IEC 62132-8:2012

IEC 62132-8 ®
Edition 1.0 2012-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Integrated circuits – Measurement of electromagnetic immunity –
Part 8: Measurement of radiated immunity – IC stripline method

Circuits intégrés – Mesure de l'immunité électromagnétique –
Partie 8: Mesure de l’immunité rayonnée – Méthode de la ligne TEM à plaques
pour circuit intégré
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form
or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from
either IEC or IEC's member National Committee in the country of the requester.
If you have any questions about IEC copyright or have an enquiry about obtaining additional rights to this publication,
please contact the address below or your local IEC member National Committee for further information.

Droits de reproduction réservés. Sauf indication contraire, aucune partie de cette publication ne peut être reproduite ni
utilisée sous quelque forme que ce soit et par aucun procédé, électronique ou mécanique, y compris la photocopie et les
microfilms, sans l'accord écrit de la CEI ou du Comité national de la CEI du pays du demandeur.
Si vous avez des questions sur le copyright de la CEI ou si vous désirez obtenir des droits supplémentaires sur cette
publication, utilisez les coordonnées ci-après ou contactez le Comité national de la CEI de votre pays de résidence.

IEC Central Office Tel.: +41 22 919 02 11
3, rue de Varembé Fax: +41 22 919 03 00
CH-1211 Geneva 20 info@iec.ch
Switzerland www.iec.ch
About the IEC
The International Electrotechnical Commission (IEC) is the leading global organization that prepares and publishes
International Standards for all electrical, electronic and related technologies.

About IEC publications
The technical content of IEC publications is kept under constant review by the IEC. Please make sure that you have the
latest edition, a corrigenda or an amendment might have been published.

Useful links:
IEC publications search - www.iec.ch/searchpub Electropedia - www.electropedia.org
The advanced search enables you to find IEC publications The world's leading online dictionary of electronic and
by a variety of criteria (reference number, text, technical electrical terms containing more than 30 000 terms and
committee,…). definitions in English and French, with equivalent terms in
It also gives information on projects, replaced and additional languages. Also known as the International
withdrawn publications. Electrotechnical Vocabulary (IEV) on-line.

IEC Just Published - webstore.iec.ch/justpublished Customer Service Centre - webstore.iec.ch/csc
Stay up to date on all new IEC publications. Just Published If you wish to give us your feedback on this publication
details all new publications released. Available on-line and or need further assistance, please contact the
also once a month by email. Customer Service Centre: csc@iec.ch.

A propos de la CEI
La Commission Electrotechnique Internationale (CEI) est la première organisation mondiale qui élabore et publie des
Normes internationales pour tout ce qui a trait à l'électricité, à l'électronique et aux technologies apparentées.

A propos des publications CEI
Le contenu technique des publications de la CEI est constamment revu. Veuillez vous assurer que vous possédez
l’édition la plus récente, un corrigendum ou amendement peut avoir été publié.

Liens utiles:
Recherche de publications CEI - www.iec.ch/searchpub Electropedia - www.electropedia.org
La recherche avancée vous permet de trouver des Le premier dictionnaire en ligne au monde de termes
publications CEI en utilisant différents critères (numéro de électroniques et électriques. Il contient plus de 30 000
référence, texte, comité d’études,…). termes et définitions en anglais et en français, ainsi que
Elle donne aussi des informations sur les projets et les les termes équivalents dans les langues additionnelles.
publications remplacées ou retirées. Egalement appelé Vocabulaire Electrotechnique
International (VEI) en ligne.
Just Published CEI - webstore.iec.ch/justpublished
Service Clients - webstore.iec.ch/csc
Restez informé sur les nouvelles publications de la CEI.
Just Published détaille les nouvelles publications parues. Si vous désirez nous donner des commentaires sur
Disponible en ligne et aussi une fois par mois par email. cette publication ou si vous avez des questions
contactez-nous: csc@iec.ch.
IEC 62132-8 ®
Edition 1.0 2012-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Integrated circuits – Measurement of electromagnetic immunity –

Part 8: Measurement of radiated immunity – IC stripline method

Circuits intégrés – Mesure de l'immunité électromagnétique –

Partie 8: Mesure de l’immunité rayonnée – Méthode de la ligne TEM à plaques

pour circuit intégré
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX T
ICS 31.200 ISBN 978-2-83220-206-7

