CLC/TC 47X - Semiconductor devices and trusted chips

IEC 60749-7:2025 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace. Of particular interest is the measurement of the primary sealing gases (or lack thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium), oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 %), dissimilar concentration of internally sealed gases (e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon, helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria. Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and provide information about the long-term chemical stability of the atmosphere inside the device. The presence of leak test fluorocarbon vapour in the internal gas analysis (IGA) is an indication of failure to meet leak test requirements of IEC 60749‑8. This test is destructive. This edition includes the following significant technical changes with respect to the previous edition: a) This document has been re-written and rearranged to align with the text of MIL-STD-883, Method 1018.10. b) Additional detail has been provided in the calibration requirements.

IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024"). This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance. This test method allows for two distinct methods of pulling wires: a) One method incorporates the use of a hook that is placed under the wire and is then pulled. b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire. This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2. This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002. This edition includes the following significant technical changes with respect to the previous edition: a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2). This International Standard is to be used in conjunction with IEC 60749-22-2:2025.

IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion). This test is used to identify failure mechanisms internal to the package and is destructive. This edition includes the following significant technical changes with respect to the previous edition: a) rearrangement of clauses to reposition requirements; b) addition of two notes to the post-test electrical procedures.

IEC 60749-22-2:2025 establishes a means for determining the strength of a ball bond to a die or package bonding surface and can be performed on pre-encapsulation or post-encapsulation devices. This measure of bond strength is extremely important in determining two features: a) the integrity of the metallurgical bond which has been formed, and b) the quality of ball bonds to die or package bonding surfaces. This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to 76 µm (0,000 6" to 0,003"). This test method can only be used when the bonds are large enough to allow for proper contact with the shear test chisel and when there are no adjacent interfering structures that would hinder the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm (0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at the time of this revision. This test method can also be used on ball bonds that have had their wire removed and on to which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball" and "reverse bonding". See Annex A for additional information. The wire bond shear test is destructive. It is appropriate for use in process development, process control, or quality assurance, or both. This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown to be a consistent indicator of bond integrity. See Annex B for information on performing shear testing on wedge bonds. This test method does not include bond strength testing using wire bond pull testing. Wire bond pull testing is described in IEC 60749-22-1. This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first edition IEC 60749-22 published in 2002. This International Standard is to be used in conjunction with IEC 60749-22-1:2025. This edition includes the following significant technical changes with respect to the previous edition: a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749‑22‑1).

IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor. If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document. This test caused wear-out and is considered destructive.

IEC 63378-3:2025 specifies the thermal circuit network model of discrete (TO‑243, TO‑252 and TO‑263) packages, which is used in the transient analysis of electronic devices to estimate precise junction temperatures without experimental verification. This model is intended to be made and provided by semiconductor suppliers and to be used by assembly makers of electronic devices.

IEC 60747-15:2024 gives the requirements for isolated power semiconductor devices. These requirements are additional to those given in other parts of IEC 60747 for the corresponding non-isolated power devices and parts of IEC 60748 for ICs. This third edition includes the following significant technical changes with respect to the previous edition: a) The intelligent power semiconductor modules (IPM), which was previously excluded from the first and second edition, is now included in this document (Annex C); b) The thermal resistance is described for each switch (6.2.4); c) Added isolation test between temperature sensor and terminals, in case there is an agreement with the user (6.1.2).

IEC 60747-16-9:2024 specifies the terminology, essential ratings, and characteristics, and measuring methods of microwave integrated circuit phase shifters.

IEC 60749-5:2023 is available as IEC 60749-5:2023 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test; b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment; c) replacement of references to “virtual junction” with “die”.

IEC 61967-8:2023 is available as IEC 61967-8:2023 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 61967-8:2023 defines a method for measuring the electromagnetic radiated emission from an integrated circuit (IC) using an IC stripline. The IC being evaluated is mounted on an EMC test board (PCB) between the active conductor and the ground plane of the IC stripline arrangement. This edition includes the following significant technical changes with respect to the previous edition: a) frequency range of 150 kHz to 3 GHz was deleted from the scope; b) extension of upper usable frequency to 6 GHz or higher as long as the defined requirements are fulfilled.

