SIST EN IEC 60747-16-9:2025

SLOVENSKI STANDARD
01-januar-2025
Polprevodniški elementi - 16-9. del: Mikrovalovna integrirana vezja - Fazni
menjalniki (IEC 60747-16-9:2024)
Semiconductor devices - Part 16-9: Microwave integrated circuits - Phase shifters (IEC
60747-16-9:2024)
Halbleiterbauelemente - Teil 16-9: Integrierte Mikrowellenschaltungen - Phasenschieber
(IEC 60747-16-9:2024)
Dispositifs à semiconducteurs - Partie 16-9: Circuits intégrés hyperfréquences -
Déphaseurs (IEC 60747-16-9:2024)
Ta slovenski standard je istoveten z: EN IEC 60747-16-9:2024
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
31.200 Integrirana vezja, Integrated circuits.
mikroelektronika Microelectronics
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

EUROPEAN STANDARD EN IEC 60747-16-9

NORME EUROPÉENNE
EUROPÄISCHE NORM November 2024
ICS 31.080.99
English Version
Semiconductor devices - Part 16-9: Microwave integrated
circuits - Phase shifters
(IEC 60747-16-9:2024)
Dispositifs à semiconducteurs - Partie 16-9: Circuits Halbleiterbauelemente - Teil 16-9: Integrierte
intégrés hyperfréquences - Déphaseurs Mikrowellenschaltungen - Phasenschieber
(IEC 60747-16-9:2024) (IEC 60747-16-9:2024)
This European Standard was approved by CENELEC on 2024-11-13. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.

European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2024 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60747-16-9:2024 E

European foreword
The text of document 47E/835/FDIS, future edition 1 of IEC 60747-16-9, prepared by TC 47X
"Semiconductors and Trusted Chips Implementation" was submitted to the IEC-CENELEC parallel
vote and approved by CENELEC as EN IEC 60747-16-9:2024.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2025-11-30
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2027-11-30
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60747-16-9:2024 was approved by CENELEC as a
European Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standard indicated:
IEC 60747-16-1:2001 NOTE Approved as EN 60747-16-1:2002 (not modified)
IEC 60747-16-4:2004 NOTE Approved as EN 60747-16-4:2004 (not modified)
IEC 60747-16-6:2019 NOTE Approved as EN IEC 60747-16-6:2019 (not modified)

Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1 Where an International Publication has been modified by common modifications, indicated by (mod), the
relevant EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available
here: www.cencenelec.eu.
Publication Year Title EN/HD Year
IEC 60747-1 2006 Semiconductor devices - Part 1: General - -
+ A1 2010  - -
IEC 60747-4 2007 Semiconductor devices - Discrete devices - - -
Part 4: Microwave diodes and transistors
+ A1 2017  - -
IEC 61340-5-1 -  Electrostatics - Part 5-1: Protection of EN IEC 61340-5-1 -
electronic devices from electrostatic
phenomena - General requirements
IEC/TR 61340-5-2 -  Electrostatics - Part 5-2: Protection of CLC/TR 61340-5-2 -
electronic devices from electrostatic
phenomena - User guide
IEC 60747-16-9 ®
Edition 1.0 2024-10
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-9: Microwave integrated circuits – Phase shifters

Dispositifs à semiconducteurs –

Partie 16-9: Circuits intégrés hyperfréquences – Déphaseurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99  ISBN 978-2-8322-9682-0