– 2 – 62132-8  IEC:2012
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 General . 7
5 Test conditions . 7
5.1 General . 7
5.2 Supply voltage. 8
5.3 Frequency range . 8
6 Test equipment . 8
6.1 General . 8
6.2 Cables . 8
6.3 Shielding . 8
6.4 RF disturbance generator . 8
6.5 IC stripline . 8
6.6 50 Ω termination . 8
6.7 DUT monitor . 8
7 Test setup . 9
7.1 General . 9
7.2 Test configuration . 9
7.3 EMC test board (PCB) . 9
8 Test procedure . 9
8.1 General . 9
8.2 Operational check . 10
8.3 Immunity measurement . 10
8.3.1 General . 10
8.3.2 RF disturbance signal . 10
8.3.3 Test frequency steps and ranges . 10
8.3.4 Test levels and dwell time . 10
8.3.5 DUT monitoring . 10
8.3.6 Detail procedure . 11
9 Test report. 11
10 RF immunity acceptance level . 11
Annex A (normative) Field strength determination . 12
Annex B (normative) IC stripline descriptions . 15
Annex C (informative) Closed stripline geometrical limitations . 18
Bibliography . 22

Figure 1 – IC stripline test setup . 9
Figure A.1 – Definition of height (h) and width (w) of IC stripline . 12
Figure A.2 – EM field distribution . 13
Figure B.1 – Cross section view of an example of an open IC stripline . 15
Figure B.2 – Cross section view of an example of a closed IC stripline . 16

62132-8  IEC:2012 – 3 –
Figure B.3 – Example of IC stripline with housing . 17
Figure C.1 – Calculated H-field reduction of closed version referenced to referring
open version as a function of portion of active conductor width of closed version to
open version . 20
Figure C.2 – Location of currents and mirrored currents at grounded planes used for
calculation of fields . 21

Table 1 – Frequency step size versus frequency range . 10
Table B.1 – Maximum DUT dimensions for 6,7 mm IC stripline (Open version) . 16
Table B.2 – Maximum DUT dimensions for 6,7 mm IC stripline (Closed version) . 16
Table C.1 – Height of shielding, simulated at h = 6,7mm to achieve practically
bottom
50 Ω system . 19

– 4 – 62132-8  IEC:2012
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
INTEGRATED CIRCUITS –
MEASUREMENT OF ELECTROMAGNETIC IMMUNITY –

Part 8: Measurement of radiated immunity –
IC stripline method
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62132-8 has been prepared by subcommittee 47A: Integrated
circuits, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47A/882/FDIS 47A/886/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
This part of IEC 62132 is to be read in conjunction with IEC 62132-1.

62132-8  IEC:2012 – 5 –
A list of all the parts in the IEC 62132 series, published under the general title Integrated
circuits – Measurement of electromagnetic immunity, can be found on the IEC website.
Future standards in this series will carry the new general title as cited above. Titles of existing
standards in this series will be updated at the time of the next edition.
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
– 6 – 62132-8  IEC:2012
INTEGRATED CIRCUITS –
MEASUREMENT OF ELECTROMAGNETIC IMMUNITY –

