IEC 62047-5:2011

IEC 62047-5 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 5: RF MEMS switches
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 5: Commutateurs MEMS-RF

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IEC 62047-5 ®
Edition 1.0 2011-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 5: RF MEMS switches
Dispositifs à semiconducteurs – Dispositifs microélectromécaniques –
Partie 5: Commutateurs MEMS-RF

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX V
ICS 31.080.99 ISBN 978-2-88912-584-5

– 2 – 62047-5  IEC:2011
CONTENTS
FOREWORD. 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
3.1 Switching operation . 7
3.2 Switching configuration . 7
3.3 Actuating mechanism . 7
3.4 Switching network configurations . 8
3.5 Reliability (performance) . 8
3.6 Electrical characteristics . 9
4 Essential ratings and characteristics . 10
4.1 Identification and types . 10
4.2 Application and specification description . 11
4.3 Limiting values and operating conditions . 11
4.4 DC and RF characteristics . 11
4.5 Mechanical and environmental characteristics . 12
4.6 Additional information . 12
5 Measuring methods . 12
5.1 General . 12
5.1.1 General precautions . 12
5.1.2 Characteristic impedances . 12
5.1.3 Handling precautions . 12
5.1.4 Types . 12
5.2 DC characteristics . 12
5.2.1 DC actuation voltage . 12
5.2.2 On or off resistance (d.c. contact or resistive type) . 14
5.2.3 On or off capacitance (capacitive type) . 15
5.2.4 Power consumption . 16
5.3 RF characteristics . 17
5.3.1 Insertion loss (L ) . 17
ins
5.3.2 Isolation (L ) . 19
iso
5.3.3 Voltage standing wave ratio (VSWR) . 20
5.3.4 Input power at the intercept point . 21
5.4 Switching characteristics . 21
5.4.1 General . 21
5.4.2 Switching time measurement . 21
6 Reliability (performance) . 22
6.1 General . 22
6.2 Life time cycles . 22
6.2.1 General . 22
6.2.2 Cold switching . 23
6.2.3 Hot switching or power handling . 23
6.3 Temperature cycles . 24
6.3.1 General . 24
6.3.2 Test temperature. 24
6.3.3 Test cycle . 24

62047-5  IEC:2011 – 3 –
6.4 High temperature and high humidity testing . 24
6.5 Shock testing . 25
6.6 Vibration testing . 25
6.7 Electrostatic discharge (ESD) sensitivity testing . 25
Annex A (informative) General description of RF MEMS Switches . 26
Annex B (informative) Geometry of RF MEMS switches . 27
Annex C (informative) Packaging of RF MEMS switches . 30
Annex D (informative) Failure mechanism of RF MEMS switches . 31
Annex E (informative) Applications of RF MEMS switches . 32
Annex F (informative) Measurement procedure of RF MEMS switches . 34

Figure 1 – Terminals of RF MEMS switch . 11
Figure 2 – Circuit diagram for measuring d.c. actuation voltage and RF characteristics
of RF MEMS switches . 13
Figure 3 – Circuit diagram for measuring impedance between the input and output
ports . 14
Figure 4 – Circuit diagram for measuring RF characteristics between the input and
output ports using a network analyzer . 18
Figure 5 – Circuit block diagram of a test setup to evaluate life time of RF MEMS
switch . 22
Figure 6 – Circuit block diagram of a test setup for power handling capability of RF
MEMS switch . 24
Figure B.1 – RF MEMS series d.c. contact switch with two contact areas. . 27
Figure B.2 – RF MEMS series d.c. contact switch with one contact area . 27
Figure B.3 – RF MEMS shunt d.c. contact switch . 28
Figure B.4 – RF MEMS series capacitive type switch with one contact area . 28
Figure B.5 – RF MEMS shunt capacitive type switch . 29
Figure F.1 – Measurement procedure of RF MEMS switches . 34

Table A.1 – Comparison of semiconductor and RF MEMS switches . 26
Table B.1 – Comparison of RF MEMS switches with different actuation mechanism . 29
Table D.1 – Comparison of failure mechanism of RF MEMS switches . 31

– 4 – 62047-5  IEC:2011
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 5: RF MEMS switches
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 62047-5 has been prepared by subcommittee 47F: Micro-
electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47F/83/FDIS 47F/93/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts of the IEC 62047 series, under the general title Semiconductor devices –
Micro-electromechanical devices, can be found in the IEC website.