– 2 – IEC 60747-16-9:2024 © IEC 2024
CONTENTS
FOREWORD . 5
1 Scope . 7
2 Normative references . 7
3 Terms and definitions . 7
4 Essential ratings and characteristics . 10
4.1 General requirements . 10
4.1.1 Circuit identification and types . 10
4.1.2 General function description . 10
4.1.3 Manufacturing technology . 10
4.1.4 Package identification . 10
4.2 Application description . 10
4.2.1 Conformance to system and/or interface information . 10
4.2.2 Overall block diagram . 11
4.2.3 Reference data . 11
4.2.4 Electrical compatibility . 11
4.2.5 Associated devices . 11
4.3 Specification of the function . 11
4.3.1 Detailed block diagram – Functional blocks . 11
4.3.2 Identification and function of terminals . 11
4.3.3 Function description . 12
4.4 Limiting values (absolute maximum rating system) . 12
4.4.1 Requirements . 12
4.4.2 Electrical limiting values . 13
4.4.3 Temperatures . 13
4.5 Operating conditions (within the specified operating temperature range) . 14
4.6 Electrical characteristics . 14
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 15
5 Measuring methods . 15
5.1 General . 15
5.1.1 General precautions . 15
5.1.2 Characteristic impedance . 15
5.1.3 Handling precautions . 16
5.1.4 Types . 16
5.2 Insertion loss (L ) . 16
ins
5.2.1 Purpose . 16
5.2.2 Measuring methods . 16
5.3 Phase shift value (S ) . 19
ph
5.3.1 Purpose . 19
5.3.2 Circuit diagram . 19
5.3.3 Principle of measurement . 19
5.3.4 Circuit description and requirements . 19
5.3.5 Precautions to be observed . 20
5.3.6 Measurement procedure . 20
5.3.7 Specified conditions . 20
5.4 Phase shift range (R ) . 20
ph
IEC 60747-16-9:2024 © IEC 2024 – 3 –
5.4.1 Purpose . 20
5.4.2 Circuit diagram . 20
5.4.3 Principle of measurement . 20
5.4.4 Circuit description and requirements . 20
5.4.5 Precautions to be observed . 21
5.4.6 Measurement procedure . 21
5.4.7 Specified conditions . 21
5.5 Phase shift accuracy (S ) . 21
acc
5.5.1 Purpose . 21
5.5.2 Circuit diagram . 21
5.5.3 Principle of measurement . 21
5.5.4 Circuit description and requirements . 21
5.5.5 Precautions to be observed . 22
5.5.6 Measurement procedure . 22
5.5.7 Specified conditions . 22
5.6 Phase shift accuracy root mean square (S ) . 22
acc(RMS)
5.6.1 Purpose . 22
5.6.2 Circuit diagram . 22
5.6.3 Principle of measurement . 22
5.6.4 Circuit description and requirements . 23
5.6.5 Precautions to be observed . 23
5.6.6 Measurement procedure . 23
5.6.7 Specified conditions . 23
5.7 Input return loss (L ) . 23
ret(in)
5.7.1 Purpose . 23
5.7.2 Measuring methods . 24
5.8 Output return loss (L ) . 26
ret(out)
5.8.1 Purpose . 26
5.8.2 Measuring methods . 26
5.9 Amplitude flatness (F ) . 28
amp
5.9.1 Purpose . 28
5.9.2 Measuring methods . 28
5.10 Insertion loss ripple (L ) . 30
rip
5.10.1 Purpose . 30
5.10.2 Measuring methods . 30
5.11 Input power at 1dB compression (P ) . 32
i(1dB)
5.11.1 Purpose . 32
5.11.2 Circuit diagram . 32
5.11.3 Principle of measurement . 32
5.11.4 Circuit description and requirements . 32
5.11.5 Precaution to be observed . 32
5.11.6 Measurement procedure . 32
5.11.7 Specified conditions . 33
5.12 Intermodulation distortion (two-tone) (P /P ) . 33
n 1
5.12.1 Purpose . 33
5.12.2 Circuit diagram . 33
5.12.3 Principle of measurement . 33

