SIST EN 60749-22:2004

SLOVENSKI SIST EN 60749-22:2004

STANDARD
julij 2004
Semiconductor devices - Mechanical and climatic test methods - Part 22: Bond
strength (IEC 60749-22:2002)
ICS 31.080.01 Referenčna številka
©  Standard je založil in izdal Slovenski inštitut za standardizacijo. Razmnoževanje ali kopiranje celote ali delov tega dokumenta ni dovoljeno

EUROPEAN STANDARD EN 60749-22
NORME EUROPÉENNE
EUROPÄISCHE NORM June 2003
ICS 31.080.01
English version
Semiconductor devices -
Mechanical and climatic test methods
Part 22: Bond strength
(IEC 60749-22:2002)
Dispositifs à semiconducteurs -  Halbleiterbauelemente -
Méthodes d'essais mécaniques Mechanische und klimatische Prüfverfahren
et climatiques Teil 22: Kontaktfestigkeit (Bond strength)
Partie 22: Robustesse des contacts (IEC 60749-22:2002)
soudés
(CEI 60749-22:2002)
This European Standard was approved by CENELEC on 2002-09-24. CENELEC members are bound to
comply with the CEN/CENELEC Internal Regulations which stipulate the conditions for giving this European
Standard the status of a national standard without any alteration.

Up-to-date lists and bibliographical references concerning such national standards may be obtained on
application to the Central Secretariat or to any CENELEC member.

This European Standard exists in three official versions (English, French, German). A version in any other
language made by translation under the responsibility of a CENELEC member into its own language and
notified to the Central Secretariat has the same status as the official versions.

CENELEC members are the national electrotechnical committees of Austria, Belgium, Czech Republic,
Denmark, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Luxembourg, Malta,
Netherlands, Norway, Portugal, Slovakia, Spain, Sweden, Switzerland and United Kingdom.

CENELEC
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung

Central Secretariat: rue de Stassart 35, B - 1050 Brussels

© 2003 CENELEC - All rights of exploitation in any form and by any means reserved worldwide for CENELEC members.

Ref. No. EN 60749-22:2003 E
Foreword
The text of the International Standard IEC 60749-22:2002 was approved by CENELEC as
EN 60749-22 on 2002-09-24.
The text of this International Standard was reproduced from IEC 60749:1996, chapter 2, clause 6
without change. Therefore, it has not been submitted to vote a second time and is still based on
documents 47/1394/FDIS et 47/1477/FDIS.
The following dates were fixed:
– latest date by which the EN has to be implemented
at national level by publication of an identical
national standard or by endorsement (dop) 2004-01-01
– latest date by which the national standards conflicting
with the EN have to be withdrawn (dow) 2005-10-01
Each test method governed by this standard and which is part of the series is a stand-alone
document, numbered EN 60749-2, EN 60749-3, etc. The numbering of these test methods is
sequential, and there is no relationship between the number and the test method (i.e. no grouping of
test methods). The list of these tests will be available in the CENELEC internet site and in the
catalogue.
Updating of any of the individual test methods is independent of any other part.
Annexes designated "normative" are part of the body of the standard.
In this standard, annex A is normative.
__________
Endorsement notice
The text of the International Standard IEC 60749-22:2002 was approved by CENELEC as a European
Standard without any modification.
__________
NORME CEI
INTERNATIONALE IEC
60749-22
INTERNATIONAL
Première édition
STANDARD
First edition
2002-09
Dispositifs à semiconducteurs –
Méthodes d'essais mécaniques et climatiques –
Partie 22:
Robustesse des contacts soudés
Semiconductor devices –
Mechanical and climatic test methods –
Part 22:
Bond strength
© IEC 2002 Droits de reproduction réservés ⎯ Copyright - all rights reserved
Aucune partie de cette publication ne peut être reproduite ni No part of this publication may be reproduced or utilized in any
utilisée sous quelque forme que ce soit et par aucun procédé, form or by any means, electronic or mechanical, including
électronique ou mécanique, y compris la photocopie et les photocopying and microfilm, without permission in writing from
microfilms, sans l'accord écrit de l'éditeur. the publisher.
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Pour prix, voir catalogue en vigueur
For price, see current catalogue

