interfacial device, for example, product-sum circuits, which record the learning process as the analogue resistance change.

IEC TS 62607-7-2:2023 specifies the efficiency testing of photovoltaic cells (excluding multi-junction cells) under indoor light. Although it is primarily intended for nano-enabled photovoltaic cells (organic thin-film, dye-sensitized solar cells (DSC), and Perovskite solar cells), it can also be applied to other types of photovoltaic cells, such as Si, CIGS, GaAs cells, and so on.

ISO 80004-1:2023 This document defines core terms in the field of nanotechnology. This document is intended to facilitate communication between organizations and individuals in industry and those who interact with them.

IEC TS 62607-6-7:2023 establishes a method to determine the key control characteristics sheet resistance RS [measured in ohm per square (Ω/sq)], by the van der Pauw method, vdP.
The sheet resistance RS is derived by measurements of four-terminal electrical resistance performed on four electrical contacts placed on the boundary of the planar sample and calculated with a mathematical expression involving the two resistance measurements.
The measurement range for RS of the graphene samples with the method described in this document goes from 10−2 Ω/sq to 104 Ω/sq.
The method is applicable for CVD graphene provided it is transferred to quartz substrates or other insulating materials (quartz, SiO2 on Si), as well as graphene grown from silicon carbide.
The method is complementary to the in-line four-point-probe method (4PP, IEC 62607-6-8) for what concerns the measurement of the sheet resistance and can be applied when it is possible to reliably place contacts on the sample boundary, avoiding the sample being scratched by the 4PP.
The outcome of the van der Pauw method is independent of the contact position provided the sample is uniform, which is typically not true for graphene at this stage. This document considers the case of samples with non-strictly uniform conductivity distribution and suggests a way to consider the sample inhomogeneity as a component of the uncertainty on RS.

IEC TS 62565-5-1:2023, which is a Technical Specification, establishes a blank detail specification (BDS) for nanoporous activated carbon used for electrochemical capacitors.
Numeric values for the key control characteristics are left blank as they will be specified between customer and supplier in the detail specification (DS). In the DS key control characteristics can be added or removed if agreed between customer and supplier.

IEC TS 62607-6-8:2023 establishes a method to determine the key control characteristic sheet resistance RS [measured in ohm per square (Ω/sq)], by the in-line four-point probe method, 4PP.
The sheet resistance RS is derived by measurements of four-terminal electrical resistance performed on four electrodes placed on the surface of the planar sample.
The measurement range for RS of the graphene samples with the method described in this document goes from 10−2 Ω/sq to 104 Ω/sq.
The method is applicable for CVD graphene provided it is transferred to quartz substrates or other insulating materials (quartz, SiO2 on Si, as well as graphene grown from silicon carbide.
The method is complementary to the van der Pauw method (IEC 62607-6-7) for what concerns the measurement of the sheet resistance and can be useful when it is not possible to reliably place contacts on the sample boundary.

IEC TS 62565-1:2023 which is a Technical Specification, defines the system of blank detail specifications for nanomaterials and nano-assemblies as well as final nano-enabled products addressed in the nanomanufacturing value chain.
It defines the concepts of blank detail specification (BDS), detail specification (DS) and key control characteristic (KCC). Furthermore, it provides guidelines how to develop and use product specifications, particularly the IEC 62565 series, in the field of nanotechnology.
This document also provides guidelines regarding the certification and reliability aspects for products specified by a DS and associated KCCs.
NOTE 1 The IEC 62565 series uses an open generic structure that can be flexibly adapted to technical developments. The double indexing of the individual parts allows grouping into technology areas without restriction due to an overly strict hierarchical structure.
NOTE 2 Key elements of the IEC 62565 series are a consensus-based set of key control characteristics (KCCs) with clear definitions and standardized measurement procedures to measure them.

