IEC TS 62607-8-3:2023

IEC TS 62607-8-3 ®
Edition 1.0 2023-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key Control Characteristics –
Part 8-3: Nano-enabled metal-oxide interfacial devices – Analogue resistance
change and resistance fluctuation: Electrical resistance measurement

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IEC TS 62607-8-3 ®
Edition 1.0 2023-10
TECHNICAL
SPECIFICATION
colour
inside
Nanomanufacturing – Key Control Characteristics –

Part 8-3: Nano-enabled metal-oxide interfacial devices – Analogue resistance

change and resistance fluctuation: Electrical resistance measurement

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 07.120; 07.030 ISBN 978-2-8322-7640-2

– 2 – IEC TS 62607-8-3:2023 © IEC 2023
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms, definitions, acronyms, and abbreviated terms . 6
3.1 Terms and definitions . 6
3.2 Terms specific to this document . 7
3.3 Abbreviated terms . 7
4 Measurement of resistance . 7
4.1 General . 7
4.2 Method for processing and fabrication of DUT . 8
4.3 Experimental procedures . 8
5 Reporting data . 9
6 Data analysis and interpretation of results . 9
6.1 General . 9
6.2 Parameter fitting . 10
6.3 Interpretation of results . 10
Annex A (informative) Case study . 11
A.1 Measurement of the analogue change and the fluctuation of the resistance . 11
A.1.1 General . 11
A.1.2 I-V measurement of TiN/Ta-oxide/TiN . 11
A.1.3 Data analysis . 15
Bibliography . 18

Figure 1 – Example of the experimental schematic diagram for the resistance
measurement . 8
Figure 2 – Photos of the sample stage . 8
Figure A.1 – Transmission electron microscopy image of TiN/Ta-oxide/TiN . 11
Figure A.2 – DC I-V measurement . 12
Figure A.3 – Pulse measurement . 13
Figure A.4 – Initial measurement . 13
Figure A.5 – Repeated measurement . 13
Figure A.6 – Post-measurement characterization . 14
Figure A.7 – Conductance increasing process . 16
Figure A.8 – Normalized conductance in increasing process . 16
Figure A.9 – Conductance decreasing process . 16
Figure A.10 – Normalized conductance in decreasing process . 17

Table 1 – Measurement sequence of analogue resistance change and its parameters . 9
Table A.1 – Measurement sequence of analogue resistance change and its
parameters (case study) . 14
Table A.2 – Results of parameter fitting . 17
Table A.3 – Results of parameter fitting using normalized conductance (normalize
range = ΔG in Table A.2) . 17
max
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
NANOMANUFACTURING –
KEY CONTROL CHARACTERISTICS –
Part 8-3: Nano-enabled metal-oxide interfacial devices –
Analogue resistance change and resistance fluctuation:
Electrical resistance measurement

FOREWORD
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IEC TS 62607-8-3 has been prepared by IEC technical committee 113: Nanotechnology
standardization for electrical and electronic products and systems. It is a Technical
Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/743/DTS 113/767/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
– 4 – IEC TS 62607-8-3:2023 © IEC 2023
The language used for the development of this Technical Specification is English.
A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing –
Key control characteristics, can be found on the IEC website.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
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The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
 transformed into an International standard,
 reconfirmed,
 withdrawn,
 replaced by a revised edition, or
 amended.
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INTRODUCTION
Nano-enabled metal-oxide interfaces, such as an oxide nanolayer sandwiched by metal
electrodes, are the essential components of IoT devices for computing. Nano-enabled functions
derived from the nanoscale metal-oxide interface and the oxide nanolayer appear, such as a
significant change in electrical resistance. The analogue resistance change is the typical
characteristic which possesses the large potential for non-von Neumann information processing.
More concretely, the metal-oxide interfacial device is an indis
...