SIST EN IEC 60749-22-2:2026

SLOVENSKI STANDARD
oSIST prEN IEC 60749-22-2:2025
01-februar-2025
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 22-2.
del: Moč vezi - Preskusne metode za strižno vezavo žice
Semiconductor devices - Mechanical and climatic test methods - Part 22-2: Bond
strength - Wire bond shear test methods
Ta slovenski standard je istoveten z: prEN IEC 60749-22-2:2024
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
oSIST prEN IEC 60749-22-2:2025 en
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

oSIST prEN IEC 60749-22-2:2025

oSIST prEN IEC 60749-22-2:2025
47/2889/CDV
COMMITTEE DRAFT FOR VOTE (CDV)
PROJECT NUMBER:
IEC 60749-22-2 ED1
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2024-12-13 2025-03-07
SUPERSEDES DOCUMENTS:
47/2884/RR
IEC TC 47 : SEMICONDUCTOR DEVICES
SECRETARIAT: SECRETARY:
Korea, Republic of Mr Cheolung Cha
OF INTEREST TO THE FOLLOWING COMMITTEES: HORIZONTAL FUNCTION(S):

ASPECTS CONCERNED:
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING

This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of
which they are aware and to provide supporting documentation.
Recipients of this document are invited to submit, with their comments, notification of any relevant “In Some
Countries” clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is
the final stage for submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Semiconductor devices - Mechanical and climatic test methods - Part 22-2: Bond strength -
Wire bond shear test methods
PROPOSED STABILITY DATE: 2031
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1 CONTENTS
3 FOREWORD . 4
4 1 Scope . 6
5 2 Normative references . 6
6 3 Terms and definitions . 7
7 4 Apparatus and material required . 8
8 4.1 Inspection equipment . 8
9 4.2 Measurement equipment . 8
10 4.3 Workholder . 9
11 4.4 Bond shear equipment . 9
12 4.5 Bond shear chisel tool setup . 9
13 5 Procedure . 9
14 5.1 Calibration . 9
15 5.2 Visual examination of bonds to be tested after decapsulation . 10
16 5.2.1 Usage of visual examination . 10
17 5.2.2 Bond pad examination and acceptability criteria for both Al and Cu bond
18 pad metallization . 10
19 5.2.3 Copper bond and Cu wire examination and acceptability criteria . 10
20 5.3 Measurement of the ball bond diameter to determine the ball bond shear
21 failure criteria . 10
22 5.4 Performing the bond shear test . 11
23 5.5 Examination of sheared bonds . 11
24 5.6 Bond shear codes for ball bonds . 13
25 5.6.2 Type 2 - bond shear . 16
26 5.6.3 Type 3 – cratering . 18
27 5.6.4 Type 4 - arm contacts specimen (bonding surface contact) . 19
28 5.6.5 Type 5 - shearing skip . 20
29 5.6.6 Type 6 - bond pad (or bonding surface) lift . 20
30 5.7 Bond shear data . 21
31 6 Summary . 21
32 Annex A (informative) Performing this test method on “stitch on ball” bonds . 22
33 Annex B (informative) Performing this test method on ultrasonic wedge bonds . 24
34 B.1 Scope (Additional text to clause1): . 24
35 B.2 Terms and definitions. 24
36 B.3 Apparatus and equipment . 25
37 B.3.1 Bond shear equipment (Replaces 4.4) . 25
38 B.4 Procedure . 25
39 B.4.1 Performing the bond shear test (Replaces 5.4) . 25
40 B.4.2 Examination of sheared bonds (Replaces 5.5) . 25
41 B.5 Shear failure criteria for aluminium wedge bonds (Replaces 6) . 25
42 Annex C (informative) Performing shear testing when tool cannot reach below bond
43 centerline . 26
44 Annex D (informative) Concerns with decapsulation processes for devices with copper
45 wirebonds . 28
46 Annex E (informative) Bond contact area – Valid method for comparing shear force . 30
47 Bibliography . 32