60749-22 © IEC:2002 – 3 –
CONTENTS
FOREWORD . 5
INTRODUCTION .9
1 Scope and object .11
1.1 General description of the test .11
1.2 Description of the test apparatus (for all methods) .11
2 Methods A and B (see also annex A) .11
2.1 Scope .11
2.2 General description of the test .13
3 Method C.15
3.1 Scope .15
3.2 Method C: Bond peel .15
4 Method D.15
4.1 Scope .15
4.2 Method D: Bond shear (applied to flip chip) .17
5 Methods E and F .17
5.1 Scope .17
5.2 Method E: Push-off test .17
5.3 Method F: Pull-off test .19
5.4 Failure criteria for both methods E and F: .19
5.5 Force to be applied (both methods) .19
6 Method G: Wire ball shear test.19
6.1 Scope .19
6.2 General description .21
6.3 Terms and definitions .21
6.4 Equipment and material .27
6.5 Procedure.29
6.6 Acceptable test limits.31
7 Information to be given in the relevant specification.35
Annex A (normative) Guidance.39

60749-22 © IEC:2002 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 22: Bond strength
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-22 has been prepared by IEC technical committee 47:
Semiconductor devices.
The text of this test method is reproduced from IEC 60749 Ed.2, chapter 2, clause 6 without
change. It has therefore not been submitted to vote a second time and is still based on the
following documents:
FDIS Report on voting
47/1394/FDIS 47/1402/RVD
47/1477/FDIS 47/1518/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
Each test method governed by IEC 60749-1 and which is part of the series is a stand-alone
document, numbered IEC 60749-2, IEC 60749-3, etc. The numbering of these test methods is
sequential, and there is no relationship between the number and the test method (i.e. no
grouping of test methods). The list of these tests will be available in the IEC Internet site and
in the catalogue.
60749-22 © IEC:2002 – 7 –
Updating of any of the individual test methods is independent of any other part.
The committee has decided that the contents of this publication will remain unchanged
until 2007. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
The contents of the corrigendum of August 2003 have been included in this copy.

60749-22 © IEC:2002 – 9 –
INTRODUCTION
Activity within IEC technical committee 47, working group 2, includes the generation,
coordination and review of climatic, electrical (of which only ESD, latch-up and electrical
conditions for life tests are considered), mechanical test methods, and associated inspection
techniques needed to assess the quality and reliability of the design and manufacture of
semiconductor products and processes.

60749-22 © IEC:2002 – 11 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 22: Bond strength
1 Scope and object
This part of IEC 60749 is applicable to semiconductor devices (discrete devices and
integrated circuits).
The object of this part is to measure bond strength or determine compliance with specified
bond strength requirements.
NOTE This test is identical to the test method contained in clause 6 of chapter 2 of IEC 60749 (1996),
amendment 1, apart from changes to this clause and renumbering.
1.1 General description of the test
Seven test methods are described, each having its own purpose, that is:
– methods A and B are intended for testing internal bonds of a device by a direct pulling of
the connecting wire;
– method C is intended for bonds external to the device and consists of a peeling stress
exerted between the lead or terminal and the board or substrate;
– method D is intended for internal bonds and consists of a shear stress applied between
a die and a substrate or similar face-bonded configurations;
– methods E and F are intended for external bonds and consist of a push-off or a pull-off
stress exerted between a die and the substrate;
– method G is intended to test the mechanical resistance of wire bonds to a shear force.
1.2 Description of the test apparatus (for all methods)
The apparatus for this test should consist of suitable equipment for applying the specified
stress on the bond, lead wire or terminals as required in the specified test method.
A calibrated measurement and indication of the applied stress in newtons (N) at the point of
failure should be provided by equipment capable of measuring stresses up to and including
100 mN with an accuracy of ±2,5 mN, stresses between 100 mN and 500 mN with an
accuracy of ±5 mN, and stresses exceeding 500 mN with an accuracy of ±2,5 % of the
indicated value.
2 Methods A and B (see also annex A)
2.1 Scope
This test is intended to be applied to the wire-to-die bond, wire-to-substrate bond, or the wire-
to-terminal bond inside the package of wire-connected semiconductor devices bonded by
soldering, thermocompression, ultrasonic and other related techniques.

