IEC 60747-8:2010
(Main)Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
IEC 60747-8:2010 gives standards for the following categories of field-effect transistors:
- type A: junction-gate type;
- type B: insulated-gate depletion (normally on) type;
- type C: insulated-gate enhancement (normally off) type.
The main changes with respect to the previous edition are listed below.
a) "Clause 3 Classification" was moved and added to Clause 1.
b) "Clause 4 Terminology and letter symbols" was divided into "Clause 3 Terms and definitions" and "Clause 4 Letter symbols" was amended with additions and deletions.
c) Clause 5, 6 and 7 were amended with necessary additions and deletions.
This publication is to be read in conjunction with IEC 60747-1:2006.
Dispositifs à semiconducteurs - Dispositifs descrets - Partie 8: Transistors à effet de champ
La CEI 60747-8:2010 donne les normes pour les catégories suivantes de transistors à effets de champ:
- type A: type à jonction de grille;
- type B: type à grille isolée à déplétion (appauvrissement) (normalement à l'état passant);
- type C: type à grille isolée à enrichissement (normalement à l'état bloqué).
Les principaux changements par rapport à l'édition précédente sont énumérés ci-dessous.
a) L'Article 3 "Classification" a été déplacé et ajouté à l'Article 1.
b) L'Article 4 "Terminologie et symboles littéraux" a été divisé en Article 3 "Termes et définitions" et Article 4 "Symboles littéraux", ce dernier a été amendé avec des additions et des suppressions.
c) Les Articles 5, 6 et 7 ont été amendés avec les nécessaires additions et suppressions.
Cette publication doit être lue conjointement avec la CEI 60747-1:2006.
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IEC 60747-8 ®
Edition 3.1 2021-06
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STANDARD
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Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
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IEC 60747-8 ®
Edition 3.1 2021-06
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.30 ISBN 978-2-8322-9959-3
IEC 60747-8 ®
Edition 3.1 2021-06
CONSOLIDATED VERSION
REDLINE VERSION
colour
inside
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
– 2 – IEC 60747-8:2010+AMD1:2021 CSV
IEC 2021
CONTENTS
FOREWORD . 6
1 Scope . 8
2 Normative references . 8
3 Terms and definitions . 9
3.1 Types of field-effect transistors . 9
3.2 General terms . 10
3.2.1 Physical regions (of a field-effect transistor) . 10
3.2.2 Functional regions . 11
3.3 Terms related to ratings and characteristics . 12
3.4 Conventional used terms . 17
4 Letter symbols . 17
4.1 General . 17
4.2 Additional general subscripts . 17
4.3 List of letter symbols . 17
4.3.1 Voltage . 17
4.3.2 Currents . 18
4.3.3 Power dissipation . 19
4.3.4 Small-signal parameters . 19
4.3.5 Other parameters . 20
4.3.6 Matched-pair field-effect transistors . 21
4.3.7 Inverse diodes integrated in MOSFETs for N-channel . 21
5 Essential ratings and characteristics . 22
5.1 General . 22
5.1.1 Device categories . 22
5.1.2 Multiple-gate devices . 22
5.1.3 Handling precautions . 22
5.2 Ratings (limiting values) . 22
5.2.1 Temperatures . 22
5.2.2 Power dissipation (P ) . 22
tot
5.2.3 Safe operating area (SOA) for MOSFET only . 22
5.2.4 Voltages and currents . 23
5.3 Characteristics . 24
5.3.1 Characteristics for low-frequency amplifier . 24
5.3.2 Characteristics for high-frequency amplifier . 25
5.3.3 Characteristics for high and low power switching and chopper . 27
5.3.4 Characteristics for low-level amplifier . 30
5.3.5 Characteristics for voltage-controlled resistor . 32
5.3.6 Specific characteristics of matched-pair field-effect transistors for
low-frequency differential . 33
6 Measuring methods . 34
6.1 General . 34
6.2 Verification of ratings (limiting values) . 34
6.2.1 Voltages and currents . 34
6.2.2 Safe operating area . 40
6.2.3 Avalanche energy . 45
IEC 2021
6.3 Methods of measurement . 47
6.3.1 Breakdown voltage, drain to source (V ) . 47
(BR)DS*
6.3.2 Gate-source off-state voltage (V ) (type A and B), gate source
GS(off)
threshold voltage (V ) (type C) . 48
GS(th)