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49 Figure 1 — Bond shear set-up for bond on die bonding pad (Similar setup for bonds on
50 other bonding surfaces, such as package substrate/leadframe) . 8
51 Figure 2 — Proper height placement of shear tool with respect to ball centre line . 9
52 Figure 3 — Ball bond measurement: side view and top view (for symmetrical vs.
53 asymmetrical) . 11
54 Figure 4 — Bond Shear Codes . 16
55 Figure 5 — Imprints on Al pad from lifted bonds with no evidence of shearing (Type 1) . 16
56 Figure 6 — Shear of aluminium pad (with copper wire) (Type 2 - Variation A) . 17
57 Figure 7 — Shear wholly within gold/aluminium intermetallic layer (Type 2 - Variation
58 B) 18
59 Figure 8 — Shear in bulk copper ball bond and at material interface (Type 2 - Variation
60 C) 18
61 Figure 9 — Shear wholly within gold ball bond (Type 2 - Variation D) . 18
62 Figure 10 — Shear wholly within Cu ball bond (Type 2 - Variation D) . 18
63 Figure 11 — Bond pad cratering after shear test . 19
64 Figure 12 — Bond pad cratering (pad and ball view) and validation of crack and thin Al
65 on another pad . 19
66 Figure 13 — Images of shear tool contacting the bonding surface (shear tool set too
67 low) 20
68 Figure 14 — Images of shearing skip (shear tool set too high) . 20
69 Figure A.1 — Top view of “stitch on ball” bond . 22
70 Figure A.2 — Side view of “stitch on ball” bond . 22
71 Figure A.3 — Die to die bonding . 23
72 Figure A.4 — “Reverse” bond, with ball on leadframe . 23
73 Figure C.1 — Passivation preventing proper height placement of shear tool . 26
74 Figure C.2 — Remnant due to shear tool placement above centerline . 26
75 Figure C.3a — Cross section showing excessive Al splash . 27
76 Figure C.3b — Excessive Al splash . 27
77 Figure D.1 — Images of copper ball bonds showing severe damage from etching
78 process . 28
79 Figure D.2 — Comparison images showing degree of Cu attack due to two different
80 etchants . 28
81 Figure D.3 — Stitch bond after decapsulation using laser ablation . 29
82 Figure D.4 — Die and wirebonds decapsulated using laser ablation . 29
83 Figure E.1 — Sample cross section of a copper wire bond . 30
84 Figure E.2 — Image analysis of pixel distribution within the fitted circle (represents
85 ball). Light grey distribution represents IMC, in this case coverage is 73 %. . 31
86 Figure E.3 — Images of “optical vs. SEM” correlation study . 31
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89 INTERNATIONAL ELECTROTECHNICAL COMMISSION
90 ____________
92 SEMICONDUCTOR DEVICES –
93 MECHANICAL AND CLIMATIC TEST METHODS –
95 Part 22-2: Bond strength - wire bond shear test methods
98 FOREWORD
99 1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
100 all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
101 co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
102 in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
103 Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
104 preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
105 may participate in this preparatory work. International, governmental and non-governmental organizations liaising
106 with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
107 Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
108 2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
109 consensus of opinion on the relevant subjects since each technical committee has representation from all
110 interested IEC National Committees.
111 3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
112 Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
113 Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
114 misinterpretation by any end user.
115 4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
116 transparently to the maximum extent possible in their national and regional publications. Any divergence between
117 any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
118 5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
119 assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
120 services carried out by independent certification bodies.
121 6) All users should ensure that they have the latest edition of this publication.
122 7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
123 members of its technical committees and IEC National Committees for any personal injury, property damage or
124 other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
125 expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
126 Publications.
127 8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
128 indispensable for the correct application of this publication.
129 9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of patent
130 rights. IEC shall not be held responsible for identifying any or all such patent rights.
131 IEC 60749-22-2 has been prepared by IEC technical committee 47: Semiconductor devices. It
132 is an International Standard.
133 This first edition together with the first edition of IEC 60749-22-1, cancels and replaces IEC
134 60749-22 published in 2002 and is based on JEDEC document JESD22-B116B. lt is used with
135 permission of the copyright holder, JEDEC Solid State Technology Association.
136 This edition includes the following significant technical changes with respect to the previous
137 edition:
138 Major update, including new techniques and use of new materials (e.g. copper wire) involving
139 a complete rewrite as two separate subparts (this document and IEC 60749-22-1)
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141 The text of this International Standard is based on the following documents:
Draft Report on voting
XX/XX/FDIS XX/XX/RVD
143 Full information on the voting for its approval can be found in the report on voting indicated in
144 the above table.
145 The language used for the development of this International Standard is English
146 This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
147 accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
148 at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
149 described in greater detail at www.iec.ch/publications.
150 The committee has decided that the contents of this document will remain unchanged until the
151 stability date indicated on the IEC website under webstore.iec.ch in the data related to the
152 specific document. At this date, the document will be
153 • reconfirmed,
154 • withdrawn,
155 • replaced by a revised edition, or
156 • amended.
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159 SEMICONDUCTOR DEVICES –
160 MECHANICAL AND CLIMATIC TEST METHODS –
162 PART 22-2: BOND STRENGTH - WIRE BOND SHEAR TEST METHODS
165 1 Scope
166 This test method establishes a means for determining the strength of a ball bond to a die or
167 package bonding surface and may be performed on pre-encapsulation or post-encapsulation
168 devices. This measure of bond strength is extremely important in determining two features:
169 the integrity of the metallurgical bond which has been formed, and
170 the quality of ball bonds to die or package bonding surfaces.
171 This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to
172 76 µm (0,000 6“to 0,003”).
173 This test method can only be used when the bonds are large enough to allow for proper contact
174 with the shear test chisel and when there are no adjacent interfering structures that would hinder
175 the movement of the chisel. For consistent shear results the ball height must be at least 4,0 µm
176 (0,000 6 “) for ball bonds, which is the current state of the art for bond shear test equipment at
177 the time of this revision.
178 This test method can also be used on ball bonds that have had their wire removed and on to
179 which a 2nd bond wire (typically a stitch bond) is placed. This may be known as “stitch on ball”
180 and “reverse bonding”. See Annex A for additional information.
181 The wire bond shear test is destructive. It is appropriate for use in process development,
182 process control, and/or quality assurance.
183 This test method may be used on ultrasonic (wedge) bonds, however its use has not been
184 shown to be a consistent indicator of bond integrity. See Annex B for information on performing
185 shear testing on wedge bonds.
186 This test method does not include bond strength testing using wire bond pull testing. Wire bond
187 pull testing is described in IEC 60749-22-1, Bond strength testing – Wire bond pull test methods.
189 2 Normative references
190 The following documents are referred to in the text in such a way that some or all of their content
191 constitutes requirements of this document. For dated references, only the edition cited applies.
192 IEC 60749-22-1, Semiconductor devices – Mechanical and climatic test methods – Part 22-1:
193 Bond strength testing – Wire bond pull test methods.
194 For undated references, the latest edition of the referenced document (including any
195 amendments) applies.
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196 Also see Bibliography (informative) references.
197 3 Terms and definitions
198 For the purposes of this document, the following terms and definitions apply.
199 ISO and IEC maintain terminology databases for use in standardization at the following
200 addresses:
201 • IEC Electropedia: available at https://www.electropedia.org/
202 • ISO Online browsing platform: available at https://www.iso.org/obp
203 3.1
204 ball bond
205 adhesion or welding of a small diameter wire, typically gold or copper, to a bonding surface
206 metallization, usually an aluminium alloy, using a thermosonic wire bond process
207 Note 1 to entry: The ball bond includes the enlarged spherical, or nail-head, portion of the wire (provided by the
208 flame-off and first bonding operation), the underlying bonding surface and the ball bond-bonding surface metallurgical
209 weld interface.
210 Note 2 to entry: Gold wire implies a gold alloy in which the gold content is likely 99% or greater. Copper wire
211 implies a copper alloy of similarly high copper content and also includes copper wire with a very thin coating of
212 palladium]
213 Note 3 to entry: At the time of this revision, other wire materials and wire coatings are being evaluated, but there is
214 not enough information collected to confirm that the fail modes listed in this test method are valid for any of the new
215 wire types.
216 3.2
217 bonding surface
218 either 1) die pad metallization or 2) package surface metallization to which the wire is ball
219 bonded
220 3.3
221 bond shear
222 process in which an instrument uses a chisel-shaped tool to shear or push a ball bond off the
223 bonding surface (see Figure 1)
224 NOTE The force required to cause this separation is recorded and is referred to as the bond shear force. The bond
225 shear force of a ball bond, when correlated to the diameter of the ball bond, is an indicator of the quality of the
226 metallurgical bond between the ball bond and the bonding surface metallization.

