IEC 62047-7:2011

IEC 62047-7 ®
Edition 1.0 2011-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 7: MEMS BAW filter and duplexer for radio frequency control and selection

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 7: Filtre et duplexeur BAW MEMS pour la commande et le choix des
fréquences radioélectriques
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IEC 62047-7 ®
Edition 1.0 2011-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 7: MEMS BAW filter and duplexer for radio frequency control and selection

Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 7: Filtre et duplexeur BAW MEMS pour la commande et le choix des
fréquences radioélectriques
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX U
ICS 31.080.99 ISBN 978-2-88912-537-1

– 2 – 62047-7  IEC:2011
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 General terms . 6
3.2 Related with BAW filter . 7
3.3 Related with BAW duplexer . 9
3.4 Characteristic parameters . 10
3.4.1 BAW resonator . 10
3.4.2 BAW filter and duplexer . 13
3.4.3 Temperature characteristics . 16
4 Essential ratings and characteristic parameters . 16
4.1 Resonator, filter and duplexer marking . 16
4.2 Additional information . 17
5 Test methods . 17
5.1 Test procedure . 17
5.2 RF characteristics . 19
5.2.1 Insertion attenuation, IA . 19
5.2.2 Return attenuation, RA . 20
5.2.3 Bandwidth . 21
5.2.4 Isolation . 21
5.2.5 Ripple . 22
5.2.6 Voltage standing wave ratio (VSWR) . 22
5.2.7 Impedances of input and output . 23
5.3 Reliability test method . 23
5.3.1 Test procedure . 23
Annex A (informative) Geometries of BAW resonators . 25
Annex B (informative) Operation of BAW resonators . 26
Bibliography . 28

Figure 1 – Basic structure of BAW resonator . 7
Figure 2 – Topologies for BAW filter design . 8
Figure 3 – Frequency responses of ladder and lattice type BAW filters . 8
Figure 4 – An example of BAW duplexer configuration . 9
Figure 5 – Equivalent circuit of BAW resonator (one-port resonator) . 10
Figure 6 – Measurement procedure of BAW filters and duplexers . 18
Figure 7 – Electrical measurement setup of BAW resonators, filters and duplexers . 19
Figure 8 – Insertion attenuation of BAW filter . 20
Figure 9 – Return attenuation of BAW filter . 21
Figure 10 – Isolation (Tx-Rx) of BAW duplexer . 22
Figure 11 – Ripple of BAW filter . 22
Figure 12 – Smith chart plot of input and output impedances of BAW filter . 23
Figure 13 – Block diagram of a test setup for evaluating the reliability of BAW
resonators and filters . 24

62047-7  IEC:2011 – 3 –
Figure A.1 – Geometry comparison of BAW resonators . 25
Figure B.1 – Modified BVD (Butterworth-Van Dyke) equivalent circuit model . 27

– 4 – 62047-7  IEC:2011
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 7: MEMS BAW filter and duplexer
for radio frequency control and selection

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
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indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-7 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/79/FDIS 47F/87/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

62047-7  IEC:2011 – 5 –
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The “colour inside” logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this publication using a colour printer.

– 6 – 62047-7  IEC:2011
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 7: MEMS BAW filter and duplexer
for radio frequency control and selection

