IEC 62258-1:2005

INTERNATIONAL IEC
STANDARD 62258-1
First edition
2005-08
Semiconductor die products –
Part 1:
Requirements for procurement and use

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INTERNATIONAL IEC
STANDARD 62258-1
First edition
2005-08
Semiconductor die products –
Part 1:
Requirements for procurement and use

 IEC 2005  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale W
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
For price, see current catalogue

– 2 – 62258-1  IEC:2005(E)
CONTENTS
FOREWORD.5

INTRODUCTION .7

1 Scope .8

2 Normative references.8

3 Terms and definitions.9

3.1 Basic definitions .9

3.2 General terminology.9
3.3 Semiconductor manufacturing and interconnection terminology .11
4 General requirements .12
4.1 General .12
4.2 Identity .13
4.3 Source.13
4.4 Function .13
4.5 Electrical and physical characteristics .13
4.6 Geometry.13
4.7 Connectivity.13
4.8 Documentation .13
4.9 Test and quality .13
4.10 Handling .13
4.11 Assembly.13
4.12 Thermal data .13
4.13 Models .14
5 Data exchange.14
6 Requirements for bare die with and without connection structures .14
6.1 Form of supply.14
6.2 Die name.14
6.3 Die version .14
6.4 Manufacturer .14
6.5 Type number .14
6.6 Function .14
6.7 Information source.14

6.8 Data version .14
6.9 Units of measurement.14
6.10 Geometric view.14
6.11 Die size .15
6.12 Die thickness .15
6.13 Geometric origin .15
6.14 Dimension tolerances .15
6.15 Pad count .15
6.16 Pad information .15
6.17 Signal type.15
6.18 Technology.15
6.19 Semiconductor material .15
6.20 Substrate material .15
6.21 Substrate connection .16

62258-1 IEC:2005(E) – 3 –
6.22 Passivation material.16

6.23 Pad metallization .16

6.24 Backside finish .16

6.25 Wafer size .16

6.26 Wafer thickness.16

6.27 Wafer map.16

6.28 Power dissipation.16

6.29 Operating temperature.16

6.30 Packing .16

6.31 Supplier.16

6.32 Bump material .16
6.33 Bump size.17
6.34 Bump height tolerance .17
6.35 Connection material.17
6.36 Die picture .17
6.37 Die fiducials.17
7 Minimally packaged devices .17
7.1 General .17
7.2 Terminal position .17
7.3 Terminal size .17
7.4 Number of terminals .18
7.5 Package size .18
7.6 Seated height .18
7.7 Encapsulation material.18
7.8 Terminal material.18
7.9 Package style code.18
8 Test, quality and reliability.18
8.1 General .18
8.2 Outgoing quality level.18
8.3 Electrical parameters specified .18
8.4 Compliance to standards .18
8.5 Additional device screening.19
8.6 Reliability.19
8.7 Product status .19
9 Requirements for handling and shipping.19

9.1 General .19
9.2 Specific requirements for bare die or wafers - Die version .20
9.3 Specific requirements for wafers - Product grading.20
9.4 Special item requirements.20
10 Requirements for storage.21
10.1 General .21
10.2 Storage duration and conditions .21
10.3 Long-term storage .21
11 Information related to assembly .21
11.1 General .21
11.2 Attach methods and materials .21
11.3 Bonding method and materials .22

– 4 – 62258-1  IEC:2005(E)
Annex A (informative) Terminology.23

A.1 Assembly terminology .23

A.2 Test terminology .23

A.3 Semiconductor terminology .25

A.4 Semiconductor assembly technology.27

A.5 Design and simulation terminology .28

A.6 Packing and delivery terminology .31

A.7 Handling terminology .32

Annex B (informative) Acronyms.33
B.1 Organizations and standards.33
B.2 General terminology.33
B.3 Manufacturing and test terminology.34
B.4 Semiconductors .35
B.5 Design, simulation and data exchange .35
B.6 Electronic technology.36
B.7 Packaging.37

Bibliography .38

62258-1 IEC:2005(E) – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION

____________
SEMICONDUCTOR DIE PRODUCTS –
Part 1: Requirements for procurement and use

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
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between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.