This part of IEC 63287 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.

This part of IEC 63364-1 provides terms, test method, and report of sound variation detection system based on IoT. It provides the evaluation method for each part of the sound variation detection system based on IoT in the block diagram, the characterization parameters, symbols, test setups and the conditions. In addition, this document defines the configuration items and criteria of standard space and firing situation for the quality evaluation measurement of sound field variation detection system with IoT.

This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit attenuators.

This part of IEC 60747 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit limiters.

This document specifies test and measurement methods for EMC evaluation of Peripheral Sensor Interface 5 (PSI5) transceiver integrated circuits (ICs) under network condition. It defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards. It is applicable for PSI5 satellite ICs (e.g. sensors) and ICs with embedded PSI5 transceivers (e.g. PSI5 Electronic control unit IC). The document covers - the emission of RF disturbances, - the immunity against RF disturbances, - the immunity against impulses and - the immunity against electrostatic discharges (ESD).

IEC 60749-37:2022 is available as IEC 60749-37:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-37:2022 provides a test method that is intended to evaluate and compare drop performance of surface mount electronic components for handheld electronic product applications in an accelerated test environment, where excessive flexure of a circuit board causes product failure. The purpose is to standardize the test board and test methodology to provide a reproducible assessment of the drop test performance of surface-mounted components while producing the same failure modes normally observed during product level test. This edition includes the following significant technical changes with respect to the previous edition: - correction of a previous technical error concerning test conditions; - updates to reflect improvements in technology.

IEC 6074716-6:2019 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit frequency multipliers.

IEC 60749-10:2022 is intended to evaluate devices in the free state and assembled to printed wiring boards for use in electrical equipment. The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. The use of subassemblies is a means to test devices in usage conditions as assembled to printed wiring boards. Mechanical shock due to suddenly applied forces, or abrupt change in motion produced by handling, transportation or field operation can disturb operating characteristics, particularly if the shock pulses are repetitive. This is a destructive test intended for device qualification. This edition cancels and replaces the first edition published in 2002. This edition includes the following significant technical changes with respect to the previous edition:
covers both unattached components and components attached to printed wiring boards;
tolerance limits modified for peak acceleration and pulse duration;
mathematical formulae added for velocity change and equivalent drop height.

IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: - updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; - addition of a Bibliography, which includes ASTM standards relevant to this test method.

The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).

This part of IEC 62228 specifies test and measurement methods for the EMC evaluation of CXPI transceiver ICs under network condition. It defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards. This specification is applicable for standard CXPI transceiver ICs and ICs with embedded CXPI transceiver and covers - the emission of RF disturbances, - the immunity against RF disturbances, - the immunity against impulses and - the immunity against electrostatic discharges (ESD).

This part of IEC 62228 specifies test and measurement methods for EMC evaluation of CAN transceiver ICs under network condition. It defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards. It is applicable for CAN standard transceivers, CAN transceivers with partial networking functionality and CAN transceivers with flexible data rate capability and covers - the emission of RF disturbances, - the immunity against RF disturbances, - the immunity against impulses, and - the immunity against electrostatic discharges (ESD).

IEC 62433-1:2019(E) specifies the framework and methodology for EMC IC macro-modelling. Terms that are commonly used in IEC 62433 (all parts), different modelling approaches, requirements and data-exchange format for each model category that is standardized in this series are defined in this document. IEC 62433-1 cancels and replaces IEC TS 62433-1 published in 2011. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to IEC TS 62433 1:2011: Incorporation of a data exchange format for an integrated circuit’s model representation.

IEC 60749-28:2022 is available as IEC 60749-28:2022 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-28:2022 establishes the procedure for testing, evaluating, and classifying devices and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined field-induced charged device model (CDM) electrostatic discharge (ESD). All packaged semiconductor devices, thin film circuits, surface acoustic wave (SAW) devices, opto-electronic devices, hybrid integrated circuits (HICs), and multi-chip modules (MCMs) containing any of these devices are to be evaluated according to this document. To perform the tests, the devices are assembled into a package similar to that expected in the final application. This CDM document does not apply to socketed discharge model testers. This document describes the field-induced (FI) method. An alternative, the direct contact (DC) method, is described in Annex J. The purpose of this document is to establish a test method that will replicate CDM failures and provide reliable, repeatable CDM ESD test results from tester to tester, regardless of device type. Repeatable data will allow accurate classifications and comparisons of CDM ESD sensitivity levels. This edition includes the following significant technical changes with respect to the previous edition: - a new subclause and annex relating to the problems associated with CDM testing of integrated circuits and discrete semiconductors in very small packages; - changes to clarify cleaning of devices and testers.