1 Scope
This part of IEC 62047 describes terms, definition, symbols, configurations, and test methods
that can be used to evaluate and determine the performance characteristics of BAW resonator,
filter, and duplexer devices as radio frequency control and selection devices. This standard
specifies the methods of tests and general requirements for BAW resonator, filter, and
duplexer devices of assessed quality using either capability or qualification approval
procedures.
2 Normative references
Void.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1 General terms
3.1.1
bulk acoustic wave
BAW
acoustic wave propagating in a bulk body
3.1.2
BAW resonator
resonator employing bulk acoustic wave
NOTE BAW resonator consists of piezoelectric material between top and bottom electrodes, as shown in Figure 1.
The top and bottom electrodes which can be made to vibrate in a vertical direction of the deposited piezoelectric
film. The electrodes are either two air-to-solid interfaces or an acoustic Bragg reflector and an air-to-solid interface.
The former is often called the film bulk acoustic resonator (FBAR), and the latter is called the solidly-mounted
resonator (SMR).
62047-7  IEC:2011 – 7 –
Air-to-solid
Electrode Piezoelectric film
interface
AC power
supply
IEC  1211/11
Key
Layers of a piece of BAW resonator   Components to operate a BAW resonator
Electrode To provide electrical input to a body of AC power Electric power supply to vibrate a
piezoelectric film and electrical connections supply BAW resonator
with a external circuit
Piezoelectric Body layer of a kind of BAW resonator
film
Air to solid
interface
Figure 1 – Basic structure of BAW resonator
3.1.3
electrode
electrically conductive plate in proximity to or film in contact with a face of the piezoelectric
film by means of which a polarizing or driving field is applied to the element
[IEC/TS 61994-1, 3.21]
3.1.4
piezoelectric film
film which has piezoelectricity
NOTE Piezoelectric films can be distinguished as non-ferroelectric and ferroelectric materials. The non-
ferroelectric materials, such as AlN (aluminium nitride) and ZnO (zinc oxide) have low dielectric constant, small
dielectric loss, good hardness, and excellent insulating properties. Thus, they are good for microwave resonator
and filter applications. The ferroelectric materials, such as PZT (lead-zirconate-titanate) and PLZT (lead-
lanthanum-zirconate) have high dielectric constant, large dielectric loss, and fair insulating properties. Thus, they
are good for memory and actuator applications.
3.1.5
direct piezoelectric effect
effect which a mechanical deformation of piezoelectric material produces a proportional
change in the electric polarization of that material
3.1.6
converse (or reverse) piezoelectric effect
effect which mechanical stress proportional to an acting external electric field is induced in
the piezoelectric material
NOTE Converse piezoelectric effect is widely being used for acoustic wave resonators and filters, resonant
sensors, oscillators, ultrasonic wave generators, and actuators. Direct piezoelectric effect is usually applied for
various piezoelectric sensors and voltage generators.
3.2 Related with BAW filter
Figure 2 shows topologies for BAW filter design.

– 8 – 62047-7  IEC:2011
IEC  1212/11 IEC  1213/11
a) Ladder type b) Lattice type
Figure 2 – Topologies for BAW filter design
NOTE BAW resonators are connected in series and parallel for forming electrical filters, as shown in Figure 2.
The resonant frequencies of series and parallel resonators should be different to secure the bandwidth of the BAW
filter.
3.2.1
ladder filter
filter having a cascade or tandem connection of alternating series and shunt BAW resonators
NOTE BAW resonator connected in series should have slightly higher resonant frequency than that of a parallel
BAW resonator. The parallel resonant frequency of the parallel BAW resonator needs to be equal to the series
resonant frequency of the series BAW resonator in the filter geometry shown in Figure 2. It gives a steep roll-off,
but poor stop-band rejection characteristics as shown in Figure 3a). Thus, helper inductors are usually given to
improve the isolation, and in general, the out-of-band rejection far from the passband becomes worse.

