IEC 60747-7-5:2005

INTERNATIONAL IEC
STANDARD 60747-7-5
First edition
2005-08
Semiconductor devices –
Discrete devices –
Part 7-5:
Bipolar transistors for power
switching applications
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INTERNATIONAL IEC
STANDARD 60747-7-5
First edition
2005-08
Semiconductor devices –
Discrete devices –
Part 7-5:
Bipolar transistors for power
switching applications
 IEC 2005  Copyright - all rights reserved
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International Electrotechnical Commission
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For price, see current catalogue

– 2 – 60747-7-5  IEC:2005(E)
CONTENTS
FOREWORD.3
1 Scope.5
2 Normative references .5
3 Terms and definitions .5
4 Letter symbols − Energies .6
5 Essential ratings and characteristics.6
5.1 Ratings (limiting values) .6
5.2 Characteristics .7
6 Measuring methods .9
6.1 Verification of ratings (limiting values) .9
6.2 Methods of measurement .19
7 Acceptance and reliability.22
7.1 Endurance and reliability tests, and test methods .22
7.2 Type tests and routine tests .25

Figure 1 –Test circuit for collector current.10
Figure 2 – Test circuit for peak collector current .11
Figure 3 – Test circuit for base current .12
Figure 4 – Test circuit for peak base current .12
Figure 5 – Circuit for testing the collector-base voltage V , V , V .13
CBS CBR CBX
Figure 6 – Circuit for testing the collector-emitter voltage V , V , V .14
CES CER CEX
Figure 7 – Circuit for testing the emitter-base voltages V .15
EB
Figure 8 – Test circuit of reverse bias safe operating area (RBSOA).16
Figure 9a – Waveforms of base current I and collector current I during turn-off .16
B C
Figure 9b – RBSOA curves during turn-off .17
Figure 10 – Circuit for testing safe operating pulse duration at load short circuit.
(SCSOA).18
Figure 11 – Waveforms of base current I , collector current I and voltage V
B C CE
during load short circuit condition SCSOA.18
Figure 12 – Circuit diagram for measuring turn-on intervals and energy.19
Figure 13 – Waveforms during turn-on intervals .20
Figure 14 – Waveforms during turn-off intervals.21
Figure 15a – Circuit for high temperature blocking(Method 1) .23
Figure 15b – Circuit for high temperature blocking(Method 2) .23
Figure 15 −Test circuit for high temperature blocking .23
Figure 16 – Circuit for Intermittent operating life .24
Figure 17 – Expected number of cycles versus temperature rise ΔT .25
vj
Table 1 – Failure defining characteristics and failure criteria.9
Table 2 – Failure-defining characteristics for endurance and reliability tests .22
Table 3 – Minimum items of type and routine tests for transistors when applicable .26

60747-7-5  IEC:2005(E) – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –

Part 7-5: Bipolar transistors for power switching applications

FOREWORD
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International Standard IEC 60747-7-5 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/279/FDIS 47E/283/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – 60747-7-5  IEC:2005(E)
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.

60747-7-5  IEC:2005(E) – 5 –
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –

Part 7-5: Bipolar transistors for power switching applications

1 Scope
This part of IEC 60747 gives requirements for bipolar switching transistors used for power
switching application above 1 A.
NOTE Requirements concerning bipolar transistors in general can be found in IEC 60747-7.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60747-7, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-1:1983, Semiconductor devices – Discrete devices and integrated circuits – Part 1:
General
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
switching times
t , t , t and t
d(on) r s f
as described in IEC 60747-1, but here the input waveform is the base current and the output
waveform is the collector current
3.2
collector-emitter sustaining voltage
V
CE (SUS)
the collector-emitter breakdown voltage at higher values of collector current where the
breakdown voltage is relatively constant over decreasing collector current for a specified
termination between base and emitter terminals
3.3
turn-on energy (per pulse)
E
on
energy dissipated in transistor during turn-on
3.4
turn-off energy (per pulse)
E
off
energy dissipated in transistor during turn-off