62047-5  IEC:2011 – 5 –
The committee has decided that the contents of this publication will remain unchanged until
the stability date indicated on the IEC web site under "http://webstore.iec.ch" in the data
related to the specific publication. At this date, the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
The contents of the corrigendum of March 2012 have been included in this copy.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
– 6 – 62047-5  IEC:2011
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 5: RF MEMS switches
1 Scope
This part of IEC 62047 describes terminology, definition, symbols, test methods that can be
used to evaluate and determine the essential ratings and characteristic parameters of RF
MEMS switches. The statements made in this standardization are also applicable to RF
(Radio Frequency) MEMS (Micro-Electro-Mechanical Systems) switches with various
structures, contacts (d.c. contact and capacitive contact), configurations (series and shunt),
switching networks (SPST, SPDT, DPDT, etc.), and actuation mechanism such as
electrostatic, electro-thermal, electromagnetic, piezoelectric, etc. The RF MEMS switches are
promising devices in advanced mobile phones with multi-band/mode operation, smart radar
systems, reconfigurable RF devices and systems, SDR (Software Defined Radio) phones, test
equipments, tunable devices and systems, satellite, etc.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the normative documents (including any amended documents) referred to applies.
IEC 60747-1: 2006, Semiconductor devices – Part 1: General
IEC 60747-16-1, Semiconductor devices – Part 16-1: Microwave integrated circuits –
Amplifiers
IEC 60747-16-4:2004, Semiconductor devices – Part 16-4: Microwave integrated circuits –
Switches
IEC 60749-5, Semiconductor devices – Mechanical and climatic test methods – Part 5:
Steady-state temperature humidity bias life test
IEC 60749-10, Semiconductor devices – Mechanical and climatic test methods – Part 10:
Mechanical shock
IEC 60749-12, Semiconductor devices – Mechanical and climatic test methods – Part 12:
Vibration, variable frequency
IEC 60749-27, Semiconductor devices – Mechanical and climatic test methods – Part 27:
Electrostatic discharge (ESD) sensitivity testing – Machine model (MM)
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
NOTE In the text of this standard, the term of switch is used instead of RF MEMS switch to improve the
readability.
62047-5  IEC:2011 – 7 –
3.1 Switching operation
3.1.1
capacitive switch
switch whereby an RF signal is passed or blocked by a change of impedance ratio caused by
the capacitive effect of making contact using a movable metal plate onto a dielectric film
presented on a fixed metal plate
3.1.2
d.c. contact switch
switch whereby an RF signal is passed or blocked by a movable metal contact
3.2 Switching configuration
3.2.1
series switch
switch whereby an RF signal applied to the input port is directly passed to the output port
when a movable plate makes contact with a fixed plate
3.2.2
shunt switch
switch whereby an RF signal applied to the input port is passed to the ground plane when a
movable plate makes contact with a fixed plate
3.3 Actuating mechanism
3.3.1
electro-statically actuated switch
switch whereby a moving plate is pulled down onto the fixed plate by an electrostatic force
caused by the applied d.c. bias voltage, the moving plate returns to its original position when
the bias voltage is removed
NOTE Advantages are virtually zero power consumption, small electrode size, relatively short switching time, and
relatively simple fabrication and disadvantage is higher actuation voltage.
3.3.2
electro-magnetically actuated switch
switch whereby a movable plate or armature is pulled down onto a fixed plate by a magnetic
force generated by a permanent magnet or an energised electromagnet
NOTE Advantage is a low actuation voltage and disadvantages are complexity of fabrication and high power
consumption.
3.3.3
electro-thermally actuated switch
switch whereby a movable plate constructed of two or more differing materials with differential
thermal expansion coefficients deflects to contact a fixed plate or electrode
NOTE Advantages are nearly linear deflection-versus-power relations and environmental ruggedness and
disadvantages are high power consumption, low bandwidth, and relatively complex fabrication.
3.3.4
piezo-electrically actuated switch
switch whereby a movable plate constructed of piezoelectric materials deflects to contact a
fixed plate or electrode
– 8 – 62047-5  IEC:2011
3.4 Switching network configurations
3.4.1
single-pole-single-throw switch
SPST
device with a single input and a single output, which is providing an ON-OFF switching
function with switch actuation
3.4.2
single-pole-double-throw switch
SPDT
device with a single input and two outputs, which is transferring the through connection from
one output to the other output with switch actuation
3.4.3
single-pole-multi-throw switch
SPMT
device with one input and multiple outputs whereby connection to one or the other of the
multiple outputs is determined by switch actuation
3.4.4
double-pole-double- throw switch
DPDT
device with two inputs and two outputs, which is transferring the through connection from one
output to the other output with switch actuation
3.4.5
multi-pole-multi-throw switch
MPMT
device with multi inputs and outputs, which is transferring the through connection from multi
outputs to the other multi outputs with switch actuation
3.5 Reliability (performance)
3.5.1
life time cycles
number of actuating times which the switches are operating with satisfactory electrical
performances in the on/off positions
NOTE Unlike the electronic switch, a mechanical switch may fail due to stiction (micro-welding and material
transfer) of a moving part and degradation of metal to metal contact used, whereas at electronic RF switches
(capacitive switch) the reliability is limited by dielectric charging (charge injection and charge trapping).
3.5.2
cold switching
performed switching where the RF power is not applied during the switch operation
NOTE It is useful for examining the durability of the switch electrode to see if it can withstand the physical
stresses of repeated switching.
3.5.3
hot switching
performed switching where the RF power is applied during the switch operation
NOTE The hot-switching tests are indicative of how the switch will survive under actual operating conditions, with
current flowing through the device.