Frequency Frequency
IEC  1214/11 IEC  1215/11
a) Ladder type   b) Lattice type
Figure 3 – Frequency responses of ladder and lattice type BAW filters
3.2.2
lattice filter
filter having two pairs of resonators electrically coupled in a bridge network, with one pair of
resonators in a series arm and the other pair in a shunt arm
[IEC 60862-1: 2003, 2.2.3.8 modified]
NOTE Lattice type filter need more resonators than ladder type one, sine it needs two resonators to synthesize
one pole and one transmission zero from the transfer function. The pass-band is obtained when one pair of
resonators behaves inductive while the other pair of resonators behaves capacitive. Unlike the ladder type filter, it
gives a deep stop-band rejection and good power handling capability, but smooth roll-off characteristics as shown
in Figure 3 b).
Insertion attenuation  (dB)
Insertion attenuation  (dB)
62047-7  IEC:2011 – 9 –
3.2.3
helper inductor
inductor connected with shunt resonators of ladder BAW filter
3.3 Related with BAW duplexer
Figure 4 shows an example of BAW duplexer configuration.
Tx
BAW filter
Ant
Rx
TL
phase
IEC  1216/11
Key
Tx transmitting port  Rx receiving port
Ant antenna port  TL phase delay line
phase
Figure 4 – An example of BAW duplexer configuration
NOTE Two different BAW filters, transmitting and receiving band pass filters, are connected with a quarter
wavelength phase shifter, phase delay line, or parallel inductor on a package substrate for forming a duplexer, as
shown in Figure 4. In order to improve isolation characteristics between these transmitting and receiving filters, via
grounds should be well formed onto the package substrate. Series and shunt inductors are added into the Tx and
Rx filters in order to improve its attenuation, roll-off, and ripple characteristics.
3.3.1
transmitting band pass filter
Tx
band pass filter used at the transmitter of the RF system which transmits a signal to the
antenna
3.3.2
receiving band pass filter
Rx
band pass filter used at the receiver of the RF system which receives a signal from the
antenna
3.3.3
phase delay line
transmission line to delay a signal from a port to the antenna or isolate the transmitter and
receiver
– 10 – 62047-7  IEC:2011
3.4 Characteristic parameters
3.4.1 BAW resonator
3.4.1.1
equivalent circuit (of BAW resonators)
electrical circuit which has the same impedance as a piezoelectric resonator in the immediate
neighborhood of resonance
NOTE For example, one port BAW resonator consists of series elements L , C , R in parallel with C as shown
m m m o
in Figure 5, where L , C , R represent the motional inductance, capacitance, and resistance, respectively. C
m m m o
represents the shunt capacitance. Sometimes, another resistance R is added in series with an input terminal for
s
taking account of electrode and interconnection resistance.
C
o
R C L
m m m
IEC  1217/11
Key
C shunt capacitance  R motional resistance
0 m
C motional capacitance L motional inductance
m m
Figure 5 – Equivalent circuit of BAW resonator (one-port resonator)
[IEC/TS 61994-1: 2007, 3.25 modified]
3.4.1.2
nominal frequency
frequency assigned by the specification of the resonator
[IEC/TS 61994-1: 2007, 3.58 modified]
3.4.1.3
resonant frequency (or series resonant frequency)
f
r
lower frequency of the two frequencies of a piezoelectric resonator vibrating alone under
specified conditions, at which the electrical impedance of the resonator is resistive
[IEC/TS 61994-1: 2007, 3.81 modified]
3.4.1.4
anti-resonant frequency (parallel resonant frequency, f )
p
f
a
the higher frequency of two frequencies of a piezoelectric resonator vibrating alone. An
approximate value of this frequency is given by the expression
f =1/ 2π L C C /(C + C )
(1)
p m m 0 m 0
where
C represents the shunt capacitance; and
62047-7  IEC:2011 – 11 –
L and C are the motional inductance and capacitance
m m
[IEC/TS 61994-1: 2007, 3.3, 3.69 modified]
3.4.1.5
motional (series) resonant frequency
f
s
resonant frequency of the motional or series arm of the equivalent circuit of the resonator, it is
defined by the following formula
f = (2)
s
2π L C
m m
where
L
and C represent the motional inductance and capacitance respectively .
m m
[IEC/TS 61994-1: 2007, 3.55 modified]
3.4.1.6
fundamental resonance
lowest resonance mode in a given family of vibration
3.4.1.7
spurious resonance
state of resonance of a resonator other than that associated with the working frequency
[IEC/TS 61994-1: 2007, 3.86 modified]
3.4.1.8
spurious resonance rejection level
difference between the maximum level of spurious resonances and the minimum insertion
attenuation
[IEC/TS 61994-1: 2007, 3.87 modified]
3.4.1.9
unwanted response
state of resonance of a resonator other than that associated with the mode of vibration
intended for the application
[IEC/TS 61994-1: 2007, 3.99 modified]
3.4.1.10
capacitance ratio
r
to the motional capacitance C
ratio of the parallel capacitance C
0 m
[IEC/TS 61994-1: 2007, 3.7 modified]
3.4.1.11
motional capacitance
C
m
capacitance of the motional or series arm of the resonator equivalent circuit

