IEC 60191-6-19:2010
(Main)Mechanical standardization of semiconductor devices - Part 6-19: Measurement methods of the package warpage at elevated temperature and the maximum permissible warpage
Mechanical standardization of semiconductor devices - Part 6-19: Measurement methods of the package warpage at elevated temperature and the maximum permissible warpage
IEC 60191-6-19:2010 specifies measurement methods of the package warpage at elevated temperature and the maximum permissible warpages for Ball Grid Array(BGA), Fine-pitch Ball Grid Array (FBGA), and Fine-pitch Land Grid Array (FLGA). This standard cancels and replaces IEC/PAS 60191-6-19 published in 2008. This first edition constitutes a technical revision.
Normalisation mécanique des dispositifs à semiconducteurs - Partie 6-19: Méthodes de mesure du gauchissement des boîtiers à température élevée et du gauchissement maximum admissible
La CEI 60191-6-19:2010 couvre les exigences relatives aux méthodes de mesure du gauchissement des boîtiers à température élevée et du gauchissement maximum admissible pour les boîtiers BGA, FBGA et FLGA. La présente norme annule et remplace l'IEC/PAS 60191-6-19 publié en 2008. Cette première édition constitue une révision technique.
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IEC 60191-6-19 ®
Edition 1.0 2010-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Mechanical standardization of semiconductor devices –
Part 6-19: Measurement methods of the package warpage at elevated
temperature and the maximum permissible warpage
Normalisation mécanique des dispositifs à semiconducteurs –
Partie 6-19: Méthodes de mesure du gauchissement des boîtiers à température
élevée et du gauchissement maximum admissible
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IEC 60191-6-19 ®
Edition 1.0 2010-02
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Mechanical standardization of semiconductor devices –
Part 6-19: Measurement methods of the package warpage at elevated
temperature and the maximum permissible warpage
Normalisation mécanique des dispositifs à semiconducteurs –
Partie 6-19: Méthodes de mesure du gauchissement des boîtiers à température
élevée et du gauchissement maximum admissible
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
M
CODE PRIX
ICS 31.080.01 ISBN 978-2-88910-066-8
– 2 – 60191-6-19 © IEC:2010
CONTENTS
FOREWORD.3
1 Scope.5
2 Normative references .5
3 Terms and definitions .5
4 Sample.9
4.1 Sample size .9
4.2 Solder ball removal .9
4.3 Pretreatment conditions.9
4.4 Maximum time after pretreatment until measurement.9
4.5 Repetition of the reflow cycles for the sample.9
5 Measurement .9
5.1 General description .9
5.2 Temperature profile and the temperatures for measurements .9
5.3 Measurement method.10
5.3.1 Shadow moiré method .10
5.3.2 Laser reflection method .10
5.3.3 Data analysis (Data table, Diagonal scan graph, 3D plot graph).11
6 Maximum permissible package warpage at elevated temperature .11
7 Recommended datasheet for the package warpage.11
7.1 Measurement temperatures for data sheet .11
7.2 Datasheet.11
7.3 Example of datasheets .12
Figure 1 – Measuring area of BGA and FBGA in full grid layout .6
Figure 2 – Measuring area of BGA and FBGA perimeter layout with 4 rows and 4
columns .6
Figure 3 – Measuring area of FLGA perimeter layout with 4 rows and 4 columns .7
Figure 4 – Calculation of the sign of package warpage .8
Figure 5 – Package warpage .8
Figure 6 – Thermocouple placement .10
Figure 7 – Temperature dependency of the package warpage .12
Figure 8 – Recommended datasheet.13
Table 1 – Maximum permissible package warpages for BGA and FBGA.11
Table 2 – Maximum permissible package warpages for FLGA.11
60191-6-19 © IEC:2010 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
MECHANICAL STANDARDIZATION OF SEMICONDUCTOR DEVICES –
Part 6-19: Measurement methods of the package warpage
at elevated temperature and the maximum permissible warpage
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
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patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60191-6-19 has been prepared by subcommittee 47D: Mechanical
standardization for semiconductor devices, of IEC technical committee 47: Semiconductor
devices.