IEC TS 62607-6-17:2023 establishes a standardized method to determine the key control characteristic order parameter for graphene-based material and layered carbon material by X-ray diffraction (XRD) and transmission electron microscopy.
The order parameter is analysed from two perspectives: z-axis and x-y-axis. In the z-axis the order parameter is derived from the full width at half maximum (FWHM) of peak (002) in the XRD spectrum. In the x-y-axis, it is derived from the FWHM of peak (100) corresponding to diffraction patterns obtained by SAED (selected area electron diffraction) technique, which is routinely performed on most transmission electron microscopes in the world.
The method is applicable for graphene-based material and layered carbon material including graphite, expanded graphite, amorphous carbon, vitreous carbon or glassy carbon, the structures of which are clarified by other characterization techniques.
The method is applicable for differentiating few-layer graphene or reduced graphene oxide from layered carbon material.
Typical application area is quality control in manufacturing to ensure batch-to-batch reproducibility.
NOTE Graphene oxide, one type of graphene-based material, is not within the scope of this document.

IEC TS 62607-6-2:2023 establishes a standardized method to determine the key control characteristic
- number of layers
for graphene flakes by a combination of
- atomic force microscopy,
- optical transmission, and
- Raman spectroscopy

IEC TS 62607-6-5:2022(E) establishes a standardized method to determine the key control characteristics
contact resistance, and
sheet resistance  for graphene-based materials and other two-dimensional materials by a
transmission line measurement.  The method uses test structures applied to the 2D material by photolithographic methods consisting of several metal electrodes with increasing spacing between the electrodes. By a measurement of the voltage drop between different pairs of electrodes, sheet resistance and contact resistance can be calculated.
The method can be applied to any other two-dimensional materials which are subject to electrical metal contact on top of the materials.
The method provides accurate and reproducible results, if the electrical contact formed between the two-dimensional material and the metal electrodes provides ohmic contact property.

IEC TS 62607-6-18:2022(E) establishes a standardized method to determine the chemical key control characteristic
functional groups  for functionalized graphene-based material and graphene oxide by
thermogravimetry analysis (TGA) coupled with Fourier transform infrared spectroscopy (FTIR), referred to as TGA-FTIR.  The content of functional groups is derived by changes in mass of the sample as a function of temperature using TGA. Materials evolved during these mass changes are then analysed using coupled FTIR to identify functional groups.
The functional groups determined according to this document will be listed as a key control characteristic in the blank detail specification for graphene IEC 62565-3-1 for graphene powder.
The method is applicable for functionalized graphene powder and graphene oxide that can be pyrolysed and gasified with elevated temperature during TGA.
Typical application areas are quality control for graphene manufacturers, and product selection for downstream users.

IEC TS 62607-5-4:2022 specifies the measuring method of the band gap energy of a nanomaterial using electron energy loss data of transmission electron microscope.
The method specified in this document is applicable to semiconducting and insulating nanomaterials to estimate the band gap.
The measurement to get reliable data is performed under the consistent conditions of TEM observation and specimen thickness. The applicable measurement range of band gap energy is more than 2 eV.

IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic
carrier concentration  for semiconducting two-dimensional materials by the
field effect transistor (FET) method.  For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.

IEC TS 62607-2-5:2022 specifies the protocols for determining the mass density of vertically-aligned carbon nanotubes (VACNTs) by X-ray absorption method. This document outlines experimental procedures, data formats, and some case studies. These protocols are applicable to VACNT films with thickness larger than several tens of micrometres. There are no limitations in materials for substrate.

IEC TS 62607-6-22:2022 establishes a standardized method to determine the key control characteristic
ash content  of powder and dispersion of graphene-based material by
incineration.  The ash content is derived by residue obtained after incineration under the operating conditions specified in this document, being divided by the mass of the dried test portion.
The method is applicable for graphene, graphene oxide and reduced graphene oxide in forms of both dry powder and dispersion. This document can be used as reference for graphite oxide and other modified graphene.
Typical application areas of this method are research, manufacturer and downstream user to guide material processing and quality control.

