IEC 62047-33:2019

IEC 62047-33 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –
Part 33: MEMS piezoresistive pressure-sensitive device

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IEC 62047-33 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
Semiconductor devices – Micro-electromechanical devices –

Part 33: MEMS piezoresistive pressure-sensitive device

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99; 31.140 ISBN 978-2-8322-6718-9

– 2 – IEC 62047-33:2019 © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 7
4 Essential ratings and characteristics . 8
4.1 Ratings (Limiting values) . 8
4.2 Recommended operating conditions . 8
4.3 Characteristics . 8
5 Test methods . 9
5.1 Input resistance . 9
5.2 Output resistance . 9
5.3 Leakage current . 9
5.3.1 P-N junction isolation type sensitive device . 9
5.3.2 Insulating medium type sensitive device . 10
5.4 Breakdown voltage . 10
5.5 Isolation voltage . 10
5.6 Static performances . 10
5.6.1 Test method . 10
5.6.2 Output under normal pressure . 12
5.6.3 Zero output . 12
5.6.4 Output symmetry . 13
5.6.5 Full-span output . 13
5.6.6 Nonlinearity . 13
5.6.7 Pressure hysteresis . 13
5.6.8 Repeatability . 14
5.6.9 Accuracy . 15
5.6.10 Sensitivity . 15
5.6.11 Zero drift. 15
5.7 Stability. 16
5.7.1 Test method . 16
5.7.2 Zero long-term stability . 16
5.7.3 Sensitivity long-term stability . 16
5.8 Temperature influence . 16
5.8.1 Test method . 16
5.8.2 Thermal zero drift . 17
5.8.3 Thermal sensitivity drift . 17
5.8.4 Thermal zero output hysteresis . 17
5.8.5 Thermal sensitivity hysteresis . 17
5.8.6 Temperature hysteresis . 18
5.9 Static pressure influence . 18
5.9.1 Two way static pressure . 18
5.9.2 Unidirectional static pressure . 19
5.10 Overload . 19
5.11 Dynamic performance . 19
5.11.1 Test method . 19
5.11.2 Frequency response . 20
5.11.3 Ringing frequency . 20

5.11.4 Damping ratio . 20
5.11.5 Rise time . 21
5.11.6 Resonant frequency . 21
5.11.7 Overshoot . 21
5.12 Environment test . 21
5.12.1 Storage at high temperature . 21
5.12.2 Storage at low temperature . 21
5.12.3 Temperature cycling . 22
5.12.4 Vibration . 22
5.12.5 Mechanical shock . 22
5.12.6 Acceleration . 22
5.12.7 Moisture resistance . 22
5.12.8 Mucedine . 22
5.12.9 Salt atmosphere . 22
5.12.10 Electromagnetic compatibility . 23
5.12.11 Low pressure . 23
5.12.12 High temperature electric life . 23
5.12.13 Fatigue life . 23
Bibliography . 24

Figure 1 – Structure schematic diagram of the device . 7
Figure 2 – Test connection graph for P-N junction isolation type sensitive device . 10
Figure 3 – Test connection graph for insulating medium type sensitive device . 10
Figure 4 – Test system . 11
Figure 5 – The output wave . 20

Table 1 – Characteristics of the device . 8

– 4 – IEC 62047-33:2019 © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 33: MEMS piezoresistive pressure-sensitive device

FOREWORD
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