SIST EN IEC 60749-34-1:2025
(Main)Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module (IEC 60749-34-1:2025)
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power cycling test for power semiconductor module (IEC 60749-34-1:2025)
IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 34-1: Leistungszyklusprüfung für Leistungshalbleitermodule (IEC 60749-34-1:2025)
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 34-1: Essai de cycles en puissance pour modules de puissance à semiconducteurs (IEC 60749-34-1:2025)
L’IEC 60749-34-1:2025 décrit une méthode d’essai utilisée pour déterminer la capacité des modules de puissance à semiconducteurs à résister aux contraintes thermiques et mécaniques du fait du cyclage de la dissipation de puissance des semiconducteurs internes et des connecteurs internes. Elle est basée sur l’IEC 60749‑34, mais est développée spécifiquement pour les modules de puissance à semiconducteurs, y compris les transistors bipolaires à grille isolée (IGBT), les transistors à effet de champ à structure métal-oxyde-semiconducteur (MOSFET), les diodes et les thyristors.
En cas de demande d’un client pour une utilisation individuelle ou une ligne directrice spécifique à une application (par exemple la ligne directrice AQG 324 de l’ECPE), les détails de la méthode d’essai peuvent être basés sur ces exigences s’ils s’écartent du contenu du présent document.
Cet essai provoque une usure et est considéré comme destructif.
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 34-1. del: Preskus močnostnega polprevodniškega modula s cikliranjem električnega napajanja (IEC 60749-34-1:2025)
General Information
Standards Content (Sample)
SLOVENSKI STANDARD
01-oktober-2025
Polprevodniški elementi - Mehanske in klimatske preskusne metode - 34-1. del:
Preskus močnostnega polprevodniškega modula s cikliranjem električnega
napajanja (IEC 60749-34-1:2025)
Semiconductor devices - Mechanical and climatic test methods - Part 34-1: Power
cycling test for power semiconductor module (IEC 60749-34-1:2025)
Halbleiterbauelemente - Mechanische und klimatische Prüfverfahren - Teil 34-1:
Leistungszyklusprüfung für Leistungshalbleitermodule (IEC 60749-34-1:2025)
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques - Partie 34
-1: Essai de cycles en puissance pour modules de puissance à semiconducteurs (IEC
60749-34-1:2025)
Ta slovenski standard je istoveten z: EN IEC 60749-34-1:2025
ICS:
31.080.01 Polprevodniški elementi Semiconductor devices in
(naprave) na splošno general
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN IEC 60749-34-1
NORME EUROPÉENNE
EUROPÄISCHE NORM August 2025
ICS 31.080.01
English Version
Semiconductor devices - Mechanical and climatic test methods -
Part 34-1: Power cycling test for power semiconductor module
(IEC 60749-34-1:2025)
Dispositifs à semiconducteurs - Méthodes d'essais Halbleiterbauelemente - Mechanische und klimatische
mécaniques et climatiques - Partie 34-1: Essai de cycles en Prüfverfahren - Teil 34-1: Leistungszyklusprüfung für
puissance pour modules de puissance à semiconducteurs Leistungshalbleitermodule
(IEC 60749-34-1:2025) (IEC 60749-34-1:2025)
This European Standard was approved by CENELEC on 2025-07-25. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia, Lithuania, Luxembourg, Malta, the
Netherlands, Norway, Poland, Portugal, Republic of North Macedonia, Romania, Serbia, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Türkiye and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Rue de la Science 23, B-1040 Brussels
© 2025 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN IEC 60749-34-1:2025 E
European foreword
The text of document 47/2902/FDIS, future edition 1 of IEC 60749-34-1, prepared by TC 47
"Semiconductor devices" was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN IEC 60749-34-1:2025.
The following dates are fixed:
• latest date by which the document has to be implemented at national (dop) 2026-08-31
level by publication of an identical national standard or by endorsement
• latest date by which the national standards conflicting with the (dow) 2028-08-31
document have to be withdrawn
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC shall not be held responsible for identifying any or all such patent rights.
Any feedback and questions on this document should be directed to the users’ national committee. A
complete listing of these bodies can be found on the CENELEC website.
Endorsement notice
The text of the International Standard IEC 60749-34-1:2025 was approved by CENELEC as a
European Standard without any modification.
In the official version, for Bibliography, the following notes have to be added for the standard indicated:
IEC 60747 (series) NOTE Approved as EN IEC 60747 (series)
IEC 60747-15:2024 NOTE Approved as EN IEC 60747-15:2024 (not modified)
IEC 60749 (series) NOTE Approved as EN 60749 (series)
IEC 60749-23 NOTE Approved as EN 60749-23
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents are referred to in the text in such a way that some or all of their content
constitutes requirements of this document. For dated references, only the edition cited applies. For
undated references, the latest edition of the referenced document (including any amendments)
applies.