– 6 – 60747-7-5  IEC:2005(E)
4 Letter symbols − Energies
See IEC 60747-7.
Name and designation Letter symbol Remarks
Turn-on energy E
on
Energy is always per pulse
Turn-off energy E
off
5 Essential ratings and characteristics
5.1 Ratings (limiting values)
Ratings shall be valid for the whole range of operating conditions as stated for the particular
device, with reference to a curve where appropriate.
5.1.1 Temperatures
5.1.1.1 Minimum and maximum of operating temperatures, ambient or case or virtual
junction (T or T Tvj)
a c or
5.1.1.2 Minimum and maximum of storage temperatures (T )
stg
5.1.2 Currents
The ratings must cover the operation of the device over the range of operating temperatures.
Where such ratings are temperature dependent, this dependence should be indicated.
5.1.2.1 Maximum continuous collector current (I )
C
5.1.2.2 Where appropriate, maximum peak repetitive collector current, under
specified conditions (I ).
CRM
5.1.2.3 Maximum continuous base current (I )
B
5.1.2.4 Where appropriate, maximum peak repetitive base current, under specified
conditions (I ).
BRM
5.1.2.5 Where appropriate, maximum emitter current, continuous and/or peak
repetitive, under specified conditions (I , I ).
E ERM
5.1.3 Voltages
5.1.3.1 Maximum collector-base voltage with zero emitter current (V )
CBO
5.1.3.2 Maximum collector-emitter voltage, either with zero base current or with a
specified emitter-base reverse voltage (V or V ).
CEO CEX
5.1.3.3 Maximum emitter-base voltage with zero collector current (V ).
EBO
5.1.3.4 Collector-emitter sustaining voltage (V ).
CEXsus
Maximum rated value at specified collector current and specified base-emitter (reverse)
voltage
60747-7-5  IEC:2005(E) – 7 –
5.1.4 Power dissipation
5.1.4.1 Maximum total power dissipation (without additional cooling for ambient-
rated devices) up to ambient or case temperature of 25 °C (P ).
tot
5.1.4.2 Derating factor above 25 °C or, for case-rated devices, derating curve
5.1.5 Safe operating areas
5.1.5.1 Forward biased safe operating area (FBSOA)
Diagram showing the area of collector currents (I ) and collector-emitter voltages (V ) which
C CE
the transistor will sustain simultaneously without being damaged by thermal overload or by
the first or second breakdown, for d.c. and pulse operation.
Conditions to be specified:
– case temperature (T );
c
– pulse time (t );
P
– duty cycle (δ).
5.1.5.2 Reverse biased safe operating area (RBSOA)
Diagram showing the area of collector currents (I ) and collector-emitter voltages (V ) which
C CE
the transistor will sustain simultaneously for a short period of time during turn-off without
being damaged
Conditions to be specified:
– case temperature (T );
c
– reverse base current (I );
B2
– conditions in the drive circuit.
5.1.5.3 Short-circuit safe operating area (SCSOA)
The SCSOA is given by a pair of values of short-circuit duration (t ) and collector-emitter
p(sc)
voltage (V ) that may not be exceeded under the load short circuit conditions. The device
CE
may be turned on and turned off again for shorting a voltage source without failure.
5.2 Characteristics
5.2.1 Cut-off currents
NOTE One or more of these currents should be stated.
5.2.1.1 Collector-base current (I )
CBO
– Maximum value at 25 °C, preferably at the maximum rated value of the collector-base
voltage and with the emitter open-circuited.
– Maximum value at a high operating temperature, at a voltage preferably between 65 %
and 85 % of the maximum rated collector-base voltage, and with the emitter open-circuited.
5.2.1.2 Collector-emitter current (I )
CEX
– Maximum value at 25 °C, preferably at the maximum rated value of collector-emitter
voltage and under specified base-emitter bias conditions.
– Maximum value at a high operating temperature, at a voltage preferably between 65 %
and 85 % of the maximum rated collector-emitter voltage and under specified base-emitter
bias conditions.
– 8 – 60747-7-5  IEC:2005(E)
5.2.1.3 Collector-emitter current (I )
CES
– Maximum value at 25 °C, preferably at the maximum rated value of the collector-emitter
voltage and with the base short-circuited to the emitter.
– Maximum value at a high operating temperature, at a voltage preferably between 65 %
and 85 % of the maximum rated collector-emitter voltage and with the base short-circuited
to the emitter.
5.2.1.4 Collector-emitter current (I )
CER
– Maximum value at 25 °C, preferably at the maximum rated collector-emitter voltage and
with a specified base-emitter resistance.
– Maximum value at a high operating temperature, at a voltage preferably between 65 %
and 85 % of the maximum rated collector-emitter voltage and with a specified base-emitter
resistance.
5.2.1.5 Emitter-base current (I )
EBO
– Maximum value at 25 °C at a specified high value of the emitter-base voltage and with the
collector open-circuited.
– Maximum value at a high operating temperature and at a specified emitter-base voltage,
and with the collector open-circuited.
5.2.2 Static value of common-emitter forward current transfer ratio (h )
FE
Minimum value at 25 °C, at specified collector current and collector-emitter voltage.
5.2.3 Collector-emitter saturation voltage (V )
CEsat
Maximum value at 25 °C, for at least one specified collector current and specified base
current
5.2.4 Base-emitter saturation voltage (V )
BEsat
Maximum value at 25 °C, at specified collector and base currents.
5.2.5 Turn-on energy (E )
on
Maximum value per pulse with inductive load under specified conditions of T or T or T ,
a c vj
high V , high I and I .
CE C B
5.2.6 Turn-off energy (E )
off
Maximum value per pulse with inductive load under specified conditions of T or T or T ,high
a c vj
V , high I and I ．
CE C B
5.2.7 Switching times
5.2.7.1 Turn-on delay time (t )
d(on)
Maximum value for resistive load under specified conditions.
5.2.7.2 Rise time (t )
r
Maximum value, at nominal values of collector current (I ) and base forward current (I ).
C B1
60747-7-5  IEC:2005(E) – 9 –
5.2.7.3 Turn-on time (t )
on
Maximum value, at nominal values of collector current (I ), base forward current (I ) and
C B1
base-emitter voltage (V ) prior to turn-on pulse.
BE
5.2.7.4 Storage time (t )
s
Maximum value, at nominal values of collector current (I ) and base forward and reverse
C
currents (I and I ).
B1 B2
5.2.7.5 Fall time (t )
f
Maximum value for resistive load under specified conditions.
5.2.7.6 Turn-off time (t )
off
Maximum value, at nominal values of collector current (I ) and base forward and reverse
C
currents (I and I ).
B1 B2
5.2.8 Thermal resistance junction to case (R )
th(j-c)
Maximum value for case-rated transistors.
5.2.9 Thermal resistance junction to ambient (R )
th(j-a)
Maximum value for ambient-rated transistors.
5.2.10 Transient thermal impedance junction to case (Z )
th(j-c)
For case-rated transistors, diagram showing the maximum value against the time which has
elapsed after a step change in power dissipation.
5.2.11 Transient thermal impedance junction to ambient (Z )
th(j-a)
For ambient-rated transistors, diagram showing the maximum value against the time which
has elapsed after a step change in power dissipation.
6 Measuring methods
6.1 Verification of ratings (limiting values)
Table 1 – Failure defining characteristics and failure criteria
Failure-defining
Failure criteria Measurement conditions
Characteristics
I I > USL
...