IEC TS 62607-6-20:2022 (EN) IEC TS 62607 establishes a standardized method to determine the chemical key control characteristic
- metallic impurity content
for powders of graphene-based materials by
- inductively coupled plasma mass spectrometry (ICP-MS).
The metallic impurity content is derived by the signal intensity of measured elements through MS spectrum of ICP-MS.
- The method is applicable for powder of graphene and related materials, including bilayer graphene (2LG), trilayer graphene (3LG), few-layer graphene (FLG), reduced graphene oxide (rGO) and graphene oxide (GO).
– The typical application area is in the microelectronics industry, e.g. conductive pastes, displays, etc., for manufacturers to guide material design, and for downstream users to select suitable products.

IEC TS 62607-6-21:2022 establishes a standardized method to determine the chemical key control characteristics
- elemental composition, and
- C/O ratio
for powders of graphene-based materials by
- X-ray photoelectron spectroscopy (XPS).
The elemental composition (species and relative abundance) is derived by the elemental binding energy and integral peak area at corresponding portion of XPS spectrum.
- The elemental composition refers to main elements in graphene powders, typically including carbon (C), oxygen (O), nitrogen (N), sulfur (S) , chloride (Cl) and silicon (Si).
- This document is applicable to graphene powders consisting of graphene, bilayer graphene (2LG), trilayer graphene (3LG), few-layer graphene (FLG), graphene nanoplate (GNP), reduced graphene oxide (rGO), graphene oxide (GO), and functionalized graphene powders.
- Typical application areas are the microelectronics and thermal management industries, e.g. batteries, integrated circuits, high-frequency electronics. This document can be used by manufacturers in research and development and by downstream users for product selection.

IEC 62565-5-2:2022(E) which is a Technical Specification, establishes a blank detail specification that lists the relevant key control characteristics (KCC) including chemical, physical, structural, and electrochemical characteristics of nano-enabled electrode for electrochemical capacitors. Electrodes of both electric double layer capacitors and pseudo capacitors with nano/ nanostructured materials such as nanoporous activated carbon, graphene, carbon nanotube, carbon black, carbon aerogel, carbon nanomaterial coating collector, etc., are included. For other electrodes, this document can be used for reference.
In addition, this document enables the customer to specify requirements in a standardized manner and to verify through standardized methods that the nano-enabled electrode of the electrochemical capacitors meets the required properties.

IEC TS 62876-3-1:2022(E) establishes a standardized method to determine the
• stability
of films of graphene-based material by a
• temperature and humidity test.
It establishes a general methodology for reliability stress screening (RSS) to qualify the use of graphene-based material in its subsequent product value stage. The intention is to prepare test samples undergoing the same or similar failure mechanisms as the graphene-based material in the final product.

IEC 62607-6-9:2022(EN) establishes a standardized method to determine the key control characteristic
• sheet resistance
for films of graphene-based materials by
• eddy current method.

IEC TS 62607-6-11:2022(EN) establishes a standardized method to determine the key control characteristic
• defect density nD
of graphene films grown by chemical vapour deposition as well as exfoliated graphene flakes by
• Raman spectroscopy

ISO TS 23302:2021 This document specifies requirements and recommendations for the identification of measurands to characterize nano-objects and their agglomerates and aggregates, and to assess specific properties relevant to the performance of materials that contain them. It provides recommendations for relevant measurement.

IEC TS 62607-6-19:2021(E) establishes a standardized method to determine the chemical key control characteristic
• elemental composition
for powder consisting of graphene-based material by
• CS analyser and ONH analyser.
The method as described in this document determines the content of carbon (C), sulfur (S), oxygen (O), nitrogen (N) and hydrogen (H).
The carbon (C) and sulfur (S) content in graphene powder is derived by the content of converted CO, CO2 and SO2, which is determined by infrared gas detector (IGD) using a non-dispersive infrared adsorption method in CS analyser.
The content of oxygen (O), nitrogen (N) and hydrogen (H) in graphene powder is derived by ONH analyser using pyrolysis method. The O content is obtained according to the content of converted CO and CO2, which is determined by IGD using a non-dispersive infrared adsorption method. The N content is obtained according to the content of converted N2, which is determined by a thermal conductivity detector (TCD) method. The H content is obtained by measuring converted H2 or H2O, corresponding to TCD or IGD method.
• The method is applicable for graphene, graphene oxide (GO) and reduced graphene oxide (rGO) in powder form.

