kSIST FprEN IEC 63616:2025

SLOVENSKI STANDARD
oSIST prEN IEC 63616:2025
01-junij-2025
Merjenje prevodnosti kovinskih tankih plasti pri mikrovalovnih in milimetrskih
frekvencah z metodo uravnoteženega krožnega diska z resonatorjem
Measurement of the conductivity for metal thin films at microwave and millimeter-wave
frequencies balanced-type circular disk resonator method
Ta slovenski standard je istoveten z: prEN IEC 63616:2025
ICS:
33.120.30 Radiofrekvenčni konektorji RF connectors
(RF)
oSIST prEN IEC 63616:2025 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 63616:2025
oSIST prEN IEC 63616:2025
46F/697/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 63616 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2025-02-28 2025-05-23
SUPERSEDES DOCUMENTS:
46F/670/CD, 46F/676/CC
IEC SC 46F : RF AND MICROWAVE PASSIVE COMPONENTS
SECRETARIAT: SECRETARY:
United States of America Mr John Morelli
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):

ASPECTS CONCERNED:
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
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is drawn to the fact that this Committee Draft for Vote (CDV) is
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AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Measurement of the conductivity for metal thin films at microwave and millimeter-wave frequencies balanced-
type circular disk resonator method

PROPOSED STABILITY DATE: 2028
NOTE FROM TC/SC OFFICERS:
This is the replacement for 61169-73 which was decided to renumber as 63616 at the SC46F meeting in November 2024

electronic file, to make a copy and to print out the content for the sole purpose of preparing National Committee positions.
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oSIST prEN IEC 63616:2025
46F/697/CDV – 2 – IEC CDV 63616 © IEC 2025
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Measurement parameters . 5
5 Theory and calculation equations . 6
6 Measurement system . 8
7 Measurement procedure . 9
7.1 Preparation of measurement apparatus. 9
7.2 Adjustment of measurement conditions . 9
7.3 Calibration of a vector network analyzer . 9
7.4 Measurement of the BCDR . 9
7.5 Determination of conductivity . 9
7.6 Periodic checkup of resonator . 9
Annex A (informative) . 11
Example of conductivity measurement results . 11
Bibliography . 13

Figure 1 – Structure of a BCDR . 6
Figure 2 – Configurations of the BCDR for conductivity measurements of metal foils.
Reference BCDR (left) and BCDR of the disk to be measured (right) . 7
Figure 3 – Configurations of the BCDR for interfacial conductivity measurements of
metal layers on substrates. Reference BCDR (left) and BCDR of the metal-clad
samples to be measured (right) . 7
Figure 4 – Schematic diagram of a vector network analyzer measurement system . 8

Table A.1 – Parameters of the copper-clad substrate sample . 11
Figure A.1 – Measured transmissions of the BCDRs with the two configurations . 11
Table A.2 – Measurement results of interfacial conductivity . 12

oSIST prEN IEC 63616:2025
IEC CDV 63616 © IEC 2025 – 3 – 46F/697/CDV
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
MEASUREMENT OF THE CONDUCTIVITY FOR METAL THIN FILMS
AT MICROWAVE AND MILLIMETER-WAVE FREQUENCIES
BALANCED-TYPE CIRCULAR DISK RESONATOR METHOD

FOREWORD
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International Standard IEC 63185 has been prepared by subcommittee 46F: RF and microwave
passive components, of IEC technical committee 46: Cables, wires, waveguides, RF connectors,
RF and microwave passive components and accessories.
The text of this standard is based on the following documents:
FDIS Report on voting
46F/XX/FDIS 46F/XX/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of this publication will remain unchanged until the
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the specific publication. At this date, the publication will be

oSIST prEN IEC 63616:2025
46F/697/CDV – 4 – IEC CDV 63616 © IEC 2025
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this document using a colour printer.

oSIST prEN IEC 63616:2025
IEC CDV 63616 © IEC 2025 – 5 – 46F/697/CDV
1 MEASUREMENT OF THE CONDUCTIVITY FOR METAL THIN FILMS
2 AT MICROWAVE AND MILLIMETER-WAVE FREQUENCIES
3 BALANCED-TYPE CIRCULAR DISK RESONATOR METHOD
7 1 Scope
8 This document relates to a conductivity measurement method of thin metal films at microwave
9 and millimeter-wave frequencies. This method has been developed to evaluate the conductivity
10 of a metal foil used for adhering to a substrate or the interfacial conductivity of a metal layer
11 formed on a dielectric substrate. It uses higher-order modes of a balanced-type circular disk
12 resonator and provides broadband conductivity measurements by using a single resonator.
13 In comparison with the conventional method described in IEC 61788-7, this method has the
14 following characteristics:
15 • the value of the conductivity 𝜎 of a metal foil can be measured accurately and non-
16 destructively;
17 • the value of the interfacial conductivity 𝜎 of a metal layer on a dielectric substrate can be
18 measured accurately and non-destructively;
19 • this method presents broadband measurements by using higher-order modes by one
20 resonator;
21 • this method is applicable for the measurements on the following condition:
22 – frequency: 10 GHz ≤ 𝑓 ≤ 170 GHz;
5 8
23 – conductivity: 10 S/m ≤ 𝜎 ≤ 10 S/m.
24 2 Normative references
25 The following document is referred to in the text in such a way that some or all of the content
26 constitutes requirements of this document. For dated references, only the edition cited applies.
27 For undated references, the latest edition of the referenced document (including any
28 amendments) applies.
29 IEC 61788-7:2020, Electronic characteristic measurements - Surface resistance of high-
30 temperature superconductors at microwave frequencies
31 3 Terms and definitions
32 No terms and definitions are listed in this document.
33 ISO and IEC maintain terminological databases for use in standardization at the following
34 addresses:
35 • IEC Electropedia: available at http://www.electropedia.org/
36 • ISO Online browsing platform: available at http://www.iso.org/obp
38 4 Measurement parameters
39 The measurement parameter is the conductivity of a metal thin film, which is related to the
40 surface resistance 𝑅 as follows
...