NOTE 1 Where an International Publication has been modified by common modifications, indicated by (mod),
the relevant EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available
here: www.cencenelec.eu.
Publication Year Title EN/HD Year
IEC 60191-4 - Mechanical standardization of semiconductor EN 60191-4 -
devices - Part 4: Coding system and classification
into forms of package outlines for semiconductor
device packages
IEC 60747-2 2016 Semiconductor devices - Part 2: Discrete devices - -
- Rectifier diodes
IEC 60747-6 2016 Semiconductor devices - Part 6: Discrete devices - -
- Thyristors
IEC 60747-8 2010 Semiconductor devices - Discrete devices - Part - -
8: Field-effect transistors
+ A1 2021
IEC 60747-9 2019 Semiconductor devices - Part 9: Discrete devices - -
- Insulated-gate bipolar transistors (IGBTs)
IEC 60749-34 - Semiconductor devices - Mechanical and climatic EN 60749-34 -
test methods - Part 34: Power cycling
IEC 60749-34-1 ®
Edition 1.0 2025-06
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices - Mechanical and climatic test methods -
Part 34-1: Power cycling test for power semiconductor module
Dispositifs à semiconducteurs - Méthodes d’essais mécaniques et climatiques -
Partie 34-1: Essai de cycles en puissance pour modules de puissance à
semiconducteurs
ICS 31.080.01 ISBN 978-2-8327-0496-7
IEC 60749-34-1:2025-06(en-fr)
IEC 60749-34-1:2025 © IEC 2025
CONTENTS
FOREWORD . 3
INTRODUCTION . 5
1 Scope . 6
2 Normative references . 6
3 Terms and definitions . 6
4 Test apparatus and structure of DUT . 8
5 Procedure . 12
5.1 General . 12
5.2 Determination of T , T and R . 15
vj(min) vj(max) th(j-c)
5.2.1 General. 15
5.2.2 Real-time temperature measurement . 15
5.2.3 Temperature calculation method . 17
6 Test conditions . 17
6.1 General . 17
6.2 Power cycling test (short-time test) . 18
6.3 Power cycling test (long-time test) . 18
6.4 Test conditions and objectives . 19
6.4.1 Certification test . 19
6.4.2 Lifetime model validation test . 19
7 Measurements. 20
8 Failure criteria . 20
Annex A (informative) Estimation of the power cycling capability . 22
A.1 Simple Weibull regression method (the "mean of m method") . 22
A.1.1 General. 22
A.1.2 Improve estimation accuracy under small sample size conditions . 22
A.1.3 Lifetime estimation using the "mean of m method" . 22
A.1.4 Estimation of the power cycling capability . 23
A.2 Least square regression method . 24
Bibliography . 28
Figure 1 – Example of the basic structure of a power semiconductor module
(schematic diagram) (case type module for industrial use) . 9
Figure 2 – A basic test circuit for the power cycling test (for IGBT module) . 9
Figure 3 – A basic test circuit for power MOSFET module . 11
Figure 4 – A basic test circuit for diode module. 11
Figure 5 – A basic test circuit for thyristor module . 12
Figure 6 – A basic circuit of 6-in-1 IGBT module . 13
Figure 7 – Temperature change profile and on/off cycle of the power cycling test
(short-time) . 14
Figure 8 – Temperature change profile and on/off cycle of the power cycling test (long-
time) . 15
Figure A.1 – Lifetime estimation by the mean of m method . 23
Figure A.2 – Power cycling capability in the power cycling test (short-time) . 23
Figure A.3 – Power cycling capability in the power cycling test (long-time) . 24
IEC 60749-34-1:2025 © IEC 2025
Figure A.4 – Power cycling tests at a minimum of 2 ΔT conditions . 26
Figure A.5 – Curve fitting by the regression analysis and determination of the
parameter of the lifetime model . 26
Figure A.6 – Normalization of the number of cycles to one ΔT and T by the
norm norm
N = f(ΔT, T)-model . 26
f
Figure A.7 – Fit procedure for the Weibull graph for the normalized cycle numbers . 26
Figure A.8 – Deduction of the lifetime curve for the product that crosses the specified
failure rate percentage x . 27
Table 1 – Test conditions . 18
Table 2 – Failure criteria for long-time and short-time tests . 21
Table A.1 – The sample size N for power cycling tests . 22
IEC 60749-34-1:2025 © IEC 2025
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
Semiconductor devices - Mechanical and climatic test methods -
Part 34-1: Power cycling test for power semiconductor module
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote international
co-operation on all questions concerning standardization in the electrical and electronic fields. To this end and
in addition to other activities, IEC publishes International Standards, Technical Specifications, Technical Reports,
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preparation is entrusted to technical committees; any IEC National Committee interested in the subject dealt with
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with the IEC also participate in this preparation. IEC collaborates closely with the International Organization for
Standardization (ISO) in accordance with conditions determined by agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IE
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