EN IEC 60749-24:2026

SLOVENSKI STANDARD
oSIST prEN IEC 60749-24:2025
01-februar-2025
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 24. del:
Povečana odpornost na vlago
Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated
moisture resistance - Unbiased hast
Halbleiterbauelemente – Mechanische und klimatische Prüfverfahren - Teil 24:
Beschleunigte Feuchtigkeitsbeständigkeit – Unvoreingenommene Hast
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
24: Résistance à l'humidité accélérée - Hast sans polarisation
Ta slovenski standard je istoveten z: prEN IEC 60749-24:2024
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
oSIST prEN IEC 60749-24:2025 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 60749-24:2025
oSIST prEN IEC 60749-24:2025
47/2863/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 60749-24 ED2
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2024-09-06 2024-11-29
SUPERSEDES DOCUMENTS:
47/2858/RR
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):
TC 91,TC 104
ASPECTS CONCERNED:
Environment,Safety
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING

This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of which t hey are
aware and to provide supporting documentation.
Recipients of this document are invited to submit, with their comments, notification of any relevant “In Some Countries” clau ses to
be included should this proposal proceed. Recipients are reminded that the CDV stage is the final stage for submitting ISC
clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance -
Unbiased HAST
PROPOSED STABILITY DATE: 2030
NOTE FROM TC/SC OFFICERS:
electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions. You
may not copy or "mirror" the file or printed version of the document, or any part of it, for any other purpose without permis sion in
writing from IEC.
oSIST prEN IEC 60749-24:2025
47/2863/CDV – 2 – IEC CDV 60749-24 © IEC 2004
CONTENTS
1 Scope . 5
2 Normative references . 5
3 Test requirements . 5
4 Test apparatus . 6
4.1 Test chamber . 6
4.2 Records . 6
4.3 Devices under stress . 6
4.4 Ionic contamination . 6
4.5 Distilled or deionized water . 6
5 Test conditions . 6
6 Procedure. 7
6.1 Mounting . 7
6.2 Ramp-up . 7
6.3 Ramp-down . 8
6.4 Test clock . 8
6.5 Electrical tests . 8
6.6 Handling . 8
7 Failure criteria . 8
8 Safety . 8
9 Summary . 9

Table 1 – Temperature, relative humidity, and pressure . 7

oSIST prEN IEC 60749-24:2025
IEC CDV 60749-24 © IEC 2004 – 3 – 47/2863/CDV
1 INTERNATIONAL ELECTROTECHNICAL COMMISSION
2 ____________
4 SEMICONDUCTOR DEVICES –
5 MECHANICAL AND CLIMATIC TEST METHODS –
7 Part 24: Accelerated moisture resistance – Unbiased HAST
10 FOREWORD
11 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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41 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
42 indispensable for the correct application of this publication.
43 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
44 patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
45 IEC 60749-5 has been prepared by IEC technical committee 47: Semiconductor devices. It is
46 an International Standard.
47 This second edition, based on JEDEC document JESD22-A118B.01, cancels and replaces the
48 first edition published in 2004. lt is used with permission of the copyright holder, JEDEC Solid
49 State Technology Association. This edition constitutes a technical revision.
50 This edition includes the following significant technical changes with respect to the previous
51 edition:
52 a) rearrangement of clauses to reposition requirements;
53 b) addition of 2 notes to the post-test electrical procedures.

oSIST prEN IEC 60749-24:2025
47/2863/CDV – 4 – IEC CDV 60749-24 © IEC 2004
54 The text of this International Standard is based on the following documents:
Draft Report on voting
47/XX/FDIS 47/XX/RVD
56 Full information on the voting for its approval can be found in the report on voting indicated in
57 the above table.
58 The language used for the development of this International Standard is English.
59 This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
60 accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement,
61 available at www.iec.ch/members_experts/refdocs. The main document types developed by
62 IEC are described in greater detail at www.iec.ch/publications.
63 A list of all parts of the IEC 60749 series, under the general title Semiconductor devices –
64 Mechanical and climatic test methods, can be found in the IEC website.
65 The committee has decided that the contents of this document will remain unchanged until the
66 stability date indicated on the IEC website under webstore.iec.ch in the data related to the
67 specific document. At this date, the document will be
68 • reconfirmed,
69 • withdrawn,
70 • replaced by a revised edition, or
71 • amended.
oSIST prEN IEC 60749-24:2025
IEC CDV 60749-24 © IEC 2004 – 5 – 47/2863/CDV
74 SEMICONDUCTOR DEVICES –
75 MECHANICAL AND CLIMATIC TEST METHODS –
...