6.3.3 Drain leakage current (d.c.) (I )(type C), Drain cut-off current (d.c.)
DS*
(I ) (type A and B) . 49
DSX
6.3.4 Gate cut-off current (I )(type A), Gate-leakage current (I )(type
GS* GS*
B and C) . 49
6.3.5 (Static) drain-source on-state resistance (r ) or drain-source
DS(on)
on-state voltage (V ) . 50
DS(on)
6.3.6 Switching times (t , t , t , and t ) . 52
d(on) r d(off) f
6.3.7 Turn-on power dissipation (P ), turn-on energy (per pulse) (E ) . 53
on on
6.3.8 Turn-off power dissipation (P ), turn-off energy (per pulse) (E ). 54
off off
6.3.9 Gate charges (Q , Q , Q , Q ) . 54
G GD GS(th) GS(pl)
6.3.10 Common source short-circuit input capacitance (C ) . 55
iss
6.3.11 Common source short-circuit output capacitance (C ) . 56
oss
6.3.12 Common source short-circuit reverse transfer capacitance (C ) . 57
rss
6.3.13 Internal gate resistance (r ) . 58
g
6.3.14 MOSFET forward recovery time (t ) and MOSFET forward recovered
fr
charge (Q ) . 59
f
6.3.15 Drain-source reverse voltage (V V ) . 64
DSR SD
6.3.16 Small-signal short-circuit output conductance (type A, B and C) (g )
oss
.................................................................................................................. 64
6.3.17 Small-signal short-circuit forward transconductance (types A, B and
C) . 67
6.3.18 Noise (types A, B and C) (F, Vn) . 69
6.3.19 On-state drain-source resistance (under small-signal conditions)
(r ) . 70
ds(on)
6.3.20 Channel-case transient thermal impedance (Z ) and thermal
th(j-c)
resistance (R ) of a field-effect transistor . 71
th(j-c)
7 Acceptance and reliability . 73
7.1 General requirements . 73
7.2 Acceptance-defining characteristics . 73
7.3 Endurance and reliability tests . 74
7.3.1 High-temperature blocking (HTRB) . 74
7.3.2 High-temperature gate bias . 74
7.3.3 Intermittent operating life (load cycles) . 74
7.4 Type tests and routine tests . 75
7.4.1 Type tests . 75
7.4.2 Routine tests . 75
Bibliography . 77
Figure 1 – Basic waveforms to specify the gate charges . 14
Figure 2 – Integral times for the turn-on energy E and turn-off energy E . 16
on off
Figure 3 – Switching times . 21
Figure 4 – Circuit diagram for testing of drain-source voltage. 35
Figure 5 – Circuit diagram for testing of gate-source voltage. 35
Figure 6 – Circuit diagram for testing of gate-drain voltage . 36
Figure 7 – Basic circuit for the testing of drain current . 37
– 4 – IEC 60747-8:2010+AMD1:2021 CSV
IEC 2021
Figure 8 – Circuit diagram for testing of peak drain current . 38
Figure 9 – Basic circuit for the testing of reverse drain current of MOSFETs . 38
Figure 10 – Basic circuit for the testing of peak reverse drain current of MOSFETs. 39
Figure 11 – Circuit diagram for verifying FBSOA . 40
Figure 12 – Circuit diagram for verifying RBSOA . 41
Figure 13 – Test waveforms for verifying RBSOA . 42
Figure 14 – Circuit for testing safe operating pulse duration at load short circuit . 43
Figure 15 – Waveforms of gate-so
...
IEC 60747-8 ®
Edition 3.0 2010-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
Dispositifs à semiconducteurs – Dispositifs descrets –
Partie 8: Transistors à effet de champ
All rights reserved. Unless otherwise specified, no part of this publication may be reproduced or utilized in any form or by
any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or
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International Standards for all electrical, electronic and related technologies.