International Standard IEC 62258-1 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47/1820/FDIS 47/1832/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 6 – 62258-1  IEC:2005(E)
IEC 62258, as currently conceived, consists of the following parts, under the general title
Semiconductor die products:
Part 1: Requirements for procurement and use

Part 2: Exchange data formats

Part 3: Recommendations for good practice in handling, packing and storage (Technical
Report)
Part 4: Questionnaire for die users and suppliers (Technical Report)

Part 5: Requirements for information concerning electrical simulation

Part 6: Requirements for information concerning thermal simulation
Further parts may be added as required.
A bilingual version of this publication may be issued at a later date.
The committee has decided that the contents of this publication will remain unchanged until the
maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
___________
To be published.
In preparation.
62258-1 IEC:2005(E) – 7 –
INTRODUCTION
th
This International Standard is based on the work carried out in the ESPRIT 4 Framework
project GOOD-DIE which resulted in the publication of the ES59008 series of European

specifications. Organizations that helped prepare this standard include the ESPRIT GOOD-DIE

project, The Die Products Consortium, JEITA, JEDEC and ZVEI.

– 8 – 62258-1  IEC:2005(E)
SEMICONDUCTOR DIE PRODUCTS –
Part 1: Requirements for procurement and use

1 Scope
This part of IEC 62258 has been developed to facilitate the production, supply and use of

semiconductor die products, including
– wafers,
– singulated bare die,
– die and wafers with attached connection structures,
– minimally or partially encapsulated die and wafers.
This standard defines the minimum requirements for the data which are needed to describe
such die products and is intended as an aid in the design of and procurement of assemblies
incorporating die products. It covers the requirements for data, including
– product identity,
– product data,
– die mechanical information,
– test, quality, assembly and reliability information,
– handling, shipping and storage information.
This standard covers the specific requirements for data needed to describe the geometrical
properties of die, their physical properties and the means of connection necessary for their use
in the development and manufacture of products. It also contains, in Annexes A and B,
terminology and a list of common acronyms, respectively.
2 Normative references
The following referenced documents are indispensable for the application of this document. For
dated references, only the edition cited applies. For undated references, the latest edition of
the referenced document (including any amendments) applies.
IEC 60191-4:1999, Mechanical standardization of semiconductor devices – Part 4: Coding
system and classification into forms of package outlines for semiconductor device packages
Amendment 1 (2001)
Amendment 2 (2002)
IEC 61360-1:2002, Standard data element types with associated classification scheme for
electric components – Part 1: Definitions – Principles and methods
IEC 62258-2, Semiconductor die products – Part 2: Exchange data formats
ISO 14644-1:1999, Cleanrooms and associated controlled environments – Part 1: Classification
of air cleanliness
___________
3 To be published.
62258-1 IEC:2005(E) – 9 –
3 Terms and definitions
For the purposes of this document, the following terms apply.

NOTE 1 All terms defined here are in addition to relevant terms defined in IEC 60050: International

Electrotechnical Vocabulary.
NOTE 2 Additional terms and acronyms are given for information in Annexes A and B.

3.1 Basic definitions
3.1.1
die (singular or plural)
separated piece(s) of semiconductor wafer that constitute(s) a discrete semiconductor or whole
integrated circuit
3.1.2
wafer
slice or flat disc, either of semiconductor material or of such a material deposited on a
substrate, in which devices or circuits are simultaneously processed and which may be
subsequently separated into die
3.1.3
singulated die
individual and distinct die which have been separated from the wafer
3.1.4
bare die
unpackaged discrete semiconductor or integrated circuit with pads on the upper surface
suitable for interconnection to the substrate or package
3.1.5
bare die with connection structures
unpackaged die that have had added bumps, lead frames or other terminations to interconnect
for electrical attachment
NOTE Typically these can be die that have had solder or other metallic bumps added to the metallized pads on the
die in the form of peripheral bumps or arrays (also known as flip-chip) or die that have had fine leads attached to
the metallized pads on the die known as TAB.
3.1.6
minimally packaged die
MPD
die that have had some exterior packaging medium and interconnection structure added for
protection and ease of handling
NOTE This definition includes such packaging technologies as chip scale packages (CSP) in which the area of the
package is not significantly greater than the area of the bare die.
3.1.7
die device
bare die, with or without connection structures, or a minimally packaged die
3.2 General terminology
3.2.1
chip
common parlance for die
– 10 – 62258-1  IEC:2005(E)
3.2.2
chip scale package
chip size package
CSP
generic term for packaging technologies that result in a packaged part that is only marginally

larger than the internal die
3.2.3
discrete (semiconductor)
single two-, three- or four-terminal semiconductor device

NOTE Discrete semiconductors include such devices as individual diodes, transistors and thyristors.

