IEC 60749-41:2020

IEC 60749-41 ®
Edition 1.0 2020-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –
Part 41: Standard reliability testing methods of non-volatile memory devices

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques
et climatiques –
Partie 41: Méthodes d’essai normalisées pour la fiabilité des dispositifs
à mémoire non volatile
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IEC 60749-41 ®
Edition 1.0 2020-07
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices – Mechanical and climatic test methods –

Part 41: Standard reliability testing methods of non-volatile memory devices

Dispositifs à semiconducteurs – Méthodes d’essais mécaniques

et climatiques –
Partie 41: Méthodes d’essai normalisées pour la fiabilité des dispositifs

à mémoire non volatile
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.01 ISBN 978-2-8322-8640-1

– 2 – IEC 60749-41:2020 © IEC 2020
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Apparatus . 9
5 Procedure . 9
5.1 Qualification specifications. 9
5.2 Program/erase endurance . 10
5.2.1 Test setup . 10
5.2.2 Data cycling . 11
5.2.3 Electrical test verification . 14
5.3 Data retention . 14
5.3.1 Data programming . 14
5.3.2 Electrical testing and pattern verification (excluding any EEPROM
program/erase testing) . 15
5.3.3 Data retention stress . 15
5.3.4 Electrical testing and pattern verification . 15
5.4 Precautions . 15
5.5 Measurements . 15
5.5.1 Electrical measurements . 15
5.5.2 Required measurements . 15
5.5.3 Measurement conditions . 16
6 Failure criteria and calculation . 16
6.1 Failure definition . 16
6.2 Handling of transient failures . 16
6.3 Separation of failures into data errors and device failures . 16
6.4 Calculation of UBER . 17
6.4.1 UBER definition calculation. 17
6.4.2 Calculation of UBER in the ideal case . 17
6.4.3 Calculation of UBER in other cases . 18
7 Summary . 18
Annex A (informative) Supplementary test condition . 19
Bibliography . 20

Figure 1 – Schematic flow . 10
Figure A.1 – Endurance-retention testing model . 19
Figure A.2 – Test concept of data retention bake as a function of endurance . 19

INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 41: Standard reliability testing methods
of non-volatile memory devices

FOREWORD
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International Standard IEC 60749-41 has been prepared by IEC technical committee 47:
Semiconductor devices. This standard is based on JEDEC Standard 22-A117. It is used with
permission of the copyright holder, JEDEC Solid State Technology Association.
The text of this International Standard is based on the following documents:
FDIS Report on voting
47/2631/FDIS 47/2643/RVD
Full information on the voting for the approval of this International Standard can be found in
the report on voting indicated in the above table.
This publ
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