EN 60749-23:2004
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 23: Lebensdauer bei hoher Temperatur
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 23: Durée de vie en fonctionnemement à haute température
Cet essai est utilisé pour déterminer les effets des conditions de polarisation et de température avec le temps sur des dispositifs à semiconducteurs. Il simule les conditions de fonctionnement des dispositifs d'une manière accélérée et il est essentiellement destiné à la qualification des dispositifs et au contrôle de fiabilité.
Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life (IEC 60749-23:2004)
General Information
- Status
- Published
- Publication Date
- 15-Apr-2004
- Withdrawal Date
- 31-Mar-2007
- Technical Committee
- CLC/TC 47X - Semiconductor devices and trusted chips
- Drafting Committee
- IEC/TC 47 - IEC_TC_47
- Parallel Committee
- IEC/TC 47 - IEC_TC_47
- Current Stage
- 6060 - Document made available - Publishing
- Start Date
- 16-Apr-2004
- Completion Date
- 16-Apr-2004
Relations
- Effective Date
- 29-Jan-2023
- Effective Date
- 15-Oct-2024
Overview
EN 60749-23:2004 (IEC 60749-23:2004) specifies a standardized method for high temperature operating life (HTOL) testing of semiconductor devices. The test simulates operating conditions in an accelerated manner to determine the effects of bias and elevated temperature on solid-state devices over time. It is primarily used for device qualification and reliability monitoring. Typical reference conditions cited include a junction temperature of 125 °C for 1 000 h and chamber temperature control within ±5 °C.
Key Topics
- Purpose: Evaluate long-term behaviour under combined bias and temperature to reveal wear-out mechanisms and assess lifetime acceleration.
- Test types: HTOL, High Temperature Forward Bias (HTFB), High Temperature Reverse Bias (HTRB), and Low Temperature Operating Life (LTOL).
- Stress conditions: Continuous application of temperature and bias (except during interim measurements). The standard discusses ambient and junction temperature control, operating voltage selection, and bias configurations.
- Apparatus requirements: Proper circuitry to prevent thermal runaway, power limiting to avoid cascading failures, calibrated power supplies and measurement equipment, and an environmental chamber capable of maintaining specified temperature tolerance.
- Important limits: Use maximum operating voltage where possible; voltages above that may be used for acceleration but must not exceed the absolute maximum rated voltage and should be agreed with the device manufacturer.
- Measurement and failure: Interim measurements may be taken as defined; failure criteria and cool-down procedures are part of the test flow.
Applications
EN 60749-23 is relevant for engineers and quality teams responsible for:
- Device qualification: Demonstrating that a semiconductor device meets reliability targets before product release.
- Reliability monitoring: Tracking device population health over time in production or qualification lots.
- Burn-in planning: Informing short-duration bias life (burn-in) strategies to screen infant mortality (note: detailed burn-in application is outside this standard's scope).
- Design validation: Verifying thermal management, biasing schemes, and detecting susceptibility to hot-carrier effects, thermal runaway, or junction-related degradation.
Practical benefits include accelerated detection of latent defects, validation of package and thermal designs, and data to support manufacturer or customer reliability claims.
Related Standards
- IEC 60747 series: General semiconductor device and integrated circuit standards referenced by EN 60749-23.
- EN/IEC 60749-34: Power cycling test methods, complementary when assessing power device reliability.
For implementation, refer to the normative references and the clauses on test apparatus, stress duration, stress conditions (5.2), cool-down, measurements and failure criteria in EN 60749-23. Always coordinate accelerated voltage and temperature settings with device manufacturers and follow agreed failure definitions to ensure meaningful qualification data.
Frequently Asked Questions
EN 60749-23:2004 is a standard published by CLC. Its full title is "Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life". This standard covers: This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
This test is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring.
EN 60749-23:2004 is classified under the following ICS (International Classification for Standards) categories: 31.080.01 - Semiconductor devices in general. The ICS classification helps identify the subject area and facilitates finding related standards.
EN 60749-23:2004 has the following relationships with other standards: It is inter standard links to EN 60749-23:2004/A1:2011, EN IEC 60749-23:2026. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.
