IEC 60749-18:2019

IEC 60749-18 ®
Edition 2.0 2019-04
REDLINE VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Mechanical and climatic test methods –
Part 18: Ionizing radiation (total dose)

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IEC 60749-18 ®
Edition 2.0 2019-04
REDLINE VERSION
INTERNATIONAL
STANDARD
colour
inside
Semiconductor devices – Mechanical and climatic test methods –

Part 18: Ionizing radiation (total dose)

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.080.01 ISBN 978-2-8322-6832-2

– 2 – IEC 60749-18:2019 RLV © IEC 2019
CONTENTS
FOREWORD . 4
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus . 8
4.1 Choice of apparatus . 8
4.2 Radiation source . 8
4.3 Dosimetry system . 8
4.4 Electrical test instruments . 8
4.5 Test circuit board(s) . 8
4.6 Cabling . 9
4.7 Interconnect or switching system . 9
4.8 Environmental chamber . 9
4.9 Irradiation temperature chamber . 9
5 Procedure . 9
5.1 Test plan . 9
5.2 Sample selection and handling . 9
5.3 Burn-in . 10
5.4 Dosimetry measurements . 10
5.5 Lead/aluminium (Pb/Al) container . 10
5.6 Radiation level(s) . 10
5.7 Radiation dose rate . 10
5.7.1 Radiation dose rate determination . 10
5.7.2 Condition A . 10
5.7.3 Condition B . 11
5.7.4 Condition C . 11
5.7.5 Condition D . 11
5.7.6 Condition E . 11
5.8 Temperature requirements . 11
5.8.1 Room temperature radiation . 11
5.8.2 Elevated temperature irradiation . 12
5.8.3 Cryogenic temperature irradiation . 12
5.9 Electrical performance measurements . 12
5.10 Test conditions . 12
5.10.1 Choice of test conditions. 12
5.10.2 In-flux testing . 12
5.10.3 Remote testing . 13
5.10.4 Bias and loading conditions . 13
5.11 Post-irradiation procedure . 13
5.12 Extended room temperature annealing test . 14
5.12.1 Choice of annealing test . 14
5.12.2 Need to perform an extended room temperature annealing test . 14
5.12.3 Extended room temperature annealing test procedure . 14
5.13 MOS accelerated annealing test . 15
5.13.1 Choice of MOS accelerated annealing test . 15
5.13.2 Need to perform accelerated annealing test . 15

5.13.3 Accelerated annealing test procedure . 16
5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with
intended application dose rates less than 0,5 Gy(Si)/s . 16
5.14.1 Need to perform ELDRS testing . 16
5.14.2 Determination of whether a part exhibits ELDRS. 17
5.14.3 Characterization of ELDRS parts to determine the irradiation conditions
for production or lot acceptance testing . 17
5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or
BiCMOS linear or mixed-signal devices . 18
5.15 Test report . 18
6 Summary . 18
Bibliography . 22

Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital
bipolar devices. 20
Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS)
linear or mixed-signal devices . 21

– 4 – IEC 60749-18:2019 RLV © IEC 2019
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
MECHANICAL AND CLIMATIC TEST METHODS –

Part 18: Ionizing radiation (total dose)

FOREWORD
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International Standard IEC 60749-18 has been prepared by IEC technical committee 47:
Semiconductor devices.
This second edition cancels and replaces the first edition published in 2002. This edition
constitutes a technical revision.
This edition includes the following significant technical changes with respect to the pr
...