IEC 60749-23:2004

IEC 60749-23 ®
Edition 1.1 2011-03
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 23: High temperature operating life

Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –
Partie 23: Durée de vie en fonctionnement à haute température

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IEC 60749-23 ®
Edition 1.1 2011-03
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices – Mechanical and climatic test methods –

Part 23: High temperature operating life

Dispositifs à semiconducteurs – Méthodes d'essais mécaniques et climatiques –

Partie 23: Durée de vie en fonctionnement à haute température

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8891-2415-2

– 2 – 60749-23  IEC:2004+A1:2011
CONTENTS
FOREWORD . 3

1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 6
4.1 Circuitry . 6
4.1.1 Device schematic . 6
4.1.2 Power . 6
4.2 Device mounting. 6
4.3 Power supplies and signal sources . 6
4.4 Environmental chamber . 6
5 Procedure . 6
5.1 Stress duration . 6
5.2 Stress conditions . 6
5.2.1 Ambient temperature . 7
5.2.2 Operating voltage . 7
5.2.3 Biasing configurations . 7
6 Cool-down . 8
7 Measurements . 8
8 Failure criteria . 9
9 Summary . 9

Table 1 – Additional stress requirements for parts not tested within 96 h . 9

60749-23  IEC:2004+A1:2011 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 23: High temperature operating life
FOREWORD
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This consolidated version of the official IEC Standard and its amendment has been prepared
for user convenience.
IEC 60749-23 edition 1.1 contains the first edition (2004) [documents 47/1735/FDIS and 47/1745/
RVD] and its amendment 1 (2011) [documents 47/2017/CDV and 47/2074/RVC].
A vertical line in the margin shows where the base publication has been modified by
amendment 1. Additions and deletions are displayed in red, with deletions being struck
through.
– 4 – 60749-23  IEC:2004+A1:2011
International Standard IEC 60749-23 has been prepared by IEC technical committee 47:
Semiconductor devices.
This first edition is based on the IEC/PAS 62189 (2000).
This publication has been drafted in accordance with the ISO/IEC Directives, Part 2.
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until the stability date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date, the
publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The “colour inside” logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct understanding
of its contents. Users should therefore print this publication using a colour printer.

60749-23  IEC:2004+A1:2011 – 5 –
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 23: High temperature operating life

1 Scope
This test is used to determine the effects of bias conditions and temperature on solid state
devices over time. It simulates the device operating condition in an accelerated way, and is
primarily used for device qualification and reliability monitoring. A form of high temperature
bias life using a short duration, popularly known as “burn-in”, may be used to screen for infant
mortality related failures. The detailed use and application of burn-in is outside the scope of
this standard.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60747 (all parts), Semiconductor devices – Discrete devices and integrated circuits
IEC 60749-34:, Semiconductor devices – Mechanical and climatic test methods – Part 34:
Power cycling
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
maximum operating voltage
maximum supply voltage at which a device is specified to operate in compliance with the
applicable device specification or data sheet
3.2
absolute maximum rated voltage
maximum voltage that may be applied to a device, beyond which damage (latent or otherwise)
may occur
NOTE It is frequently specified by device manufacturers for a specific device and/or technology.
3.3
absolute maximum rated junction temperature
maximum junction temperature of an operating device beyond which damage (latent or
otherwise) may occur
NOTE 1 It is frequently specified by device manufacturers for a specific device and/or technology.
NOTE 2 Manufacturers may also specify maximum case temperatures for specific packages.
———————
To be published.
– 6 – 60749-23  IEC:2004+A1:2011
4 Test apparatus
The performance of this test requires equipment that is capable of providing the particular
stress conditions to which the test samples will be subjected.
4.1 Circuitry
The circuitry through which the samples will be biased must be designed taking into account
several considerations, as outlined below.
4.1.1 Device schematic
The biasing and operating schemes shall consider the limitations of the device and shall not
overstress the devices or contribute to thermal runaway.
4.1.2 Power
The test circuit shall be designed to limit power dissipation such that, if a device failure
occurs, excessive power will not be applied to other devices in the sample.
4.2 Device mounting
Equipment design, if required, shall provide for mounting of devices to minimize adverse
effects while parts are under stress (e.g. improper heat dissipation).
4.3 Power supplies and signal sources
Instruments (such as digital voltmeters, oscilloscopes, etc.) used to set up and monitor power
supplies and signal sources shall be calibrated and have good long-term stability.
4.4 Environmental chamber
The environmental chamber shall be capable of maintaining the specified temperature within
a tolerance of ±5 °C throughout the chamber while parts are loaded and unpowered.
5 Procedure
The sample devices shall be subjected to the specified or selected stress conditions for the
time and temperature required.
5.1 Stress duration
The bias life duration is intended to meet or exceed an equivalent field lifetime under use
conditions. The duration is established based on the acceleration of the stress. The stress
duration is specified by the relevant specification. Interim measurements may be performed
as necessary, subject to the restrictions in Clause 7.
5.2 Stress conditions
The stress condition shall be applied continuously (except during interim measurement
periods). The time spent elevating the chamber to accelerated conditions, reducing chamber
conditions to room ambient and conducting the interim measurements shall not be considered
a portion of the total specified test duration.

