ISO 19383:2026

International
Standard
ISO 19383
First edition
Atomic layer deposition — Chemical
2026-06
characteristics and related process
specifications of atomic layer
deposition precursors
Dépôt de couches atomiques — Caractéristiques chimiques et
spécifications de processus associées des précurseurs pour le
dépôt de couches atomiques
Reference number
© ISO 2026
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Published in Switzerland
ii
Contents Page
Foreword .iv
Introduction .v
1 Scope . 1
2 Normative references . 1
3 Terms and definitions . 1
4 Classification of ALD precursors . 2
4.1 General .2
4.2 Common ALD precursors for metals .2
4.3 Common ALD precursors for non-metals .3
5 Purity tests . 4
5.1 Assay test .4
5.1.1 General .4
5.1.2 Metal-organic precursors . .4
5.1.3 Non-metal precursors .5
5.2 Metal purity (N values) .5
5.3 Anion content .6
Annex A (informative) Precursor purity vs. ALD growth rate . 8
Annex B (informative) Precursor purity vs. ALD film uniformity .11

iii
Foreword
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iv
Introduction
Advances in nanotechnology have led to higher requirements for thin film deposition technology. Atomic
layer deposition (ALD) technology has broad application prospects in the field of photovoltaic, semiconductor,
flexible electronics, micro-electromechanical systems (MEMS), catalysis and optical devices, etc., with its
unique advantages, such as precise and controllable film thickness, excellent uniformity and good step
coverage.
ALD precursors are critical to film quality and performance. The continuous expansion of precursors
provides more options for the preparation of high-quality films with specific needs in terms of composition,
uniformity, step coverage and electrical properties. In the absence of a standard to regulate ALD precursor
grades, the industry has not formed a unified standard for the purity detection and quality control of the
precursors, leading to various criteria of precursor qualities. This document provides an evaluation index and
testing methods of ALD precursors to serve the rising demand of the ALD market. This document provides
standards, methods and regulations to the ALD field internationally, including precursor development and
production, process exploration and application development in both industry and academia.

v
International Standard ISO 19383:2026(en)
Atomic layer deposition — Chemical characteristics and
related process specifications of atomic layer deposition
precursors
1 Scope
This document defines the chemical characteristics and related process specifications of atomic layer
deposition precursors, including assay content, metal purity and anion content specification.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes
requirements of this document. For dated references, only the edition cited applies. For undated references,
the latest edition of the referenced document (including any amendments) applies.
ISO 8181, Atomic layer deposition — Vocabulary
3 Terms and definitions
For the purposes of this document, the terms and definitions given in ISO 8181 and the following apply.
ISO and IEC maintain terminology databases for use in standardization at the following addresses:
— ISO Online browsing platform: available at https:// www .iso .org/ obp
— IEC Electropedia: available at https:// www .electropedia .org/
3.1
precursor
reaction source used in atomic layer deposition process
3.2
assay
quantitative content (by moles) of a substance in a product
3.3
metal purity
percentage of metal content (by weight) after subtracting the sum of all the metal impurities from 100 %
3.4
anion content
percentage of negatively charged ions (by weight)
3.5
film uniformity
variation in film properties, particularly the thickness, across the surface of a flat substrate