Part 8: Measurement of radiated immunity –
IC stripline method
1 Scope
This part of IEC 62132 specifies a method for measuring the immunity of an integrated circuit
(IC) to radio frequency (RF) radiated electromagnetic disturbances over the frequency range
of 150 kHz to 3 GHz.
2 Normative references
The following documents, in whole or in part, are normatively referenced in this document and
are indispensable for its application. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60050 (all parts), International Electrotechnical Vocabulary (available at
http://www.electropedia.org)
IEC 62132-1:2006, Integrated circuits – Measurement of electromagnetic immunity, 150 kHz
to 1 GHz – Part 1: General conditions and definitions
IEC 61000-4-20, Electromagnetic compatibility (EMC) – Part 4-20: Testing and measurement
techniques – Emission and immunity testing in transverse electromagnetic (TEM) waveguides
3 Terms and definitions
For the purpose of this document, the terms and definitions given in IEC 62132-1:2006,
Clause 3, IEC 60050-131 and IEC 60050-161, and the following, apply.
3.1
transverse electromagnetic mode
TEM
waveguide mode in which the components of the electric and magnetic fields in the
propagation direction are much less than the primary field components across any transverse
cross-section
Note 1 to entry: This note only applies to the French language.
3.2
TEM waveguide
open or closed transmission line system, in which a wave is propagating in the transverse
electromagnetic mode to produce a specified field for testing purposes
3.3
IC stripline
TEM waveguide, consisting of an active conductor placed on a defined spacing over an
enlarged ground plane, connected to a port structure on each end and an optional shielded
enclosure
62132-8  IEC:2012 – 7 –
Note 1 to entry: This arrangement guides a wave propagation in the transverse electromagnetic mode to produce a
specific field for testing purposes between the active conductor and the enlarged ground plane. The ground plane
of the standard EMC test board according to IEC 62132-1:2006, Annex B, should be used. An optional shielding
enclosure may be used for fixing the IC stripline configuration and for shielding purposes. This leads to a closed
version of the IC stripline in opposite to the open version without shielding enclosure. For further information see
Annex A.
3.4
two-port TEM waveguide
TEM waveguide with input/output measurement ports at both ends
3.5
characteristic impedance
magnitude of the ratio of the voltage between the active conductor and the corresponding
ground plane to the current on either conductor for any constant phase wave-front
Note 1 to entry: The characteristic impedance is independent of the voltage/current magnitudes and depends only
on the cross sectional geometry of the transmission line. TEM waveguides are typically designed to have a 50 Ω
characteristic impedance. For further information and equation to stripline arrangements see Annex A.
3.6
primary field component
primary component
electric field component aligned with the intended test polarization
Note 1 to entry: For example, in IC stripline, the active conductor is parallel to the horizontal floor, and the primary
mode electric field vector is vertical at the transverse centre of the IC stripline.
4 General
An IC to be evaluated for EMC performance is referred to as a device under test (DUT). The
DUT should be mounted on an EMC test board according to IEC 62132-1. The EMC test
board is provided with the appropriate measurement or monitoring points at which the DUT
response parameters can be measured. It controls the geometry and orientation of the DUT
relative to the active conductor and eliminates in the case of a closed version of the IC
stripline any connecting leads within the housing (these are on the backside of the board,
which is outside the housing).
For the IC stripline, one of the 50 Ω ports is terminated with a 50 Ω load. The other 50 Ω port
is connected to the output of an RF disturbance generator. The injected RF disturbance signal
exposes the DUT to an electromagnetic field determined by the injected power, the typical
impedance and the distance between the ground plane of the EMC test board and the active
conductor of the IC stripline. The relationship is given in Annex A.
Rotating the EMC test board in the four possible orientations in the aperture to accept EMC
test board of the IC stripline will affect the sensitivity of the DUT. Dependent upon the DUT,
the response parameters of the DUT may vary (e.g. a change of current consumption,
deterioration in function performance, waveform jitter). The intent of this test method is to
provide a quantitative measure of the RF immunity of DUTs for comparison or other purposes.
For further information see Annex A.
5 Test conditions
5.1 General
The test conditions shall meet the requirements as described in IEC 62132-1:2006, Clause 4.
In addition, the following test conditions shall apply.

