IEC 60747-5-2:1997

IEC 60747-5-2 ®
Edition 1.1 2009-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Discrete semiconductor devices and integrated circuits –
Part 5-2: Optoelectronic devices – Essential ratings and characteristics

Dispositifs discrets à semiconducteurs et circuits intégrés –
Partie 5-2: Dispositifs optoélectroniques – Valeurs limites et caractéristiques
essentielles
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IEC 60747-5-2 ®
Edition 1.1 2009-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Discrete semiconductor devices and integrated circuits –
Part 5-2: Optoelectronic devices – Essential ratings and characteristics

Dispositifs discrets à semiconducteurs et circuits intégrés –
Partie 5-2: Dispositifs optoélectroniques – Valeurs limites et caractéristiques
essentielles
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CM
CODE PRIX
ICS 31.080.99 ISBN 978-2-88910-274-7
– 2 – 60747-5-2 © IEC:1997+A1:2002
CONTENTS
FOREWORD.4
INTRODUCTION.6
1 Scope.7
2 Normative references.7
3 Light-emitting diodes (excluding devices for fibre optic systems or subsystems) .8
3.1 Type.8
3.2 Semiconductor material .8
3.3 Colour .8
3.4 Details of outline and encapsulation.8
3.5 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated.8
3.6 Electrical characteristics .9
3.7 Supplementary information .9
4 Infrared-emitting diodes (excluding devices for fibre optic systems or subsystems).9
4.1 Type.9
4.2 Semiconductor material .9
4.3 Details of outline and encapsulation.10
4.4 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated.10
4.5 Electrical characteristics .10
4.6 Supplementary information .11
5 Photodiodes (excluding devices for fibre optic systems or subsystems) .11
5.1 Type.11
5.2 Semiconductor material .11
5.3 Details of outline and encapsulation.11
5.4 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated.11
5.5 Electrical characteristics .12
5.6 Supplementary information .12
6 Phototransistors (excluding devices for fibre optic systems or subsystems) .12
6.1 Type.12
6.2 Semiconductor material .12
6.3 Polarity.12
6.4 Details of outline and encapsulation.12
6.5 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated.13
6.6 Electrical characteristics .14
6.7 Supplementary information .14
7 Photocouplers, optocouplers (with output transistor).14
7.1 Type.14
7.2 Semiconductor material .15
7.3 Polarity of the output resistor .15
7.4 Details of outline and encapsulation.15
7.5 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated.15

60747-5-2 © IEC:1997+A1:2002 – 3 –
7.6 Electrical characteristics .17
7.7 Supplementary information .17
8 Photocouplers (optocouplers) providing protection against electrical shock.18
8.1 Type.18
8.2 Semiconductor material .18
8.3 Details of outline and encapsulation.18
8.4 Ratings (have to be mentioned in a special section
in the manufacturer’s data sheet).18
8.5 Electrical safety requirements .18
8.6 Electrical, environmental and/or endurance test information
(supplementary information) .19
9 Laser diodes.25
9.1 Type.25
9.2 Semiconductor .25
9.3 Details of outline and encapsulation.25
9.4 Limiting values (absolute maximum system) over the operating temperature
range, unless otherwise stated.26
9.5 Electrical and optical characteristics .27
9.6 Supplementary information .28

Annex A (informative) Cross references table.29
Annex B (normative) Input/output safety test .31

Figure 1 – Test voltage.16
Figure B.1 – Circuit diagram.31

Table 1 – Datasheet characteristics.19
Table 2 – Tests and test sequence for photocouplers providing protection
against electrical shock .24
Table 3 – Test conditions .25

– 4 – 60747-5-2 © IEC:1997+A1:2002
INTERNATIONAL ELECTROTECHNICAL COMMISSION
__________
DISCRETE SEMICONDUCTOR DEVICES
AND INTEGRATED CIRCUITS –
Part 5-2: Optoelectronic devices –
Essential ratings and characteristics