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228 Figure 1 — Bond shear set-up for bond on die bonding pad
229 (Similar setup for bonds on other bonding surfaces, such as package
230 substrate/leadframe)
231 3.4
232 shear tool; shear arm
233 chisel (made of tungsten carbide or an equivalent material with similar mechanical properties)
234 with specific angles on the bottom and back of the tool to ensure a shearing action
235 3.5
236 stitch bond
237 second bond during the ball (thermosonic) bonding process, in which the wire is typically
238 bonded to the package bonding surface.
239 Note 1 to entry: A stitch bond may also be referred to as a crescent bond.
240 Note 2 to entry: For some unique constructions (e.g., “stitch on ball”), the second bond may be formed on top of
241 another ball bond, from which the wire has been removed.
242 3.6
243 wedge bond
244 adhesion or weld of a thin wire, typically aluminium, copper, or gold to a die pad metallization
245 or the package bonding surface, usually a plated leadframe post or finger, using an ultrasonic
246 wire bonding process
247 Note to entry: See Annex B for information on performing shear testing on wedge bonds.
248 4 Apparatus and material required
249 4.1 Inspection equipment
250 An optical microscope system or scanning electron microscope providing a minimum of 70X
251 magnification. A higher magnification may be necessary for 15 µm (0,000 6”) diameter wire.
252 4.2 Measurement equipment
253 An optical microscope/measurement system capable of measuring the bond diameter to within
254 ± 2,54 µm (0,000 1”).
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255 4.3 Workholder
256 Fixture used to hold the part being tested parallel to the shearing plane and perpendicular to
257 the shear tool. The fixture shall also eliminate part movement during bond shear testing. If using
258 a calliper controlled workholder, place the holder so that the shear motion is against the positive
259 stop of the calliper. This is to ensure that the recoil movement of the calliper controlled
260 workholder does not influence the bond shear test.
261 4.4 Bond shear equipment
262 The bond shear equipment must be capable of repeatable, precision placement of the shearing
263 tool with respect to the ball height and the bonding surface. The specified distance (h) above
264 the topmost part of the bonding surface (e.g., passivation layer on IC, solder mask on organic
265 substrate) shall ensure the shear tool does not contact the bonding surface (e.g., top
266 passivation or polyimide layer, solder mask) and shall be less than the distance from the
267 topmost part of the bonding surface to the centre line (CL) of the ball bond (see Figure 2). See
268 Annex C for guidance when the passivation, or other structures on the die surface and
269 excessive Al splash prevent the shear tool from contacting the ball below the centre line.
271 Figure 2 — Proper height placement of shear tool with respect to ball centre line
272 4.5 Bond shear chisel tool setup
273 When choosing the proper chisel for the bond being sheared items to consider include but are
274 not limited to flat shear face, sharp shearing edge, shearing width of a minimum of 1,2X the
275 bond diameter, and bond length. The sample and chisel face should be clean and free of chips
276 or other defects that will interfere with the shearing test.
277 Bonds should also be examined to determine if adjacent interfering structures are far enough
278 away to allow suitable placement and clearance (above the bonding surface and between
279 adjacent bonds) for the shear test tool.
280 5 Procedure
281 5.1 Calibration
282 Before performing the bond shear test, it must be determined that the equipment has been
283 calibrated in accordance with manufacturer's specifications and is presently in calibration.
284 Recalibration is required if the equipment is moved to another location.