IEC TS 62607-9-1:2021(E) establishes a standardized method to characterize spatially varying magnetic fields with a spatial resolution down to 10 nm for flat magnetic specimens by magnetic force microscopy (MFM). MFM primarily detects the stray field component perpendicular to the sample surface. The resolution is achieved by the calibration of the MFM tip using magnetically nanostructured reference materials.

IEC TS 62607-6-10:2021(E) establishes a standardized method to determine the electrical key control characteristic
– sheet resistance (Rs)
for films of graphene-based materials by
– terahertz time domain spectroscopy (THz-TDS).
In this technique, a THz pulse is sent to the graphene-based material. The transmitted or reflected THz waveform is measured in the time domain and transformed to the frequency domain by the fast Fourier transform (FFT). Finally, the spectrum is fitted to the Drude model (or another comparable model) to obtain the sheet resistance.
• This non-contact inspection method is non-destructive, fast and robust for the mapping of large areas of graphene films, with no upper sample size limit.
• The method is applicable for statistical process control, comparison of graphene films produced by different vendors, or to obtain information about imperfections on the microscale such as grain boundaries and defects, etc.
• The method is applicable for graphene grown by chemical vapour deposition (CVD) or other methods on or transferred to dielectric substrates, including but not limited to quartz, silica (SiO2), silicon (Si), sapphire, silicon carbide (SiC) and polymers.
• The minimum spatial resolution is in the order of 300 µm (at 1 THz) given by the diffraction limited spot size of the THz pulse.

IEC TS 62607-6-6:2021(E) establishes a standardized method to determine the structural key control characteristic
• strain uniformity
for single-layer graphene by
• Raman spectroscopy.
The width of the 2D-peak in the Raman spectrum is analysed to calculate the strain uniformity parameter which is a figure of merit to quantify the influence of nano-scale strain variations on the electronic properties of the layer. The classification will help manufacturers to classify their material quality to provide an upper limit of the electronic performance of the characterized graphene, to decide whether or not the graphene material quality is potentially suitable for various applications.

ISO TS 22292:2021 This document provides guidance for sample preparation, data acquisition by transmission electron microscopy, data processing, and three-dimensional image reconstruction to measure size and shape parameters of nano-objects on rod-shaped supports. The method is applicable to samples dispersed on or within an electron-transparent rod-shaped support.

This document defines terms related to the characterization of nano-objects in the field of nanotechnologies.
It is intended to facilitate communication between organizations and individuals in research, industry and other interested parties and those who interact with them.

IEC TR 63258:2021 is a Technical Report focused on the practical protocol of ellipsometry to evaluate the thickness of nanoscale films. This document does not include any specification of the ellipsometers, but suggests how to minimize the data variation to improve data reproducibility.

This document specifies the sequence of methods for characterizing the structural properties of graphene, bilayer graphene and graphene nanoplatelets from powders and liquid dispersions using a range of measurement techniques typically after the isolation of individual flakes on a substrate. The properties covered are the number of layers/thickness, the lateral flake size, the level of disorder, layer alignment and the specific surface area. Suggested measurement protocols, sample preparation routines and data analysis for the characterization of graphene from powders and dispersions are given.

IEC TS 62607-8-2:2021 There are two types of thermally stimulated current (TSC) measurement methods, classified by the origin of the current. One is generated by the detrapping of charges. The other one is generated by depolarization. The latter is frequently called thermally stimulated depolarization current (TSDC). This part of IEC 62607 focuses on the latter method, and specifies the measurement procedures to be developed for determining polarization properties of metal-oxide interfacial devices.
IEC TS 62607-8-2:2021 includes:
- outlines of the experimental procedures used to measure TSDC,
- methods of interpretation of results and discussion of data analysis, and
- case studies.