EN IEC 60749-23:2026
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document. This edition includes the following significant technical changes with respect to the previous edition: a) absolute stress test definitions and resultant test durations have been updated.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 23 : Durée de vie en fonctionnement à haute température
L'IEC 60749-23:2025 spécifie l'essai utilisé pour déterminer les effets dans le temps des conditions de polarisation et de température sur des dispositifs à état solide. Il simule les conditions de fonctionnement des dispositifs d’une manière accélérée et il est essentiellement utilisé pour la qualification et le contrôle de fiabilité. Une forme de durée de vie utilisant une température élevée avec polarisation sur une courte durée, généralement connue sous le nom de "rodage", peut être utilisée pour dépister les défaillances liées à la mortalité infantile. L’utilisation détaillée et l’application du rodage ne font pas partie du domaine d’application du présent document. Cette édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente: a) les définitions des essais de contraintes absolues et les durées d'essai qui en résultent ont été mises à jour.
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del: Obratovalna življenjska doba pri visoki temperaturi (IEC 60749-23:2025)
General Information
- Status
- Published
- Publication Date
- 29-Jan-2026
- Technical Committee
- CLC/TC 47X - Semiconductor devices and trusted chips
- Current Stage
- 6060 - Document made available - Publishing
- Start Date
- 30-Jan-2026
- Due Date
- 07-Jul-2025
- Completion Date
- 30-Jan-2026
Relations
- Effective Date
- 15-Oct-2024
- Effective Date
- 15-Oct-2024
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
- Effective Date
- 03-Feb-2026
Overview
FprEN IEC 60749-23:2025 (CLC adoption of IEC 60749-23:2025) specifies accelerated high temperature operating life (HTOL) test methods for semiconductor devices. The test simulates device operating conditions under combined bias and elevated temperature to assess long‑term effects and to accelerate failure mechanisms for qualification and reliability monitoring. A short‑duration HTOL variant (commonly called "burn‑in") can be used to screen infant‑mortality failures; detailed burn‑in application is outside the scope of this document. This edition updates absolute stress test definitions and resultant test durations compared to the previous edition and is based on JEDEC JESD22‑A108G.
Key Topics
- Scope & purpose: Evaluate effects of bias and temperature over time, primarily for device qualification and reliability monitoring.
- Test apparatus:
- Circuitry must limit power dissipation and prevent thermal runaway.
- Device mounting must ensure representative heat dissipation.
- Environmental chamber tolerance: maintain specified temperature within ±5 °C while parts are loaded and unpowered.
- Stress conditions & procedure:
- Stress is applied continuously except during agreed interim measurements.
- Ambient/bias conditions should yield a minimum junction temperature of 125 °C unless otherwise specified for extended environments.
- A legacy benchmark duration commonly used is 1 000 h, though durations are set to meet equivalent field lifetime based on acceleration factors.
- Devices intended for extended‑temperature use may be stressed up to about 250 °C, but stress must not exceed absolute maximum rated junction temperature or voltage.
- Operating voltage is normally the maximum operating voltage specified for the device; higher voltages may be used for acceleration but must not exceed the absolute maximum rated voltage and should be agreed with the manufacturer.
- Biasing configurations: Static or pulsed bias and dynamic operating stresses are allowed. High temperature forward bias (HTFB) is used primarily for power devices, diodes and discrete transistors.
- Measurements & reporting: Interim and final electrical measurements, failure criteria, and comprehensive life‑test reporting are required.
Applications
- Device qualification and characterization of long‑term reliability.
- Reliability monitoring and lifetime projection for product families.
- Screening for infant‑mortality via burn‑in (note: detailed burn‑in practices are outside the standard).
- Complementary testing for power devices (see power cycling standards).
Related Standards
- IEC 60747 (all parts) - semiconductor devices (discrete & ICs).
- IEC 60749‑34 - Power cycling (complements HTOL for power devices).
- JEDEC JESD22‑A108G - basis for the technical revision used in this edition.
Practical value: Implementing FprEN IEC 60749‑23:2025 enables manufacturers and test labs to produce consistent HTOL data, improve qualification confidence, and better detect early failures during product development and production.
Frequently Asked Questions
EN IEC 60749-23:2026 is a standard published by CLC. Its full title is "Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life". This standard covers: IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document. This edition includes the following significant technical changes with respect to the previous edition: a) absolute stress test definitions and resultant test durations have been updated.
IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document. This edition includes the following significant technical changes with respect to the previous edition: a) absolute stress test definitions and resultant test durations have been updated.
