IEC 62047-9:2011

IEC 62047-9 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 9: Wafer to wafer bonding strength measurement for MEMS

Dispositifs à semiconducteurs – Dispositif microélectromécaniques –
Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

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IEC 62047-9 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 9: Wafer to wafer bonding strength measurement for MEMS

Dispositifs à semiconducteurs – Dispositif microélectromécaniques –
Partie 9: Mesure de la résistance de collage de deux plaquettes pour les MEMS

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX T
ICS 31.080.99 ISBN 978-2-88912-585-2

– 2 – 62047-9  IEC:2011
CONTENTS
FOREWORD. 4
1 Scope . 6
2 Normative references . 6
3 Measurement methods . 6
3.1 General . 6
3.2 Visual test . 6
3.2.1 Types of visual test . 6
3.2.2 Equipment . 7
3.2.3 Procedure . 7
3.2.4 Expression of results . 7
3.3 Pull test . 7
3.3.1 General . 7
3.3.2 Equipment . 8
3.3.3 Procedure . 8
3.3.4 Expression of results . 9
3.4 Double cantilever beam test using blade . 9
3.4.1 General . 9
3.4.2 Equipment . 11
3.4.3 Procedure . 11
3.4.4 Expression of results . 11
3.5 Electrostatic test . 12
3.5.1 General . 12
3.5.2 Equipment . 13
3.5.3 Procedure . 13
3.5.4 Expression of results . 14
3.6 Blister test . 14
3.6.1 General . 14
3.6.2 Preparation of the specimens . 15
3.6.3 Test apparatus and testing method . 15
3.6.4 Report . 16
3.7 Three-point bending test . 16
3.7.1 General . 16
3.7.2 Preparation of the specimens . 17
3.7.3 Test apparatus and testing method . 18
3.7.4 Report . 19
3.8 Die shear test . 19
3.8.1 General . 19
3.8.2 Preparation of the specimens . 20
3.8.3 Test apparatus . 21
3.8.4 Test method . 21
3.8.5 Shear bonding strength . 22
3.8.6 Report . 22
Annex A (informative) Example of bonding force . 23
Annex B (informative) An example of the fabrication process for three-point bending
specimens . 24
Bibliography . 25

62047-9  IEC:2011 – 3 –
Figure 1 – Bonding strength measurement – pull test . 8
Figure 2 – Bonding strength measurement – double cantilever beam (DCB) test
specimen using blade . 10
Figure 3 – Bonding strength measurement – electrostatic test . 13
Figure 4 – A specimen for blister test . 15
Figure 5 – Three-point bending specimen and loading method . 17
Figure 6 – Specimen geometry of three-point bending specimen . 18
Figure 7 – Die shear testing set-up . 19
Figure 8 – Size requirement of control tool and specimen . 20
Figure 9 – Example of bonded region in test piece . 20
Figure 10 – Setting of contact tool . 22
Figure A.1 – An example of bonding force or load measurement with time at constant
rate of upper fixture moving . 23
Figure B.1 – An example of specimen preparation for three-point bending test . 24

Table 1 – Example of visual test . 7
Table 2 − Example of pull test . 9
Table 3 – Example of Double Cantilever Beam test using blade . 12
Table 4 – Example of electrostatic test . 14

– 4 – 62047-9  IEC:2011
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 9: Wafer to wafer bonding strength measurement for MEMS

FOREWORD
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