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-5-2 has been prepared by subcommittee 47C:
Optoelectronic, display and imaging devices, of IEC technical committee 47: Semiconductor
devices.
This consolidated version of IEC 60747-5-2 consists of the first edition (1997) [documents
47C/173/FDIS and 47C/186/RVD] and its amendment 1 (2002) [documents 47E/209/FDIS and
47E/214/RVD].
The technical content is therefore identical to the base edition and its amendment and has
been prepared for user convenience.
It bears the edition number 1.1.
A vertical line in the margin shows where the base publication has been modified by
amendment 1.
60747-5-2 © IEC:1997+A1:2002 – 5 –
It should be read jointly with IEC 60747-1, IEC 62007-1 and IEC 62007-2.
Annex A is for information only.
Annex B forms an integral part of this standard.
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until the maintenance result date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date,
the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
– 6 – 60747-5-2 © IEC:1997+A1:2002
INTRODUCTION
This part of IEC 60747 provides basic information on semiconductors:
– terminology,
– letter symbols,
– essential ratings and characteristics,
– measuring methods,
– acceptance and reliability.
60747-5-2 © IEC:1997+A1:2002 – 7 –
DISCRETE SEMICONDUCTOR DEVICES
AND INTEGRATED CIRCUITS –
Part 5-2: Optoelectronic devices –
Essential ratings and characteristics

1 Scope
This part of IEC 60747 gives the essential ratings and characteristics of the following
categories or subcategories of optoelectronic devices which are not intended to be used in the
field of fibre optic systems or subsystems:
– Semiconductor photoemitters, including:
. light-emitting diodes (LEDs);
. infrared-emitting diodes (IREDs);
. laser diodes.
– Semiconductor photoelectric detectors, including:
. photodiodes;
. phototransistors.
– Semiconductor photosensitive devices.
– Semiconductor devices utilizing the optical radiation for internal operation, including:
. photocouplers, optocouplers.
2 Normative references
The following referenced documents are indispensable for the application of this document. For
dated references, only the edition cited applies. For undated references, the latest edition of
the referenced document (including any amendments) applies.
IEC 60065:1985, Safety requirements for mains operated electronic and related apparatus for
household and similar general use
IEC 60068-2-1:1990, Environmental testing – Part 2: Tests – Tests A: Cold
IEC 60068-2-2:1974, Environmental testing – Part 2: Tests – Tests B: Dry heat
IEC 60068-2-3:1969, Environmental testing – Part 2: Tests – Test Ca: Damp heat, steady state
IEC 60068-2-6:1995, Environmental testing – Part 2: Tests – Test Fc: Vibration (sinusoidal)
IEC 60068-2-14:1984, Environmental testing – Part 2: Tests – Test N: Change of temperature
IEC 60068-2-17: 1994, Environmental testing – Part 2: Tests – Test Q: Sealing
IEC 60068-2-27:1987, Environmental testing – Part 2: Tests – Test Ea and guidance: Shock
IEC 60068-2-30:1980, Environmental testing – Part 2: Tests – Test Db and guidance: Damp
heat, cyclic (12 + 12-hour cycle)
IEC 60112:1979, Method for determining the comparative and the proof tracking indices of solid
insulating materials under moist conditions

– 8 – 60747-5-2 © IEC:1997+A1:2002
IEC 60216-1:1990, Guide for the determination of thermal endurance properties of electrical
insulating materials – Part 1: General guidelines for ageing procedures and evaluation of test
results
IEC 60216-2:1990, Guide for the determination of thermal endurance properties of electrical
insulating materials – Part 2: Choice of test criteria
IEC 60306-1:1969, Measurement of photosensitive devices – Part 1: Basic recommendations
IEC 60664-1:1992, Insulation coordination for equipment within low-voltage systems – Part 1:
Principles, requirements and tests
IEC 60672-2:1980, Specification for ceramic and glass insulating materials – Part 2: Methods
of test
IEC 60695-2-2:1991, Fire hazard testing – Part 2: Test methods – Section 2: Needle-flame test
IEC 60747-5-1:1997, Discrete semiconductor devices and integrated circuits – Part 5-1:
Optoelectronic devices – General
IEC 60747-5-3:1997, Discrete semiconductor devices and integrated circuits – Part 5-3:
Optoelectronic devices – Measuring methods
3 Light-emitting diodes
(excluding devices for fibre optic systems or subsystems)
3.1 Type
Ambient-rated or case-rated light-emitting diode.
3.2 Semiconductor material
Gallium arsenide-phosphide, etc.
3.3 Colour
3.4 Details of outline and encapsulation
3.4.1 IEC and/or national reference number of the outline drawing.
3.4.2 Method of encapsulation: glass/metal/plastic/other.
3.4.3 Terminal identification and indication of any connection between a terminal and the
case.
3.5 Limiting values (absolute maximum system) over the operating temperature range,
unless otherwise stated
3.5.1 Minimum and maximum storage temperatures (T ).
stg
3.5.2 Minimum and maximum operating ambient or case temperature (T or T ).
amb case
3.5.3 Maximum reverse voltage (V ).
R
NOTE Not applicable to dual-diode devices connected anode-to-cathode and cathode-to-anode.
3.5.4 Maximum continuous forward current (I ) at an ambient or case temperature of 25 °C
F
and derating curve or derating factor.