In general, dynamic ON-resistance testing is a measure of charge trapping phenomena in GaN power transistors. This publication describes the guidelines for testing dynamic ON-resistance of GaN lateral power transistor solutions. The test methods can be applied to the following: a) GaN enhancement and depletion-mode discrete power devices [1] b) GaN integrated power solutions c) the above in wafer and package levels Wafer level tests are recommended to minimize parasitic effects when performing high precision measurements. For package level tests, the impact of package thermal characteristics should be considered so as to minimize any device under test (DUT) self-heating implications. The prescribed test methods may be used for device characterization, production testing, reliability evaluations and application assessments of GaN power conversion devices. This document is not intended to cover the underlying mechanisms of dynamic ON-resistance and its symbolic representation for product specifications.

IEC 60749-39:2021 is available as IEC 60749-39:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-39:2021 details the procedures for the measurement of the characteristic properties of moisture diffusivity and water solubility in organic materials used in the packaging of semiconductor components. These two material properties are important parameters for the effective reliability performance of plastic packaged semiconductors after exposure to moisture and being subjected to high-temperature solder reflow. This edition includes the following significant technical changes with respect to the previous edition: - updated procedure for "dry weight" determination.

This part of IEC 61967 provides general information and definitions on the measurement of conducted and radiated electromagnetic disturbances from integrated circuits. It also provides a description of measurement conditions, test equipment and set-up as well as the test procedures and content of the test reports. Test method comparison tables are included in Annex A to assist in selecting the appropriate measurement method(s). The object of this document is to describe general conditions in order to establish a uniform testing environment and to obtain a quantitative measure of RF disturbances from integrated circuits (IC). Critical parameters that are expected to influence the test results are described. Deviations from this document are noted explicitly in the individual test report. The measurement results can be used for comparison or other purposes. Measurement of the voltage and current of conducted RF emissions or radiated RF disturbances, coming from an integrated circuit under controlled conditions, yields information about the potential for RF disturbances in an application of the integrated circuit. The applicable frequency range is described in each part of IEC 61967.

IEC 63244-1:2021 provides general requirements and specifications of the semiconductor devices for the performance and reliability evaluations of wireless power transfer and charging systems. For the performance evaluations, this part covers various characterization parameters and symbols, general system diagrams, and test setups and test conditions. This document also describes classifications of the wireless power transfer technologies.

IEC 62435-6:2018 on long-term storage applies to packaged or finished devices in long-term storage that can be used as part of obsolescence mitigation strategy. Long-term storage refers to a duration that can be more than 12 months for product scheduled for storage. Philosophy, good working practice, and general means to facilitate the successful long-term storage of electronic components are also addressed.

IEC 63287-1:2021 gives guidelines for reliability qualification plans of semiconductor integrated circuit products. This document is not intended for military- and space-related applications. NOTE 1 The manufacturer can use flexible sample sizes to reduce cost and maintain reasonable reliability by this guideline adaptation based on EDR-4708, AEC Q100, JESD47 or other relevant document can also be applicable if it is specified. NOTE 2 The Weibull distribution method used in this document is one of several methods to calculate the appropriate sample size and test conditions of a given reliability project. This first edition of IEC 63287-1 cancels and replaces the first edition of IEC 60749-43 published in 2017. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition:
the document has been renamed and renumbered to distinguish it from the IEC 60749 (all parts);
a new section concerning the concept of "family" has been added with appropriate renumbering of the existing text.

IEC 62435-9:2021 specifies storage practices encompassing silicon and semiconductor device building blocks of all types that are integrated together to into products in the form of either packages or boards that can be stored as fully assembled units or partial assemblies. Special attention is given to memories as components and assemblies although methods also apply to heterogeneous components. Guidelines and requirements for customer-supplier interaction are provided to manage the complexity. NOTE In IEC 62435 (all parts), the term "components" is used interchangeably with dice, wafers, passives and packaged devices.