– 12 – 62047-7  IEC:2011
3.4.1.12
motional inductance
L
m
inductance of the motional or series arm of the resonator equivalent circuit
3.4.1.13
motional resistance
R
m
resistance of the motional or series arm of the resonator equivalent circuit
[IEC/TS 61994-1: 2007, 3.52 modified]
3.4.1.14
shunt capacitance
C
capacitance in parallel with the motional arm of the resonator equivalent circuit which is
caused by the energy leakage and dielectric loss of the piezoelectric film
3.4.1.15
figure of merit
FOM or M
factor indicating performance of the device, product of both k and Q, which indicates the
eff
activity of the resonator, and the value usually given by Q/r, where Q is the Q factor and r is
the ratio of capacitances at low frequencies
[IEC/TS 61994-1: 2007 modified]
3.4.1.16
electromechanical coupling factor
certain combination of elastic, dielectric and piezoelectric constants which appears naturally
in the expression of impedance of a resonator. A different factor arises in each particular
family of mode of vibration. The factor is closely related to the relative frequency spacing and
is a convenient measure of piezoelectric transduction. Alternatively, the coupling factor may
be interpreted as the square root of the ratio of the electrical or mechanical work which can
be accomplished to the total energy stored from a mechanical or electrical power source for a
particular set of boundary conditions
[IEC/TS 61994-1: 2007, 3.22 modified]
3.4.1.17
relative frequency spacing
B
s
ratio of the difference between the parallel resonance frequency f and the series resonance
p
frequency f in a given mode of vibration, to the series resonance frequency
s
B = ( f − f ) / f (3)
s p s p
[IEC TS61994-1: 2007, 3.80 modified]
3.4.1.18
effective electromechanical coupling factor
k
eff
the effective electromechanical coupling factor for thickness-longitudinal vibration is defined
as follows:
 
   
π f π f
r r
    (4)
k = / tan
 
eff
   
2 f 2 f
 a  a
 
62047-7  IEC:2011 – 13 –
when the piezoelectric film is mechanically isolated from surroundings such as electrodes
3.4.1.19
electromechanical coupling factor (of piezoelectric material)
K
figure indicating piezoelectric strength of piezoelectric material is defined as follows:
K
k = (5)
eff
( )
1+ K
NOTE It depends not only materials but also the wave type and the wave propagation direction and polarization.
3.4.1.20
quality factor (for a series resonant circuit of BAW resonator)
Q
factor how long stored energy is preserved in a device and is defined as follows:
Q= 2πf L / R (6)
r m m
where
f is the resonance frequency;
r
L is the motional inductance;
m
R is the motional resistance
m
[IEC/TS61994-1: 2007, 3.77 modified]
NOTE The Q of a resonator is a measure of the losses in the device. The possible dissipative losses are
resistances in the electrodes, visco-acoustic loss in all of the materials, acoustic scattering from rough surfaces or
material defects, and acoustic radiation into the surrounding areas of the BAW device.
3.4.1.21
long-term parameter variation
relationship which exists between any parameter (for example resonance frequency) and time
3.4.2 BAW filter and duplexer
3.4.2.1
shape factor
ratio of the two bandwidths limited by two specified attenuation value
3.4.2.2
transition band
band of frequencies between a cut-off frequency and the nearest point of the adjacent stop
band
3.4.2.3
roll off rate
ratio of transition band to the ideal cut off frequency, which is an index describing the
increasing characteristics of BAW filters
3.4.2.4
attenuation
decrease in intensity of a signal, beam, or wave as a result of absorption of energy and of
scattering out of the path to the detector, but not including the reduction due to geometric
spreading
– 14 – 62047-7  IEC:2011
3.4.2.5
insertion attenuation
IA
logarithmic ratio of the power delivered to the load impedance before and after insertion of the
filter and duplexer
3.4.2.5.1
minimum insertion attenuation
minimum value of insertion attenuation in the pass band
3.4.2.5.2
nominal insertion attenuation
insertion attenuation at a specified reference frequency
3.4.2.5.3
maximum insertion attenuation
maximum value of insertion attenuation in the pass band
3.4.2.6
relative attenuation
difference between the attenuation at a given frequency and the attenuation at the reference
frequency
3.4.2.7
return attenuation
RA
value of the reciprocal of modulus of the reflection coefficient, expressed in decibels.
Quantitatively, it is equal to L , where Z is the impedance toward the source and Z is the
r 1 2
impedance toward the load, and the vertical bars indicate magnitude. It is the ratio of the
reflected power to the incident power.Γ is a reflection coefficient.
Z + Z
1 2
L = 20log [dB] (7)
r
Z − Z
1 2
RA= 20log(Γ)[dB] (8)
[IEC/TS 61994-2: 2000, 3.47 modified]
3.4.2.8
isolation
ratio of original signal power versus unwanted signal power when Tx signals go through the
antenna and the unwanted Tx signals come out from Rx port. Isolation usually concentrates
between Tx and Rx ports
3.4.2.9
ripple (pass-band ripple)
difference between the maximum and minimum attenuation within a pass band
3.4.2.10
pass-band attenuation deviation
maximum variation of the attenuation within a defined portion of the pass band of a filter
3.4.2.11
nominal frequency
frequency given by the manufacturer or the specification to identify the filter and duplexer