EN 60749-23:2004 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.
Standards Content (Sample)
SLOVENSKI SIST EN 60749-23:2004
STANDARD
julij 2004
Semiconductor devices - Mechanical and climatic test methods - Part 23: High
temperature operating life (IEC 60749-23:2004)
ICS 31.080.01 Referenčna številka
© Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno
EUROPEAN STANDARD EN 60749-23
NORME EUROPÉENNE
EUROPÄISCHE NORM April 2004
ICS 31.080.01
English version
Semiconductor devices –
Mechanical and climatic test methods
Part 23: High temperature operating life
(IEC 60749-23:2004)
Dispositifs à semiconducteurs – Halbleiterbauelemente –
Méthodes d'essais mécaniques Mechanische und klimatische
et climatiques Prüfverfahren
Partie 23: Durée de vie en Teil 23: Lebensdauer bei hoher
fonctionnemement à haute température Temperatur
(CEI 60749-23:2004) (IEC 60749-23:2004)
This European Standard was approved by CENELEC on 2004-04-01. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Cyprus, Czech
Republic, Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, Netherlands, Norway, Poland, Portugal, Slovakia, Slovenia, Spain, Sweden,
Switzerland and United Kingdom.
CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
Central Secretariat: rue de Stassart 35, B - 1050 Brussels
© 2004 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.
Ref. No. EN 60749-23:2004 E
Foreword
The text of document 47/1735/FDIS, future edition 1 of IEC 60749-23, prepared by IEC TC 47,
Semiconductor devices, was submitted to the IEC-CENELEC parallel vote and was approved by
CENELEC as EN 60749-23 on 2004-04-01.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2005-01-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2007-04-01
Annex ZA has been added by CENELEC.
__________
Endorsement notice
The text of the International Standard IEC 60749-23:2004 was approved by CENELEC as a European
Standard without any modification.
__________
- 3 - EN 60749-23:2004
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following referenced documents are indispensable for the application of this document. For dated
references, only the edition cited applies. For undated references, the latest edition of the referenced
document (including any amendments) applies.
NOTE Where an international publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
Publication Year Title EN/HD Year
IEC 60747 Series Semiconductor devices – Discrete EN 60747 Series
devices and integrated circuits
1) 2)
IEC 60749-34 - Semiconductor devices - Mechanical and EN 60749-34 2004
climatic test methods
Part 34: Power cycling
1)
Undated reference.
2)
Valid edition at date of issue.
NORME CEI
INTERNATIONALE
IEC
60749-23
INTERNATIONAL
Première édition
STANDARD
First edition
2004-02
Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Partie 23:
Durée de vie en fonctionnement
à haute température
Semiconductor devices –
Mechanical and climatic test methods –
Part 23:
High temperature operating life
© IEC 2004 Droits de reproduction réservés ⎯ Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
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Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
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Pour prix, voir catalogue en vigueur
For price, see current catalogue
60749-23 © IEC:2004 – 3 –
CONTENTS
FOREWORD.5
1 Scope.9
2 Normative references.9
3 Terms and definitions .9
4 Test apparatus.11
4.1 Circuitry.11
4.1.1 Device schematic.11
4.1.2 Power.11
4.2 Device mounting.11
4.3 Power supplies and signal sources.11
4.4 Environmental chamber.11
5 Procedure.11
5.1 Stress duration.13
5.2 Stress conditions.13
5.2.1 Ambient temperature.13
5.2.2 Operating voltage.13
5.2.3 Biasing configurations.13
6 Cool-down.15
7 Measurements.15
8 Failure criteria.17
9 Summary.17
60749-23 © IEC:2004 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 23: High temperature operating life
FOREWORD
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International Standard IEC 60749-23 has been prepared by IEC technical committee 47:
Semiconductor devices.
This first edition is based on the IEC/PAS 62189 (2000).
The text of this standard is based on the following documents:
FDIS Report on voting
47/1735/FDIS 47/1745/RVD
Full information on the voting for the approval of this standard ca
...




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