This standard cancels and replaces IEC/PAS 60191-6-19 published in 2008. This first edition
constitutes a technical revision.
The text of this standard is based on the following documents:
FDIS Report on voting
47D/757/FDIS 47D/764/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
– 4 – 60191-6-19 © IEC:2010
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all the parts in the IEC 60191 series, under the general title Mechanical
standardization of semiconductor devices, can be found on the IEC website.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
60191-6-19 © IEC:2010 – 5 –
MECHANICAL STANDARDIZATION OF SEMICONDUCTOR DEVICES –
Part 6-19: Measurement methods of the package warpage
at elevated temperature and the maximum permissible warpage
1 Scope
This part of IEC 60191 specifies measurement methods of the package warpage at elevated
temperature and the maximum permissible warpages for Ball Grid Array(BGA), Fine-pitch Ball
Grid Array (FBGA), and Fine-pitch Land Grid Array (FLGA).
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document applies.
IEC 60191-6-2, Mechanical standardization of semiconductor devices – Part 6-2: General
rules for the preparation of outline drawings of surface mounted semiconductor device
packages – Design guide for 1,50 mm, 1,27 mm and 1,00 mm pitch ball and column terminal
packages
IEC 60191-6-5, Mechanical standardization of semiconductor devices – Part 6-5: General
rules for the preparation of outline drawings of surface mounted semiconductor device
packages – Design guide for fine-pitch ball grid array (FBGA)
IEC 60749-20, Semiconductor devices – Mechanical and climatic test methods – Part 20:
Resistance of plastic-encapsulated SMDs to the combined effect of moisture and soldering
heat
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
measuring area
area for measurement of package warpage, composed of either
• terminal-existing area bordered by the lines connecting the centres of the outermost
neighbouring solder balls for the packages with the standoff height more than 0,1 mm,
including BGA and FBGA
NOTE Examples of measurement area is shown in Figure 1 and Figure 2. If there are balls at the
package centre, their area is also considered as a part of measuring areas.
• substrate surface except certain edge margin for the packages with the standoff height
of 0,1 mm or less, including FLGA
NOTE Examples of measurement area is shown in Figure 3. The width of this margin L depends on the
capability of each measuring instrument (L = 0,2 mm recommended).
———————
hereinafter referred as "FBGA design guide".
– 6 – 60191-6-19 © IEC:2010
(M – 1) × e
E
e
M
D
C
B
A
12 3
M
E
IEC 108/10
NOTE 1) The hatched area indicates the measuring area.
2) Symbols in this figure are specified to FBGA design guide (IEC 60191-6-5).
Figure 1 – Measuring area of BGA and FBGA in full grid layout
(M – 1) × e
E
(M – 7) × e
E
e
M
D
C
B
A
M
1 2 3 E
IEC 109/10
NOTE Symbols in this figure are specified to FBGA design guide (IEC 60191-6-5).
Figure 2 – Measuring area of BGA and FBGA perimeter layout
with 4 rows and 4 columns
e e
(M – 7) × e
D
(M – 1) × e
D
(M – 1) × e
D
60191-6-19 © IEC:2010 – 7 –
L
IEC 110/10
NOTE The edge margin L indicates the exempt area from measurement to avoid measurement noise depending
on the instrument capability. Recommended edge margin L = 0,2 mm.
Figure 3 – Measuring area of FLGA perimeter layout with 4 rows and 4 columns
3.2
convex warpage
arched top surface (not interconnect side) of package being mounted on PWB, wherein the
sign of the convex warpage is defined as plus
3.3
concave warpage
inward-curving top surface (not interconnect side) of package being mounted on PWB,
wherein the sign of the concave warpage is defined as minus
3.4
package warpage sign
plus or minus sign of package warpage determined by the sign of the sum of the largest
positive displacement and the largest negative displacement of the package profile on both
measurement area diagonals, which are regarded as base lines connecting the outermost
opposite corners of the measuring area, thus resulting to be the sign of
(AB +AB +CD +CD )
MAX MIN MAX MIN
where
AB is the largest positive displacement;
MAX
AB is the largest negative displacement of the package profile on the diagonal AB;
MIN
CD is the largest positive displacement; and
MAX
CD is the largest negative displacement of the package profile on the diagonal CD.