– 8 – 62132-8  IEC:2012
5.2 Supply voltage
The supply voltage shall be as specified by the IC manufacturer. If the users of this procedure
agree to other values, they shall be documented in the test report.
5.3 Frequency range
The effective frequency range of this radiated immunity procedure is 150 kHz to 3 GHz.
6 Test equipment
6.1 General
The test equipment shall meet the requirements described in IEC 62132-1:2006, Clause 5. In
addition, the following test equipment requirements shall apply.
6.2 Cables
Double shielded or semi-rigid coaxial cable may be required depending on the local ambient
conditions.
6.3 Shielding
Testing in a shielded room is only necessary for the open IC stripline version. The closed
version of the IC stripline is shielded by its housing.
6.4 RF disturbance generator
An RF disturbance generator with sufficient power handling capabilities shall be used. The RF
disturbance generator may comprise an RF signal source with a modulation function, an RF
power amplifier. The voltage standing wave ratio (VSWR) at the output of the RF disturbance
generator shall be less than 1,5 over the frequency range being measured.
The gain (or attenuation) of the RF disturbance generating equipment, without the IC stripline,
shall be known with an accuracy ±0,5 dB.
6.5 IC stripline
The IC stripline (open or closed version) used for this test procedure shall be fitted with an
aperture to mate with the EMC test board. The IC stripline shall not exhibit higher order
modes over the frequency range being measured. For this procedure, the IC stripline
frequency range is 150 kHz to 3 GHz. The VSWR over the frequency range of the empty IC
stripline being measured shall be less than 1,25.
For further information as to field strength determination, IC stripline designs and the
limitation of geometrical dimensions of closed version, see Annexes A, B and C.
Ω termination
6.6 50
A 50 Ω termination with a VSWR less than 1,1 and sufficient power handling capabilities over
the frequency range of measurement is recommended for the IC stripline 50 Ω port not
connected to the RF disturbance generator.
6.7 DUT monitor
The performance of the DUT shall be monitored for indications of performance degradation.
The monitoring equipment shall not be adversely affected by the injected RF disturbance
signal.
62132-8  IEC:2012 – 9 –
7 Test setup
7.1 General
A test setup shall meet the requirements described in IEC 62132-1:2006, Clause 6. In
addition, the following test setup requirements shall apply.
7.2 Test configuration
See Figure 1 for IC stripline test configurations. One of the IC stripline 50 Ω ports is
terminated with a 50 Ω load. The other IC stripline 50 Ω port is connected to the output port of
the RF disturbance generator.
DUT monitor/
RF generator Power supply
stimulation
RF amplifier
P
forward
Power meter EMC test
board
P Port 2
reverse
(RF connector)
Directional
coupler
Port 1
(RF connector) 50 Ω
termination
DUT
IC stripline
IEC  1181/12
Figure 1 – IC stripline test setup
For further information and cross section view of IC stripline see Annex B.
7.3 EMC test board (PCB)
The EMC test board shall be designed in accordance with the requirements in IEC 62132-1.
8 Test procedure
8.1 General
Test procedure shall be in accordance with IEC 62132-1:2006, Clause 7, except as modified
herein. These default test conditions are intended to assure a consistent test environment.
The following steps shall be performed:
a) Operational check (see 8.2)
b) Immunity measurement (see 8.3)
If the users of this procedure agree to other conditions, they shall be documented in the test
report.
– 10 – 62132-8  IEC:2012
8.2 Operational check
Energize the DUT and complete an operational check to verify proper function of the device
(i.e. run DUT test code) in the ambient test condition. During the operational check, the RF
disturbance generator and any monitoring equipment shall be powered; however, the output
of the RF disturbance generator shall be disabled. The performance of the DUT shall not be
degraded by ambient conditions.
8.3 Immunity measurement
8.3.1 General
With the EMC test board energized and the DUT operated in the intended test mode, measure
the immunity to the injected RF disturbance signal over the desired frequency range.
8.3.2 RF disturbance signal
The RF disturbance signal may be:
• CW (continuous wave, no modulation)
• sinusoidal modulated with 80 % amplitude modulated by a 1 kHz sine wave, and
• pulse modulated with 50 % duty cycle and 1 kHz pulse repetition rate.
8.3.3 Test frequency steps and ranges
The RF immunity of the DUT is generally evaluated in the frequency range from 150 kHz to
3 GHz. The frequencies to be tested shall be generated from the requirements specified in
Table 1.
Table 1 – Frequency step size versus frequency range
Frequency range (MHz) 0,15 – 1 1 – 100 100 – 1000 1000-3000
Linear steps (MHz)
≤0,1 ≤1 ≤10 ≤20
Logarithmic steps
≤5 % increment
In addition, the RF immunity of the DUT shall be evaluated at critical frequencies. Critical
frequencies are frequencies that are generated by, received by, or operated on by the DUT.
Critical frequencies include but are not limited to crystal frequencies, oscillator frequencies,
clock frequencies, data frequencies, etc.
8.3.4 Test levels and dwell time
The applied test level shall be increased in steps until a malfunction is observed or the
maximum signal generator setting (test level) is reached. The step size and test level shall be
documented in the test report.
At each test level and frequency, the RF disturbance signal shall be applied for the time
necessary for the DUT to respond and the monitoring system to detect any performance
degradation (typically 1 s).
8.3.5 DUT monitoring
The performance of the DUT shall be monitored for indications of performance degradation
using suitable test equipment. The monitoring equipment shall not be adversely affected by
the injected RF disturbance signal.