3.2.4
hybrid (circuit)
module or encapsulated sub-assembly that comprises semiconductor die and printed or
otherwise attached passive components
NOTE Also see multi-chip module and multi-chip package.
3.2.5
known good die
KGD
qualification of a semiconductor die which indicates that the die has been tested to a specified
or determined level of quality or “goodness”
NOTE A commonly accepted definition of KGD is a die that has been tested and/or screened to quality levels that
are of the same order as those applicable to the equivalent packaged parts.
3.2.6
package
total assembly which protects one or more electronic components from mechanical, environ-
mental and electrical damage throughout its operational life and which provides means of
interconnection
3.2.7
packaging
process of assembling one or more electronic components into a package
NOTE The use of “packaging” as a participle (e.g. “When packaging ICs into dual-in-line packages …”) is
deprecated.
3.2.8
packing
material which is used to protect electronic items from mechanical, environmental and

electrical damage during transportation or storage and which is discarded prior to the
incorporation of the item into its end application
3.2.9
multi-chip module
MCM
module that contains two or more die and/or minimally packaged die
NOTE Also see hybrid and multi-chip package.
3.2.10
multi-chip package
MCP
package that contains two or more die and/or minimally packaged die
NOTE Also see hybrid and multi-chip module.

62258-1 IEC:2005(E) – 11 –
3.2.11
system in a package
SiP
multi-chip package (MCP) that performs a complete system function

3.2.12
multi-device sub-assembly
MDS
sub-system which consists of multiple electronic devices including at least one integrated

circuit
NOTE This is a generic term which includes, amongst others, hybrid, MCM, MCP and SiP.

3.2.13
pad
conducting feature on a die device forming a terminal to which external electrical connections
are made
NOTE For bare die without external connections, the pad acts as the terminal itself. For bumped die the terminal is
in the form of additional conducting material placed on a pad, whilst for die with attached lead frame the terminal is
in the form of a conductor connected to the pad and extending from the die.
3.3 Semiconductor manufacturing and interconnection terminology
3.3.1
mask
a) optical overlay used in photo-etching during the process of semiconductor fabrication
b) general term to refer to the major individual patterning stages that are used within the
fabrication process
3.3.2
layer
loose topological term used in describing the process of semiconductor fabrication
NOTE A layer consists of a specific material and a semiconductor device consists of many layers.
3.3.3
passivation
top or final processing and covering on a die, usually of semiconductor oxide or nitride, that
protects and seals the active areas of the die from further external chemical or mechanical
contamination
NOTE Bond pads require an opening in this passivation to allow electrical contact.
3.3.4
scribe line
scribe lane
area surrounding the die that is set aside on the wafer for the purposes of scribing and sawing
the die from the wafer
NOTE This feature may be covered by many other terms such as scribe street, saw lane, dicing lane, etc.
3.3.5
die separation
dicing
sawing
means by which individual die are cut from the wafer
NOTE Die separation is commonly performed by using a fine circular saw.
3.3.6
wire bonding
process of attaching interconnection wire or ribbon to a die

– 12 – 62258-1  IEC:2005(E)
3.3.7
bond pads
metallized areas on the die that are used for temporary or permanent electrical connection

(bonding)
3.3.8
bumps
raised metallized areas on the die that are used for temporary or permanent electrical

connection
3.3.9
lead frame
supporting structure upon which a die is mounted and which also includes the connection
structure to which the die is bonded
3.3.10
die attach
method and materials used to attach a die to a substrate
3.3.11
flip-chip
semiconductor die which is electrically and/or mechanically connected to an interconnection
structure in such a way that the active area faces the interconnection structure
3.3.12
interposer
material placed between two surfaces giving electrical insulation, mechanical strength and/or
controlled mechanical separation between the two surfaces
NOTE An interposer may be used as a means for redistributing electrical connections and/or allowing for different
thermal expansions between adjacent surfaces.
3.3.13
redistribution
process of moving terminals on die to more convenient positions by additional connectivity
layers or by the use of an interposer
4 General requirements
4.1 General
Suppliers of die devices shall furnish information which is necessary and sufficient for users of

the devices at all stages of design, procurement, manufacture and test of products containing
them. Details of the requirements are given below and in other parts of this standard. The form
in which the information may be supplied is covered in IEC 62258-2.
Whilst it is expected that much of the information supplied in conformance with this standard
will be in the public domain and available from sources such as manufacturers’ data sheets,
this specification does not place an obligation on a supplier to make information public. Any
information that a supplier considers to be proprietary or commercially sensitive may be
supplied under the terms of a non-disclosure agreement.
For further details of requirements, refer to Clauses 6, 7, 8, 9, 10 and 11.