– 4 – IEC 60747-16-9:2024 © IEC 2024
5.12.4 Circuit description and requirements . 34
5.12.5 Precaution to be observed . 34
5.12.6 Measurement procedure . 34
5.12.7 Specified conditions . 35
5.13 Power at the intercept point (for intermodulation products) (P ) . 35
n(IP)
5.13.1 Purpose . 35
5.13.2 Circuit diagram . 35
5.13.3 Principle of measurement . 35
5.13.4 Circuit description and requirements . 35
5.13.5 Precaution to be observed . 35
5.13.6 Measurement procedure . 35
5.13.7 Specified conditions . 36
5.14 Turn on time(t ), turn off time(t ) . 36
on off
5.14.1 Purpose . 36
5.14.2 Circuit diagram . 36
5.14.3 Principle of measurement . 37
5.14.4 Circuit description and requirements . 38
5.14.5 Precaution to be observed . 38
5.14.6 Measurement procedure . 38
5.14.7 Specified conditions . 38
Bibliography . 39

Figure 1 – Example block diagram . 12
Figure 2 – Circuit diagram for the measurement of the insertion loss (method 1) . 16
Figure 3 – Circuit diagram for the measurement of the scattering parameters . 18
Figure 4 – Circuit diagram for the measurement of the return loss (method 1) . 24
Figure 5 – Circuit diagram for the measurement of intermodulation distortion . 34
Figure 6 – Circuit diagram for the measurement of switching times . 36
Figure 7 – Input and output waveforms . 37

Table 1 – Function of terminals . 12
Table 2 – Electrical limiting values . 13
Table 3 – Electrical limiting values in detail specification . 13
Table 4 –Temperatures . 14
Table 5 – Electrical characteristics . 14

IEC 60747-16-9:2024 © IEC 2024 – 5 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-9: Microwave integrated circuits –
Phase shifters
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC Publication(s)”). Their
preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
may participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence between
any IEC Publication and the corresponding national or regional publication shall be clearly indicated in the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) IEC draws attention to the possibility that the implementation of this document may involve the use of (a)
patent(s). IEC takes no position concerning the evidence, validity or applicability of any claimed patent rights in
respect thereof. As of the date of publication of this document, IEC had not received notice of (a) patent(s), which
may be required to implement this document. However, implementers are cautioned that this may not represent
the latest information, which may be obtained from the patent database available at https://patents.iec.ch. IEC
shall not be held responsible for identifying any or all such patent rights.
IEC 60747-16-9 has been prepared by subcommittee 47E: Discrete semiconductor devices, of
IEC technical committee 47: Semiconductor devices. It is an International Standard.
The text of this International Standard is based on the following documents:
Draft Report on voting
47E/835/FDIS 47E/842/RVD
Full information on the voting for its approval can be found in the report on voting indicated in
the above table.
The language used for the development of this International Standard is English.

– 6 – IEC 60747-16-9:2024 © IEC 2024
This document was drafted in accordance with ISO/IEC Directives, Part 2, and developed in
accordance with ISO/IEC Directives, Part 1 and ISO/IEC Directives, IEC Supplement, available
at www.iec.ch/members_experts/refdocs. The main document types developed by IEC are
described in greater detail at www.iec.ch/publications.
A list of all parts in the IEC 60747 series, published under the general title Semiconductor
devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under webstore.iec.ch in the data related to the
specific document. At this date, the document will be
• reconfirmed,
• withdrawn, or
• revised.
IEC 60747-16-9:2024 © IEC 2024 – 7 –
SEMICONDUCTOR DEVICES –
Part 16-9: Microwave integrated circuits –
Phase shifters
1 Scope
This part of IEC 60747 specifies the terminology, essential ratings, and characteristics, and
measuring methods of microwave integrated circuit phase shifters.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies.
For undated references, the latest edition of the referenced document (including any
amendments) applies.
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 60747-4:2007, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 60747-4:2007/AMD1:2017
IEC 61340-5-1, Electrostatics – Part 5-1: Protection of electronic devices from electrostatic
phenomena – General requirements
IEC TR 61340-5-2, Electrostatics – Part 5-2: Protection of electronic devices from electrostatic
phenomena – User guide
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminology databases for use in standardization at the following
addresses:
• IEC Electropedia: available at https://www.electropedia.org/
• ISO Online browsing platform: available at https://www.iso.org/obp
3.1
reference state
state where the phase difference between input and output of the phase shifter is a particular
value
Note 1 to entry: The condition for the reference state shall be specified.
Note 2 to entry: Though the phase difference at the reference state is usually maximum, median, or minimum value
of all available phase differences of the phase shifter, other values can be acceptable.