60747-5-2 © IEC:1997+A1:2002 – 9 –
3.5.5 Where appropriate, maximum peak forward current (I ) at an ambient or case
FM
temperature of 25 °C, under specified pulse conditions.
3.6 Electrical characteristics
For multiple diodes, the characteristics should be given for each diode. For special
applications, additional characteristics may be required.
Conditions at
Ref. Characteristics Notes Symbols Requirements
T or T = 25 °C,
amb case
unless otherwise stated
3.6.1 Forward voltage I specified (d.c. or pulse) V Max.
F F
3.6.2 Reverse current V specified 1 I Max.
R R
3.6.3 Luminous intensity along I specified (d.c. or pulse) 2, 3 I Min.
F v
the defined mechanical
axis
3.6.4 Peak emission I specified (d.c. or pulse) λ Min. Max.
F p
wavelength
3.6.5 Spectral radiation Half value of peak  Max.
Δλ
bandwidth
emission, with I as
F
(where appropriate) specified in 3.6.4
3.6.6 Switching times   Max.
(where appropriate)
3.6.7 Half-intensity angle   Max.
(where appropriate)
NOTE 1 Not applicable to dual-diode devices connected anode-to-cathode and cathode-to-anode.
NOTE 2 If the included solid angle over which the intensity is measured is not negligible, it should be specified.
NOTE 3 For diodes intended for use in multi-diode arrays, maximum luminous intensity is also required.

3.7 Supplementary information
3.7.1 Radiation diagram
A diagram graphically expressing typical luminous intensity versus viewing angle, and using
either polar or rectangular co-ordinates.
3.7.2 Spectral diagram (where appropriate)
A diagram graphically expressing typical luminous intensity versus wavelength.
3.7.3 Mechanical information
Mounting and soldering conditions, where appropriate.
4 Infrared-emitting diodes
(excluding devices for fibre optic systems or subsystems)
4.1 Type
Ambient-rated or case-rated infrared-emitting diode.
4.2 Semiconductor material
Gallium arsenide, etc.
– 10 – 60747-5-2 © IEC:1997+A1:2002
4.3 Details of outline and encapsulation
4.3.1 IEC and/or national reference number of the outline drawing.
4.3.2 Method of encapsulation: glass/metal/plastic/other.
4.3.3 Terminal identification and indication of any connection between a terminal and the
case.
4.4 Limiting values (absolute maximum system) over the operating temperature range,
unless otherwise stated
4.4.1 Minimum and maximum storage temperature (T ).
stg
4.4.2 Minimum and maximum operating ambient or case temperature (T or T ).
amb case
4.4.3 Maximum reverse voltage (V ).
R
4.4.4 Maximum continuous forward current (I ) at an ambient or case temperature of 25 °C
F
and derating curve or derating factor.
4.4.5 Where appropriate, maximum peak forward current (I ) at an ambient or case
PM
temperature of 25 °C, under specified pulse conditions.
4.5 Electrical characteristics
For special applications, additional characteristics may be required.
Conditions at
Ref. Characteristics Notes Symbols Requirements
T or T = 25 °C,
amb case
unless otherwise stated
4.5.1 Forward voltage I specified (d.c. or pulse) V Max.
F F
4.5.2 Reverse current V specified I Max.
R R
4.5.3 Radiant power output or I specified (d.c. or pulse) 1 Min.
φ
F
e
radiant intensity along the
I Min.
e
defined mechanical axis
4.5.4 Peak emission I specified (d.c. or pulse) λ Min. Max.
F p
wavelength
4.5.5 Spectral radiation Half-value of peak  Max.
Δλ
bandwidth (where emission, with I as
F
appropriate)
specified in 4.5.4
4.5.6 Switching times (where   Max.
appropriate)
4.5.7 Half-intensity angle   Max.
(where appropriate)
4.5.8 Capacitance (where   Max.
appropriate)
NOTE 1 If the included solid angle over which the intensity is measured is not negligible, it should be specified.

