EN IEC 60749-23:2026

SLOVENSKI STANDARD
oSIST prEN IEC 60749-23:2025
01-januar-2025
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del:
Obratovalna življenjska doba pri visoki temperaturi
Semiconductor devices - Mechanical and climatic test methods - Part 23: High
temperature operating life
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23:
Lebensdauer bei hoher Temperatur
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
23: Durée de vie en fonctionnement à haute température
Ta slovenski standard je istoveten z: prEN IEC 60749-23:2024
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
oSIST prEN IEC 60749-23:2025 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 60749-23:2025
oSIST prEN IEC 60749-23:2025
47/2881/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 60749-23 ED2
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2024-11-22 2025-02-14
SUPERSEDES DOCUMENTS:
47/2879/RR
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):
TC 91,TC 104
ASPECTS CONCERNED:
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING

This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of
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Recipients of this document are invited to submit, with their comments, notification of any relevant “In Some
Countries” clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is the
final stage for submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature
operating life
PROPOSED STABILITY DATE: 2025
NOTE FROM TC/SC OFFICERS:
electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions.
You may not copy or "mirror" the file or printed version of the document, or any part of it, for any other purpose without
permission in writing from IEC.

oSIST prEN IEC 60749-23:2025
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1 CONTENTS
3 FOREWORD . 3
4 1 Scope . 5
5 2 Normative references . 5
6 3 Terms and definitions . 5
7 4 Test apparatus . 6
8 4.1 Testing requirements . 6
9 4.1.1 Circuitry . 6
10 4.1.2 Device schematic . 6
11 4.1.3 Power . 6
12 4.1.4 Device mounting . 6
13 4.1.5 Power supplies and signal sources . 6
14 4.1.6 Environmental chamber . 6
15 5 Procedure . 6
16 5.1 Stress requirements . 6
17 5.2 Stress duration . 6
18 5.3 Stress conditions . 6
19 5.3.1 Stress condition application . 6
20 5.3.2 Ambient temperature . 7
21 5.3.3 Operating voltage . 7
22 5.3.4 Biasing configurations . 7
23 6 Cool-down . 8
24 7 Measurements . 8
25 8 Failure criteria . 9
26 9 Life Testing reporting . 9
27 10 Summary . 9
29 Table 1 – Additional Stress Requirements for Parts Not Tested Within Time Window . 9
oSIST prEN IEC 60749-23:2025
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33 INTERNATIONAL ELECTROTECHNICAL COMMISSION
34 ____________
36 SEMICONDUCTOR DEVICES –
37 MECHANICAL AND CLIMATIC TEST METHODS –
39 Part 23: High temperature operating life
41 FOREWORD
42 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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52 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
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72 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
73 indispensable for the correct application of this publication.
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78 represent the latest information, which may be obtained from the patent database available at
79 https://patents.iec.ch. IEC shall not be held responsible for identifying any or all such patent rights.
80 IEC 60749-23 ED2 has been prepared by IEC technical committee 47: Semiconductor
81 Devices. It is an International Standard.
82 This second edition, based on JEDEC document JESD22-A108G, cancels and replaces the
83 first edition published in 2004, It is used with permission of the copyright holder, JEDEC Solid
84 State Technology Association. This edition constitutes a technical revision.
85 This edition includes the following significant technical changes with respect to the previous
86 edition:
87 a) Absolute stress test definitions and resultant test durations have been updated.

oSIST prEN IEC 60749-23:2025
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88 The text of this International Standard is based on the following documents:
Draft Report on voting
XX/XX/FDIS XX/XX/RVD
90 Full information on the voting for its approval can be found in the report on voting indicated in
91 the above table.
92 The language used for the development of this International Standard is English.
93 This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
94 accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement,
95 available at www.iec.ch/members_experts/refdocs. The main document types developed by
96 IEC are described in greater detail at www.iec.ch/publications.
97 The committee has decided that the contents of this document will remain unchanged until the
98 stability date indicated on the IEC website under webstore.iec.ch in the data related to the
99 specific document. At this date, the document will be
100 • reconfirmed,
101 • withdrawn, or
102 • revised.
oSIST prEN IEC 60749-23:2025
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106 SEMICONDUCTOR DEVICES –
107 MECHANICAL AND CLIMATIC TEST METHODS –
109 Part 23: High temperature operating life
113 1 Scope
114 This test is used to determine the effects of bias conditions and temperature on solid state
115 devices over time. It simulates the device operating condition in an accelerated way, and is
116 primarily for device qualification and reliability monitoring. A form of high temperature bias life
117 using a short duration, popularly known as “burn-in”, may be used to screen for infant-
118 mortality related failures. The detailed use and application of burn-in is outside the scope of
119 this standard.
120 2 Normative references
121 The following documents are referred to in the text in such a way that some or all of their
122 content constitutes requirements of this document. For
...