EN IEC 60749-23:2026 is classified under the following ICS (International Classification for Standards) categories: 31.080.01 - Semiconductor devices in general. The ICS classification helps identify the subject area and facilitates finding related standards.
EN IEC 60749-23:2026 has the following relationships with other standards: It is inter standard links to EN 60749-23:2004, EN 60749-23:2004/A1:2011, EN 60749-43:2017, EN IEC 60749-41:2020, EN IEC 63287-1:2021. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.
EN IEC 60749-23:2026 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.
Standards Content (Sample)
SLOVENSKI STANDARD
01-marec-2026
Nadomešča:
SIST EN 60749-23:2004
SIST EN 60749-23:2004/A1:2011
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 23. del:
Obratovalna življenjska doba pri visoki temperaturi (IEC 60749-23:2025)
Semiconductor devices - Mechanical and climatic test methods - Part 23: High
temperature operating life (IEC 60749-23:2025)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23:
Lebensdauer bei hoher Temperatur (IEC 60749-23:2025)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
23: Durée de vie en fonctionnement à haute température (IEC 60749-23:2025)
Ta slovenski standard je istoveten z: EN IEC 60749-23:2026
ICS:
19.020 Preskuševalni pogoji in Test conditions and
postopki na splošno procedures in general
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN IEC 60749-23
NORME EUROPÉENNE
EUROPÄISCHE NORM January 2026
ICS 31.080.01 Supersedes EN 60749-23:2004; EN 60749-
23:2004/A1:2011
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 23: High temperature operating life
(IEC 60749-23:2025)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 23 : Durée de vie en Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur
fonctionnement à haute température (IEC 60749-23:2025)
(IEC 60749-23:2025)
This European Standard was approved by CENELEC on 2026-01-13. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2026 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-23:2026 E
European foreword
The text of document 47/2962/FDIS, future edition 2 of IEC 60749-23, prepared by TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-23:2026.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2027-01-31
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2029-01-31
document have to be withdrawn
This document supersedes EN 60749-23:2004 and all of its amendments and corrigenda (if any).
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60749-23:2025 was approved by CENELEC as a European
Standard without any modification.
In the official version, for Bibliography, the following note has to be added for the standard indicated:
IEC 60749-34 NOTE Approved as EN 60749-34
IEC 60749-23 ®
Edition 2.0 2025-12
INTERNATIONAL
STANDARD
Semiconductor devices - Mechanical and climatic test methods -
Part 23: High temperature operating life
ICS 31.080.01 ISBN 978-2-8327-0903-0
IEC 60749-23:2025-12(en)
IEC 60749-23:2025 © IEC 2025
CONTENTS
FOREWORD . 2
1 Scope . 4
2 Normative references . 4
3 Terms and definitions . 4
4 Test apparatus . 4
4.1 Testing requirements . 4
4.2 Circuitry . 4
4.3 Device schematic . 5
4.4 Power . 5
4.5 Device mounting . 5
4.6 Power supplies and signal sources . 5
4.7 Environmental chamber . 5
5 Procedure . 5
5.1 Stress requirements . 5
5.2 Stress duration . 5
5.3 Stress conditions . 5
5.3.1 Stress condition application . 5
5.3.2 Ambient temperature . 6
5.3.3 Operating voltage . 6
5.3.4 Biasing configurations . 6
6 Cool-down . 7
7 Measurements . 7
8 Failure criteria . 7
9 Life testing reporting . 8
10 Summary . 8
Bibliography . 9
Table 1 – Additional stress requirements for parts not tested within time window . 7
IEC 60749-23:2025 © IEC 2025
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices - Mechanical and climatic test methods -
Part 23: High temperature operating life
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
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9) IEC draws attention to the possibility that the implementation of this document may involve the use of (a)
patent(s). IEC takes no position concerning the evidence, validity or applicability of any claimed patent rights in
respect thereof. As of the date of publication of this document, IEC had not received notice of (a) patent(s), which
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the latest information, which may be obtained from the patent database available at https://patents.iec.ch. IEC
shall not be held responsible for identifying any or all such patent rights.
IEC 60749-23 has been prepared by IEC technical committee 47: Semiconductor devices. It is
an International Standard.
This second edition cancels and replaces the first edition published in 2004 and
Amendment 1:2011. It is based on JEDEC JESD22-A108G. It is used with permission of the
copyright holder, JEDEC Solid State Technology Association. This edition constitutes a
technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) absolute stress test definitions and resultant test durations have been updated.
IEC 60749-23:2025 © IEC 2025
The text of this International Standard is based on the following documents:
Draft Report on voting
47/2962/FDIS 47/2983/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Su
...




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