62047-7  IEC:2011 – 15 –
3.4.2.12
center frequency
frequency of the middle in the pass band or arithmetic mean of the cut-off frequencies
3.4.2.13
cut-off frequency
frequency of the pass band at which the relative attenuation reaches a specified value
3.4.2.14
pass band
band of frequencies in which the relative attenuation is equal to or less than a specified value
3.4.2.15
pass bandwidth
separation of frequencies between which the attenuation of a piezoelectric filter shall be equal
to, or less than, a specified value
3.4.2.16
stop band
band of frequencies in which the relative attenuation is equal to or greater than a specified
value
3.4.2.17
stop bandwidth
separation of frequencies between which the relative attenuation is equal to or greater than a
specified value
3.4.2.18
fractional or relative bandwidth
ratio of the pass bandwidth to the mid-band frequency in the case of band-pass fitter or ratio
of the stop bandwidth to the mid-band frequency in the case of band-stop filter
[IEC/TS 61994-2: 2000, 3.13 modified]
3.4.2.19
selectivity
difference between the attenuation at the given frequency outside the pass-band and the
reference value at a given reference frequency
3.4.2.20
standing wave
formed wave when an electromagnetic wave is transmitted into one end of a transmission line
and is reflected from the other end by an impedance mismatch
3.4.2.21
standing wave ratio
ratio of the amplitude of a standing wave at an anti-node (minimum) to the amplitude at an
adjacent node (maximum) or ratio of the electrical field strength at a voltage maximum on a
transmission line to the electrical field strength of an adjacent voltage minimum
3.4.2.22
impedance
total passive opposition offered to the flow of electric current. It is determined by the
particular combination of resistance, inductive reactance, and capacitive reactance in a given
circuit. It is represented by the letter "Z" and measured in ohms

– 16 – 62047-7  IEC:2011
3.4.2.23
input impedance
impedance at the input terminal of the filter device when it is properly terminated at its output
3.4.2.24
output impedance (or load impedance)
impedance presented by the filter to the load when the input is terminated by a specified
source impedance
3.4.2.25
characteristic impedance
ratio of the complex voltage applied to the input of an infinitely long transmission line to the
complex current that would flow in that line
3.4.2.26
RF power handling capability
capability of the filter or duplexer to transmit a given amount of power through the device
3.4.2.27
envelop delay time
time of propagation of a certain characteristic of a signal envelope between two points for a
certain frequency
3.4.2.28
operating temperature range
range of temperatures as measured on the enclosure over which the resonator will not sustain
permanent damage though not necessarily functioning within the specified tolerances
3.4.3 Temperature characteristics
3.4.3.1
temperature characteristics of mid-band frequency
maximum reversible variation of mid-band frequency produced over a given temperature
range within the category temperature range. It is expressed normally as a percentage of the
o
C
mid-band frequency related to a reference temperature of 25
3.4.3.2
temperature coefficient of mid-band frequency
TCF
rate of change of mid-band frequency with the temperature measured over a specified range
o
-6
of temperature. It is normally expressed in parts per million per degree Celsius (10 / C)
4 Essential ratings and characteristic parameters
4.1 Resonator, filter and duplexer marking
Bulk acoustic wave resonators, filters and duplexers shall be clearly and durably marked in
the order given below:
a) year and week (or month) of manufacture;
b) manufacture’s name or trade mark;
c) terminal identification (optional);
d) serial number;
e) factory identification code (optional).

