SIST EN IEC 60749-17:2019
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2019)
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2019)
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 17: Neutronenbestrahlung (IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 17: Irradiation aux neutrons (IEC 60749-17:2019)
L’essai d’irradiation aux neutrons est réalisé pour déterminer la sensibilité des dispositifs à semiconducteurs à la dégradation par perte d’énergie non ionisante (NIEL, Non-Ionizing
Energy Loss). L’essai décrit dans le présent document s’applique aux circuits intégrés et aux dispositifs discrets à semiconducteurs, et est destiné aux applications des domaines militaire et aérospatial. Il s’agit d’un essai destructif.
Les objectifs de l’essai sont les suivants:
a) détecter et mesurer la dégradation des paramètres critiques des dispositifs à semiconducteurs en fonction de la fluence des neutrons; et
b) déterminer si des paramètres spécifiés des dispositifs à semiconducteurs sont dans les limites spécifiées après exposition à un niveau spécifié de fluence de neutrons (voir Article 6).
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 17. del: Obsevanje z nevtroni (IEC 60749-17:2019)
Preskus obsevanja z nevtroni se izvaja za določanje dovzetnosti polprevodniških elementov za degradacijo zaradi neionizacijske izgube energije (NIEL). Tukaj opisan preskus se uporablja za integrirana vezja in diskretne polprevodniške elemente in je namenjen za vojaško in aeronavtično uporabo. To je porušitveni preskus.
Cilji tega preskusa so naslednji:
a) zaznavanje in merjenje degradacije kritičnih parametrov polprevodniških elementov kot funkcije fluence nevtronov, in
b) ugotavljanje, ali so določeni parametri polprevodniških elementov znotraj določenih omejitev po izpostavitvi določeni ravni fluence nevtronov (glej 6. točko).
General Information
Relations
Overview
SIST EN IEC 60749-17:2019 is a crucial European standard under the CLC organization that specifies mechanical and climatic test methods for semiconductor devices, focusing on neutron irradiation. This standard assesses the degradation susceptibility of semiconductor devices-such as integrated circuits and discrete components-when exposed to neutron fluence, which can cause non-ionizing energy loss (NIEL) related damage. Primarily designed for military and aerospace applications, this neutron irradiation test is destructive and essential to validate device reliability and performance in radiation-prone environments.
Key Topics
- Purpose and Scope: The standard outlines procedures to characterize semiconductor device degradation due to neutron exposure and confirm that device parameters remain within acceptable limits after irradiation.
- Test Apparatus and Radiation Sources:
- Use of standard laboratory instruments like voltmeters and picoammeters for measurements.
- Radiation sources include broad neutron energy spectra reactors (e.g. TRIGA®) or monoenergetic neutron sources such as deuterium-tritium accelerators.
- Dosimetry and Fluence Measurement:
- Application of fast-neutron activation foils (S, Fe, Ni) to quantify neutron fluence accurately.
- Use of CaF2 thermoluminescence dosimeters (TLDs) to measure gamma-ray dose components.
- Conversion methods for foil radioactivity to neutron fluence following international and national standards.
- Test Procedure:
- Pre-exposure electrical characterization of semiconductor devices to obtain baseline parameters.
- Exposure of unbiased devices mounted on fixtures ensuring neutron fluence uniformity within 20%.
- Post-exposure electrical testing to evaluate parameter shifts and anomalies.
- Safety protocols for handling irradiated devices, addressing radioactivity concerns.
- Standard Updates: This 2019 edition updates and aligns the test method with US military standards (MIL-STD 883J Method 1017), adds new bibliography references, and removes previous usage restrictions.
Applications
SIST EN IEC 60749-17:2019 is highly applicable in sectors requiring robust semiconductor performance under neutron radiation stress, including:
- Military Electronics: Ensures integrated circuits and discrete semiconductor components maintain performance and reliability in nuclear or high-radiation environments.
- Aerospace Systems: Validates device durability for satellites, space probes, and avionics exposed to cosmic and secondary neutron radiation.
- Semiconductor Manufacturing and Quality Assurance: Supports manufacturers in qualifying devices against neutron-induced degradation, crucial for high-reliability markets.
- Radiation Testing Laboratories: Provides standardized test frameworks for neutron irradiation characterization to deliver consistent and reproducible results.
Related Standards
- MIL-STD 883J, Method 1017: Specifies military test methods for semiconductor neutron irradiation, offering complementary procedural guidelines.