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IEC 60747-8 ®
Edition 3.0 2010-12
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Discrete devices –
Part 8: Field-effect transistors
Dispositifs à semiconducteurs – Dispositifs descrets –
Partie 8: Transistors à effet de champ
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
XC
CODE PRIX
ICS 31.080.30 ISBN 978-2-88912-279-0
– 2 – 60747-8 Ó IEC:2010
CONTENTS
FOREW ORD . 6
1 Sc o pe . 8
2 Normative references . 8
3 Terms and definitions . 9
3.1 Types of field-effect transistors . 9
3.2 General terms . 10
3.2.1 Physical regions (of a field-effect transistor). 10
3.2.2 Functional regions . 11
3.3 Terms related to ratings and characteristics . 12
3.4 Conventional used terms . 17
4 Letter symbols . 17
4.1 General . 17
4.2 Additional general subscripts . 17
4.3 List of letter symbols . 17
4.3.1 Voltage . 17
4.3.2 Currents . 18
4.3.3 Power dissipation . 18
4.3.4 Small-signal parameters . 18
4.3.5 Other parameters . 20
4.3.6 Matched-pair field-effect transistors . 21
4.3.7 Inverse diodes integrated in MOSFETs . 21
5 Essential ratings and characteristics . 22
5.1 General . 22
5.1.1 Device categories. 22
5.1.2 Multiple-gate devices . 22
5.1.3 Handling precautions . 22
5.2 Ratings (limiting values). 22
5.2.1 Temperatures . 22
5.2.2 Power dissipation (P ). 22
tot
5.2.3 Safe operating area (SOA) for MOSFET only . 22
5.2.4 Voltages and currents . 23
5.3 Characteristics . 23
5.3.1 Characteristics for low-frequency amplifier . 23
5.3.2 Characteristics for high-frequency amplifier . 25
5.3.3 Characteristics for high and low power switching and chopper . 27
5.3.4 Characteristics for low-level amplifier . 30
5.3.5 Characteristics for voltage-controlled resistor . 32
5.3.6 Specific characteristics of matched-pair field-effect transistors for
low-frequency differential . 33
6 Measuring methods . 34
6.1 General . 34
6.2 Verification of ratings (limiting values) . 34
6.2.1 Voltages and currents . 34
6.2.2 Safe operating area . 40
6.2.3 Avalanche energy . 44
6.3 Methods of measurement . 46
60747-8 Ó IEC:2010 – 3 –
6.3.1 Breakdown voltage, drain to source (V ) . 46
(BR)DS*
6.3.2 Gate-source off-state voltage (V ) (type A and B), gate source
GS(off)
threshold voltage (V ) (type C) . 47
GS(th)
6.3.3 Drain leakage current (d.c.) (I )(type C), Drain cut-off current (d.c.)
DS*
(I ) (type A and B) . 48
DSX
6.3.4 Gate cut-off current (I )(type A), Gate-leakage current (I )(type
GS* GS*
B and C) . 48
6.3.5 (Static) drain-source on-state resistance (r ) or drain-source on-
DS(on)
state voltage (V ) . 49
DS(on)
6.3.6 Switching times (t , t , t , and t ) . 51
d(on) r d(off) f
6.3.7 Turn-on power dissipation (P ), turn-on energy (per pulse) (E ) . 52
on on
6.3.8 Turn-off power dissipation (P ), turn-off energy (per pulse) (E ) . 53
off off
6.3.9 Gate charges (Q , Q , Q , Q ) . 53
G GD GS(th) GS(pl)
6.3.10 Common source short-circuit input capacitance (C ) . 54
iss
6.3.11 Common source short-circuit output capacitance (C ) . 55
oss
6.3.12 Common source short-circuit reverse transfer capacitance (C ) . 56
rss
6.3.13 Internal gate resistance (r ) . 57
g
6.3.14 MOSFET forward recovery time (t ) and MOSFET forward recovered
fr
charge (Q ) . 58
f
6.3.15 Drain-source reverse voltage (V ) . 62
DSR
6.3.16 Small-signal short-circuit output conductance (type A, B and C) (g ) . 62
oss
6.3.17 Small-signal short-circuit forward transconductance (types A, B and
C) . 65
6.3.18 Noise (types A, B and C) (F, Vn) . 67
6.3.19 On-state drain-source resistance (under small-signal conditions)
(r ) . 68
ds(on)
6.3.20 Channel-case transient thermal impedance (Z ) and thermal
th(j-c)
resistance (R ) of a field-effect transistor . 69
th(j-c)
7 Acceptance and reliability . 71
7.1 General requirements . 71
7.2 Acceptance-defining characteristics . 71
7.3 Endurance and reliability tests . 72
7.3.1 High-temperature blocking (HTRB). 72
7.3.2 High-temperature gate bias . 72
7.3.3 Intermittent operating life (load cycles) . 72
7.4 Type tests and routine tests . 73
7.4.1 Type tests . 73
7.4.2 Routine tests . 73
Bibliography . 75
Figure 1 – Basic waveforms to specify the gate charges . 14
Figure 2 – Integral times for the turn-on energy E and turn-off energy E . 16
on off
Figure 3 – Switching times . 21
Figure 4 – Circuit diagram for testing of drain-source voltage .
...
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