– 8 – IEC 60747-16-9:2024 © IEC 2024
3.2
phase shift state
state where the phase difference between input and output of the phase shifter is different from
that of the reference state (3.1)
3.3
insertion loss
L
ins
ratio of the input power to the output power, in the linear region of the power transfer curve
P (dBm) = f(P )
o i
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the insertion loss is expressed in decibels.
Note 3 to entry: The insertion loss in the reference state (3.1) is expressed by L .
ref
[SOURCE: IEC 60747-16-4:2004/AMD1:2009, 3.1, modified – "at the switched-on port" has
been deleted and Note 3 has been added.]
3.4
phase shift value
S
ph
difference between the phase in the phase shift state (3.2) and that in the reference state (3.1)
3.5
phase shift range
R
ph
difference between the maximum and minimum phase among all phase shift states (3.2) and
reference state (3.1)
3.6
phase shift accuracy
S
acc
difference between the measured and the nominal phase shift value (3.4)
3.7
phase shift accuracy root mean square
S
acc(RMS)
root-mean-square value of the differences between the measured and the nominal phase shift
values (3.4)
3.8
input return loss
L
ret(in)
ratio of the incident power at the input port to the reflected power at the input port
[SOURCE: IEC 60747-16-6:2019, 3.4]
3.9
output return loss
L
ret(out)
ratio of the incident power at the output port to the reflected power at the output port
[SOURCE: IEC 60747-16-6:2019, 3.5]

IEC 60747-16-9:2024 © IEC 2024 – 9 –
3.10
amplitude flatness
F
amp
difference between the maximum and minimum insertion loss (3.3) value in working frequency
range
3.11
insertion loss ripple
L
rip
difference between the maximum and minimum insertion loss (3.3) value among all phase shift
states
3.12
input power at 1 dB compression
P
i(1 dB)
input power where the insertion loss (3.3) increases by 1 dB compared with insertion loss (3.3)
in linear region
[SOURCE: IEC 60747-16-4:2004, 3.4]
3.13
intermodulation distortion
P / P
n 1
ratio of the nth order component of the output power to the fundamental component of the output
power
Note 1 to entry: The abbreviation "IMDn" is in common use for the nth order intermodulation distortion.
[SOURCE: IEC 60747-4:2007, 7.2.19 and IEC 60747-4:2007/AMD1:2017, 7.2.19]
3.14
power at the intercept point (for intermodulation products)
P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
component and the nth order intermodulation components, when the extrapolation is carried out
in a diagram showing the output power of the components (in decibels) as a function of the
input power (in decibels)
[SOURCE: IEC 60747-16-1:2001, 3.8]
3.15
switching time
3.15.1
turn on time
t
on
interval between the lower reference point on the leading edge of the control voltage and the
upper reference point on the leading edge of the envelope of the output voltage in the linear
region of the power transfer curve P (dBm) = f(P ) when the state of phase shifter changes from
o i
the reference state (3.1) to the phase shift state (3.2)
Note 1 to entry: In this region, ∆P (dBm) = ∆P (dBm).
o i
Note 2 to entry: Usually the reference is 50 % of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.6, modified – The words "when the state of phase shifter
changes from the reference state to the phase shift state" have been added, as well as Note 2
to entry.]
– 10 – IEC 60747-16-9:2024 © IEC 2024
3.15.2
turn off time
t
off
interval between the upper reference point on the trailing edge of the control voltage and the
lower reference point on the trailing edge of the envelope of the output voltage in the linear
region of the power transfer curve P (dBm) = f(P ) when the state of phase shifter changes from
o i
the reference state (3.1) to the phase shift state (3.2)
Note 1 to entry: In this region, ∆P (dBm)=∆P (dBm).
o i
Note 2 to entry: Usually the reference is 50 % of the amplitude.
[SOURCE: IEC 60747-16-4:2004, 3.7, modified – The words "when the state of phase shifter
changes from the reference state to the phase shift state" have been added, as well as Note 2.]
4 Essential ratings and characteristics
4.1 General requirements
4.1.1 Circuit identification and types
The identification of type (device name), the category of circuit and technology applied shall be
given in the detail specification.
Microwave phase shifters comprise two categories:
– Type A: Digital phase shifters;
– Type B: Analog phase shifters.
4.1.2 General function description
A general description of the function performed by the microwave integrated circuit phase
shifters and the features for the application shall be made.
4.1.3 Manufacturing technology
The manufacturing technology, e.g. semiconductor monolithic integrated circuit, thin film
integrated circuit, micro-assembly, etc. shall be stated in the detail specification. This statement
shall include details of the semiconductor technologies such as P N diode, heterostructure field
i
effect transistor (HFET), pseudomorphic high electronic mobility transistor (PHEMT), etc.
IEC 60747-4 shall be referred to for terminology and letter symbols, essential ratings and
characteristics and measuring methods of such microwave devices.
4.1.4 Package identification
The following statements shall be stated in the detail specification:
a) chip or packaged form;
b) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
c) principal package material, for example, metal, ceramic, plastic.
4.2 Application description
4.2.1 Conformance to system and/or interface information
It shall be stated in the detail specification whether the integrated circuit conforms to an
application system and/or to an interface standard or a recommendation.