62132-8  IEC:2012 – 11 –
8.3.6 Detail procedure
8.3.6.1 Field strength determination
At each frequency to be tested, the signal generator setting to achieve the desired electric
field level or levels shall be determined as described in Annex A.
8.3.6.2 Immunity measurement
The test flow, including major steps, is described below. One of two strategies can be
employed in performing this measurement as follows:
a) The output of the RF disturbance generator shall be set at a low value (e.g. 20 dB below a
desired upper limit) and slowly increased up to the desired limit while monitoring the DUT
for performance degradation. Any performance degradation at or below the desired limit
shall be recorded.
b) The output of the RF disturbance generator shall be set at the desired performance limit
while monitoring the DUT for performance degradation. Any performance degradation at
the desired limit shall be recorded. The output of the RF disturbance generator shall then
be reduced until normal function returns. This level shall also be recorded.
NOTE The DUT can respond differently to each of the above methods. In such a case, a method in which the
interference signal is ramped up as well as down can be required. Additionally, in some cases, it might be
necessary to reset or restart the DUT to come back to proper operation.
The RF immunity measurement shall be performed for at least two orientations (0°, 90°). If
necessary the other orientations 180° and 270° should be tested too. The first measurement
is made with the EMC test board mounted in an arbitrary orientation in the IC stripline
aperture to accept EMC test board. The second measurement is made with the EMC test
board rotated 90 degrees from the orientation in the first measurement. For each of the third
and fourth measurements, the EMC test board is rotated again to ensure immunity is
measured in all four possible orientations. The results and their tested orientations shall be
documented in the test report.
9 Test report
The test report shall be in accordance with the requirements of IEC 62132-1:2006, Clause 8.
10 RF immunity acceptance level
The RF immunity acceptance level of a DUT, if any, is to be agreed upon between the
manufacturer and the user of the DUT and can be defined also differently for special
frequency bands.
– 12 – 62132-8  IEC:2012
Annex A
(normative)
Field strength determination
A.1 General
The signal level setting of the RF disturbance generator required to achieve the desired
electric field level within the IC stripline shall be determined in accordance with this procedure.
This measurement shall be performed at each standard frequency (either linear or logarithmic
as used in the actual test) as specified in 8.3.1. The RF disturbance signal shall be a CW
signal (i.e. no modulation shall be applied).
A.2 Characteristic impedance of stripline arrangements
The nominal, characteristic impedance of an open version of IC stripline can be calculated as
follows [3], if 1 < w/h ≤ 10
120 ×π
Z = (A.1)
w h h
 
+ 2,42 − 0,44× + 1−
 
h w w
 
Where
Z = characteristic impedance [Ω], typically 50 Ω
w = width [m] of active conductor (see Figure A.1)
h = height [m] between surfaces of the active conductor and ground plane (see Figure A.1)

Side view
Active conductor
h
Ground plane
Top view
Ground plane
w Active conductor
IEC  1182/12
Figure A.1 – Definition of height (h) and width (w) of IC stripline
For the closed version of the IC stripline the influence of housing has to be taken into account.
This correction depends on the housing geometry. For spherical housing surface an analytical
formula for the characteristic impedance cannot be provided, empirical investigations are
necessary. The characteristic impedance of those stripline arrangements have to be verified
by measurement.
62132-8  IEC:2012 – 13 –
A.3 Field strength calculation
The RF disturbance applied at the input to the IC stripline is related to the electromagnetic
field by the distance between the active conductor and the ground plane of the EMC test
board.
 
IC stripline
H E
DUT
Ground plane
50 Ω 50 Ω
≈≈
IEC  1183/12
Figure A.2 – EM field distribution
P × Z
E = (A.2)
h
Where
E = electric field strength [V/m] within the IC stripline
Z = characteristic impedance [Ω], nominal value
P = measured forward test power [W]
h = height [m] between the surfaces of active conductor and ground plane of the EMC
test board
Tests with closed and open version of IC stripline, both with an impedance of 50 Ω, have
shown that slightly different coupling between IC stripline versions and DUT appears. The
deviation is in the range of approximately 0,5 dB to 1 dB [4]. In practice, this offset can be
neglected for proposed geometrical dimensions of the IC stripline as given in Annex B. For
any other geometrical dimension, the active conductor width of closed version shall not be
less than 70% of the width of the referring open version as described in Annex C.
A.4 Verification of IC stripline RF characteristic
For verification of the IC stripline RF characteristic, the VSWR value of the empty IC stripline
with 50 Ω load termination at the second port shall be measured and documented in the test
report. The value shall be lower than 1,25.
In addition, it is recommended to check also the DUT loaded IC stripline. In accordance to
IEC 61000-4-20, IC stripline resonances with DUT shall be considered, with DUT power off.
 P 
P
output
refl
 