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285 5.2 Visual examination of bonds to be tested after decapsulation
286 5.2.1 Usage of visual examination
287 In addition to being a manufacturing process monitor, this test method can also be used to
288 assess bond strength of encapsulated devices after soldering operations or after reliability
289 stress testing. To do this, the encapsulation material needs to be removed in a manner that
290 does not significantly degrade the wire, the bond, the bonding interface, or the bonding surface.
291 Shear force values are often lower for bonds that have been decapsulated, and therefore cannot
292 be compared to values for similar, unencapsulated bonds. If the decapsulation process is well
293 controlled and repeatable, which is the case for gold wire, then this test method can be used
294 for lot-to-lot comparison; however, it may be hard to consistently control the decapsulation
295 process for copper wires to ensure the accuracy of the results. For Cu wires, the effectiveness
296 of etch has been seen to vary due to the encapsulation material and the level of reliability stress
297 testing performed on the samples. See Annex D for additional information regarding the
298 decapsulation process of devices with Cu wire bonds.
299 Bonds must also be examined to determine that enough encapsulation material has been
300 removed to allow suitable placement and clearance (above the bonding surface and between
301 adjacent bonds) for the shear test tool.
302 5.2.2 Bond pad examination and acceptability criteria for both Al and Cu bond pad
303 metallization
304 If performing bond shear testing on a device which has been opened using wet chemical and/or
305 dry etch techniques, the bond pads shall be examined to ensure there is no absence of
306 metallization on the bonding surface area due to chemical etching, and wire bonds are attached
307 to the bonding surface. Those bonds on Al or Cu bond pads with significant chemical attack or
308 absence of metallization shall not be used for ball shear testing. The shear results for any
309 damaged bonds found during post shear inspection may also be excluded. It is possible that
310 wire bonds on bonding surfaces without degradation from chemical attack may not be attached
311 to the bonding surface due to other causes (e.g., package stress). These wire bonds are
312 considered valid and shall be included in the shear data as a zero (0) shear force value.
313 5.2.3 Copper bond and Cu wire examination and acceptability criteria
314 If performing bond shear testing on a part with copper wires, the Cu bond and Cu wire shall be
315 examined before or after the shear test to ensure there is no significant loss of metal or other
316 damage due to decapsulation process that might affect the results of the shear test. The shear
317 result can be excluded for a Cu bond or Cu wire with significant chemical attack or other damage
318 due to the decapsulation process.
319 Annex D provides additional information to assess what level of damage is acceptable.
320 5.3 Measurement of the ball bond diameter to determine the ball bond shear failure
321 criteria
322 Once the bonding surfaces have been examined and before performing bond shear testing, the
323 diameter of all ball bonds to be tested shall be measured and recorded. The ball is measured
324 at the widest point of the ball bond. For symmetrical ball bonds (those basically round) only one
325 measurement per bond needs to be taken.
326 For asymmetrical bonds, determine the average diameter using both the largest (d large) and the
327 smallest (d ) diameter values (see Figure 3). These two ball bond diameter measurements
small
328 shall be used to determine the mean, or average, diameter value. The resulting mean, or
329 average, ball bond diameter shall then be used to establish the failure criteria as defined in
330 bond shear qualification standards.