60749-22 © IEC:2002 – 13 –
2.2 General description of the test
2.2.1 Method A: Wire pull (applied to bonds separately)
The wire connecting the die or substrate should be cut so as to provide two ends accessible
for a pull test. In the case of short wire runs, it may be necessary to cut the wire close to one
termination in order to allow the pull test at the opposite termination. The wire should be
gripped in a suitable device and simple pulling action applied to the wire or to the device
(with the wire clamped) in such a manner that the force is applied within 5° of the parallel to
the surface of the die or substrate in the case of a stitch bond.
2.2.2 Method B: Wire pull (applied to two bonds simultaneously)
A hook should be inserted under the lead wire connecting the die or substrate to the terminal,
and a pull applied to the hook with the device clamped. The pulling force is applied
approximately in the middle of the wire in a direction within 5° of the normal to the die or
substrate surface or normal to a straight line between the bonds.
2.2.3 The pulling force should be progressively increased until the wire or a bond breaks
(item a) in 2.2.4) or until the minimum force has been reached (item b) in 2.2.4).
2.2.4 Failure criteria
a) For determining acceptance, the value of the pulling force at which the wire or bond
breaks should be recorded and compared with that given in table 2 (see note).
For wire diameters not specified in table 2, the curves of figure 3 should be used to determine
the bond pull limit. The curves are only applicable to bond pulls normal to the die.
b) As an alternative procedure, the pulling force is increased to the specified minimum value
(see note). If neither the wire nor the bond is broken, the bond is considered to have
passed the test.
NOTE The pulling force should be modified where relevant (for example, for method B) by using the information
given in the annex.
2.2.5 Classification of failures
When specified, broken wires or bonds should be classified as follows:
a) wire break at neckdown point (reduction of section due to bonding process);
b) wire break at a point other than neckdown;
c) failure in bond (interface between wire and metallization) at the die;
d) failure in bond (interface between wire and metallization) at substrate, package post or
any point other than at the die;
e) metallization lifted from the die;
f) metallization lifted from the substrate or package post;
g) fracture of the die;
h) fracture of the substrate.
NOTE Method B is not recommended for the purpose of measuring the absolute value of the bond strength
(see annex A). However, it may be used for testing the bond quality on a comparative basis during the manu-
facturing process.
60749-22 © IEC:2002 – 15 –
3 Method C
3.1 Scope
This test is normally intended to be applied to bonds external to the device package.
3.2 Method C: Bond peel
The lead or terminal and the device package should be gripped or clamped in such a manner
that a peeling stress is exerted with the specified angle between the lead or terminal and the
board or substrate. Unless otherwise specified, an angle of 90° should be used.
3.3 The pulling force should be progressively applied until the lead (or terminal) or the bond
breaks (see 3.4.1) or until the minimum force has been reached (see 3.4.2).
3.4 Failure criteria
3.4.1 For determining acceptance, the value of the pulling force at which the bond breaks
should be recorded and compared with that given in table 2. For wire diameters not specified
in table 2, the curves of figure 3 should be used to determine the bond pull limit. The curves
are only applicable to bond pulls normal to the die. The result of the test is valid only if
the bond itself is the first to fail when the pulling force is applied. Only instances in which the
bond itself breaks shall be counted as failures.
3.4.2 As an alternative procedure, the pulling force is increased to the specified minimum
value. If neither the lead (or terminal) nor the bond is broken, the bond is considered to have
passed the test.
3.5 Classification of failures
When specified, broken leads (or terminals) or bonds should be classified as follows:
a) lead (or terminal) break at a deformation point (weld affected region);
b) lead (or terminal) break at a point not affected by the bonding process;
c) failure in the bond interface (in the solder, or at a point of weld interface between the lead
(or terminal) and the board or the substrate conductor to which the bond was made);
d) conductor lifted from the board or substrate;
e) fracture within the board or substrate.
4 Method D
4.1 Scope
This test is normally intended to be applied to internal bonds between a semiconductor die
and a substrate to which it is attached in a face-bonded configuration. It may also be used to
test the bonds between a substrate and an intermediate carrier or secondary substrate on
which the die is mounted.
60749-22 © IEC:2002 – 17 –
4.2 Method D: Bond shear (applied to flip chip)
A suitable tool or wedge should be brought in contact with the die (or carrier) at a point just
above the primary substrate and a force applied perpendicular to one edge of the die
(or carrier) and pa
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