62047-7  IEC:2011 – 17 –
4.2 Additional information
Some additional information should be given such as equivalent input and output circuits (eg.
input/output impedance, characteristic impedance, etc.), handling precautions, physical
information (eg. outline dimensions, terminals, accessories, etc.), package information, PCB
interface and mounting information, and other information, etc.
5 Test methods
5.1 Test procedure
Basically, test procedures for d.c. characteristics and RF characteristics of BAW filters and
duplexers are performed as shown in Figure 6 and Figure 7. The packaged BAW filters and
duplexers are mounted on a test fixture and measured by using a network analyzer. Since the
impedance of the network analyzer is usually 50 Ω the termination condition between the
filter and the equipment should be considered carefully.
Before connecting the filter or duplexer test fixture, the network analyzer, cable, and
connectors should be calibrated. The full 2-port calibration technique is effective to
compensate the system errors (i.e. presenting open-circuit impedance, short-circuit
impedance, through standards at the ends of test cable connectors, 50 Ω load impedance,
and storing the measured values for correction of resonator, filter, and duplexer
measurement). After calibration, connect the test cable with the filter test fixture with 50
Ω
connectors. The reading of s-parameter on the display of the network analyzer is taken. A
reflection coefficient, S11 and a transmission coefficient, S21 of two-port S parameters are
translated into reflection attenuation and insertion attenuation, respectively. If a different
frequency range is required, the entire calibration sequence has to be repeated.

– 18 – 62047-7  IEC:2011
Start
Insertion attenuation
Ripple
Return attenuation
VSWR
RF characterization
Bandwidth
Input and output
impedance
Isolation
Power handling Temperature
Reliability
capability test
End
IEC  1218/11
Key
Name of procedure Reference subclause Name of procedure Reference subclause
Start Temperature test 5.3.1.2
RF characterization Insertion attenuation 3.4.2.5 and 5.2.1
Reliability Return attenuation 3.4.2.7 and 5.2.2
End Bandwidth 3.4.2.15 and 5.2.3
Ripple 3.4.2.9 and 5.2.5 Isolation 3.4.2.8 and 5.2.4
5.2.6 Voltage standing Power handling 5.3.1.1
VSWR
wave ratio capability
Input and output 3.4.3.2.3 and 3.4.2.2.4
impedance
NOTE BAW filters and duplexers can be measured as shown in Figure 7. After mounting the BAW devices onto a
test fixture, RF characteristics are measured by using a network analyzer or an equivalent equipment. If the
measurements are satisfactory, reliability test (temperature (thermal cycling), shock, RF power handling, etc.) is
performed for commercially use.
Figure 6 – Measurement procedure of BAW filters and duplexers

62047-7  IEC:2011 – 19 –
Network analyzer
AC Transfer switch
power source
Reference
channel
A B C D
P ort 1 P ort 2 P ort 3 P ort 4
Test cable
50 Ω
Test cable
DUT
Test cable
IEC  1219/11
Key
Components and meters to monitor Equipments and supplies
DUT: device A piece of BAW resonator or To supply a specified level of electric
AC power source:
under test BAW filter or BAW duplexer power to a type of transfer switch
To detect port 1 reflected from To transfer a specified input power by
A (channel): Transfer switch:
the input of a piece of DUT switching toward port 1 or port 2
To detect port 2 reflected from
B (channel): Test cable:
the input of a piece of DUT
To detect port 3 reflected from To measure S-parameters through a
C (channel): Network analyzer:
the input of a piece of DUT piece of DUT
D (channel): To detect port42 power

transmitted through the DUT
Reference To detect supplying electric
channel power in watts to keep a
(meter): specified level
NOTE Other filter test equipments can also be used instead of the network analyzer. In case of BAW duplexers,
unused port should be terminated with 50 Ω or 75 Ω during the measurement.
Figure 7 – Electrical measurement setup of BAW resonators, filters and duplexers
5.2 RF characteristics
5.2.1 Insertion attenuation, IA
When the incident power is applied to input port of the band-pass filter or duplexer, it is a
measured ratio between the transmitted power to the output port and the incident power. The
insertion attenuation of the band-pass filter is obtained from the measured S-parameter - S .
The insertion attenuations of the duplexer are obtained from the measured S-parameter - S
(Tx-Ant) and S (Ant-Rx). The insertion attenuation is normally expressed in decibels (dB)
and obtained by the following equation.