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332 Figure 3 — Ball bond measurement: side view and top view (for symmetrical vs.
333 asymmetrical)
334 To determine whether the sheared bond has passed the acceptability criteria that is stated in
335 JESD47, the shear force must be divided by the ball bond area. The equation for area is:
(1)
A=πr =π d /4
( )
336 Where d is the above measured diameter (or mean diameter for an asymmetrical ball bond) for
337 the bond being sheared.
338 To facilitate faster testing a statistically representative ball bond diameter may be used with all
339 of the bonds sheared within a sample when calculating the shear force per unit area for each
340 bond sheared (in lieu of using the corresponding ball diameter for each ball sheared to calculate
341 its shear force per unit area value).
342 5.4 Performing the bond shear test
343 The bond shear equipment shall pass all self-diagnostic tests before beginning the test. The
344 bond shear equipment and test area shall be free of excessive vibration or movement. Examine
345 the shear tool to verify it is in good condition and is not bent or damaged. Check the shear tool
346 to verify it is in the up position.
347 Adjust the workholder to match the part being tested. Secure the part to the workholder. Make
348 sure the surface of the die is parallel to the shearing plane of the shear tool. It is important that
349 the shear tool does not contact the surface of the die or adjacent structures during the shearing
350 operation as this will give incorrect high readings.
351 Position the part so that the bond to be tested is located adjacent to the shear tool. Lower the
352 shear tool, or raise the part depending upon shear equipment used, to approximately the height
353 from which the bond is to be sheared but not contacting the surface. (See Figure 2, distance
354 “h”).
355 Position the ball bond to be tested so that the shear motion will travel perpendicular to the
356 surface edge. Position the shear tool within approximately the diameter of one ball of the bond
357 to be shear tested and shear the bond.
358 Historical data shows that variation in shear speed may have a slight effect on the shear results
359 for gold ball bonds. Care must be taken to ensure that if test results from different wire bonding
360 lots are to be compared that any variation in test speed be taken into account.
361 5.5 Examination of sheared bonds
362 All bonds shall be sheared in a planned/defined sequence so that later visual examination can
363 determine which shear values should be eliminated because of an improper shear. The bonds
364 shall be examined in accordance with the codes in 5.6 using at least 70X magnification to