62258-1 IEC:2005(E) – 13 –
4.2 Identity
All die devices shall have an identifier, consisting of one or more type designators, which shall

distinguish each die device from all other die devices and from equivalent packaged parts.

Such identifiers shall ensure the ability to distinguish among different versions of die which are

intended to perform the same or different functions.

4.3 Source
The source of supply for die devices shall be given with sufficient information for the customer

to communicate adequately with the supplier. If the die manufacturer is different from the

supplier, the identity of the manufacturer shall also be given.
4.4 Function
A description of the electrical function and performance variants of all die devices shall be
given.
4.5 Electrical and physical characteristics
Electrical characteristics covering limiting conditions of use and normal operating conditions
shall be given for all die devices. Technology of manufacture, including the materials used,
shall be given where necessary.
4.6 Geometry
All physical dimensions needed for layout and assembly of a product containing die devices
shall be given. These shall include dimensions of the die and the size, shape and position of all
terminals.
4.7 Connectivity
The electrical function of all terminals shall be given in such a way that the relationships
between electrical function and geometric position of the terminals are fully defined. Any
requirement for connection to the die substrate shall also be given.
4.8 Documentation
Data sheets containing all the information prescribed herein shall be provided. These may be
supplied as hard copy or in electronic form.
4.9 Test and quality
An indication of the expected quality level and information on device reliability shall be given.
4.10 Handling
Information necessary for handling of the die shall be provided, including, as appropriate,
details of the form in which the die are supplied and of the form of packing for shipment and
recommendations for ESD protection.
4.11 Assembly
Information and recommendations for assembly of the die shall be provided.
4.12 Thermal data
Thermal properties needed for thermal modelling of the die device shall be given.

– 14 – 62258-1  IEC:2005(E)
4.13 Models
The availability of any models for simulation or test of the die device shall be stated.

5 Data exchange
It is recommended that data intended for exchange by electronic means should be formatted in
accordance with the provisions of IEC 62258-2 and IEC 61360-1.

6 Requirements for bare die with and without connection structures

6.1 Form of supply
The physical form in which the die or wafers are supplied shall be stated, whether as singulated
die, sawn or unsawn wafers and with or without connection structures or minimal packaging.
6.2 Die name
The name given by the manufacturer to identify the die shall be the one used.
6.3 Die version
The revision or step code to identify the mask version or revision used in production of the die
shall be given.
6.4 Manufacturer
The identity of the firm responsible for manufacture of the die or wafer shall be given.
6.5 Type number
The type number or device name given by the manufacturer to identify the finished die as
supplied to the customer shall be given.
6.6 Function
A basic description of the electrical function performed by the device shall be provided.
6.7 Information source
The identity of the organization or individual responsible for creating the data set shall be given.

6.8 Data version
The version and/or date of creation of the data set shall be given.
6.9 Units of measurement
The units in which die and pad dimensions are given shall be stated. For data exchange using
IEC 61360-1, all dimensions shall be given in metres.
6.10 Geometric view
A statement shall be made as to whether the die is viewed from the top (active side upwards)
or bottom (active side downwards). The preferred view is from the top.

62258-1 IEC:2005(E) – 15 –
6.11 Die size
The maximum length and width of the die shall be given:

a) for bare die these are the maximum dimensions after sawing;

NOTE If these are not available, the step-and-repeat dimensions shall be given.

b) for wafers these are the step-and-repeat dimensions.

6.12 Die thickness
The maximum thickness of the finished die shall be given.

6.13 Geometric origin
The coordinates of a reference position on the die with respect to the geometric centre of the
die surface shall be given. This forms the origin of the coordinate system with respect to which
the position of die features, such as pad positions, are referenced.
6.14 Dimension tolerances
Tolerances for die size, die thickness, pad dimensions and pad positions should be given.
6.15 Pad count
The number of separate pads on the die shall be stated.
6.16 Pad information
For each pad on the die, the following information shall be given:
a) position – the coordinates of the geometric centre of the pad with respect to the geometric origin;
b) shape – the shape and associated dimensions of the pad at that position;
c) orientation – the orientation of the pad with respect to a reference direction on the die;
d) signal name – the name of the signal or supply connection made to the pad.
6.17 Signal type
The type of signal, power supply or other connection to each pad (input, output, supply voltage,
no connect, etc.) shall be stated.

6.18 Technology
The technology of manufacture of the semiconductor device, for example CMOS, BiCMOS,
bipolar etc., shall be stated
6.19 Semiconductor material
The type of active semiconductor material used in fabricating the die should be stated.
6.20 Substrate material
Where the die is fabricated using a different material as substrate to support the active
semiconductor material, the type of this material should be stated.