IEC 60747-16-9:2024 © IEC 2024 – 11 –
Detailed information concerning application systems, equipment, and circuits such as radar
systems, communication systems, Wi-Fi wireless network systems, etc. should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems shall be given in the detail specification, if necessary.
4.2.3 Reference data
The most important properties that permit comparison between derivative types should be given
in the detail specification.
4.2.4 Electrical compatibility
It should be stated in the detail specification whether the integrated circuit is electrically
compatible with other particular integrated circuits, or families of integrated circuits, or whether
special interfaces are required.
Details should be given concerning the type of input and output circuits, e.g. input/output
impedances, DC block, open-drain, etc. Interchangeability with other devices, if any, should
also be given.
4.2.5 Associated devices
If applicable, the following should be stated:
– devices necessary for correct operation (list with type number, name and function);
– peripheral devices with direct interfacing (list with type number, name and function).
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave phase
shifters shall be given in the detail specification. The block diagram shall be composed of the
following:
a) functional blocks;
b) mutual interconnections among the functional blocks;
c) individual functional units within the functional blocks;
d) mutual interconnections among the individual functional blocks;
e) function of each external connection;
f) inter-dependence between the separate functional blocks.
The block diagram shall identify the function of each external connection and, where no
ambiguity can arise, also show the terminal symbols and/or numbers. If the encapsulation has
metallic parts, any connection to them from external terminals shall be indicated. The
connections with any associated external electrical elements shall be stated, where necessary.
As additional information, the complete electric circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. Rules governing such diagrams can be obtained from IEC 60617.
4.3.2 Identification and function of terminals
All terminals shall be identified on the block diagram (supply terminals, input or output terminals,
input/output terminals), as shown below.

