IEC 60747-14-3:2001

INTERNATIONAL IEC
STANDARD
60747-14-3
First edition
2001-06
Semiconductor devices –
Part 14-3:
Semiconductor sensors –
Pressure sensors
Dispositifs à semiconducteurs –
Partie 14-3:
Capteurs à semiconducteurs –
Capteurs de pression
Reference number
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INTERNATIONAL IEC
STANDARD
60747-14-3
First edition
2001-06
Semiconductor devices –
Part 14-3:
Semiconductor sensors –
Pressure sensors
Dispositifs à semiconducteurs –
Partie 14-3:
Capteurs à semiconducteurs –
Capteurs de pression
 IEC 2001  Copyright - all rights reserved
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For price, see current catalogue

– 2 – 60747-14-3 © IEC:2001(E)

CONTENTS
FOREWORD.4

INTRODUCTION.5

1 Scope.6

2 Normative references .6

3 Terminology and letter symbols .6

3.1 General terms .6
3.1.1 Semiconductor pressure sensors.6
3.1.2 Sensing methods.6
3.2 Definitions .8
3.3 Letter symbols.11
3.3.1 General .11
3.3.2 List of letter symbols.11
4 Essential ratings and characteristics.12
4.1 General .12
4.1.1 Sensor materials – for piezoelectrical sensors .12
4.1.2 Handling precautions.12
4.1.3 Types .12
4.2 Ratings (limiting values) .12
4.2.1 Pressures .12
4.2.2 Temperatures .12
4.2.3 Voltage.12
4.3 Characteristics .12
4.3.1 Full-scale span (V ) .12
FSS
4.3.2 Full-scale output (V ).13
FSO
4.3.3 Sensitivity (S).13
4.3.4 Temperature coefficient of full-scale sensitivity (α ).13
s
4.3.5 Offset voltage (V ).13
os
4.3.6 Temperature coefficient of offset voltage (α ) .13
vos
4.3.7 Pressure hysteresis of output voltage (H ).13
ohp
4.3.8 Temperature hysteresis of output voltage (H ).13
ohT
4.3.9 Response time .13

4.3.10 Warm-up .13
4.3.11 Dimensions.13
4.3.12 Mechanical characteristics.13
5 Measuring methods .14
5.1 General .14
5.1.1 General precautions .14
5.1.2 Measuring conditions.14
5.2 Output voltage measurements .14
5.2.1 Purpose.14
5.2.2 Principles of measurements.14

60747-14-3 © IEC:2001(E) – 3 –

5.3 Sensitivity (S) .15

5.3.1 Purpose.15

5.3.2 Measuring procedure.15

5.3.3 Specified conditions .15

5.4 Temperature coefficient of sensitivity (α ) .16
s
5.4.1 Purpose.16

5.4.2 Specified conditions .16

5.5 Temperature coefficient of full-scale span (αV ) and maximum
FSS
temperature deviation of full-scale span (ΔV ) .16
FSS
5.5.1 Purpose.16
5.5.2 Specified conditions .17
5.6 Temperature coefficient of offset voltage (α ) and (ΔV ) .17
Vos os
5.6.1 Purpose.17
5.6.2 Specified conditions .17
5.7 Pressure hysteresis of output voltage(H ) .17
ohp
5.7.1 Purpose.17
5.7.2 Circuit diagram and circuit description .17
5.7.3 Specified conditions .17
5.8 Temperature hysteresis of output voltage (H ) .18
ohT
5.8.1 Purpose.18
5.8.2 Measuring procedure.18
5.8.3 Specified conditions .18
Figure 1 – Basic circuit for measurement of output voltage .14

– 4 – 60747-14-3 © IEC:2001(E)

INTERNATIONAL ELECTROTECHNICAL COMMISSION

___________
SEMICONDUCTOR DEVICES –
Part 14-3: Semiconductor sensors –

Pressure sensors
FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
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Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
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equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-14-3 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/191/FDIS 47E/195/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
A bilingual version of this standard may be issued at a later date.
The committee has decided that the contents of this publication will remain unchanged until
2006. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
60747-14-3 © IEC:2001(E) – 5 –

INTRODUCTION
This part of IEC 60747 should be read in conjunction with IEC 60747-1. It provides basic

information on semiconductor
– terminology;
– letter symbols;
– essential ratings and characteristics;

