IEC 60749-12:2017

IEC 60749-12 ®
Edition 2.0 2017-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 12: Vibration, variable frequency

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 12: Vibrations, fréquences variables
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IEC 60749-12 ®
Edition 2.0 2017-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 12: Vibration, variable frequency

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 12: Vibrations, fréquences variables

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-5156-0

– 2 – IEC 60749-12:2017 © IEC 2017
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
5 Test method . 5
6 Examination and test measurements . 6
7 Failure criteria . 6
8 Summary . 6
Bibliography . 7

Table 1 – Test conditions . 6

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES – MECHANICAL
AND CLIMATIC TEST METHODS –
Part 12: Vibration, variable frequency

FOREWORD
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International Standard IEC 60749-12 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2002. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) alignment with MIL-STD-883J Method 2007, Vibration, variable frequency.
The text of this International Standard is based on the following documents:
CDV Report on voting
47/2386/CDV 47/2434/RVC
– 4 – IEC 60749-12:2017 © IEC 2017

Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES – MECHANICAL
AND CLIMATIC TEST METHODS –
Part 12: Vibration, variable frequency

1 Scope
This part of IEC 60749 describes a test to determine the effect of variable frequency vibration,
within the specified frequency range, on internal structural elements. This is a destructive test.
It is normally applicable to cavity-type packages.
NOTE This test method describes a swept sine test. A random vibration test is described in JEDEC document
JESD 22-B103.
2 Normative references
There are no normative references in this document.
3 Terms and definitions
No terms and definitions are listed in this document.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
4 Test apparatus
The apparatus for this test shall include equipment capable of providing the required variable
frequency vibration at the specified level and the necessary optical and electrical equipment
for post-test measurements.
5 Test method
The device shall be rigidly fastened on the vibration platform and the leads or cables
adequately secured to avoid excessive lead resonance. The device shall be vibrated with
simple harmonic motion having either a peak to peak amplitude of 1,5 mm (±10 %) or a peak
acceleration of the specified test condition A, B, or C in Table 1, below.
Unless required by the relevant specification, the test conditions detailed in Table 1 below
shall be applied. Test conditions shall be amplitude controlled below the crossover frequency
and acceleration level controlled above. The vibration fr
...