IEC 60749-17:2019

IEC 60749-17 ®
Edition 2.0 2019-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 17: Neutron irradiation
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –
Partie 17: Irradiation aux neutrons
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IEC 60749-17 ®
Edition 2.0 2019-03
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 17: Neutron irradiation
Dispositifs à semiconducteurs – Méthodes d’essais mécaniques et climatiques –

Partie 17: Irradiation aux neutrons

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-6702-8

– 2 – IEC 60749-17:2019 © IEC 2019
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and definitions . 5
4 Test apparatus . 5
4.1 Test instruments . 5
4.2 Radiation source . 5
4.3 Dosimetry equipment . 6
4.4 Dosimetry measurements . 6
4.4.1 Neutron fluences . 6
4.4.2 Dose measurements . 6
5 Procedure . 6
5.1 Safety requirements . 6
5.2 Test samples . 6
5.3 Pre-exposure . 7
5.3.1 Electrical tests . 7
5.3.2 Exposure set-up . 7
5.4 Exposure . 7
5.5 Post-exposure . 7
5.5.1 Electrical tests . 7
5.5.2 Anomaly investigation . 7
5.6 Reporting . 7
6 Summary . 8
Bibliography . 9

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 17: Neutron irradiation
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
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8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
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9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60749-17 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2003. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the previous
edition:
a) updates to better align the test method with MIL-STD 883J, method 1017, including
removal of restriction of use of the document, and a requirement to limit the total
ionization dose;
b) addition of a Bibliography, including US MIL- and ASTM standards relevant to this test
method.
– 4 – IEC 60749-17:2019 © IEC 2019
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2538/FDIS 47/2553/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.
A list of all parts in the IEC 60749 series, published under the general title Semiconductor
devices – Mechanical and climatic test methods, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 17: Neutron irradiation
1 Scope
The neutron irradiation test is performed to determine the susceptibility of semiconductor
devices to non-ionizing energy loss (NIEL) degradation. The test described herein is
applicable to integrated circuits and discrete semiconductor devices and is intended for
military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
a) to detect and measure the degradation of critical semiconductor device parameters as
a function of neutron fluence, and
b) to determine if specified semiconductor device parameters are within specified limits after
exposure to a specified level of neutron fluence (see Clause 6).
2 Normative references
There are no normative references in this document.
3 Terms and definitions
No terms and definitions are listed in this document.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
4 Test apparatus
4.1 Test instruments
Test instrumentation to be used in the radiation test shall be standard laboratory electronic
test instruments such as power supplies, digital voltmeters, and pico-ammeters, etc., capable
of measuring the electrical parameters required.
4.2 Radiation source
The radiation source used in the test shall be a well characterized neutron source that
produces either a broad neutron energy spectrum (such as a TRIGA® reactor or a fast burst
reactor) or a monoenergetic neutron spectrum such as available from deuterium-tritium or
deuterium-deuterium accelerators) provided that the output can be converted to a 1 MeV
equivalent spectrum.
__________
TRIGA is the trade name of a product supplied by General Atomics. This information is given for the
convenience of users of this document and does not constitute an endorsement by IEC of the product named.
Equivalent products may be used if they can be shown to lead to the same results.

– 6 – IEC 60749-17:2019 © IEC 2019
4.3 Dosimetry equipment
The following dosimetry equipment shall be used (as required):
32 54 58
a) fast-neutron threshold activation foils such as S, Fe, and Ni;
b) CaF2 thermoluminescence dosimeters (TLDs);
c) appropriate activation foil counting and TLD readout equipment.
4.4 Dosimetry measurements
4.4.1 Neutron fluences
The neutron fluence used for device irradiation shall be obtained by measuring the amount of
32 54 58
radioactivity induced in a fast-neutron threshold activation foil such as S, Fe, or Ni,
irradiated simultaneously with the device.
A standard method for converting the measured radioactivity in the specific activation foil
employed into a neutron fluence is given in national and international standards (examples
are given in the Bibliography).
The conversion of the foil radioactivity into a neutron fluence requires a knowledge of the
neutron spectrum incident on the foil. If the spectrum is not known, it shall be determined by
use of a recognised national standard or equivalent (examples are given in the Bibliography).
Once the neutron energy spectrum has been determined and the equivalent monoenergetic
32 54 58
S, Fe, or Ni) should be
fluence calculated, then an appropriate monitor foil (such as
used in subsequent irradiations to determine the neutron fluence. Thus, the neutron fluence is
described in terms of the equivalent monoenergetic neutron fluence per unit monitor
response. Use of a monitor foil to predict the equivalent monoenergetic neutron fluence is
valid only if the energy spectrum remains constant.
4.4.2 Dose measurements
If absorbed dose measurements of the gamma-ray component during the device test
irradiations are required, then such measurements shall be made with CaF2 thermo-
luminescence dosimeters (TLDs), or their equivalent. These TLDs shall be used in
accordance with the recommendations of recognised national standards or their equivalent
(examples are given in the Bibliography).
5 Procedure
5.1 Safety requirements
Neutron irradiated devices may be radioactive. Handling and storage of test specimens or
equipment subjected to radiation environments shall be governed by the procedures
established by the local Radiation Safety Officer or Health Physicist.
5.2 Test samples
A test sample shall be randomly selected and consist of a minimum of 10 devices, unless
otherwise specified. All sample devices shall have met all the requirements of the relevant
specification for that device. Each device shall be serialised to enable pre- and post-test
identification and comparison.