- IEC 60749 Series: SIST EN IEC 60749-17:2019 is part 17 of this series addressing mechanical and climatic test methods for semiconductors, providing a comprehensive standard suite for device qualification.
- ASTM Radiation Standards: Various ASTM standards relevant to radiation dosimetry and device testing that support neutron fluence measurements and dosimeter use.
By following SIST EN IEC 60749-17:2019, organizations involved in defense and aerospace technology can rigorously assess semiconductor devices’ resilience against neutron irradiation, ensuring mission-critical electronics meet stringent operational requirements. This standard integrates practical neutron dosimetry techniques, exposure protocols, and safety measures, enabling thorough characterization of device performance degradation due to NIEL effects.
Keywords: SIST EN IEC 60749-17:2019, neutron irradiation test, semiconductor devices, non-ionizing energy loss, NIEL degradation, military applications, aerospace electronics, neutron fluence measurement, semiconductor radiation testing, TRIGA reactor, dosimetry, thermoluminescence dosimeters, electronic device qualification.
Frequently Asked Questions
SIST EN IEC 60749-17:2019 is a standard published by the Slovenian Institute for Standardization (SIST). Its full title is "Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron irradiation (IEC 60749-17:2019)". This standard covers: The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test. The objectives of the test are as follows: a) to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and b) to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
SIST EN IEC 60749-17:2019 is classified under the following ICS (International Classification for Standards) categories: 31.080.01 - Semiconductor devices in general. The ICS classification helps identify the subject area and facilitates finding related standards.
SIST EN IEC 60749-17:2019 has the following relationships with other standards: It is inter standard links to SIST EN 60749-17:2004, SIST EN 60749-17:2004. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.
You can purchase SIST EN IEC 60749-17:2019 directly from iTeh Standards. The document is available in PDF format and is delivered instantly after payment. Add the standard to your cart and complete the secure checkout process. iTeh Standards is an authorized distributor of SIST standards.
Standards Content (Sample)
SLOVENSKI STANDARD
01-julij-2019
Nadomešča:
SIST EN 60749-17:2004
Polprevodniški elementi - Metode za mehansko in klimatsko preskušanje - 17. del:
Obsevanje z nevtroni (IEC 60749-17:2019)
Semiconductor devices - Mechanical and climatic test methods - Part 17: Neutron
irradiation (IEC 60749-17:2019)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 17:
Neutronenbestrahlung (IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie
17: Irradiation aux neutrons (IEC 60749-17:2019)
Ta slovenski standard je istoveten z: EN IEC 60749-17:2019
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN IEC 60749-17
NORME EUROPÉENNE
EUROPÄISCHE NORM
May 2019
ICS 31.080.01 Supersedes EN 60749-17:2003
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 17: Neutron irradiation
(IEC 60749-17:2019)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 17: Irradiation aux Prüfverfahren - Teil 17: Neutronenbestrahlung
neutrons (IEC 60749-17:2019)
(IEC 60749-17:2019)
This European Standard was approved by CENELEC on 2019-05-02. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden,
Switzerland, Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2019 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-17:2019 E
European foreword
The text of document 47/2538/FDIS, future edition 2 of IEC 60749-17, prepared by IEC/TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-17:2019.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2020-02-02
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2022-05-02
document have to be withdrawn
This document supersedes EN 60749-17:2003.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Endorsement notice
The text of the International Standard IEC 60749-17:2019 was approved by CENELEC as a European
Standard without any modification.
IEC 60749-17 ®
Edition 2.0 2019-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 17: Neutron irradiation
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 17: Irradiation aux neutrons
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-6702-8
– 2 – IEC 60749-17:2019 © IEC 2019
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
4.1 Test instruments . 5
4.2 Radiation source . 5
4.3 Dosimetry equipment . 6
4.4 Dosimetry measurements . 6
4.4.1 Neutron fluences . 6
4.4.2 Dose measurements . 6
5 Procedure . 6
5.1 Safety requirements . 6
5.2 Test samples . 6
5.3 Pre-exposure . 7
5.3.1 Electrical tests . 7
5.3.2 Exposure set-up . 7
5.4 Exposure . 7
5.5 Post-exposure . 7
5.5.1 Electrical tests . 7
5.5.2 Anomaly investigation . 7
5.6 Reporting . 7
6 Summary . 8
Bibliography . 9
IEC 60749-17:2019 © IEC 2019 – 3 –
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –
Part 17: Neutron irradiation
FOREWORD
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International Standard IEC 60749-17 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2003. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with res
...
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