60747-5-2 © IEC:1997+A1:2002 – 11 –
4.6 Supplementary information
4.6.1 Radiation diagram
A diagram graphically expressing typical radiant power output or radiant intensity versus
angle with respect to the defined mechanical axis, and using either polar or rectangular
coordinates.
4.6.2 Spectral diagram (where appropriate)
A diagram graphically expressing typical radiant power output or radiant intensity versus
wavelength.
4.6.3 Mechanical information
Mounting and soldering conditions, where appropriate.
5 Photodiodes
(excluding devices for fibre optic systems or subsystems)
5.1 Type
Ambient-rated or case-rated photodiode intended for small-signal and switching applications.
5.2 Semiconductor material
Silicon, etc.
5.3 Details of outline and encapsulation
5.3.1 IEC and/or national reference number of the outline drawing.
5.3.2 Method of encapsulation: glass/metal/plastic/other.
5.3.3 Terminal identification and indication of any connection between a terminal and the
case.
5.4 Limiting values (absolute maximum system) over the operating temperature range,
unless otherwise stated
5.4.1 Minimum and maximum storage temperatures (T ).
stg
5.4.2 Minimum and maximum operating ambient or case temperature (T or T ).
amb case
5.4.3 Maximum reverse voltage (V ).
R
5.4.4 Where appropriate:
– maximum total power dissipation (P ) up to ambient or case temperature of 25 °C, and
tot
– derating factor above 25 °C (K ) or derating curve.
t
– 12 – 60747-5-2 © IEC:1997+A1:2002
5.5 Electrical characteristics

Conditions at
Ref. Characteristics Notes Symbols Requirements
T or T = 25 °C,
amb case
unless otherwise stated
5.5.1 Reverse current under V specified 1 I or I Min.
R R(H) R(e)
irradiation
E or E specified
v e
5.5.2 Dark current V specified, E = 0 I Max.
R e R
5.5.3 Dark current V specified, E = 0  I Max.
R e R
at a specified high
temperature of T or
amb
T specified
case
5.5.4 Where appropriate, V specified, E S Min.
R e
spectral sensitivity specified, at a short
wavelength λ specified
S Min.
and at a longer
wavelength λ specified
5.5.5 Switching times (where Specified circuit
appropriate):
rise time and specified value of V , t Max.
R r
fall time E or E specified t Max.
v e r
or: Specified circuit
turn-on time and specified value of V , t Max.
R on
turn-off time E or E specified t Max.
v e off
NOTE 1 Illumination by standard illuminant A (according to IEC 60306-1) emitted from a filament tungsten lamp
with a colour temperature T = 2 855,6 K or with radiation from a defined monochromatic source.

5.6 Supplementary information
5.6.1 Diagram of typical sensitivity
5.6.2 Typical spectral diagram
A diagram graphically expressing relative spectral sensitivity versus wavelength.
6 Phototransistors
(excluding devices for fibre optic systems or subsystems)
6.1 Type
Ambient-rated or case-rated phototransistor intended for small-signal and switching
applications.
6.2 Semiconductor material
Silicon, etc.
6.3 Polarity
NPN/PNP.
6.4 Details of outline and encapsulation
6.4.1 IEC and/or national reference number of the outline drawing.
6.4.2 Method of encapsulation: glass/metal/plastic/other.