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365 determine if the shear tool skipped over the bond (type 5) or the tool scraped or ploughed into
366 the surface of the die (type 4). Type 4 and type 5 defective shear conditions are invalid, and
367 shall be eliminated from the shear data (see Figure 4).
368 Sheared bonds in which a type 3 cratering condition has occurred shall be investigated further
369 to determine whether the cracking and/or cratering is due to a preexisting condition in the silicon
370 and/or metallization under the bond pad prior to the bonding operation or was due to the act of
371 bonding. Cratering resulting from the bonding process shall be considered valid and included
372 in the shear data. Any bonds with a preexisting condition in the silicon and/or metallization
373 under the bond pad are invalid for this test method and shall not be included with the shear
374 data. If a preexisting condition in the silicon and/or metallization under the bond pad is found
375 to cause cratering, it must be addressed.

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376 5.6 Bond shear codes for ball bonds

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Wire bond separated from
Wire bond separated from bonding
bonding surface and no
surface. Little or no intermetallic
evidence of bond formation
formed during bonding operation

Slight imprint on
Bonding surface
bonding surface
TYPE 1: Bond Lift
TYPE 1: Bond Lift
Copper/Aluminum, Copper/Copper,
Gold/Aluminum
and Gold/Gold
Layer of bonding surface
metalization remains on
Wire bond separated from
wire bond
bonding surface and no
evidence of bond formation
Bonding surface has
some metal removed,
Slight imprint on
and visual evidence
leadframe/substrate
of metal shear
bonding surface
TYPE 1: Bond Lift
TYPE 2:  Bond Shear – All metal systems
All metal systems on leadframe or Variation A – Separat ion within bonding
substrate
surface metalization
Separation at interface with
bonding surface and (mandatory)
Intermetalic formation on wire bond
evidence of shear on bonding
and bonding surface. surface.
Bonding surface Bonding surface
TYPE 2: Bond Shear – Gold/Aluminum
TYPE 2: Bond Shear – All metal systems
Variation B – Separation wholly within and surfaces, except Gold/Aluminum
intermetalic layer
Variation B – Separation at bonding surface