62047-5  IEC:2011 – 9 –
3.6 Electrical characteristics
3.6.1
d.c. characteristics
3.6.1.1
actuation voltage
d.c. voltage for the movable electrode (or membrane) of the switch being collapsed down onto
the fixed plate and kept securing RF characteristics desired
3.6.1.2
on resistance – DC contact type
electrical resistance which is measured across fully closed contacts at their associated
external terminals
3.6.1.3
off resistance – DC contact type
electrical resistance which is measured across fully opened contacts at their associated
external terminals
3.6.1.4
on capacitance – Capacitive type
electrical capacitance which is measured in the down-state position (the movable electrode
collapsed down on the dielectric layer on top of the fixed electrode) of the switch
3.6.1.5
off capacitance – Capacitive type
electrical capacitance which is measured in the up-state position of the switch (before the
movable electrode is being actuated)
3.6.1.6
power consumption
power consumed to pull down and hold the movable plate onto the fixed electrode when the
switch is ON
3.6.2
RF characteristics
3.6.2.1
insertion loss
[IEC 60747-16-4:2004, 3.1]
3.6.2.2
isolation
[IEC 60747-16-4:2004, 3.2]
NOTE It is caused by a RF energy leak from one conductor to another by radiation, ionization, capacitive coupling,
or Inductive coupling.
3.6.2.3
return loss
[IEC 60747-16-4:2004, 3.3]
3.6.2.4
voltage standing wave ratio
VSWR
ratio of the electrical field strength at a voltage maximum on a transmission line to the
electrical field strength of an adjacent voltage minimum