4 Classification of ALD precursors
4.1 General
ALD precursors can be classified based on various criteria, including chemical nature, types of film formed,
substrate compatibility, reactivity and application specificity. However, the procedure to test the purity of
the ALD precursor is mainly based on whether it has metal atom(s) or not. Therefore, in this document, ALD
precursors are classified based on their chemical nature.
4.2 Common ALD precursors for metals
The choice of precursor depends on factors such as the desired film properties, chemical reactivity, volatility
and thermal stability. The common class of ALD precursors includes metal halides, hydrides, alkoxides,
beta-diketonates, alkylimides, alkylamides, amidinates, alkyls and cyclopentadienyls. Table 1 shows the
classification of the common ALD precursors for metals.
Table 1 — Classification of the common ALD precursors for metals
Class Suitable metals Examples
HfCl (Hafnium tetrachloride)
Metal halide Hf, Ti, Al, Zr, Ta, Nb, Mo, W TiCl (Titanium tetrachloride)
AlCl (Aluminum trichloride)
Metal hydride Ge and Sn GeH (Germane), SnH (Stannane)
4 4
C H O Ti /TTIP (Titanium tetraisopropoxide)
12 28 4
t
Metal alkoxide Ti, Li, Ta C H LiO/LiO Bu (Lithium tert-butoxide)
4 9
C H O Ta/Ta(OEt) (Tantalum(V) ethoxide)
10 25 5 5
C H F O Pd/Pd(hfac) (Palladium(II) hexafluoro-
10 2 12 4 2
acetylacetonate)
C H F O Cu/Cu(HFAC) (Copper (II) hexafluoro-
10 2 12 4 2
acetylacetonate)
Metal beta-diketonate Pd, Cu, Rh, La
C H O Rh/Rh(acac) (Rhodium(III) 2,4-pentanedi-
15 21 6 3
onate)
C H O La/La(thd) (Tris (2,2,6,6-tetrame-
33 57 6 3
thyl-3,5-heptanedionato)lanthanum)
C H N Nb/TBTDEN [Tris(diethylamino)(tert-bu-
16 39 4
tylimino)niobium]
C H N Ta/TBTEMT [Tris (ethylmethylamino)
13 33 4
Metal alkylimide Nb, Ta, W, Mo
(tert-butylimino)tantalum]
C H N W/BTBMW [Bis(tert-butylimino)bis(di-
12 30 4
methylamino)tungsten]
C H N Zr/TEMAZ
12 32 4
[Tetrakis(ethylmethylamino)Zirconium]
Metal alkylamide Nb, Ta, Ti, Zr, Hf, Mo, W, Sn, Sb, Ge
C H N Ti/TDEAT [Tetrakis(diethylamino)titani-
16 40 4
um]
C H N Sn/TDMASn [Tetrakis(dimethylamido)tin]
8 24 4
TTabablele 1 1 ((ccoonnttiinnueuedd))
Class Suitable metals Examples
C H LaN /La(FAMD) [Tris(N,N'-di-i-propylforma-
21 45 6 3
midinato)lanthanum]
Metal amidinate La, Ce, Co, Ni, Cu, Mn
i
C H CoN /Co( Pr-amd) [Bis(N,N'-diisopropy-
16 34 4 2
lacetamidinato) cobalt]
C H Zn/DEZ [Diethylzinc]
4 10
Metal alkyls Zn, Al, Ga, In, Cd, Pb, Sn C H Al/TMA [Trimethylaluminum]
3 9
C H Sn/SnEt [Tetraethyltin]
8 20 4
i
C H La/La( PrCp) [Tris (isopropylcyclopentadie-
24 33 3
nyl)lanthanum]
C H N Zr/CpZr [Cyclopentadienyl tris (dimethyl-
11 23 3
Metal cyclopentadienyl La, Ce, Y, Zr, Hf, Ni, Co, Fe
amino)cyclopentadienylzirconium]
C H Ni/Ni(MeCp) [Bis(methylcyclopentadienyl)
12 14 2
nickel]
4.3 Common ALD precursors for non-metals
For non-metallic ALD coatings, precursors for non-metal generally refer to silicon, boron, arsenic, selenium,
phosphorus, tellurium, etc. Table 2 summarizes the common ALD precursors for non-metals.
Table 2 — Classification of the typical ALD precursors for non-metals
Non-metals Class Examples
SiH [Silane]
Hydride
Si H [Disilane]
2 6
Silicon
SiH Cl /DCS [Dichlorosilane]
2 2
Halide Si Cl /HCDS [Hexachlorodisilane]
2 6
SiH I /DIS [Diiodosilane]
2 2
C H N Si/BDEAS [Bis(diethylamino)silane]
8 22 2
C H N Si/DIPAS [Diisopropylaminosialne]
6 16 2
— Alkylamide
C H N Si /BDIPADS [1,2-Bis(diisopropyl-
12 32 2 2
amino)disilane]
C H O Si/TEOS [Tetraethyl orthosilicate]
8 20 4
— Alkoxide
C H O Si/TMOS [Tetramethyl orthosili-
4 12 4
cate]
C H AsN /TDMAAs [Tris(dimethylamino)
6 18 3
Alkylamide
arsenic]
Arsenic
Hydride AsH [Arsine]
Hydride B H [Diborane]
2 6
Boron
BCl [Boron trichloride]
Halide
BBr [Boron tribromide]
C H BN /TDMAB [Tris(dimethylamino)
6 18 3
borane]
— Alkylamide
C H BN /TEMAB [Tris(ethylmethylamino)
9 24 3
borane]
— Alkoxide C H BO /B(OMe) [Trimethyl borate]
3 9 3 3
TTabablele 2 2 ((ccoonnttiinnueuedd))
Non-metals Class Examples
Hydride PH [Phosphine]
PCl [Phosphorus trichloride]
Halide
POCl [Phosphorus(V) oxychloride]
C H N P/P(NMe ) [Tris(dimethylamino)
6 18 3 2 3
Phosphorus Alkylamide
phosphine]
C H O P/P(OMe) [Trimethyl phosphite]
3 9 3 3
Alkoxide
C H O P/PO(OEt) [Triethyl phosphate]
6 15 4 3
t
Alkyls C H P/ BuPH [t-butylphosphine]
4 11 2
C H Se/Et Se [Diethyl selenide]
4 10 2
Alkyls
C H Se/Me Se [Dimethyl selenide]
2 6 2
Hydride H Se [Dihydrogen selenide]
Selenium
C H SeSi /(Me Si) Se [Bis(trimethylsilyl)
6 18 2 3 2
selenide]
Alkylsilyls
C H SeSi /(Et Si) Se [Bis(triethylsilyl)
12 30 2 3 2
selenide]
C H Te/Et Te [Diethyl telluride]
4 10 2
Alkyls
C H18Te/(tBu) Te [Di-tert-butyl Telluride]
8 2
Alkoxide C H O Te/Te(OEt) [Tellurium ethoxide]
8 20 4 4
Tellurium
C H TeSi /(Me Si) Te [Bis(trimethylsilyl)
6 18 2 3 2
tellurium]
Alkylsilyls
C H TeSi /(Et Si) Te [Bis(triethylsilyl)
12 30 2 3 2
tellurium]
5 Purity tests
5.1 Assay test
5.1.1 General
The purity of ALD precursors is crucial to film quality and performance. As specified in Annex A, the ALD
growth rate is affected by the precursor purity; higher purity always leads to higher growth rate. Similarly,
the effect of precursor purity on film uniformity is described in Annex B.
Assay indicates the chemical purity of the products, i.e. the percentage of target material in the product.
The assay is usually measured by techniques such as gas chromatography (GC), nuclear magnetic resonance
(NMR), thermogravimetric analysis (TGA) and high-performance liquid chromatography (HPLC).
5.1.2 Metal-organic precursors
For most metal-organic precursors, the assay is determined by proton nuclear magnetic resonance (H-NMR),
supplemented by TGA. In the H-NMR measurement, the sample is excited in the magnetic field into NMR,
producing NMR signals.
...