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Major portion of wire bond
Shear occurs at both the material
Interface and within bulk material.
Ball or Wedge bonding
weld area intact. Visual
evidence of metal shear
TYPE 2: Bond Shear – All metal systems
TYPE 2:  Bond Shear – All metal systems
and bonding surfaces
Variation D – Separation within ball bond
Variation C – Separation at material

interface and within bulk material

Residual bonding surface
Major portion of wire bond
and substrate (bulk) material
attached to wire bond.
Arm contacted bonding
Ball or Wedge bonding
surface metallization
Bonding surface lifted taking
weld area intact. Visual
instead of wire bond.
portion of substrate (bulk)
evidence of metal shear
material.
Bonding surface separated
from die surface.
TYPE 2:  Bond Shear – All metal systems
TYPE 3:  Cratering TYPE 4:  Bonding Surface Contact
on leadframe or substrate
Variation D – Separation within ball bond

Underlying bonding pad
Residual bonding surface
metallization remains with
and substrate (bulk) material
Minor portion of wire bond
the ball bond
attached to wire bond.
attached to wire.
Arm contacted bonding
surface metallization
Bonding surface metallization
Bonding surface lifted taking
Wire bond sheared too
separated from die surface.
instead of wire bond.
portion of substrate (bulk)
high. Only portion of
material.
wire bond removed
Bonding surface separated
from die surface.
TYPE 3:  Cratering TYPE 4:  Bonding Surface Contact
TYPE 5:  Shearing Skip TYPE 6:  Bonding Pad Surface Lift

oSIST prEN IEC 60749-22-2:2025
IEC CDV 60749-22-2 © IEC 2024 – 16 – 47/2889/CDV
Metallization on leadframe
Underlying bonding pad
or substrate bonding pad
metallization remains with
remains with the ball bond
Minor portion of wire bond
the ball bond
attached to wire.
Bonding surface metallization
separated from leadframe or
Bonding surface metallization
substrate.
Wire bond sheared too
separated from die surface.
high. Only portion of
wire bond removed
TYPE 6:  Leadframe or Substrate bond pad
TYPE 5:  Shearing Skip TYPE 6:  Bonding Pad Surface Lift or bonding surface metalization lift

377 Figure 4 — Bond Shear Codes
378 5.6.1 Type 1 - bond lift: A separation of the entire wire bond from the bonding surface with
379 only an imprint being left on the bonding surface (see Figure 5).
380 NOTE A bond lift may require an assessment of the bonder settings and/or cleanliness or integrity of the bonding
381 surface.
382 5.6.1.1 Type 1 - bond lift - gold/aluminium: Has the additional requirement of very little
383 evidence of intermetallic formation, welding, or shearing of the bonding surface metallization.
384 5.6.1.2 Type 1 - bond lift - copper/aluminium, copper/copper, and gold/gold: Has the
385 additional requirement of no visual evidence of shearing of the bonding surface metallization.
386 NOTE 1 The copper/aluminium system forms a very thin intermetallic layer that is not generally visible. When the
387 bond wire and the bonding surface are the same material (e.g., copper/copper, gold/gold) no intermetallic is formed.
388 NOTE 2 Copper/copper includes the bonding of Cu ball bonds onto bond pad structures that have Cu metallization
389 with a barrier metal. The barrier metal may also include other thin layers to prevent oxidation of the barrier metal.
390 Some commonly used structures include Cu-NiPd and Cu-NiPdAu.
391 5.6.1.3 Type 1 - bond lift from leadframe/substrate: Has the additional requirement of
392 no visual evidence of disturbance of the bonding surface metallization.
394 Figure 5 — Imprints on Al pad from lifted bonds with no evidence of shearing (Type 1)
395 5.6.2 Type 2 - bond shear
396 5.6.2.1 Type 2 - bond shear - gold/aluminium
397 A separation of the wire bond with visual evidence of shearing of the bulk metal where:

oSIST prEN IEC 60749-22-2:2025
IEC CDV 60749-22-2 © IEC 2024 – 17 – 47/2889/CDV
398 a) a thin layer of the bonding surface metallization remains with the sheared wire bond and
399 there is visual shearing of the bonding surface metallurgy (see Figure 6);
400 b) the shear occurs wholly within the intermetallic layer with intermetallics remaining on the
401 bonding surface and with the sheared wire bond (see Figure 7);
402 c) the shear occurs on multiple planes, partially within the intermetallic layer and within the
403 bulk material; or
404 d) the shear occurs above the intermetallic layer and solely within bulk material of the sheared
405 wire bond (see Figure 9).
406 5.6.2.2 Type 2 - bond shear - copper/aluminium, copper/copper, and gold/gold
407 A separation of the wire bond with visual evidence of shearing of the bulk metal where:
408 a) a thin layer of the bonding surface metallization remains with the sheared wire bond and
409 there is visual shearing of the bonding surface metallurgy (see Figure 6);
410 b) the shear occurs wholly at the interface with the bonding surface and there must be
411 evidence of sheared metal on the bonding surface.
412 c) the shear occurs on multiple planes, partially at the interface with the bonding surface and
413 partially within the bulk material, (see Figure 8); or
414 d) the shear occurs above the material interface and solely within bulk material of the sheared
415 wire bond (see Figure 10).
416 NOTE The copper/aluminium system forms a very thin intermetallic layer that is not generally visible. When the
417 bond wire and the bonding surface are the same material (e.g., copper/copper, gold/gold) no intermetallic is formed.
418 For this reason, the definition of Variation B for 5.6.2.2 (and 5.6.2.3) does not use the term intermetallic and thus is
419 different from 5.6.2.1.
420 5.6.2.3 Type 2 - bond shear on leadframe/substrate
421 A separation of the wire bond with visual evidence of shearing of the bulk metal where:
422 a) the shear occurs wholly at the interface with the bonding surface and there must be
423 evidence of sheared metal on the bonding surface.
424 b) the shear occurs in both the material interface and within the bulk material, and a portion of
425 each remains on the bonding surface and with the sheared wire bond (see Figure 7); or
426 c) the shear occurs above the material interface and solely within bulk material of the sheared
427 wire bond.
429 Figure 6 — Shear of aluminium pad (with copper wire) (Type 2 - Variation A)

oSIST prEN IEC 60749-22-2:2025
IEC CDV 60749-22-2 © IEC 2024 – 18 – 47/2889/CDV
431 Figure 7 — Shear wholly within gold/aluminium intermetallic layer (Type 2 - Variation
432 B)
434 Figure 8 — Shear in bulk copper ball bond and at material interface (Type 2 - Variation
435 C)
437 Figure 9 — Shear wholly within gold ball bond (Type 2 - Variation D)
439 Figure 10 — Shear wholly within Cu ball bond (Type 2 - Variation D)
440 5.6.3 Type 3 – cratering
441 A condition under the die pad metallization in which the insulating layer (oxide or interlayer
442 dielectric) and the bulk material (silicon) separate or chip out (see Figure 11).

oSIST prEN IEC 60749-22-2:2025
IEC CDV 60749-22-2 © IEC 2024 – 19 – 47/2889/CDV
443 NOTE 1 Separation interfaces that show pits or depressions in the insulating layer (not extending into the bulk) are
444 not considered craters.
445 NOTE 2 Cratering can be caused by several factors including the wire bonding operation, the post -bonding
446 processing, and even the act of shear testing itself.
447 NOTE 3 Detailed failure analysis is required to determine whether a cratering failure is due to a preexisting condition
448 in the silicon and/or metallization under the bond pad or due to the bonding process (see Figure 12). Any bonds that
449 are found to have a preexisting silicon issue are invalid for this test method and their results shall not be included
450 with the shear data, but the preexisting condition must be addressed.
452 SEM image of cratering
454 Two optical images of cratering
455 Figure 11 — Bond pad cratering after shear test
457 Figure 12 — Bond pad cratering (pad and ball view) and validation of crack and
458 thin Al on another pad
459 5.6.4 Type 4 - arm contacts specimen (bonding surface contact)
460 The shear tool cont
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