– 10 – 62047-5  IEC:2011
3.6.2.5
resonant frequency
frequency occurred at LC series resonance when the switch is up-state and down-state
position, respectively
3.6.2.6
bandwidth
frequency range where the switch has good RF characteristics enough to use in subsystems
and system applications
NOTE It is usally expressed as either the frequency or percentage differences between the lower or the upper
relative 1 dB points of the frequency response curve.
3.6.2.7
power handling capability
capability of a switch to transmit a given amount of power through the device when the switch
is on
3.6.3
Switching characteristics
3.6.3.1
self actuation power
radio frequency power where the switch movable plate is self-actuated without any voltages
being applied directly to it
3.6.3.2
switching time
3.6.3.2.1
turn on time
[IEC 60747-16-4:2004, 3.6]
3.6.3.2.2
turn off time
[IEC 60747-16-4:2004, 3.7]
3.6.3.2.3
rise time
transition time of the switch from OFF to ON state
NOTE OFF state: 10 % of C , ON state: 90 % of C .
up down
[IEC 60747-16-4:2004, 3.8]
3.6.3.2.4
falling time
transition time of the switch from ON to OFF state
[IEC 60747-16-4:2004, 3.9]
4 Essential ratings and characteristics
4.1 Identification and types
General description of the function of RF MEMS switches and their applications should be
stated. The statement should include the details of manufacturing technologies about the RF
MEMS switches with different operation, configuration, and actuation mechanism. The

62047-5  IEC:2011 – 11 –
statement should also include packaged form including terminal numbering and package
materials.
See 4.1 of IEC 60747-16-4:2004.
4.2 Application and specification description
Information on application of the RF MEMS switch shall be given. Block diagrams of RF
MEMS switches and the applied systems should be also given. All terminals should be
identified in the block diagram and their functions shall also be stated.
See 4.2 and 4.3 of IEC 60747-16-4:2004.
Control voltages or currents
Inputs NU
RFMEMS
Switch
Outputs
NC
Ground
IEC  1640/11
NOTE NC is a non-connected terminal and NU is a non-usable terminal.

Figure 1 – Terminals of RF MEMS switch
4.3 Limiting values and operating conditions
This statement should include limiting conditions and values. In particular, electrical limiting
values (control voltages or control currents, input power, handling power, power dissipation,
etc.) and temperature conditions (operating, ambient, storage, and soldering) shall be given in
the statement. These values are indicated within the table including the note.
Parameters (note) Symbols Min. Max. Unit

See 4.4 and 4.5 of IEC 60747-16-4:2004
4.4 DC and RF characteristics
DC and RF characteristic parameters shall be stated with Min., Nominal, and Max. in a table
form.
– 12 – 62047-5  IEC:2011
Characteristics Symbols Conditions Min. Nominal Max. Unit

4.5 Mechanical and environmental characteristics
Any specific mechanical characteristics and environmental ratings applicable shall be stated.
The characteristics shall be stated with Symbol, Unit, Min, Nominal, and Max. in a table form.
See 4.6 of IEC 60747-16-4:2004.
4.6 Additional information
Some additional information shall be given such as equivalent input and output circuits (eg.
Input/output impedance, d.c. block capacitors, etc.), internal protection circuits against high
static voltages or electric fields, handling precautions, and application data/information, etc.
See 4.8 of IEC 60747-16-4:2004.
5 Measuring methods
5.1 General
This clause prescribes measuring methods for electrical characteristics of RF MEMS switches
used at d.c. to microwave frequency bands.
5.1.1 General precautions
Special care shall be taken to use d.c. supplies, the input RF power supplies, and all bias
supply voltages for the measurement of RF MEMS switches. The level of the input and/or
output signal shall be specified in either power or voltage.
5.1.2 Characteristic impedances
The input and output characteristic impedances of the measurement systems are 50 Ω. If
they are not 50 Ω , they shall be specified.
5.1.3 Handling precautions
See Clause 8 of IEC 60747-1:2006.
5.1.4 Types
RF MEMS switches in this standard are both packaged and chip types, measured using
suitable test equipments and fixtures.
5.2 DC characteristics
5.2.1 DC actuation voltage
5.2.1.1 Purpose
To measure the optimal control d.c. voltage to satisfy the desired RF characteristics.