A = 10 × log + ≤ 1dB (A.3)
tloss
 
P P
fwd fwd
 
Where
A = Transmission loss of loaded IC stripline [dB]
tloss
– 14 – 62132-8  IEC:2012
P = reflected power at input port [W]
refl
P = forward power at input port [W]
fwd
P = measured power at output port [W]
output
Measurements carried out at frequencies where the VSWR and losses exceed the maximum
tolerated values shall be ignored.

62132-8  IEC:2012 – 15 –
Annex B
(normative)
IC stripline descriptions
B.1 IC stripline
The IC stripline offers a broadband method of measuring either immunity of a DUT to fields
generated within the IC stripline or radiated emission from a DUT placed within the IC stripline.
It eliminates the use of conventional antennas with their inherent measurement limitations of
bandwidth, non-linear phase, directivity and polarization. The IC stripline is a special kind of
transmission line that propagates a TEM wave. This wave is characterized by transverse
orthogonal electric (E) and magnetic (H) fields, which are perpendicular to the direction of
propagation along the length of the IC stripline or transmission line. This field simulates a
planar field generated in free space with impedance of 377 Ω. The TEM mode has no low
frequency cut-off. This allows the IC stripline to be used at frequencies as low as desired. The
TEM mode also has linear phase and constant amplitude response as a function of frequency.
This makes it possible to use the IC stripline to generate or detect a field intensity in a defined
way. The upper useful frequency for an IC stripline is limited by distortion of the test signal
caused by resonances and multi-moding that occur within the IC stripline. These effects are a
function of the physical size and shape of the IC stripline.
The IC stripline is of a size and shape, with impedance matching at the input and output feed
points of the IC stripline that limits the VSWR to less than 1,25 up to its rated frequency. In
principle there are two versions of IC stripline possible – open and closed version. The open
version uses the common stripline configuration (Figure B.1). At the closed version a
shielding case is added (Figure B.2). To get the same characteristic impedance for the closed
version as the one for the open version with the same height of active conductor, the width
needs to be reduced to keep the 50 Ω characteristic impedance. The correct width value
depends on the shape of the housing. As long as the 50 Ω characteristic impedance is kept
for both versions the electric field strength conditions can be calculated by Equation A.2 and
corrected if necessary as described in Annex C.
The active conductor of the IC stripline is tapered at each end to adapt to conventional 50 Ω
coaxial connectors. The requested EMC test board can be based on a TEM cell board
according to IEC 62132-1. The first resonance is demonstrated by a high VSWR over a
narrow frequency range. An IC stripline verified for field generation to a maximum frequency
will also be suitable for emission measurements to this frequency.

RF DUT IC stripline EMC test
connector board
active conductor
IEC  1184/12
Figure B.1 – Cross section view of an example of an open IC stripline

– 16 – 62132-8  IEC:2012
RF IC stripline
EMC test
IC stripline
connector housing
board
active conductor
DUT
IEC  1185/12
Figure B.2 – Cross section view of an example of a closed IC stripline
The maximum usable DUT size is limited by the IC stripline dimensions. The ratio of DUT
package height to IC stripline height is recommended to one third but shall not exceed one
half according to IEC 61000-4-20. In x-y dimension the package shall not exceed the width of
active conductor by more than 10 %.
NOTE 3 D field simulations of a IC stripline setup with a DUT, whose package size exceeds the width of the
active conductor by 10 % at a half of active conductor height, have shown that a uniform field (not more than +0 dB
and not less than -3 dB) is still present at the DUT beyond the active conductor edge [4].
The limitation values for the 6,7 mm IC stripline for example are given in Tables B.1 and B.2.
Table B.1 – Maximum DUT dimensions for 6,7 mm IC stripline (Open version)
Active conductor 6,7 mm DUT
IC stripline open version
z dimension (height) 6,7 mm
≤3,35 mm
x-y dimension (width) 33 mm
≤36,3 mm
Table B.2 – Maximum DUT dimensions for 6,7 mm IC stripline (Closed version)
Active conductor 6,7 mm DUT
IC stripline closed version
z dimension (height) 6,7 mm ≤3,35 mm
x-y dimension (width) 24 mm
≤26,4 mm
B.2 Example for IC stripline arrangement
An example for IC stripline with housing is given in Figure B.3. The housing x-y dimensions
are defined by the used EMC test board (IEC 62132-1: 100 mm × 100 mm). The housing in z
direction should be as far as possible from the active conductor but avoid resonances and
multi-moding in the frequency range of interest.

