WG 3 - TC 113/WG 3

IEC 62607-8-4:2024 specifies a measurement protocol to determine the key control characteristic
- activation energy of electronic trap states
for metal-oxide interfacial devices by
- low-frequency-noise spectroscopy
The noise spectra peak temperatures are obtained within a designated temperature range. Activation energies are then calculated based on the frequency dependence of the peak temperatures to analyse the energy levels associated with the electronic trap states. The activation energy is determined by the temperature dependence of the capture time at electron traps under the assumption that it is described by an Arrhenius function.
- In metal-oxide interfacial devices, electrical conductance is observed through an oxide nanolayer sandwiched between metal electrodes.
- The size of the conductive path in metal-oxide interfacial devices is dependent on the current value and is usually nanoscale in diameter, taking the form of a filamentary wire. This evaluation method is useful for analysing the electronic trap states in nanowires and other miniaturized devices that have nanolayers.

IEC TS 62607-9-2:2024, which is a Technical Specification, establishes a standardized method to determine the key control characteristic
• magnetic field distribution
of nanomagnetic materials, structures and devices by the
• magneto-optical indicator film technique.
The magnetic field distribution is derived by utilizing a magneto optical indicator film, which is a thin film of magneto-optic material that is placed on the surface of an object exhibiting a spatially varying magnetic field distribution. The Faraday effect is then employed to measure the magnetic field strength by analysing the rotation of the polarization plane of light passing through the magneto-optic film.
The method is applicable for measuring the stray field distribution of flat nanomagnetic materials, structures and devices.
- The method can especially be used to perform fast quantitative measurements of stray field distributions at the surface of an object.
- The magneto-optic indicator film technique (MOIF) is a fast, non-destructive method, making it an attractive option for materials analysis and testing in the industry.
- MOIF measurements can be done without any sample preparation and do not rely on specific surface properties of the object. It can be applied to the characterization of rough samples as well as of samples with non-magnetic cover layers.
- MOIF can quantitatively measure magnetic field distributions:
• with a one-shot measurement which typically takes a few seconds
• over areas of several square centimetres (over diameters of up to 15 cm with special techniques)
• in a field range from 1 mT to more than 100 mT
• with down to 1 µm spatial resolution
- Although techniques with nano-scale resolution are suitable for analysing the details of magnetic field structure, their ability to characterize larger areas is limited by their scanning area. Therefore, the MOIF technique is an indispensable complementary method that can offer a more comprehensive understanding of material properties.
This document focuses on the calibration procedures, calibrated measurement process, and evaluation of measurement uncertainty to ensure the traceability of quantitative magnetic field measurements obtained through the magneto-optic indicator film technique.

IEC TS 62607-8-3:2023 This part of IEC 62607, which is a Technical Specification, specifies a measurement protocol to determine the key control characteristics
- analogue resistance change, and
- resistance fluctuation
for nano-enabled metal-oxide interfacial devices by
- electrical resistance measurement.
Analogue resistance change as a function of applied voltage pulse is measured in metal-oxide interfacial devices. The linearity in the relationship of the variation of conductance and the pulse number is evaluated using the parameter fitting. The parameter of the resistance fluctuation is simultaneously computed in the fitting process.
- This method is applicable for evaluating computing devices composed of the metal-oxide interfacial device, for example, product-sum circuits, which record the learning process as the analogue resistance change.

IEC TS 62565-1:2023 which is a Technical Specification, defines the system of blank detail specifications for nanomaterials and nano-assemblies as well as final nano-enabled products addressed in the nanomanufacturing value chain.
It defines the concepts of blank detail specification (BDS), detail specification (DS) and key control characteristic (KCC). Furthermore, it provides guidelines how to develop and use product specifications, particularly the IEC 62565 series, in the field of nanotechnology.
This document also provides guidelines regarding the certification and reliability aspects for products specified by a DS and associated KCCs.
NOTE 1 The IEC 62565 series uses an open generic structure that can be flexibly adapted to technical developments. The double indexing of the individual parts allows grouping into technology areas without restriction due to an overly strict hierarchical structure.
NOTE 2 Key elements of the IEC 62565 series are a consensus-based set of key control characteristics (KCCs) with clear definitions and standardized measurement procedures to measure them.

IEC TS 62607-5-4:2022 specifies the measuring method of the band gap energy of a nanomaterial using electron energy loss data of transmission electron microscope.
The method specified in this document is applicable to semiconducting and insulating nanomaterials to estimate the band gap.
The measurement to get reliable data is performed under the consistent conditions of TEM observation and specimen thickness. The applicable measurement range of band gap energy is more than 2 eV.

IEC TS 62607-8-1:2020 There are two types of thermally stimulated current (TSC) measurement methods, classified by the origin of the current. One is generated by the detrapping of charges. The other one is generated by depolarization. IEC TS 62607-8-1:2020 focuses on the former method, and specifies the measurement method to be developed for determining defect states of nano-enabled metal-oxide interfacial devices.
IEC TS 62607-8-1:2020 includes:
– outlines of the experimental procedures used to measure TSC,
– methods of interpretation of results and discussion of data analysis, and
– case studies.

IEC TS 62607-4-2:2016(E), which is a Technical Specification, provides a standardized method for the determination of the density of cathode nanomaterials in powder form used for electrical energy storage devices. This method provides users with a key control characteristic to decide whether or not a cathode nanomaterial is usable, or suitable for their application. This document includes definitions of terminology used in this document, recommendations for sample preparation, outlines of the experimental procedures used to measure cathode nanomaterial properties, methods of interpretation of results and discussion of data analysis, case studies, and references.

IEC/IEEE 62659:2015(E) provides a framework for introducing nanoelectronics into large scale, high volume production in semiconductor manufacturing facilities through the incorporation of nanomaterials (e.g. carbon nanotubes, graphene, quantum dots, etc.). Since semiconductor manufacturing facilities need to incorporate practices that maintain high yields, there are very strict requirements for how manufacturing is performed. Nanomaterials represent a potential contaminant in semiconductor manufacturing facilities and need to be introduced in a structured and methodical way.

IEC 62607-3-1:2014 describes the procedures to be followed and precautions to be observed when performing reproducible measurements of the quantum efficiency of luminescent nanomaterials. Luminescent nanomaterials covered by this method include nano-objects such as quantum dots, nanophosphors, nanoparticles, nanofibers, nanocrystals, nanoplates, and structures containing these materials. The nanomaterials may be dispersed in either a liquid state (e.g., colloidal dispersion of quantum dots) or solid-state (e.g., nanofibers containing luminescent nanoparticles). This standard covers both relative measurements of liquid state luminescent nanomaterials and absolute measurements of both solid and liquid state nanomaterials. Key words: nanotechnology, nano, naloleds

IEC/PAS 62565-2-1:2011(E) establishes a blank detail specification for the essential electrical properties and certain other common characteristics including dimensional, structural and mechanical properties of single-wall carbon nanotubes. It provides a standardized format for detail specifications characterising essential basic properties of single-wall nanotubes and recommends measurement methods. Single-wall carbon nanotubes with a chemical modification, dispersed into a solvent or grown on a substrate are included. A PAS is a technical specification not fulfilling the requirements for a standard, but made available to the public. Following publication of this PAS, which is a pre-standard publication, the technical committee concerned may transform it into an International Standard.