62047-5  IEC:2011 – 13 –
5.2.1.2 Circuit diagram
Figure 2 shows a circuit diagram for measuring d.c. actuation voltage and RF characteristics
of RF MEMS switches.
Bias tee or Bias tee or
DC block DC block
RF signal
Signal
generator
amplifier Isolator Attenuator
DUT
Spectrum
dB
analyzer
Termination Termination
V
W W
A
Power Power
Control power
meter 1 meter 2
supply
IEC  1641/11
Key
Components and meters to monitor Equipments and supplies
DUT: device to supply a specified RF signal to a
a piece of RF MEMS switches
RF signal generator:
under test type of the signal amplifier
to apply a level of amplified signal to
DC voltage source for operating
V: Signal amplifier: the input port of a piece of DUT
the DUT
through the isolator
to apply the amplified input power to a
DC current source for operating
A: Isolator: piece of DUT without being returned to
the DUT
a signal amplifier
power (watt) meter to monitor
to block a level of d.c. signal between
W: output power (watt) value of a Bias tee or d.c. block:
the input and output orts of the DUT
piece of testing device
dB: attenuator to reduce the output
to apply a specified bias voltage to a
power of DUT for protecting the Control power supply:
piece of DUT
spectrum analyzer
Spectrum to measure the spectrum through to keep the measured power level
Termination:
analyzer: the DUT steady
NOTE 1 The control bias for RF MEMS switch is supplied to become ON or OFF between the input and output
ports.
NOTE 2 The purpose of the isolator is to enable the power level to the device being measured to be kept constant
without considering the mismatched input impedance. Bias tee is used to block the d.c. signal between the input
and output ports of device being measured.
Figure 2 – Circuit diagram for measuring d.c. actuation voltage
and RF characteristics of RF MEMS switches
5.2.1.3 Principle of measurement
When a control voltage keeps increasing between the driving electrodes (a movable electrode
and a fixed electrode), it is measured during the movable plate of the RF MEMS switch being
collapsed down onto the fixed plate and kept securing the desired RF characteristics.
5.2.1.4 Measurement procedure
The frequency of the RF signal generator shall be set to the specified value.
An adequate input power shall be applied to the device being measured.

– 14 – 62047-5  IEC:2011
The control dc bias voltage will be applied and varied to find the desired output power which
is close to the input power.
When the desired output power is obtained, the dc bias voltage is recorded as the optimal d.c.
actuation voltage.
5.2.1.5 Specified conditions
The specified conditions are as follows:
– ambient or reference-point temperature;
– bias conditions;
– frequency;
– input power;
– desired RF characteristics;
– port being measured.
5.2.2 On or off resistance (d.c. contact or resistive type)
5.2.2.1 Purpose
To measure the dc (or low frequency) resistance between the input and output ports under
‘ON’ or ‘OFF’ conditions.
5.2.2.2 Circuit diagram
Figure 3 shows a circuit diagram for measuring impedance between the input and output ports.
DUT
Impedance
analyzer
V
Control power supply
A
IEC  1642/11
Key
Components and meters to monitor Equipments and supplies
DUT: device to apply a specified bias voltage to a
a piece of RF MEMS switch Control power supply:
under test piece of DUT
DC voltage source for operating to measure impedance between the
V: Impedance analyzer:
the DUT input and output ports of the DUT
DC current source for operating
A:
the DUT
NOTE The control bias is supplied to become ON between the input and output ports.
Figure 3 – Circuit diagram for measuring impedance
between the input and output ports

