IEC 60747-14-11:2021
(Main)Semiconductor devices - Part 14-11: Semiconductor sensors - Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
Semiconductor devices - Part 14-11: Semiconductor sensors - Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature
IEC 60747-14-11:2021(E) defines the terms, definitions, configuration, and test methods can be used to evaluate and determine the performance characteristics of surface acoustic wave-based semiconductor sensors integrated with ultraviolet, illuminance, and temperature sensors. The measurement methods are for DC characteristics and RF characteristics, and the measurement method for RF characteristics includes a direct mode and differential amplifier mode based on feedback oscillation. This document excludes devices dealt with by TC 49: piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection.
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IEC 60747-14-11 ®
Edition 1.0 2021-03
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices –
Part 14-11: Semiconductor sensors – Test method of surface acoustic
wave-based integrated sensors for measuring ultraviolet, illumination and
temperature
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IEC 60747-14-11 ®
Edition 1.0 2021-03
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices –
Part 14-11: Semiconductor sensors – Test method of surface acoustic
wave-based integrated sensors for measuring ultraviolet, illumination and
temperature
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.01 ISBN 978-2-8322-9465-9
– 2 – IEC 60747-14-11:2021 © IEC 2021
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 General terms . 6
3.2 SAW-based integrated light sensors . 7
3.3 Characteristics parameters . 7
4 Device structure and characteristics . 8
4.1 General . 8
4.2 Device structure . 8
4.2.1 SAW based resonator type light-sensor elements . 8
4.2.2 SAW-based delay line type light sensor elements . 9
4.3 Characteristics of integrated UV and visible-light sensors . 9
4.4 Key points of integrated UV and visible-light sensors . 10
4.4.1 UV sensitive layer . 10
4.4.2 Visible-light sensitive layer . 10
5 Test conditions . 10
5.1 Test environmental conditions . 10
5.2 Darkroom condition . 11
5.3 Setup conditions . 11
5.3.1 Starting conditions of test . 11
5.3.2 Conditions of UV and visible light measurement equipment . 11
6 Test methods . 11
6.1 General . 11
6.2 Test methods of DC-characteristics for the light sensor element . 12
6.3 Test methods of RF characteristics for integrated light sensors . 14
6.3.1 Direct mode . 14
6.3.2 Differential amplifier mode . 14
Annex A (informative) Ultraviolet and visible light characteristics of the sensitive layer . 18
Annex B (informative) Hysteresis of frequency shift according to the on/off state light
condition . 20
Bibliography . 21
Figure 1 – Configuration of an interdigital transducer (IDT) . 7
Figure 2 – Conceptual diagram for SAW based resonator type light sensor elements . 9
Figure 3 – Conceptual diagram for SAW based delay line type light sensor elements . 9
Figure 4 – Conceptual diagram for integrated multi UV and visible light sensors . 10
Figure 5 – Measurement procedure for the semiconductor light sensor . 12
Figure 6 – Test setup to measure the I-V characteristics of semiconductor light sensor . 13
Figure 7 – Example of I-V characteristics of a UV sensor element as a function of UV
intensity . 13
Figure 8 – Test setup to measure the frequency shift of semiconductor light sensor . 14
Figure 9 – Differential amplifier mode method . 16
Figure 10 – Measurement results of UV and visible light sensors using differential
amplifier mode . 17
Figure A.1 – Operation principle of the ZnO sensitive layer for UV sensing . 18
Figure A.2 – Operation principle in terms of band theory . 19
Figure B.1 – Hysteresis of the frequency shift under optimal light conditions . 20
– 4 – IEC 60747-14-11:2021 © IEC 2021
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 14-11: Semiconductor sensors – Test method of surface acoustic
wave-based integrated sensors for measuring ultraviolet,
illumination and temperature
FOREWORD
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rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-14-11 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
CDV Report on voting
47E/674/CDV 47E/709/RVC
Full information on the voting for the approval of this International Standard can be found in the
report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The "colour inside" logo on the cover page of this document indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.
– 6 – IEC 60747-14-11:2021 © IEC 2021
SEMICONDUCTOR DEVICES –
Part 14-11: Semiconductor sensors – Test method of surface acoustic
wave-based integrated sensors for measuring ultraviolet,
illumination and temperature
1 Scope
This part of IEC 60747 defines the terms, definitions, configuration, and test methods can be
used to evaluate and determine the performance characteristics of surface acoustic wave-
based semiconductor sensors integrated with ultraviolet, illuminance, and temperature sensors.
The measurement methods are for DC characteristics and RF characteristics, and the
measurement method for RF characteristics includes a direct mode and differential amplifier
mode based on feedback oscillation. This document excludes devices dealt with by TC 49:
piezoelectric, dielectric and electrostatic devices and associated materials for frequency control,
selection and detection.
2 Normative references
The following
...
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