– 20 – 62047-7  IEC:2011
IA=−20log(S )= 20log(Γ)[dB] (9)
The measured insertion attenuation of the band-pass filter or duplexer should be lower than
required minimum insertion attenuation given by users at the frequency band of applications.
Figure 8 shows the graphical shape of the measured insertion attenuation.

1,70 1,75 1,80 1,85 1,90 1,95 2,00 2,05 2,10
Frequency  (GHz)
IEC  1220/11
Figure 8 – Insertion attenuation of BAW filter

5.2.2 Return attenuation, RA
It is the measured ratio, normally expressed in dB, of the reflected power to the incident
power. It is obtained from the measured S-parameter, S in the band-pass filter.
RA=−20log S = 20logΓ [dB] (10)
In the case of the duplexer, return attenuations are obtained from the measured S-parameters,
S (for Tx band) and S (for Rx band). Figure 9 shows the graphical shape of the measured
11 22
return attenuation. The return attenuation is normally expressed in decibels (dB)
Insertion attenuation  (dB)
62047-7  IEC:2011 – 21 –
1,70 1,75 1,80 1,85 1,90 1,95 2,00 2,05 2,10
IEC  1221/11
Frequency  (GHz)
Figure 9 – Return attenuation of BAW filter
5.2.3 Bandwidth
It is the working frequency range of the band-pass filter or duplexer having good RF
characteristics enough to be used in subsystems and system applications. It is the measured
range, normally expressed in Hz, of the separation between the lower and the upper relative
to the specified value of the frequency response curve.
BW= f − f Hz (11)
upper(specified) lower(specified)
It is obtained from the measured S-parameters – S (band-pass filter), S (Tx-Ant for
21 31
duplexer) and S (Ant-Rx for duplexer). The upper and lower frequencies are selected when
the relative attenuation reaches a specified value.
5.2.4 Isolation
RF energy may leak from one conductor to another by radiation, ionization, capacitive
coupling, or inductive coupling. In case of duplexer, isolation is the measurement of the power
level between a transmitting, Tx and a receiving, Rx ports after terminating an antenna port as
50Ω . Isolation is normally specified in dB below the Input power level.
Isolation=−20log S [dB] (12)
The measured isolation of BAW duplexer should be higher than the required isolation given by
users. Figure 10 shows the graphical shape of the measured isolation characteristics.
Return attenuation  (dB)
– 22 – 62047-7 © IEC:2011
Rx band
Tx band
1,82 1,84 1,86 1,88 1,90 1,92 1,94 1,96 1,98 2,00 2,02
Frequency  (GHz)
IEC  1222/11
Figure 10 – Isolation (Tx-Rx) of BAW duplexer
5.2.5 Ripple
In-band ripple is defined as the fluctuation of the insertion attenuation within the pass band.
Figure 11 shows the graphical shape of the measured ripple characteristics.
Ripple
Ripple
Pass band
Pass band
1.83 1.84 1.85 1.86 1.87 1.88 1.89 1.90 1.91 1.92 1.93
1,83 1,84 1,85 1,86 1,87 1,88 1,89 1,90 1,91 1,92 1,93
FrequFrequencencyy  (GHz) (GHz )

IEC  1223/11
Figure 11 – Ripple of BAW filter
5.2.6 Voltage standing wave ratio (VSWR)
It is the measured ratio of the electrical field strength at a voltage maximum on a transmission
line to the electrical field strength of an adjacent voltage minimum. It is a measure of
mismatch of a line.
⎛ ⎞
1+Γ V
max
⎜ ⎟
VSWR = = , Γ is a reflection coefficient. (13)
⎜ ⎟
1−Γ V
min
⎝ ⎠
Insertion attenuation  (dB)
Insertion Attenuation (dB)
Isolation  (dB)
62047-7  IEC:2011 – 23 –
In above Equation (13), the reflection coefficient Γ is derived from following equation:
RA
−
Γ= 10 (14)
where
RA is the return attenuation.
The return attenuation is obtained using the measured s-parameters describe
...