– 16 – 62258-1  IEC:2005(E)
6.21 Substrate connection
Any requirements for connection to the substrate of the die to ensure that the material is

correctly biased shall be given and it shall be made clear whether a substrate connection is

obligatory, optional or forbidden.

6.22 Passivation material
The material used in the final passivation layer on the surface of the die for protection and
insulation should be stated.
6.23 Pad metallization
The material used for the metallization on the die over that part of the surface which includes
the bonding pads should be stated.
6.24 Backside finish
For a die intended for wire bonding, details of any surface finish and plating applied to a die on
the surface where it is attached to the mounting surface shall be given.
6.25 Wafer size
If the die are supplied in wafer form, the diameter of the wafer shall be given.
6.26 Wafer thickness
If the die are supplied in wafer form, the thickness of the wafer shall be given.
6.27 Wafer map
If the die are supplied in the form of a tested wafer, information shall be supplied to enable the
user to identify individual good and reject die devices or grades of device.
6.28 Power dissipation
Either the power dissipation within the die or the operating supply current at nominal operating
voltage under stated normal operating conditions shall be provided.
NOTE If figures for both typical and maximum power dissipation are available, both should be given.
6.29 Operating temperature
The range of operating temperatures of the die over which the device will operate according to
its published specifications shall be given.
6.30 Packing
Information on the packing used to protect the die or wafers during handling, shipment and
storage shall be given.
6.31 Supplier
The identity of the supplier of the die when this is different from the die manufacturer shall be
stated.
6.32 Bump material
For bumped die, the material used in forming the bumps shall be stated.

62258-1 IEC:2005(E) – 17 –
6.33 Bump size
For bumped die, the height perpendicular to the die surface shall be given. In addition, shapes

of the bumps and their dimensions parallel to the die surface should also be given.

6.34 Bump height tolerance
For bumped die, the tolerance on the height of the bumps should be given.

6.35 Connection material
For die with attached connection structures (other than bumped die), the material from which

the connection structures are made should be stated.
6.36 Die picture
A drawing or photograph of the die which shows the relative positions of the pads, bumps or
lead frame connections should be supplied.
NOTE Die pictures may be supplied as files in a suitable graphic format.
6.37 Die fiducials
Information should be given on identifying marks on the die that serve to assist in its
differentiation from other die and in orientation for mounting.
7 Minimally packaged devices
7.1 General
The information described in the following subclauses is required in addition to any relevant
information as defined in Clause 6. Where appropriate, reference should be made to standard
package outline styles in IEC 60191-4 or in corresponding national standards.
7.2 Terminal position
Information shall be given which will allow the user to determine the position of all terminals on
the device.
Where the terminals are not in a regular rectangular array, the information shall be in the form
of a list of the coordinates of the geometric centres of all terminals with respect to the
geometric origin.
Where information is not given in this form and where terminals are in a regular rectangular
array, the information shall be given in such a form that there is sufficient information to deduce
the geometric position of every terminal in the array:
a) terminal pitch – the distance between the centres of adjacent terminals. If the pitch is
different for the length and width directions, both values shall be given;
b) terminal pattern – the pattern of occupied terminal positions shall be given either by an
associated diagram or other representation.
7.3 Terminal size
The following information shall be given:
a) for ball- or column-grid arrays, the nominal diameter of the terminals;
b) for non-leaded packages, the dimensions of the effective footprint area on the mounting
surface.
– 18 – 62258-1  IEC:2005(E)
7.4 Number of terminals
The number of terminal positions and the number of actual terminals shall be given. Where

terminals are disposed over a rectangular array, or along the edges of a rectangular package,

the numbers of terminal positions in each of the length and width directions shall also be given.

7.5 Package size
The maximum length and width of the package shall be given.

7.6 Seated height
The maximum seated height of the packaged device when mounted shall be given.
7.7 Encapsulation material
The type of material used for the outer coating or encapsulation of the device shall be stated.
7.8 Terminal material
The type of material and/or finish used for the terminals shall be stated.
7.9 Package style code
The package style code in accordance with IEC 60191-4 shall be given.
8 Test, quality and reliability
8.1 General
Test, quality and reliability information, if deemed sensitive, may be subject to a non-disclosure
agreement (NDA) between supplier and vendor.
8.2 Outgoing quality level
8.2.1 General
Information shall be given on the outgoing quality level of the die product. This may, for
example, be expressed as defects per million (dpm), acceptable quality level (
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