62047-5  IEC:2011 – 15 –
5.2.2.3 Principle of measurement
The on resistance, R and off resistance, R are derived from the impedance between the
on off
input and output ports in the unit of ohms. The resistance is being measured as follows:
R = re (Z ) (1)
on on
R = re (Z ) (2)
off off
where
Z and Z are the values indicated by the impedance analyzer.
on off
5.2.2.4 Measurement procedure
A calibration of the impedance analyzer shall be made in order to eliminate systematic error in
the impedance analyzer, cable, and connectors.
Impedance of open and short circuit, impedances of 50 Ω , and through standard calibration
shall be performed and stored.
When the actuation voltage is applied to the device being measured, its impedance will be
displayed.
The real value of the measured impedance is treated as the ON resistance as described in
5.2.2.3.
NOTE Instead of the impedance analyzer, multi-meter or LCR meter can also be applied to measure the on/off
resistance directly.
5.2.2.5 Specified conditions
The specified conditions are as follows:
– ambient or reference-point temperature;
– bias conditions;
– port being measured.
5.2.3 On or off capacitance (capacitive type)
5.2.3.1 Purpose
To measure the series capacitance between the input and output ports under ‘ON’ or ‘OFF’
conditions.
5.2.3.2 Circuit diagram
The measurement circuit is the same as shown in Figure 3.
5.2.3.3 Principle of measurement
The on capacitance, C and off capacitance, C are derived from the impedance between
on off
the input and output ports in units of farad. The capacitance is being measured as follows:
C = -1/ (ω(im(1/Z ))) = -1/ (2πf(im(1/Z ))) (3)
on on on
C = -1/ (ω(im(1/Z ))) = -1/ (2πf(im(1/Z ))) (4)
off off off
– 16 – 62047-5  IEC:2011
where
Z and Z are the values indicated by the impedance analyzer, and
on off
C and C are expressed in farad.
on off
5.2.3.4 Measurement procedure
A calibration of the impedance analyzer shall be made in order to eliminate systematic error in
the impedance analyzer, cable, and connectors.
Impedance of open and short circuit, impedances of 50 Ω , and through standard calibration
shall be performed and stored.
When the actuation voltage is applied to the device being measured, its impedance will be
displayed.
The imagery value of the measured impedance is divided by the measured angular frequency,
ω as described in 5.2.3.3.
NOTE Instead of the impedance analyzer, multi-meter or LCR meter can also be applied to measure the on/off
capacitance directly.
5.2.3.5 Specified conditions
The specified conditions are as follows:
– ambient or reference-point temperature;
– bias conditions;
– frequency;
– port being measured.
5.2.4 Power consumption
5.2.4.1 Purpose
To measure the power consumption under specified conditions.
NOTE Power is consumed to pull down and hold the movable plate onto the fixed electrode when the RF MEMS
switch is ON or OFF.
5.2.4.2 Circuit diagram
See Figure 2 described in 5.2.1.2.
5.2.4.3 Principle of measurement
The consumed power is derived from the following equation:
P = IV (5)
where
I is the current on control bias;
V is the voltage on control bias;
P is expressed in watt.
5.2.4.4 Measurement procedure
The frequency of the RF signal generator shall be set to the specified value.

62047-5  IEC:2011 – 17 –
An adequate input power shall be applied to the device being measured.
The control dc bias voltage will be applied and varied to find the desired output power which
is close to the input power.
When the desired output power is obtained, the used control dc voltage or current of the RF
MEMS switch is recorded and utilized to calculate the consumed power by using the Equation
(5) described in 5.2.4.3.
5.2.4.5 Specified conditions
The specified conditions are as follows:
– ambient or reference-point temperature;
– bias conditions;
– frequency;
– port being measured.
5.3 RF characteristics
)
5.3.1 Insertion loss (L
ins
5.3.1.1 Purpose
To measure the insertion loss between the input and output ports under ‘ON’ condition.
5.3.1.2 Circuit diagram
Figure 4 shows a circuit diagram for measuring RF characteristics between the input and
output port using a network analyzer.

