IEC 60747-7-5:2005

INTERNATIONAL IEC
STANDARD 60747-7-5
First edition
2005-08
Semiconductor devices –
Discrete devices –
Part 7-5:
Bipolar transistors for power
switching applications
Reference number
Publication numbering
As from 1 January 1997 all IEC publications are issued with a designation in the
60000 series. For example, IEC 34-1 is now referred to as IEC 60034-1.
Consolidated editions
The IEC is now publishing consolidated versions of its publications. For example,
edition numbers 1.0, 1.1 and 1.2 refer, respectively, to the base publication, the
base publication incorporating amendment 1 and the base publication incorporating
amendments 1 and 2.
Further information on IEC publications
The technical content of IEC publications is kept under constant review by the IEC,
thus ensuring that the content reflects current technology. Information relating to
this publication, including its validity, is available in the IEC Catalogue of
publications (see below) in addition to new editions, amendments and corrigenda.
Information on the subjects under consideration and work in progress undertaken
by the technical committee which has prepared this publication, as well as the list
of publications issued, is also available from the following:
• IEC Web Site (www.iec.ch)
• Catalogue of IEC publications
The on-line catalogue on the IEC web site (www.iec.ch/searchpub) enables you to
search by a variety of criteria including text searches, technical committees
and date of publication. On-line information is also available on recently issued
publications, withdrawn and replaced publications, as well as corrigenda.
• IEC Just Published
This summary of recently issued publications (www.iec.ch/online_news/ justpub)
is also available by email. Please contact the Customer Service Centre (see
below) for further information.
• Customer Service Centre
If you have any questions regarding this publication or need further assistance,
please contact the Customer Service Centre:

Email: custserv@iec.ch
Tel: +41 22 919 02 11
Fax: +41 22 919 03 00
INTERNATIONAL IEC
STANDARD 60747-7-5
First edition
2005-08
Semiconductor devices –
Discrete devices –
Part 7-5:
Bipolar transistors for power
switching applications
 IEC 2005  Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
International Electrotechnical Commission, 3, rue de Varembé, PO Box 131, CH-1211 Geneva 20, Switzerland
Telephone: +41 22 919 02 11 Telefax: +41 22 919 03 00 E-mail: inmail@iec.ch Web: www.iec.ch
PRICE CODE
Commission Electrotechnique Internationale U
International Electrotechnical Commission
МеждународнаяЭлектротехническаяКомиссия
For price, see current catalogue

– 2 – 60747-7-5  IEC:2005(E)
CONTENTS
FOREWORD.3
1 Scope.5
2 Normative references .5
3 Terms and definitions .5
4 Letter symbols − Energies .6
5 Essential ratings and characteristics.6
5.1 Ratings (limiting values) .6
5.2 Characteristics .7
6 Measuring methods .9
6.1 Verification of ratings (limiting values) .9
6.2 Methods of measurement .19
7 Acceptance and reliability.22
7.1 Endurance and reliability tests, and test methods .22
7.2 Type tests and routine tests .25

Figure 1 –Test circuit for collector current.10
Figure 2 – Test circuit for peak collector current .11
Figure 3 – Test circuit for base current .12
Figure 4 – Test circuit for peak base current .12
Figure 5 – Circuit for testing the collector-base voltage V , V , V .13
CBS CBR CBX
Figure 6 – Circuit for testing the collector-emitter voltage V , V , V .14
CES CER CEX
Figure 7 – Circuit for testing the emitter-base voltages V .15
EB
Figure 8 – Test circuit of reverse bias safe operating area (RBSOA).16
Figure 9a – Waveforms of base current I and collector current I during turn-off .16
B C
Figure 9b – RBSOA curves during turn-off .17
Figure 10 – Circuit for testing safe operating pulse duration at load short circuit.
(SCSOA).18
Figure 11 – Waveforms of base current I , collector current I and voltage V
B C CE
during load short circuit condition SCSOA.18
Figure 12 – Circuit diagram for measuring turn-on intervals and energy.19
Figure 13 – Waveforms during turn-on intervals .20
Figure 14 – Waveforms during turn-off intervals.21
Figure 15a – Circuit for high temperature blocking(Method 1) .23
Figure 15b – Circuit for high temperature blocking(Method 2) .23
Figure 15 −Test circuit for high temperature blocking .23
Figure 16 – Circuit for Intermittent operating life .24
Figure 17 – Expected number of cycles versus temperature rise ΔT .25
vj
Table 1 – Failure defining characteristics and failure criteria.9
Table 2 – Failure-defining characteristics for endurance and reliability tests .22
Table 3 – Minimum items of type and routine tests for transistors when applicable .26

60747-7-5  IEC:2005(E) – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –

Part 7-5: Bipolar transistors for power switching applications

FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
Technical Reports, Publicly Available Specifications (PAS) and Guides (hereafter referred to as “IEC
Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with an IEC Publication.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-7-5 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/279/FDIS 47E/283/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – 60747-7-5  IEC:2005(E)
The committee has decided that the contents of this publication will remain unchanged until
the maintenance result date indicated on the IEC web site under "http://webstore.iec.ch" in
the data related to the specific publication. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.

60747-7-5  IEC:2005(E) – 5 –
SEMICONDUCTOR DEVICES – DISCRETE DEVICES –

Part 7-5: Bipolar transistors for power switching applications

1 Scope
This part of IEC 60747 gives requirements for bipolar switching transistors used for power
switching application above 1 A.
NOTE Requirements concerning bipolar transistors in general can be found in IEC 60747-7.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60747-7, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-1:1983, Semiconductor devices – Discrete devices and integrated circuits – Part 1:
General
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
switching times
t , t , t and t
d(on) r s f
as described in IEC 60747-1, but here the input waveform is the base current and the output
waveform is the collector current
3.2
collector-emitter sustaining voltage
V
CE (SUS)
the collector-emitter breakdown voltage at higher values of collector current where the
breakdown voltage is relatively constant over decreasing collector current for a specified
termination between base and emitter terminals
3.3
turn-on energy (per pulse)
E
on
energy dissipated in transistor during turn-on
3.4
turn-off energy (per pulse)
E
off
energy dissipated in transistor during turn-off

– 6 – 60747-7-5  IEC:2005(E)
4 Letter symbols − Energies
See IEC 60747-7.
Name and designation Letter symbol Remarks
Turn-on energy E
on
Energy is always per pulse
Turn-off energy E
off
5 Essential ratings and characteristics
5.1 Ratings (limiting values)
Ratings shall be valid for the whole range of operating conditions as stated for the particular
device, with reference to a curve where appropriate.
5.1.1 Temperatures
5.1.1.1 Minimum and maximum of operating temperatures, ambient or case or virtual
junction (T or T Tvj)
a c or
5.1.1.2 Minimum and maximum of storage temperatures (T )
stg
5.1.2 Currents
The ratings must cover the operation of the device over the range of operating temperatures.
Where such ratings are temperature dependent, this dependence should be indicated.
5.1.2.1 Maximum continuous collector current (I )
C
5.1.2.2 Where appropriate, maximum peak repetitive collector current, under
specified conditions (I ).
CRM
5.1.2.3 Maximum continuous base current (I )
B
5.1.2.4 Where appropriate, maximum peak repetitive base current, under specified
conditions (I ).
BRM
5.1.2.5 Where appropriate, maximum emitter current, continuous and/or peak
repetiti
...