IEC 62047-29:2017

IEC 62047-29 ®
Edition 1.0 2017-11
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –
Part 29: Electromechanical relaxation test method for freestanding conductive
thin films under room temperature
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IEC 62047-29 ®
Edition 1.0 2017-11
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Micro-electromechanical devices –

Part 29: Electromechanical relaxation test method for freestanding conductive

thin films under room temperature

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.99 ISBN 978-2-8322-5046-4

– 2 – IEC 62047-29:2017 © IEC 2017
CONTENTS
FOREWORD . 3
1 Scope . 5
2 Normative references . 5
3 Terms and symbols . 5
3.1 Terms and definitions . 5
3.2 Symbols and designations . 6
4 Test piece . 7
4.1 General . 7
4.2 Shape of a test piece . 7
4.3 Measurement of dimensions . 7
5 Test principle and test apparatus . 7
5.1 Test principle . 7
5.2 Test environment . 7
5.3 Test machine . 7
5.4 Test procedure . 8
5.5 Data analysis . 8
6 Test report . 9
Annex A (informative) Electromechanical relaxation test example of freestanding Au film . 10
A.1 Testing overview . 10
A.2 Testing results . 11

Figure 1 – Freestanding test piece . 6
Figure 2 – Experimental setup . 8
Figure A.1 – Photograph of test equipment and a schematic for experimental setup . 10
Figure A.2 – Electromechanical relaxation data of freestanding Au film with a thickness
of 1 μm . 12

Table 1 – Symbols and designations of a test piece . 6

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 29: Electromechanical relaxation test method for freestanding
conductive thin films under room temperature

FOREWORD
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International Standard IEC 62047-29 has been prepared by subcommittee 47F:
Micro-electromechanical systems, of IEC technical committee 47: Semiconductor devices.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47F/295/FDIS 47F/298/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This document has been drafted in accordance with the ISO/IEC Directives, Part 2.

– 4 – IEC 62047-29:2017 © IEC 2017
A list of all parts in the IEC 62047 series, published under the general title Semiconductor
devices – Micro-electromechanical devices, can be found on the IEC website.
The committee has decided that the contents of this document will remain unchanged until the
stability date indicated on the IEC website under "http://webstore.iec.ch" in the data related to
the specific document. At this date, the document will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this publication may be issued at a later date.

IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
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SEMICONDUCTOR DEVICES –
MICRO-ELECTROMECHANICAL DEVICES –

Part 29: Electromechanical relaxation test method for freestanding
conductive thin films under room temperature

1 Scope
This part of IEC 62047 specifies a relaxation test method for measuring electromechanical
properties of freestanding conductive thin films for micro-electromechanical systems (MEMS)
under controlled strain and room temperature. Freestanding thin films of conductive materials
are extensively utilized in MEMS, opto-electronics, and flexible/wearable electronics products.
Freestanding thin films in the products experience external and internal stresses which could
be relaxed even under room temperature during a period of operation, and this relaxation
leads to time-dependent variation of electrical performances of the products. This test method
is valid for isotropic, homogeneous, and linearly viscoelastic materials.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their
content constitutes requirements of this document. For dated references, only the edition
cited applies. For undated references, the latest edition of the referenced document (including
any amendments) applies.
IEC 62047-2:2006, Semiconductor devices – Micro-electromechanical devices – Part 2:
Tensile testing method of thin film materials
IEC 62047-3:2006, Semiconductor devices – Micro-electromechanical devices – Part 3: Thin
film standard test piece for tensile testing
IEC 62047-8:2011, Semiconductor devices – Micro-electromechanical devices – Part 8: Strip
bending test method for tensile property measurement of thin films
IEC 62047-21:2014, Semiconductor devices – Micro-electromechanical devices – Part 21:
Test method for Poisson’s ratio of thin film MEMS materials
IEC 62047-22:2014, Semiconductor devices – Micro-electromechanical devices – Part 22:
Electromechanical tensile test method for conductive thin films on flexible substrates
3 Terms and symbols
3.1 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following
addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp

– 6 – IEC 62047-29:2017 © IEC 2017
3.1.1
gauge factor
G
F
ratio of the relative change in electrical resistance R to the change in mechanical strain (Δε)
Note 1 to entry: Gauge factor is defined as G = (ΔR/R)/ Δε, where ΔR is the change in resistance, R is the
F
unstrained resistance, Δε is the change in the mechanical strain. R and ΔR are expressed in ohms and
...