62132-8  IEC:2012 – 17 –
EMC test
IC stripline
board
Optional housing
50 Ω port
(RF connector)
IEC  1186/12
Figure B.3 – Example of IC stripline with housing

– 18 – 62132-8  IEC:2012
Annex C
(informative)
Closed stripline geometrical limitations

An open version of IC stripline with any conductor height is designed to realize a
characteristic wave impedance of Z = 50 Ω. By adding a shielding, an additional partial
stripline capacitance arises and therefore the width of the active conductor has to be reduced
to keep impedance Z = 50 Ω. This reduction of the width of the active conductor is limited in
order to achieve comparable field levels in open and closed version of IC stripline. As
distance of shielding is controlled by the reduction of the width of the active conductor and the
geometrical shape of shielding, the distance of shielding is limited accordingly.
In the case of open version of IC stripline, only one grounded plane parallel to active
conductor is used. Back current occurs in this plane. In the case of referring closed version,
second grounded plane is added (shielding). Back current occurs in both planes, fractions
depend on chosen geometries.
H-fields at location of DUT are superposed. In the case of open version they are generated by
current flow located in active conductor (quasi-static approach) and due to mirrored current at
grounded bottom plane. In the case of referring closed version, mirroring has to be done at
grounded bottom and shielding planes, resulting in a convergent infinite series of H-fields [5].
Compare Figure C.2 and Formula (C.2). Reducing width of active conductor results in
increasing levels of current density and therewith increasing H-field at location of DUT in the
case of considering only field generated by current at the location of the active conductor.
Coexistent, H-field level at location of DUT is overally reduced due to superposing effects of
mirrored currents as second grounded plane above active conductor is added. Effects
eliminate each other approximately in the case of limited geometrical setups with a limitation
of active conductor width. To achieve negligible field differences of setups, active conductor
width of closed version should not be reduced to less than approximate 70% of referring open
version as shown below. As impedance Z = 50 Ω has to be achieved, this yields accordingly in
limitation of usable heights of shielding. Values of heights of shielding are depending on used
geometrical shape of shielding. Shifting shielding very close to active conductor (referring to
highly reducing width of active conductor) and keeping distance of active conductor to DUT
constant would result in high fraction of back current in shielding. Distance of active conductor
to DUT is far greater than to shielding. Therewith, H-fields at location of DUT would largely
cancel each other and different field behaviour would be achieved compared to the open
version of IC stripline.
H-field generated by current at active conductor as band conductor at distance of DUT which
is located centrically close to bottom plane is calculated from Formula (C.1). H-fields of
mirrored currents are calculated accordingly and superposed. In the case of the closed
version, convergent infinite series result. See Formula (C.2).
J × t
 w/ 2 
(C.1)
H , = arcsinh
 
septum DUT
π a
 
Where
J = current density
t = active conductor thickness
w = active conductor width
a = perpendicular distance of active conductor to centrically placed DUT

62132-8  IEC:2012 – 19 –

   
w / 2 w / 2
   
H = H (J ) arcsinh + arcsinh −

sin gle
   
h − x h + x
 bottom bottom
   

   
w / 2 w / 2
   
arcsinh − arcsinh +
(C.2)
   
h − x + 2× h h + x + 2× h
bottom shielding bottom shielding
   
   
w / 2 w / 2
   
arcsinh + arcsinh −
   
h − x + 2× h + 2× h h + x + 2× h + 2× h
bottom shielding bottom bottom shielding bottom
   
... + ... ]
Where
J = current density
w = active conductor width
h ,h = perpendicular distance of active conductor to bottom/ shielding
bottom shielding
x = distance of centrically placed DUT to bottom
Current distribution is assumed to be homogeneous; therewith density J increases by
w w in the case of reducing width of active conductor.
open/ closed
Resulting H-field of closed version at location of DUT is referenced to resulting H-field of
referring open version of IC stripline. In the following, active conductor height of
h = 6,7 mm is regarded. Active conductor width is reduced to fractions of width of
bott
...