IEC 62969-4:2018 specifies a method of directly fault injection test for automotive semiconductor sensor interface that can be used to support the conformance assurance in the vehicle communications interface.

IEC 62435-4:2018(E) specifies long-term storage methods and recommended conditions for long-term storage of electronic components including logistics, controls and security related to the storage facility. Long-term storage refers to a duration that may be more than 12 months for products scheduled for long duration storage. The philosophy of such storage, good working practices and general means to facilitate the successful long-term storage of electronic components are also addressed.

IEC 62969-3:2018 describes terms, definitions, symbols, configurations, and test methods that can be used to evaluate and determine the performance characteristics of mechanical shock driven piezoelectric energy harvesting devices for automotive vehicle sensor applications. This document is also applicable to energy harvesting devices for motorbikes, automobiles, buses, trucks and their respective engineering subsystems applications without any limitations of device technology and size.

IEC 62228-5:2021(E) specifies test and measurement methods for EMC evaluation of Ethernet transceiver ICs under network condition. It defines test configurations, test conditions, test signals, failure criteria, test procedures, test setups and test boards. It is applicable for transceiver of the Ethernet systems  
100BASE-T1 according to ISO/IEC/IEEE 8802-3/AMD1;
100BASE-TX according to ISO/IEC/IEEE 8802-3;
1000BASE-T1 according to ISO/IEC/IEEE 8802-3/AMD4  and covers  
the emission of RF disturbances;
the immunity against RF disturbances;
the immunity against impulses;
the immunity against electrostatic discharges (ESD).

IEC 62228-1:2018(E) provides general information and definitions for electromagnetic compatibility (EMC) evaluation of integrated circuits (IC) with transceivers for wired network applications under network condition. It defines general test conditions, general test setups and test and measurement methods are applied to all parts of IEC 62228.

IEC 61967-4:2021 is available as IEC 61967-4:2021 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 61967-4:2021 specifies a method to measure the conducted electromagnetic emission (EME) of integrated circuits by direct radio frequency (RF) current measurement with a 1 Ω resistive probe and RF voltage measurement using a 150 Ω coupling network. These methods ensure a high degree of reproducibility and correlation of EME measurement results. This edition includes the following significant technical changes with respect to the previous edition: - frequency range of 150 kHz to 1 GHz has been deleted from the title; - recommended frequency range for 1 Ω method has been reduced to 30 MHz; - Annex G with recommendations and guidelines for frequency range extension beyond 1 GHz has been added.

IEC 62969-2:2018 specifies procedures and definitions for measuring the efficiency of the wireless power transmission system for the automotive vehicles sensors. This document deals with the power range below 500 mW.

IEC 60749-13:2018 describes a salt atmosphere test that determines the resistance of semiconductor devices to corrosion. It is an accelerated test that simulates the effects of severe sea-coast atmosphere on all exposed surfaces. It is only applicable to those devices specified for a marine environment. The salt atmosphere test is considered destructive. This edition includes the following significant technical changes with respect to the previous edition: a) alignment with MIL-STD-883J Method 1009.8, Salt Atmosphere (Corrosion), including information on conditioning and maintenance of the test chamber and mounting of test specimens (including explanatory figures).

IEC 60191-1:2018(E) gives guidelines on the preparation of outline drawings of discrete devices, including discrete surface-mounted semiconductor devices with lead count less than 8. This edition includes the following significant technical changes with respect to the previous edition: a) the Scope has been extended to include surface-mounted semiconductor devices with a lead count less than 8; b) a definition of the term "stand-off" has been added; c) the methods for locating the datum have been extended to be suitable for SMD-packages; d) the visual identification of terminal position one for automatic handling has been clarified; e) the rules for the drawing of terminals have been clarified; f) Table A.1 has been completed with symbols specifically for SMD-packages; g) Annex B "Standardization philosophy" has been deleted; h) a normative Annex with special rules for SMD-packages has been added; i) the examples of semiconductor device drawings have been aligned to state-of-the-art packages including SMD-packages.