MIN
NOTE In Figure 4, the signs of AB AB CD and CD are plus, zero, plus and minus, respectively.
MAX, MIN, MAX MIN
The concave or convex impression of the package warpage can differ from the above defined sign, in critical case.
– 8 – 60191-6-19 © IEC:2010
D
Measuring area
CD
MAX
CD
MIN
Package
Measuring
area
A
B
Depopulated
area
Package warpage
profile
C
Measuring
area
AB
MAX
Base line
AB = 0
MIN
Measuring Measuring
area area
IEC 111/10
Figure 4 – Calculation of the sign of package warpage
3.5
package warpage
difference of the largest positive and the largest negative displacements of the package
warpage in the measuring area with respect to the reference plane, preceded by package
warpage sign, where reference plane is derived using the least square method with the
measuring area data
NOTE For example, the absolute value of the package warpage ⏐C⏐ is obtained by the sum of the absolute value
of the largest positive displacement ⏐A⏐ and that of the largest negative displacement ⏐B⏐. This is in respect to
the reference plane which is derived by using the least square method, as shown in Figure 5. Package warpage
sign precedes ⏐C⏐.
⏐C⏐= ⏐A⏐ + ⏐B⏐
Concave
Convex
A
A
B
B
Reference Reference
Measuring area Measuring area
plane plane
IEC 112/10 IEC 113/10
Figure 5 – Package warpage
60191-6-19 © IEC:2010 – 9 –
4 Sample
4.1 Sample size
At least three samples are required for each measurement condition.
4.2 Solder ball removal
If the measurement method of the package warpage requires the elimination of the solder
balls from a package, it is recommended to use mechanical removal rather than hot reflow. If
the samples are prepared without solder balls for the convenience of the measurement, the
package shall be subjected to the thermal history of the solder ball attachment process.
4.3 Pretreatment conditions
The bake and moisture soak conditions shall conform to the moisture sensitivity level
specified in IEC 60749-20. The peak temperature of the package warpage measurement shall
meet the specification of the product.
4.4 Maximum time after pretreatment until measurement
It is recommended to measure the warpage no longer than 5 h after the pretreatment.
4.5 Repetition of the reflow cycles for the sample
The same sample shall not be subjected to the repetition of the reflow cycles. The sample can
only be subjected to more than one cycle of reflow for remeasurement, if reproducibility of test
data was evaluated prior to the test.
5 Measurement
5.1 General description
The package warpage is measured by “shadow moiré method” or “laser reflection method”.
Samples are subjected to heating and cooling while measuring the package warpage at the
temperatures specified in 5.2. The measurement points shall not be on the crown of solder
balls but on the substrate surface of the package. Only when the behaviour of the top surface
of the package (mostly marking surface) is verified to coincide with that of the substrate
surface, the measurement on the top surface is allowed.
5.2 Temperature profile and the temperatures for measurements
5.2.1 The temperature profile for the warpage measurement does not necessarily simulate
that for production. Higher priorities are placed on
– maintaining the temperature constant during the measurement,
– never exposing the samples more than necessary duration at high temperature. Samples
shall be proceeded to the next measurement as soon as possible,
– avoiding a temperature surge to prevent the overshoot, and
– minimizing the temperature difference between the top and bottom surfaces.
5.2.2 The temperatures for measurements are
– room temperature,
– melting point,
– peak temperature,
– 10 – 60191-6-19 © IEC:2010
– solidification point, and
– room temperature after cool down.
The melting point and the solidification point are 220 °C for Sn-3,0Ag-0,5Cu solder as a
reference. Other solder composites may take different temperatures. The peak temperature
basically conforms to the package classifications specified in IEC 60749-20, but to be exact, it
shall follow the supplier’s recommended max temperature.
