IEC TS 62607-6-23:2025

IEC TS 62607-6-23 ®
Edition 1.0 2025-11
TECHNICAL
SPECIFICATION
Nanomanufacturing - Key control characteristics -
Part 6-23: Graphene-related products - Sheet resistance, carrier density, carrier
mobility: Hall bar method
ICS 07.120  ISBN 978-2-8327-0771-5

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CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 General terms . 6
3.2 Key control characteristics measured according to this document . 7
3.3 Terms related to the measurement method . 7
4 General . 7
4.1 Measurement principle . 7
4.2 Sample preparation method . 8
4.2.1 Preparation of substrate . 8
4.2.2 Transfer of samples . 8
4.2.3 Fabrication of devices . 9
4.3 Description of measurement equipment / apparatus . 11
4.3.1 Heating stage . 11
4.3.2 Mask alignment device . 11
4.3.3 Geometric size measuring equipment . 11
4.3.4 Electrode deposition equipment . 11
4.3.5 Magnet . 11
4.3.6 Electrical equipment . 11
4.3.7 Sample holder . 12
4.3.8 Oxygen plasma etching equipment . 12
4.4 Reagents . 12
4.5 Calibration standards . 12
4.6 Ambient conditions during measurement . 12
5 Measurement procedure . 12
5.1 Calibration of measurement equipment . 12
5.2 Detailed description of the measurement procedure . 12
5.2.1 Measurement process . 12
5.3 Measurement accuracy . 13
5.3.1 Sources of uncertainty . 13
5.3.2 Methods to reduce uncertainty . 14
6 Data analysis / interpretation of results . 14
7 Results to be reported . 16
7.1 Cover sheet . 16
7.2 Product / sample identification . 16
7.3 Measurement conditions . 17
7.4 Measurement specific information . 17
7.5 Measurement results. 17
Annex A (informative) Sheet resistance and carrier mobility of graphene film sample
#1 grown by CVD . 18
Annex B (informative) Sheet resistance and carrier mobility of graphene film sample
#2 grown by CVD . 19
Bibliography . 20

Figure 1 – Measurement diagram of graphene Hall device for sheet resistance and
carrier mobility . 8
Figure 2 – Fabrication process I of devices . 9
Figure 3 – Fabrication process II of devices . 10
Figure 4 – Graphene Hall measurement system . 13
Figure A.1 – Sheet resistance of graphene film sample #1 grown by CVD method . 18
Figure A.2 – Carrier Hall mobility of graphene film sample #1 grown by CVD method . 18
Figure B.1 – Sheet resistance of graphene film sample #2 grown by CVD method . 19
Figure B.2 – Carrier Hall mobility of graphene film sample #2 grown by CVD method . 19

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Nanomanufacturing -
Key control characteristics -
Part 6-23: Graphene-related products - Sheet resistance, carrier density,
carrier mobility: Hall bar method

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
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9) IEC draws attention to the possibility that the implementation of this document may involve the use of (a)
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shall not be held responsible for identifying any or all such patent rights.
IEC TS 62607-6-23 has been prepared by IEC technical committee 113: Nanotechnology for
electrotechnical products and systems. It is a Technical Specification.
The text of this Technical Specification is based on the following documents:
Draft Report on voting
113/911/DTS 113/930/RVDTS
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this Technical Specification is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 62607 series, published under the general title Nanomanufacturing
– Key control characteristics, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
– reconfirmed,
– withdrawn, or
– revised.
INTRODUCTION
Graphene films are widely used in the fields of electronic devices, e.g. display, communication
and wearable devices. Different applications have different requirements on carrier mobility and
sheet resistance of graphene films, which determines the performance of graphene films.
Carrier mobility and sheet resistance are the key control characteristics for quality control and
product development of graphene films. However, there are large differences in carrier mobility
extracted from devices in different structures even made from the same thin films. The sheet
resistance varies by two or three orders of magnitude from the touch screen to the solar cell.
At the same time, there is no unified test standard for device shape, electrode type, electrode
contact method and measurement method.
As there is no widely accepted standard for the methods to measure devices, the measurement
results cannot be compared and the quality of graphene films cannot be comprehensively
evaluated. Therefore, there is an urgent need to draft a standard for the measurement of carrier
mobility and sheet resistance in graphene thin films.
The document is developed to complete the fabrication and measurement of devices using cost-
effective processes and equipment. Due to the high cost and low cost-performance ratio of
photolithography processes and equipment, this document does not utilize photolithography
processes and equipment.
This method, based on the Hall effect, is recommended for graphene thin film Hall devices with
a carrier mobility of less than 10 000 cm /Vs. Currently, the applications of graphene mainly
include transparent conductive films and flexible electrodes. Preliminary studies have shown
that the mobility of graphene transparent conductive films and flexible electrodes at room
2 1
temperature is below 10 000 cm /Vs [1] to [6] , which is mentioned here merely for illustrative
purposes.
___________
Numbers in square brackets refer to the Bibliography.
1 Scope
This part of IEC 62607 establishes a standardized method to determine the key control
characteristic (KCC)
– carrier mobility and sheet resistance
for graphene thin films by
– Hall measurement.
The carrier mobility is derived by the product of the Hall coefficient and the electric conductivity
and the sheet resistance is derived by the product of the longitudinal resistance and the aspect
ratio of a Hall device.
– The method is applicable for graphene thin film Hall devices with length and width greater
than 100 micrometers.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
– IEC Electropedia: available at https://www.electropedia.org/
– ISO Online browsing platform: available at https://www.iso.org/obp
3.1 General terms
3.1.1
resistivity
resistance per unit length of a material of cross-sectional area
Note 1 to entry: Resistivity is given by Formula (1):
A
ρ=R× (1)
l
where
A is the cross-sectional area of the conductor;
l is the length of the conductor.
The unit of electrical resistivity is the ohm·metre (Ω·m).
[SOURCE: ISO 22553-7:2020, 3.2]
3.1.2
aspect ratio
ratio of the sheet length to the sheet width
[SOURCE: ISO 8336:2017, 3.13]
3.1.3
longitudinal resistance
ratio of the potential difference of a Hall device along the applied current to the magnitude of
the current
3.2 Key control characteristics measured according to this document
3.2.1
carrier mobility
product of the Hall coefficient and the electric conductivity
3.2.2
sheet resistance
product of the longitudinal resistance and the aspect ratio of a Hall device
3.3 Terms related to the measurement method
3.3.1
Hall effect
production in a conductor or in a semiconductor of an electric field strength proportional to the
vector product of the current density and the magnetic flux density
3.3.2
Hall electric field
transverse electric field established on both sides of sample when a perpendicular magnetic
field is added to the sample sourced with a current
3.3.3
Hall coefficient
ratio of Hall electric field to current density and magnetic flux density
4 General
4.1 Measurement principle
When charge carriers (such as electrons in Figure 1) move through the graphene film, they are
deflected in a magnetic field due to the influence of the Hall effect. This deflection causes
charges to accumulate at one side of the channel, and creates a potential difference between
the sides of the channel at the same time. The potential difference builds up a transverse
electrical fiel
...