– 12 – IEC 60747-16-9:2024 © IEC 2024
EXAMPLE:
Figure 1 – Example block diagram
The terminal functions shall be indicated in Table 1.
4.3.3 Function description
The function performed by the circuit shall be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (e.g., set-up method, preference, etc.);
– interruption handling.
Table 1 – Function of terminals
Terminal
Terminal
a b
Function of terminal
Terminal designation Function
symbol
number
Type of
input/output
input/output
c
identification d
circuits
a
A terminal designation to indicate the function of the terminal shall be given. Supply terminals, ground
terminals, blank terminals (with abbreviation NC), non-usable terminals (with abbreviation NU) shall be
distinguished.
b
A brief indication of the terminal function shall be given:
– each function of multi-role terminals, i.e. terminals having multiple functions;
– each function of integrated circuit selected by mutual P n connections, programming and/or application
i
of function selection data to the function selection P n, such as mode selection P n;
i i
– if the baseplate of the package is used as a ground terminal, the type of ground, e.g. analog ground,
digital ground shall be stated.
c
Input, output, input/output and multiplex output terminals shall be distinguished.
d
The type of input and output circuit, e.g. input/output impedances, with or without DC block, etc., shall be
distinguished.
4.4 Limiting values (absolute maximum rating system)
4.4.1 Requirements
These limiting values shall contain the following and be given in the detail specification:
– any interdependence of limiting conditions shall be specified;
– if externally connected and/or attached elements, for example heatsinks, have an influence
on the values of the ratings, the ratings shall be specified for the integrated circuit with the
elements connected and/or attached;

IEC 60747-16-9:2024 © IEC 2024 – 13 –
– if limiting values are exceeded for transient overload, the permissible excess and their
durations shall be specified;
– where minimum and maximum values differ during programming of the device, this shall be
stated;
– all voltages are referenced to a specified reference terminal (VSS, ground, etc.);
– if maximum and/or minimum values are quoted, the manufacturer shall indicate whether
these are referring to the absolute magnitude or to the algebraic value of the quantity;
– the ratings given shall cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-dependent,
this dependence shall be indicated.
4.4.2 Electrical limiting values
Electrical limiting values shall be specified shown in Table 2.
Table 2 – Electrical limiting values
Min. Max.
Parameters
+
Bias voltage(s) (where appropriate) +
+
Bias current(s) (where appropriate)
+
Control supply voltage(s) (where appropriate) +
+
Control supply current(s) (where appropriate)
+
Terminal voltage(s) (where appropriate) +
+
Terminal current(s) (where appropriate)
+
Input power
+
Power dissipation
It is necessary to select either bias voltage(s) or bias current(s), either terminal voltage(s) or terminal current(s).

The detail specification can indicate those values within Table 3.
Table 3 – Electrical limiting values in detail specification
Symbols Min. Max. Unit
a, b
Parameters
a
Where appropriate, in accordance with the type of circuit considered.
b
For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with respect to a special
electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement shall be made in the detail specification as
to whether the sequence in which these supplies are applied is significant: if so, the sequence shall be
stated in the detail specification;
– when more than one supply is needed, it shall be necessary to state the combinations of ratings for
these supply voltages and currents.

4.4.3 Temperatures
The detail specification may indicate the following temperature values within Table 4:
a) operating temperature (ambient or reference-point temperature);
b) storage temperature;
c) channel temperature;
d) lead temperature (for soldering).

– 14 – IEC 60747-16-9:2024 © IEC 2024
Table 4 –Temperatures
Symbols Min. Max. Unit
a
Parameters
a
Where appropriate, in accordance with the type of circuit considered.

4.5 Operating conditions (within the specified operating temperature range)
The following operating conditions shall not be inspected, but may be used for quality
assessment purposes:
a) power supplies: positive and/or negative values (where appropriate);
b) initialization sequences (where appropriate), if special initialization sequences are
necessary, power supply sequencing and initialization procedure shall be specified;
c) input voltage(s) (where appropriate);
d) output current(s) (where appropriate);
e) voltage and/or current of other terminal(s);
f) external elements (where appropriate);
g) operating temperature range;
h) operating frequency range;
i) phase shift bit;
j) phase shift step.
4.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified in the detail specification. Each characteristic shall be stated in the detail specification,
either:
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
The parameters should be specified according to the type as shown in Table 5.
Table 5 – Electrical characteristics
Parameters Min. Typ. Max. Types
A B
Bias supply operating current (where appropriate) + + + +
Control supply operating current (where appropriate) + + + +
Insertion loss (L )
+ + + +
ins
Phase shift value (S )
+ + + + +
ph
Phase shift range (R )
+ + + + +
ph
Phase shift accuracy (S )
+ + + +
acc
Phase shif
...