Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

General Information

Status
Published
Publication Date
04-Apr-2019
Current Stage
PPUB - Publication issued
Start Date
05-Apr-2019
Completion Date
26-Apr-2019

Overview

IEC 62047-31:2019 specifies a standardized four-point bending test method to measure the interfacial adhesion energy (critical energy release rate) of the weakest interface in layered MEMS materials. Based on fracture mechanics, the method applies to thin-film stacks deposited on semiconductor substrates (typically silicon) where the total thin-film thickness is much smaller than the supporting substrate. The test uses a pure bending moment applied to a machined test piece to initiate and propagate steady-state interfacial cracking; the interfacial adhesion energy is derived from the critical bending load.

Key topics and requirements

  • Test principle: Introduce a pre-crack/notch, initiate a crack that reaches the weakest interface, then reload to measure the critical load for steady-state interfacial crack growth. Under pure bending the energy release rate is independent of crack length.
  • Test piece geometry and fabrication:
    • Test pieces must be produced using the same fabrication process as the actual MEMS devices.
    • Geometry constraints: thickness of the test piece should be ~50× less than its length and width; length should be ~10× larger than width. Total thin-film thickness should be ~100× less than the supporting substrate thickness.
    • Pre-crack/notch may be made by diamond saw, laser ablation or chemical etching.
  • Measurements and tolerances:
    • Dimensional measurements for span (L), width (b) and substrate thickness (h) must be accurate (error < ±5%).
    • The standard provides the fracture‑mechanics equation to compute energy release rate from the applied load (P), span (L), Young’s modulus (E), Poisson’s ratio (ν), width (b) and substrate thickness (h).
  • Test apparatus and control:
    • Four-point bending fixture on a universal testing machine with load cell, actuator, linear guide and displacement sensor.
    • Loading pin diameter requirements (as specified in the standard), and instrumentation resolution requirements (load cell and displacement sensor resolutions < 1/100 of relevant values).
    • Loading speed range recommended for steady-state cracking and camera imaging at >10 Hz with ≥20× magnification for crack behavior recording.

Applications

  • Thin-film adhesion characterization for MEMS components (sensors, actuators, RF-MEMS, micro-optics).
  • Process qualification and materials selection during MEMS fabrication development.
  • Failure analysis and reliability assessment where interfacial delamination is a root cause.
  • Comparative testing of surface treatments, adhesion layers and deposition processes.

Who should use this standard

  • MEMS designers and process engineers
  • Reliability and failure‑analysis laboratories
  • Materials scientists working on thin-film adhesion
  • Semiconductor test labs and QA teams validating MEMS fabrication

Related standards

  • Other parts of the IEC 62047 series (Semiconductor devices – Micro‑electromechanical devices)
  • IEC 62047-2 and IEC 62047-3 are referenced for thickness measurement methods used in preparing and analyzing test pieces.

Keywords: IEC 62047-31, four-point bending, interfacial adhesion energy, layered MEMS materials, thin film adhesion, fracture mechanics test, MEMS reliability.

Standard

IEC 62047-31:2019 - Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials

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Frequently Asked Questions

IEC 62047-31:2019 is a standard published by the International Electrotechnical Commission (IEC). Its full title is "Semiconductor devices - Micro-electromechanical devices - Part 31: Four-point bending test method for interfacial adhesion energy of layered MEMS materials". This standard covers: IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

IEC 62047-31:2019 (E) specifies a four-point bending test method for measuring interfacial adhesion energy of the weakest interface in the layered micro-electromechanical systems (MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are many layered material interfaces, and their adhesion energies are critical to the reliability of the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a test piece of layered MEMS device, and the interfacial adhesion energy is measured from the critical bending moment for the steady state cracking in the weakest interface. This test method applies to MEMS devices with thin film layers deposited on semiconductor substrates. The total thickness of the thin film layers should be 100 times less than the thickness of a supporting substrate (typically a silicon wafer piece).

IEC 62047-31:2019 is classified under the following ICS (International Classification for Standards) categories: 31.080.99 - Other semiconductor devices. The ICS classification helps identify the subject area and facilitates finding related standards.

IEC 62047-31:2019 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.

Standards Content (Sample)


IEC 62047-31 ®
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INTERNATIONAL
STANDARD
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Semiconductor devices – Micro-electromechanical devices –
Part 31: Four-point bending test method for interfacial adhesion energy of
layered MEMS materials
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IEC 62047-31 ®
Edition 1.0 2019-04
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 31: Four-point bending test method for interfacial adhesion energy of

layered MEMS materials
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-6717-2

– 2 – IEC 62047-31:2019 © IEC 2019
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms, definitions, symbols and designations . 5
3.1 Terms and definitions . 5
3.2 Symbols and designations . 6
4 Test piece . 6
4.1 General . 6
4.2 Shape of a test piece . 6
4.3 Measurement of dimensions . 7
4.4 Evaluation of energy release rate . 7
5 Testing method and test apparatus . 7
5.1 Test principle . 7
5.2 Test machine . 8
5.3 Test procedure . 8
5.4 Test environment . 9
6 Test report . 9
Annex A (informative) Failure modes during the four-point bending test . 10
A.1 General . 10
A.2 Some failure modes . 10
Bibliography . 12

Figure 1 – Four-point bending test piece . 6
Figure 2 – Picture of a four-point bending fixture . 9
Figure A.1 – Several failure modes during the four-point bending test . 11

Table 1 – Symbols and designations of a test piece . 6

INTERNATIONAL ELECTROTECHNICAL COMMISSION
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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 31: Four-point bending test method for interfacial
adhesion energy of layered MEMS materials

FOREWORD
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International Standard IEC 62047-31 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/326/FDIS 47F/331RVD
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This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 31: Four-point bending test method for interfacial
adhesion energy of layered MEMS materials

1 Scope
This part of IEC 62047 specifies a four-point bending test method for measuring interfacial
adhesion energy of the weakest interface in the layered micro-electromechanical systems
(MEMS) based on the concept of fracture mechanics. In a variety of MEMS devices, there are
many layered material interfaces, and their adhesion energies are critical to the reliability of
the MEMS devices. The four-point bending test utilizes a pure bending moment applied to a
test piece of layered MEMS device, and the interfacial adhesion energy is measured from the
critical bending moment for the steady state cracking in the weakest interface. This test
method applies to MEMS devices with thin film layers deposited on semiconductor substrates.
The total thickness of the thin film layers should be 100 times less than the thickness of a
supporting substrate (typically a silicon wafer piece).
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
There are no normative references in this document.
3 Te
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