5.2.3 It is recommended that a thermocouple of gauge 30 (φ0,25 mm) or flat tip type be used.
5.2.4 The thermocouple is attached on the center of the package body using either thermally
conductive epoxy or heat-resistant polyimide tape. When polyimide tape is used, thermally
conductive sheet shall be applied between the thermocouple bead and the package surface to
enhance thermal conductivity as a thermal interface material.
5.2.5 When a measuring instrument is being set up, the temperature of the molded side of
the package facing a heater is also measured. The temperature difference from the substrate
surface shall preferably be less than 10 °C by adjusting the heating mechanism and the
temperature profile.
Thermocouple on the substrate
side for temperature profile control
(warpage measurement side)
Package
Thermocouple on the molded side
for temporary measurement of
the temperature
Heater side
IEC 114/10
Figure 6 – Thermocouple placement
5.3 Measurement method
5.3.1 Shadow moiré method
Solder balls shall be removed prior to the measurement on the substrate surface.
Measurements are conducted by placing the grating [low coefficient of thermal expansion
(CTE) glass with transparent and opaque stripes] parallel to the sample. Then, the projection
of light beam at an angle of approximately 45 ° through the grating produces the stripe pattern
on the sample. Observation of the stripe pattern through the grating results in the moiré fringe
pattern (geometric interference pattern). Image processing and the analysis of the patterns
provide the displacement from planarity over the substrate surface. The instrument is capable
of setting the measuring area and measuring the warpage at elevated temperatures including
the peak temperature.
5.3.2 Laser reflection method
Solder balls shall be removed when the solder ball pitch is not large enough for laser beam to
measure the warpage on the substrate surface. Samples are placed on the measurement
table. The displacement from the flatness is measured by the laser displacement sensor. The
warpage is generally measured by scanning the laser beam over the terminal lands or
between balls throughout the measuring area. The grid pitch of the measurement points is
preferably less than the solder ball pitch. The instrument is capable of setting the measuring
area and measuring the warpage at elevated temperatures including the peak temperature.
60191-6-19 © IEC:2010 – 11 –
5.3.3 Data analysis (data table, diagonal scan graph, 3D plot graph)
The magnitude of the warpage is obtained from the data table of the measurements or 3D plot
graph (warpage distribution diagram over the measuring area). Then the sign of the warpage
(warpage direction) is determined from the diagonal scan graph and precedes the value.
6 Maximum permissible package warpage at elevated temperature
Table 1 shows the maximum permissible package warpages (absolute values) for BGA
specified in IEC 60191-6-2 and FBGA specified in IEC60191-6-5. Standoff heights A1 are
quoted from these standards.
Table 2 shows the maximum permissible package warpages (absolute values) for FLGA.
Table 1 – Maximum permissible package warpages for BGA and FBGA
Unit: mm
Solder ball pitch (e) 0,4 0,5 0,65 0,8 1,0 1,27
Standoff height (A1) 0,20 0,25 0,33 0,40 0,50 0,60
Maximum permissible package warpage
0,10 0,11 0,14 0,17 0,22 0,25
(absolute value)
Table 2 – Maximum permissible package warpages for FLGA
Unit: mm
Land pitch (e) 0,4 0,5 0,65 0,8
Condition of thickness of molten solder paste 0,08 0,10 0,11 0,13
Maximum permissible package warpage 0,08 0,10 0,11 0,13
(Absolute value)
7 Recommended datasheet for the package warpage
7.1 Measurement temperatures for data sheet
Typical measurement temperatures for datasheet are room temperature, melting point, peak
temperature, solidification point, and room temperature after cooling.
7.2 Datasheet
Datasheet is composed of
– temperature dependency of the package warpage (see Figure 7),
– surface topography at each temperature in 3D plots (optional). (If the sign of warpage is
opposite, explanation is required; see Figure 8.),
– diagonal profile of the package at each temperature (optional). (If the sign of warpage is
opposite, explanation is required; see Figure 8.),
...








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