IEC 60749-26:2018 establishes the procedure for testing, evaluating, and classifying components and microcircuits according to their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749-27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected. This fourth edition cancels and replaces the third edition published in 2013. This edition constitutes a technical revision. This standard is based upon ANSI/ESDA/JEDEC JS-001-2014. It is used with permission of the copyright holders, ESD Association and JEDEC Solid state Technology Association. This edition includes the following significant technical changes with respect to the previous edition: a) a new subclause relating to HBM stressing with a low parasitic simulator is added, together with a test to determine if an HBM simulator is a low parasitic simulator; b) a new subclause is added for cloned non-supply pins and a new annex is added for testing cloned non-supply pins.

IEC Corrected Version

IEC 62435-7:2020 on long-term storage applies to micro-electromechanical devices (MEMS) in long-term storage that can be used as part of obsolescence mitigation strategy. Long-term storage refers to a duration that may be more than 12 months for products scheduled for storage. Philosophy, good working practice, and general means to facilitate the successful long-term storage of electronic components are also addressed.

IEC 60749-12:2017 describes a test to determine the effect of variable frequency vibration, within the specified frequency range, on internal structural elements. This is a destructive test. It is normally applicable to cavity-type packages This second edition cancels and replaces the first edition published in 2002. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to the previous edition: a) alignment with MIL-STD-883J Method 2007, Vibration, variable frequency.

IEC 62969-1:2017(E) provides general requirements for performance evaluations and environmental conditions for the power interface of automotive vehicle sensors. For performance evaluations, various electrical performances such as voltage drop from power source to automotive sensors, AC noises and voltage level are included. For environmental conditions, various test conditions such as temperature, humidity and vibration are included. In addition, terms, definitions, symbols and configurations are covered in this part.

IEC 60747-17:2020(E) specifies the terminology, essential ratings, characteristics, safety test and the measuring methods of magnetic coupler and capacitive coupler. It specifies the principles and requirements of insulation and isolation characteristics for magnetic and capacitive couplers for basic insulation and reinforced insulation. This first edition cancels and replaces IEC PAS 60747-17:2011. This edition constitutes a technical revision. This edition includes the following significant technical changes with respect to IEC PAS 60747-17:2011: a) introduced lifetime safety factors for improved life time consideration, to comply with widely recognized aging mechanisms of silicone dioxide (TDDB) and thin film polymer isolation layers; b) significantly improved "end of life testing" paragraph and statistical life time consideration by adding detailed description on process, safety factors, methods of generating data points and respective lifetime interpolations as well as being specific on minimum amount of samples required; c) introduced concept of certification by similarity, including Annex A, giving guidance on qualification considerations and required certification process; d) alternative pulse shape allowed for surge pulse testing, to avoid issues due to surge tester availability; e) various improvements throughout the standard: definitions, for example type of coupler have been improved, introduction of surge impulse VIMP rating, usage of glass transition temperature, pre-conditioning have been redefined for improved usability and better compatibility with today’s design and functionality of couplers, available mold compounds, etc.

IEC 62433-6:2020 describes the extraction flow for deriving an immunity macro-model of an Integrated Circuit (IC) against conducted Electrostatic Discharge (ESD) according to IEC 61000-4-2 and Electrical Fast Transients (EFT) according to IEC 61000-4-4. The model addresses physical damages due to overvoltage, thermal damage and other failure modes. Functional failures can also be addressed. This model allows the immunity simulation of the IC in an application. This model is commonly called "Integrated Circuit Immunity Model Conducted Pulse Immunity", ICIM-CPI. This document provides: - the description of ICIM-CPI macro-model elements representing electrical, thermal or logical behaviour of the IC. - a universal data exchange format based on XML.

IEC 60749-20:2020 is available as IEC 60749-20:2020 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition.IEC 60749-20:2020 provides a means of assessing the resistance to soldering heat of semiconductors packaged as plastic encapsulated surface mount devices (SMDs). This test is destructive. This edition includes the following significant technical changes with respect to the previous edition: - incorporation of a technical corrigendum to IEC 60749-20:2008 (second edition ); - inclusion of new Clause 3; - inclusion of explanatory notes.