60749-23  IEC:2004+A1:2011 – 7 –
5.2.1 Ambient temperature
Unless otherwise specified, the ambient temperature and bias for high temperature stress
shall be adjusted to maintain the temperature within the desired range. Typically, a junction
temperature of 125 °C for 1 000 h is used for this test. Unless otherwise specified, the
ambient temperature for low temperature stress shall be a maximum of –10 °C.
5.2.2 Operating voltage
Unless otherwise specified, the operating voltage should be the maximum operating voltage
specified for the device unless the conditions of 5.2.1 cannot be met. A higher voltage is
permitted in order to obtain lifetime acceleration from voltage as well as temperature; this
voltage shall not exceed the absolute maximum rated voltage for the device and shall be
agreed upon by the device manufacturer.
5.2.3 Biasing configurations
Biasing configurations detailed below may be bias stress (static or pulsed) or operating stress
(dynamic). Depending upon the biasing configuration, supply and input voltages may be
grounded or raised to a maximum potential chosen to ensure a stressing temperature not
higher than the maximum-rated junction temperature. Device outputs may be unloaded or
loaded, to achieve the specified output voltage level. If a device has a thermal shutdown
feature, it shall not be biased in a manner that could cause the device to go into thermal
shutdown.
5.2.3.1 High temperature forward bias (HTFB)
The HTFB test is configured to forward bias major power handling junctions of the device
samples. The devices may be operated in either a static or a pulsed forward bias mode.
Pulsed operation is used to stress the devices at, or near, maximum-rated current levels. The
particular bias conditions should be determined to bias the maximum number of the solid
state junctions in the device. The HTFB test is typically applied on power devices, diodes and
discrete transistor devices (not typically applied to integrated circuits). The HTFB test, when
applied to power devices, is complementary to IEC 60749-34.
5.2.3.2 High temperature operating life (HTOL)/Low temperature operating life (LTOL)
The HTOL/LTOL test is configured to bias the operating nodes of the device samples. The
devices may be operated in a dynamic operating mode. Typically, several input parameters
may be adjusted to control internal power dissipation. These include supply voltages, clock
frequencies, input signals, etc. that may be operated even outside their specified values, but
resulting in predictable and non-destructive behaviour of the devices under stress. The
particular bias conditions should be determined to bias the maximum number of potential
operating nodes in the device. The HTOL test is typically applied on logic and memory
devices. The LTOL test is intended to look for failures caused by hot carriers and is typically
applied on memory devices or devices with submicron device dimensions.
5.2.3.3 High temperature reverse bias (HTRB)
The HTRB test is configured to reverse bias major power handling junctions of the device
samples. The devices are characteristically operated in a static operating mode at, or near,
maximum rated breakdown voltage and/or current levels. The particular bias conditions
should be determined to bias the maximum number of the solid state junctions in the device.
The HTRB test is typically applied on power devices.

– 8 – 60749-23  IEC:2004+A1:2011
5.2.3.4 High temperature gate bias (HTGB)
The HTGB test biases gate or other oxides of the device samples. The devices are normally
operated in a static mode at, or near, maximum rated oxide breakdown voltage levels. The
particular bias conditions should be determined to bias the maximum number of gates in the
device. The HTGB test is typically used for power devices.
6 Cool-down
Devices on high temperature stress shall be cooled to 55 °C or lower before removing the
bias. Cooling under bias is not required for a given technology, if verification data is provided
by the manufacturer. The interruption of bias for up to 1 min, for the purpose of moving the
devices to cool-down positions separate from the chamber within which life testing was
performed, shall not be considered removal of bias. All specified electrical measurements
shall be completed prior to any reheating of the devices, except for interim measurements
subject to the restrictions of Clause 7.
NOTE Bias refers to application of voltage to power pins.
7 Measurements
The measurements, specified in the applicable life test specification, shall be made at the
beginning of the life test, at the end of each interim period and at the conclusion of the life
test. Interim and final measurements may include high temperature testing. However, testing
at elevated temperatures shall only be performed after completion of specified room (and
lower) temperature test measurements. After interim testing, bias shall be applied to the parts
before heat is applied to the chamber, or within 10 min of loading the final parts into a hot
chamber. Electrical testing shall be completed as soon as possible and no later than 96 h
after removal of bias from devices. If the availability of test equipment or other factors makes
meeting this requirement difficult, bias shall be maintained on the devices either by extending
the bias life stress or keeping the devices under bias at room temperature until this 96 h
window can be met. This, and the high temperature testing restrictions of this clause, need
not be met if verification data for a given technology is provided.
NOTE 1 If the devices have been removed from bias and the 96 h window is not met, the stress must be resumed
prior to completion of the measurements. The duration of this stress should be 24 h for any portion of each week
the limit is exceeded (i.e. 24 h if the limit is exceeded by ≤168 h, 48 h if the limit is exceeded by >168 h but ≤336 h,
etc.). After an interim measurement, the stress should be continued from the point of interruption.
If the devices have been removed from bias and the 96 hour window is exceeded, the stress
shall be resumed for the duration specified in Table 1 prior to completion of the
measurements. After an interim measurement, the stress shall be continued from the point of
interruption. This and the high temperature testing restrictions of this clause need not be met
if verification data for a given technology is provided.
NOTE 2 A shorter storage period may be needed where failure mechanisms that recover in less than 96 h are
suspected.
...