60747-5-2 © IEC:1997+A1:2002 – 13 –
6.4.3 Terminal identification and indication of any connection between a terminal and the
case.
6.5 Limiting values (absolute maximum system) over the operating temperature range,
unless otherwise stated
6.5.1 Minimum and maximum storage temperature (T ).
stg
6.5.2 Minimum and maximum operating ambient or case temperatures (T or T ).
amb case
6.5.3 Maximum collector-emitter voltage with zero base current (V ).
CEO
6.5.4 Where an external base connection is present:
6.5.4.1 Maximum collector-base voltage with zero emitter current (V ).
CBO
6.5.4.2 Maximum emitter-base voltage with zero collector current (V ).
EBO
6.5.5 Where no external base connection is present:
Maximum emitter-collector voltage (V ).
ECO
).
6.5.6 Maximum continuous collector current (I
C
6.5.7 Where appropriate:
– maximum total power dissipation (P ) up to ambient or case temperature of 25 °C, and
tot
– derating factor above 25 °C (K ) or derating curve.
t
– 14 – 60747-5-2 © IEC:1997+A1:2002
6.6 Electrical characteristics
Conditions at
Ref. Characteristics Notes Symbols Requirements
T or T = 25 °C,
amb case
unless otherwise stated
6.6.1 Collector current under V specified, I = 0 1 I Min. Max.*
CE B C(H)
irradiation
E or E specified or I
v e C(e)
6.6.2 Collector-emitter dark V specified, I = 0 I Max.
CE B CEO
current E = 0
e
6.6.3 Collector-emitter dark V specified, I = 0 I Max.
CE B CEO
current
E = 0 at a specified high
e
temperature T or T
amb case
6.6.4 Collector-emitter I specified, I = 0, E = 0 V Min.
C B e (BR)CEO
breakdown voltage
6.6.5 Emitter-base breakdown I specified, E = 0 V Min.
E e (BR)CEO
voltage or, where no base
connection is present,
emitter-collector
breakdown voltage
6.6.6 Collector-emitter I specified, I = 0, E or 1 V Max.
C B v CEsat
saturation voltage E specified, preferably
e
as in 6.6.1
6.6.7 Where appropriate, I = 0, E specified, at a S Min.
B e
spectral sensibility
short wavelength λ
specified and at a longer
Min.
S
wavelength λ specified
6.6.8 Switching times (where
appropriate):
rise time and fall time Specified circuit, t Max.
r
specified values of V Max.
t
CE t
and I , E or E specified
C v e
or:
turn-on time and turn-off Specified circuit, t Max.
on
time specified values of V t Max.
CE off
and I , E or E specified
C v e
* Where appropriate.
NOTE 1 Illumination by standard illuminant A (according to IEC 60306-1) emitted from a tungsten filament lamp
with a colour temperature T = 2 855,6 K or with radiation from a defined monochromatic source.

6.7 Supplementary information
6.7.1 Diagram of typical sensitivity
6.7.2 Typical spectral diagram
A diagram graphically expressing relative spectral sensitivity versus wavelength.
7 Photocouplers, optocouplers (with output transistor)
7.1 Type
Ambient-rated or case-rated photocouplers, optocouplers, with transistor output, for signal-
isolation applications.
60747-5-2 © IEC:1997+A1:2002 – 15 –
7.2 Semiconductor material
Input diode: gallium arsenide, aluminium arsenide, etc.
Output transistor: silicon, etc.
7.3 Polarity of the output resistor
7.4 Details of outline and encapsulation
7.4.1 IEC and/or national reference number of the outline drawing.
7.4.2 Method of encapsulation: glass/metal/plastic/other.
7.4.3 Terminal identification and indication of any connection between a terminal and the
case.
7.5 Limiting values (absolute maximum system) over the operating temperature range,
unless otherwise stated
Indicate any qualifications such as time, frequency, pulse duration, humidity, etc.
7.5.1 Minimum and maximum storage temperatures (T ).
stg
7.5.2 Minimum and maximum ambient or reference-point operating temperatures (T
amb
or T ).
ref
7.5.3 Maximum soldering temperature (T ).
sld
Maximum soldering time and minimum distance to case should be specified.
).
7.5.4 Maximum continuous (direct) reverse input voltage (V
R
7.5.5 Maximum collector-emitter voltage, with the base open-circuited (V ).
CEO
7.5.6 Maximum collector-base voltage, where an external base connection is present, with
the emitter open-circuited (V ).
CBO
7.5.7 Maximum emitter-base voltage, where an external base connection is present, with
the collector open-circuited (V ).
EBO
or:
7.5.8 Maximum emitter-collector voltage, where no external base connection is present
(V ).
ECO
7.5.9 Maximum continuous (direct) or repetitive peak isolation voltage (V or V ).
IO IORM
The waveshape and repetition rate should be specified.

