IEC 60747-9:2007

IEC 60747-9
Edition 2.0 2007-09
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 9: Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 9: Transistors bipolaires à grille isolée (IGBT)

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IEC 60747-9
Edition 2.0 2007-09
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 9: Insulated-gate bipolar transistors (IGBTs)

Dispositifs à semiconducteurs – Dispositifs discrets –
Partie 9: Transistors bipolaires à grille isolée (IGBT)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
XA
CODE PRIX
ICS 31.080.01; 31.080.30 ISBN 2-8318-9321-6

– 2 – 60747-9 © IEC:2007
CONTENTS
FOREWORD.5

1 Scope.7

2 Normative references .7

3 Terms and definitions .7

3.1 Graphical symbol of IGBT.7

3.2 General terms .8

3.3 Terms related to ratings and characteristics; voltages and currents.8
3.4 Terms related to ratings and characteristics; other characteristics.10
4 Letter symbols.12
4.1 General .12
4.2 Additional general subscripts.12
4.3 List of letter symbols .13
5 Essential ratings and characteristics.14
5.1 Ratings (limiting values) .14
5.2 Characteristics .15
6 Measuring methods .17
6.1 General .17
6.2 Verification of ratings (limiting values) .17
6.3 Methods of measurement .26
7 Acceptance and reliability.45
7.1 General requirements.45
7.2 Specific requirements.45
7.3 Type tests and routine tests .48

Annex A (normative) Measuring method for collector-emitter breakdown voltage .50
Annex B (normative) Measuring method for inductive load turn-off current under
specified conditions .52
Annex C (normative) Forward biased safe operating area (FBSOA) .54
Annex D (normative) Case non-rupture .58

Bibliography.59

Figure 1 – Circuit for measuring the collector-emitter voltages V , V , V .18
CES CER CEX
Figure 2 – Circuit for testing the gate-emitter voltage ±V .19
GES
Figure 3 – Circuit for measuring collector current.20
Figure 4 – Circuit for measuring peak collector current .21
Figure 5 – Test circuit of reverse safe operating area (RBSOA) .22
Figure 6 – Waveforms of gate-emitter voltage V and collector current I during
GE C
turn-off.22
Figure 7 – Circuit for testing safe operating pulse width at load short circuit (SCSOA1) .23
Figure 8 – Waveforms of gate-emitter voltage V , collector current I and voltage
GE C
V during load short-circuit condition SCSOA1 .24
CE
Figure 9 – Short-circuit safe operating area 2 (SCSOA2) .25

60747-9 © IEC:2007 – 3 –
Figure 10 – Waveforms during SCSOA2 .25

Figure 11 – Circuit for measuring the collector-emitter sustaining voltage V .26

CE*sus
Figure 12 – Operating locus of the collector current .27

Figure 13 – Circuit for measuring the collector-emitter saturation voltage V .28
CEsat
Figure 14 – Basic circuit for measuring the gate-emitter threshold voltage .29

Figure 15 – Circuit for measuring the collector cut-off current .30

Figure 16 – Circuit for measuring the gate leakage current .31

Figure 17 – Circuit for measuring the input capacitance.32

Figure 18 – Circuit for measuring the output capacitance.33
Figure 19 – Circuit for measuring the reverse transfer capacitance .34
Figure 20 – Circuit for measuring the gate charge.35
Figure 21 – Basic gate charge waveform .35
Figure 22 – Circuit for measuring the short-circuit internal gate resistance.36
Figure 23 – Circuit for measuring turn-on times and energy .37
Figure 24 – Waveforms during turn-on times.38
Figure 25 – Circuit for measuring turn-off times and energy .39
Figure 26 – Waveforms during turn-off times.39
Figure 27 – Circuit for measuring the variation with temperature of the collector-
emitter voltage V at a low measuring current I and for heating up the IGBT by a
CE C1
high current I .41
C2
Figure 28 – Typical variation of the collector-emitter voltage V at a low measuring
CE
current I with the case temperature T (when heated from outside, i.e. T = T ) .42
C1 c c vj
Figure 29 – Circuit for measuring thermal resistance and transient thermal impedance:
method 2 .43
Figure 30 – Typical variation of the gate-emitter threshold voltage V at a low
GE(th)
measuring current I with the case temperature T (when heated from the outside, i.e.
C2 c
T = T ) .44
c vj
Figure 31 – I , V and T with time .45
C GE c
Figure 32 – Circuit for high-temperature blockings .46
Figure 33 – Circuit for high-temperature gate bias .47
Figure 34 – Circuit for intermittent operating life .47
Figure 35 – Expected number of cycles versus temperature rise ΔT .48
vj
Figure A.1 – Circuit for testing the collector-emitter breakdown voltage .50

Figure B.1 – Measuring circuit for inductive load turn-off current.52
Figure B.2 – Waveforms of collector current I and collector voltage V during turn-off .52
C CE
Figure C.1 – Test circuit of forward biased safe operating area (method 1) .54
Figure C.2 – Typical ΔV versus collector-emitter voltage V characteristics.55
CE CE
Figure C.3 – Typical forward biased safe operating area.55
Figure C.4 – Circuit testing forward biased safe operating area (method 2).56
Figure C.5 – Latching mode operation waveforms.57
Figure C.6 – Latching mode I-V characteristic.57

– 4 – 60747-9
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