5.3 Pre-exposure
5.3.1 Electrical tests
Pre-exposure electrical tests shall be performed on each device as required. Where delta
parameter limits are specified, the pre-exposure data shall be recorded.
5.3.2 Exposure set-up
Each device shall be mounted unbiased and have its terminal leads either all shorted or all
open. For MOS devices or any microcircuit containing an MOS element, all leads shall be
shorted. An appropriate mounting fixture shall be used. The mounting fixture shall
accommodate the units-under-test as well as any required dosimeters. The configuration of
the mounting fixture will depend on the type of facility used and should be discussed with
facility personnel. Test devices shall be mounted such that the total variation of fluence over
the entire sample does not exceed 20 %.
5.4 Exposure
The test devices and dosimeters shall be exposed to the neutron fluence as specified.
If multiple exposures are required, the post-radiation electrical tests shall be performed
(see 5.5.1) after each exposure. A new set of dosimeters is required for each exposure level.
Since the effects of neutrons are cumulative, each additional exposure will have to be
determined to give the specified total accumulated fluence. All exposures shall be made at
24 °C ± 6 °C and shall be correlated to a 1 MeV equivalent fluence. To avoid confounding
NIEL effects with total ionizing dose (TID) damage effects, units-under-test shall not be
exposed to a neutron fluence that causes the unit-under-test to receive a TID in excess of
10 % of its rated value. If necessary, the use of shielding to reduce the accompanying gamma
TID exposure is acceptable.
5.5 Post-exposure
5.5.1 Electrical tests
Test items shall be removed only after clearance has been obtained from the Health physicist
at the test facility. The temperature of the sample devices shall be maintained at
20 °C ± 10 °C from the time of the exposure until the post-electrical tests are made. The post-
exposure electrical tests as specified shall be made within 24 h after the completion of the
exposure. If the residual radioactivity level is too high for safe handling – this level to be
determined by the local Radiation Safety Officer –, the elapsed time before post-test electrical
measurements may be extended to one week. Alternatively, provisions may be made for
remote testing. All required data shall be recorded for each device after each exposure.
5.5.2 Anomaly investigation
Devices which exhibit previously defined anomalous behaviour (e.g., non-linear degradation
of 0,125) shall be subjected to failure analysis, in accordance with national and international
standards (an example is given in the Bibliography, [10]).
5.6 Reporting
As a minimum, the report shall include the device type number, serial number, manufacturer,
controlling specification, the date code and other identifying numbers given by the manu-
facturer. Each data sheet shall include radiation test date, electrical test conditions, radiation
exposure levels, ambient conditions as well as the test data. Where other than specified
electrical test circuits are employed, the parameter measurement circuits shall accompany the
data. Any anomalous incidents during the test shall be fully explained in footnotes to the data.

– 8 – IEC 60749-17:2019 © IEC 2019
6 Summary
The following details shall be specified in the request for test or, when applicable, the relevant
specification:
a) device types (see 5.6);
b) quantities of each device type to be tested, if other than specified in 5.2;
c) electrical parameters to be measured in pre- and post-exposure tests (see 5.3.1 and 5.5.1);
d) criteria for pass, fail, record actions on tested devices (see 5.3.1, 5.5.1 and 5.6);
e) criteria for anomalous behaviour designation (see 5.5.2);
f) radiation exposure levels (see 5.4);
g) test instrument requirements (see Clause 4);
h) radiation dosimetry requirements, if other than 4.3;
i) ambient temperature, if other than specified herein (see 5.4 and 5.5.1);
j) requirements for data reporting and submission, where applicable (see
...