– 16 – 60747-5-2 © IEC:1997+A1:2002
7.5.10 Where appropriate, maximum surge isolation voltage (V ).
IOSM
This should be specified for pulses of both polarities having the waveshape shown in
Figure 1.
Figure 1 – Test voltage
7.5.11 Maximum continuous collector current (I ).
C
7.5.12 Maximum continuous forward input current (I ) at an ambient or reference-point
F
temperature of 25 °C and derating curve or derating factor.
7.5.13 Maximum peak forward input current (I ) at an ambient or reference-point
FRM
temperature of 25 °C and under specified pulse conditions.
7.5.14 Maximum power dissipation (P ) of the output transistor at an ambient or
trn
reference-point temperature of 25 °C and a derating curve or derating factor.
7.5.15 Maximum total power dissipation of the package (P ) at an ambient or reference-
tot
point temperature of 25 °C and derating curve or derating factor.

60747-5-2 © IEC:1997+A1:2002 – 17 –
7.6 Electrical characteristics

Conditions at
Ref. Characteristics Notes Symbols Requirements
T or T = 25 °C,
amb case
unless otherwise stated
7.6.1 Input diode forward I specified V Max.
F F
voltage
7.6.2 Input diode reverse V specified I Max.
R R
current
7.6.3 Collector-emitter dark V specified, I = 0,  I Max.
CE F CEO
current I = 0 (base open-circuit)
B
or, where appropriate*, V specified, I = 0,  I Max.
CB F CBO
collector-base dark I = 0
E
current
7.6.4 Collector-emitter dark V specified, I = 0,  I Max.
CE F CEO
current
I = 0, T or T
B amb ref
specified
or, where appropriate*, V specified, I = 0,   Max.
I
CB F CBO
collector base dark I = 0
E
current T or T specified
amb ref
7.6.5 Collector-emitter I and I specified, I = 0 V Max.
F C B CEsat
saturation voltage
or, where appropriate*, I and I specified, I = 0 V Max.
F C B CB
collector-base voltage
7.6.6 Current transfer ratio I or I and V specified, h or Min. Max.
F C CE F
I = 0 CTR (d.c.)
B
7.6.7 Where appropriate, I or I and V specified, h ou Min. Max.
F C CE f
differential current I = 0, frequency CTR (a.c.)
B
transfer ratio specified
7.6.8 Isolation resistance V specified 1 r Min
IO IO
between input and output
7.6.9 Where appropriate, input- f = 1 MHz, I = 0, I = 0 1 C Max.
F C io
to-output capacitance
7.6.10 Where appropriate,
switching times:
turn-on time and Specified V , I and R , t Max.
CC F L on
turn-off time and nominal I , test t Max.
C off
circuit specified
or:
rise time and Specified V , I and R , t Max.
CC F L r
fall time Max.
and nominal I , test t
C t
circuit specified
7.6.11 Where appropriate, cut- I or I and V specified, 2 f Min.
f C CE ctr
off frequency I = 0
B
* For operation in the diode mode.
NOTE 1 All input terminals should be connected together and all output terminals should be connected together.
NOTE 2 The cut-off frequency is the lowest frequency at which the magnitude of the a.c. current transfer ratio is
0,707 times its value at very low frequency.

7.7 Supplementary information
Under consideration.
– 18 – 60747-5-2 © IEC:1997+A1:2002
8 Photocouplers (optocouplers) providing protection against electrical shock
All requirements contained in this clause are valid for photocouplers (optocouplers) with
a solid insulation in one package, whatever the configuration of the input and/or the output
may be (e.g. phototransistor, logic output,.etc.).
8.1 Type
Ambient-rated or case-rated photocoupler (optocoupler) with . (indicate here the kind of input
and/or output) . designed to provide protection against electrical shock, when bridging double
or reinforced isolation.
8.2 Semiconductor material
See clause 7 and any other future
8.2.1 Input
subsequent clause
Gallium Arsenide, Gallium Aluminum Arsenide, etc.
8.2.2 Output
Silicon, etc.
8.3 Details of outline and encapsulation
8.3.1 IEC and/or national reference number of the outline drawing
8.3.2 Method of encapsulation
8.3.3 Terminal identification and indication of any connection
between a terminal and the case
8.4 Ratings (have to be mentioned in a special section
in the manufacturer’s data sheet)
8.4.1 Safety ratings
a) Maximum ambient safety temperature (T )
s
b) Maximum input current or maximum input power dissipation (I or P )
si si
c) Maximum output current or maximum output power dissipation (I or P )
so so
8.4.2 Functional ratings
Package related values: temperatures, total power dissipation.
Input and output related values: voltages, currents, power dissipation.
8.4.3 Rated isolation voltages
a) Maximum working isolation voltage: V
IOWM
b) Maximum repetitive isolation voltage: V
IORM
c) Maximum transient isolation voltage: V
IOTM
8.5 Electrical safety requirements
The following characteristics as shown in table 1 have to be mentioned in the manufacturer’s
datasheet, in addition to those listed in clause 7.