– measuring methods;
– acceptance and reliability.
– 6 – 60747-14-3 © IEC:2001(E)

SEMICONDUCTOR DEVICES –
Part 14-3: Semiconductor sensors –

Pressure sensors
1 Scope
This part of IEC 60747-14 specifies requirements for semiconductor pressure sensors

measuring absolute, gauge or differential pressures.
2 Normative references
The following normative documents contain provisions which, through reference in this text,
constitute provisions of this part of IEC 60747-14. For dated references, subsequent
amendments to, or revisions of, any of these publications do not apply. However, parties to
agreements based on this part of IEC 60747-14 are encouraged to investigate the possibility
of applying the most recent editions of the normative documents indicated below. For undated
references, the latest edition of the normative document referred to applies. Members of IEC
and ISO maintain registers of currently valid International Standards.
IEC 60747-1:1983, Semiconductor devices – Discrete devices – Part 1: General
IEC 60747-14-1:2000, Semiconductor devices – Part 14-1: Semiconductor sensors – General
and classification
3 Terminology and letter symbols
3.1 General terms
3.1.1 Semiconductor pressure sensors
A semiconductor pressure sensor converts the difference between two pressures into an
electrical output quantity. One of the two pressures may be a reference pressure (see 3.2.3).
It includes linear and on-off (switch) types of sensors.
A linear sensor produces electrical output quantity changes linearly with the pressure difference.
An on-off sensor switches an electrical output quantity on and off between two stable states
when the increasing or decreasing pressure differences cross given threshold values.

In this standard, the electrical output quantity is described as a voltage: output voltage.
However, the statements made in this standard are also applicable to other output quantities
such as those described in 3.8 of IEC 60747-14-1: changes in impedance, capacitance,
voltage ratio, frequency-modulated output or digital output.
3.1.2 Sensing methods
3.1.2.1 Piezoelectric sensing
The basic principle of piezoelectric devices is that a piezoelectric material induces a charge or
induces a voltage across itself when it is deformed by stress. The output from the sensor
is amplified in a charge amplifier which converts the charge generated by the transducer
sensor into a voltage that is proportional to the charge. The main advantages of piezoelectric
sensing are the wide operating temperature range (up to 300 °C) and high-frequency range
(up to 100 kHz).
60747-14-3 © IEC:2001(E) – 7 –

3.1.2.2 Piezoresistive sensing

The basic principle of a piezoresistor is the change of the resistor value when it is deformed

by stress. The sensing resistors can be either p- or n-type doped regions. The resistance of

piezoresistors is very sensitive to strain, and thus to pressure, when correctly placed on the

diaphragm of a pressure sensor. Four correctly oriented resistors are used to build a strain

gauge in the form of a resistor bridge.

An alternative to the resistor bridge is the transverse voltage strain gauge. It is a single

resistive element on a diaphragm, with voltage taps centrally located on either side of the

resistor. When a current is passed through the resistor, the voltages are equal when the

element is not under strain, but when the element is under strain, a differential voltage output
appears.
3.1.2.3 Capacitive sensing
A small dielectric gap between the diaphragm and a plate makes a capacitance which
changes with the diaphragm movement. Single capacitance or differential capacitance
techniques can be used in open- or closed-loop systems. Capacitance and capacitive
changes can be measured either in a bridge circuit or using switched-capacitor techniques.
Any of the capacitive sensing techniques used in a micromachined structure require an a.c.
voltage across the capacitor being measured. Capacitive sensing has the following
advantages: small size of elements, wide-operating temperature range, ease of trimming,
good linearity, and compatibility to CMOS signal conditioning.
3.1.2.4 Silicon vibrating sensing
The vibrating element of a silicon micromachined structure is maintained in oscillation, either
by piezoelectric or electrical field energy. The application of pressure to the silicon diaphragm
produces strain on the micromachined structure and the vibration frequency is measured to
determine applied pressure.
3.1.2.5 Signal conditioning
Semiconductor pressure sensors are mainly micromachined structures including a sensing
element. Other electrical components or functions can be performed at the same time and in
the same package on the process line. Most pressure sensors offer integrated signal
conditioning.
Signal conditioning transforms a raw sensor output into a calibrated signal. This process may
involve several functions, such as calibration of initial zero pressure offset and pressure
sensitivity, compensation of non-linear temperature errors of offset and sensitivity,
compensation of the non
...