– 18 – 62047-5  IEC:2011
ACAC
network analyzerNetwork analyzer
powpower sourceer source
Transfer
switch
transfer switch
Reference
meter
reference
A B
meter
Port 1
Port 2
port 1 port 2
DUT
DUT
Test Test
test test
cable cable
cable cable
V
Ccontrol power supplyontrol power
A
supply
IEC  1643/11
Key
Components and meters to monitor Equipments and supplies
DUT: device to supply a specified level of electric
a piece of RF MEMS switches AC power source:
under test power to a type of transfer switch
DC voltage source for operating to transfer a specified input power by
V: Transfer switch:
the DUT switching toward port 1 and port 2
DC current source for operating to apply a specified bias voltage to a
A: Control power supply:
the DUT piece of DUT
to detect port 1 reflected from to measure S-parameters through a
A (channel): Network analyzer:
the input of a piece of DUT piece of DUT
B (channel): to detect port 2 power

transmitted through the DUT
Reference to detect supplying electric
meter: power in watt to keep a specified
level
NOTE 1 Ref channel is to detect source power for the reference. A channel is to detect Port 2 power reflected
from the input of device being measured and B channel is to detect Port 2 power transmitted through the device.
NOTE 2 Other test equipments and set-ups can be used instead of the network analyzer.
Figure 4 – Circuit diagram for measuring RF characteristics between the input
and output ports using a network analyzer
5.3.1.3 Principle of measurement
When the incident power is applied to the input port of RF MEMS switch, it is a measured
ratio between the transmitted power into the output port and the incident power. The insertion
loss of the switch is calculated from the measured S-parameter, S . The Insertion loss, L
21 ins
is normally expressed in decibels (dB). It has a logarithmic expression of a ratio between two
quantities (commonly voltage, current, or power),
L =−20log( S )[dB]  (switch is on) (6)
ins 21
62047-5  IEC:2011 – 19 –
When the VNA (vector network analyzer) is not used, see 5.2 of IEC 60747-16-4:2004.
5.3.1.4 Measurement procedure
The measurement set-up is shown in Figure 4. An RF signal from the RF output Port 1 of a
network analyzer is directly fed to Port 2 through a device being measured. Before connecting
a device being measured, a calibration shall be made in order to eliminate systematic errors
in the network analyzer, cable, and connectors.
The full 2-port calibration technique is highly recommended. Impedance of open and short
circuit, impedances of 50 Ω , and through standard calibration shall be performed and stored
in order.
After calibration, connect the device being measured at the place indicated in Figure 4. When
the actuation voltage is applied to the device being measured (the switch is mechanically or
electrically connected), its S-parameter shall be measured using the network analyzer.
5.3.1.5 Specified conditions
The specified conditions are as follows:
– ambient or reference-point temperature;
– bias conditions;
– frequency;
– port being measured.
5.3.2 Isolation (L )
iso
5.3.2.1 Purpose
To measure the isolation between the input and output ports under ‘OFF’ conditions.
5.3.2.2 Circuit diagram
The measurement circuit is the same as shown in Figure 4.
5.3.2.3 Principle of measurement
RF energy can leak from one conductor to another by radiation, ionization, capacitive coupling,
or inductive coupling. In the case of the switching devices, isolation is the measurement of the
power level at the unconnected RF output(s) as referred to the power travelling between the
input and the connected output. Isolation, L is normally specified in dB below the Input
iso
power level and calculated from the measured S-parameter.
(switch is off) (7)
L =−20 log( S )[dB]
iso 21
When the VNA is not used, see 5.3 of IEC 60747-16-4:2004.
5.3.2.4 Measurement procedure
The measurement set-up is shown in Figure 4. An RF signal from the RF output Port 1 of a
network analyzer is directly fed to Port 2 through a device being measured. Before connecting
a device being measured,
...