60747-5-2 © IEC:1997+A1:2002 – 19 –
Table 1 – Datasheet characteristics
Ref. Characteristics Conditions Notes Symbol Requirements
8.5.1 Apparent charge See 5.5 of IEC 60747-5-3 Max.
q
pd
(method a))
8.5.2 Apparent charge  Max.
q
pd
(method b))
8.5.3 Isolation resistance R Min.
100 °C ≤ T ≤ T max.
IO
amb amb
V = 500 V
IO
8.5.4 Isolation resistance T = T (see 8.4.1 a)) R Min.
amb s IO
(under fault conditions)
V = 500 V
IO
8.5.5 External clearance See IEC 60664-1, tables 2 and 4, or Symbols Min.
External creepage equivalent for minimum requirements under

distance (inhomogeneous field)  consider-
Refer to related equipment standards ation
Min.
for further requirements
8.5.6 Comparative tracking  CTI Min.
index
8.5.7 Over voltage category
8.5.8 Climatic category
8.5.9 Pollution degree
8.6 Electrical, environmental and/or endurance test information
(supplementary information)
See tables 2 and 3 for reference.
8.6.1 At the routine test stage (method b) an isolation test according to 5.4 of IEC 60747-5-3
shall be performed followed by a partial discharge test according to 5.5 of IEC 60747-5-3. Both
tests may be performed either on the same test equipment without delay (method b1) or on a
different test equipment with delay (method b2). The isolation test can be omitted if the partial
discharge test is performed at V (method b3). Any isolation tests either by the equipment or
ini,b
photocoupler manufacturer can be performed with voltages greater than or equal to test
voltages defined in equipment standards (e.g. 4 kV r.m.s.), but have to be equal to or lower
.
than V
pd(ini),b
8.6.2 Partial discharge test (method a, destructive test) shall be performed on a sample basis
once per quarter. A minimum sample of 20 devices will be picked from a random production lot
for each package type.
NOTE Packages should be significantly different in terms of package outline dimensions. The lead form option will
not be construed as a significant difference.
A production lot is defined here as the number of devices which have been produced using the
same production line and production conditions. Examples of different package types are: DIP-
4,-6,-8,…SOP-4,-6,-8,…etc. Thus, if a manufacturer has five different package types, then 20
samples each would be pulled for this destructive partial discharge test for a total of (5 × 20 =
100 optocouplers) per quarter. Multiple channels do not make a package type difference. The
purpose of this random testing per quarter is to monitor the quality of the manufacturing with
respect to selected criteria. The minimum sampling size is n = 80 of which the failures shall be
c = 0, i.e. there shall be no failures.

– 20 – 60747-5-2 © IEC:1997+A1:2002
8.6.3 Type test shall be performed with the introduction of a new photocoupler, which differs
from already tested photocouplers in one or more of the following items:
– package materials relevant for insulation
Mold materials, silicone gels, foils, etc.;
– lead frame
If the new lead frame affects the external creepage distance or external clearance or the
thermal resistance of the package and thereby I or P or I or P are affected;
si si so so
– package construction
(Examples: change from single mold coplanar to a double mold coplanar package).
Any changes of one or more of those items are considered major changes, which require a new
type test for an existing product.
Periodic test shall be done latest 5 years after type testing and shall be repeated latest every 5
years.
Type tests and periodic tests shall include at least the following subgroups (8.6.3.1 to 8.6.3.8),
with the following conditions:
– zero failure shall be achieved;
– if one failure occurs out of the 130 devices, further quantities of devices shall be subjected
to the subgroup (in which the failure occurred), with no more failures.
NOTE Safety limiting values (I , P , I , P , T ).
si si so so s
For components to provide safe electrical isolation, the requirements for satisfactory isolation have the first priority.
The safety limiting values are the maximum input current (I ), or maximum input power (P ), or maximum output
si si
current (I ), or maximum output power (P ), or the maximum safety limit temperature (T ) that are defined by the
so so c
manufacturer for an optocoupler device that can be allo
...