IEC 60747-16-1:2001

INTERNATIONAL IEC
STANDARD 60747-16-1
Edition 1.1
2007-03
Edition 1:2001 consolidated with amendment 1:2007
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
Reference number
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INTERNATIONAL IEC
STANDARD 60747-16-1
Edition 1.1
2007-03
Edition 1:2001 consolidated with amendment 1:2007
Semiconductor devices –
Part 16-1:
Microwave integrated circuits –
Amplifiers
© IEC 2007 ⎯ Copyright - all rights reserved
No part of this publication may be reproduced or utilized in any form or by any means, electronic or
mechanical, including photocopying and microfilm, without permission in writing from the publisher.
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For price, see current catalogue

– 2 – 60747-16-1 © IEC:2001+A1:2007(E)
CONTENTS
FOREWORD.4

1 Scope.6
2 Normative references .6
3 Terminology .6
4 Essential ratings and characteristics.9
4.1 General .9
4.2 Application related description.10
4.3 Specification of the function .10
4.4 Limiting values (absolute maximum rating system) .12
4.5 Operating conditions (within the specified operating temperature range) .14
4.6 Electrical characteristics.14
4.7 Mechanical and environmental ratings, characteristics and data.16
4.8 Additional information.16
5 Measuring methods .17
5.1 General .17
5.2 Linear (power) gain (G ) .17
lin
5.3 Linear (power) gain flatness (ΔG ) .19
lin
5.4 Power gain (G ).20
p
5.5 (Power) gain flatness (ΔG ) .20
p
5.6 (Maximum available) gain reduction (ΔG ) .21
red
5.7 Limiting output power (P ) .22
o(ltg)
5.8 Output power (P ) .23
o
5.9 Output power at 1 dB gain compression (P ) .24
o(1dB)
5.10 Noise figure (F) .25
5.11 Intermodulation distortion (two-tone) (P /P ).27
1 n
5.12 Power at the intercept point (for intermodulation products) (P ) .29
n(IP)
5.13 Magnitude of the input reflection coefficient (input return loss) (|S |) .30
5.14 Magnitude of the output reflection coefficient (output return loss) (|S |) .31
5.15 Magnitude of the reverse transmission coefficient (isolation) (⏐S ⏐).35
5.16 Conversion coefficient of amplitude modulation to phase modulation (α ) .36
(AM-PM)
5.17 Group delay time (t ).38
d(grp)
5.18 Power added efficiency .39
5.19 nth order harmonic distortion ratio (P /P ) .41
1 nth
5.20 Output noise power (P ).42
N
5.21 Spurious intensity under specified load VSWR (P /P ) .44
o sp
5.22 Adjacent channel power ratio (P /P ) .46
o(mod) adj
6 Verifying methods.49
6.1 Load mismatch tolerance (Ψ ) .49
L
6.2 Source mismatch tolerance (Ψ ) .52
S
6.3 Load mismatch ruggedness (Ψ ).55
R
60747-16-1 © IEC:2001+A1:2007(E) – 3 –
Figure 1 – Circuit for the measurements of linear gain .17
Figure 2 – Basic circuit for the measurement of the noise figure .25
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion .27
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss).30
Figure 5 – Circuit for the measurement of output reflection coefficient .33
Figure 6 – Circuit for the measurement of isolation .35
Figure 7 – Basic circuit for the measurement of α .36
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency.39
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio .41
Figure 10 – Circuit diagram for the measurement of the output noise power .43
Figure 11 – Circuit diagram for the measurement of the spurious intensity.45
Figure 12 – Circuit for the measurement of the adjacent channel power ratio.47
Figure 13 – Circuit for the verification of load mismatch tolerance in method 1 .50
Figure 14 – Circuit for the verification of load mismatch tolerance in method 2 .51
Figure 15 – Circuit for the verification of source mismatch tolerance in method 1.53
Figure 16 – Circuit for the verification of source mismatch tolerance in method 2.54
Figure 17 – Circuit for the verification of load mismatch ruggedness .55

– 4 – 60747-16-1 © IEC:2001+A1:2007(E)
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers

FOREWORD
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9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.

International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This consolidated version of IEC 60747-16-1 consists of the first edition (2001) [documents
47E/200/FDIS and 47E/204/RVD] and its amendment 1 (2007) [documents 47E/305/FDIS and
47E/317/RVD].
The technical content is therefore identical to the base edition and its amendment and has
been prepared for user convenience.
It bears the edition number 1.1.
A vertical line in the margin shows where the base publication has been modified by
amendment 1.
60747-16-1 © IEC:2001+A1:2007(E) – 5 –
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until the maintenance result date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date,
the publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
A bilingual version of this standard may be issued at a later date.

– 6 – 60747-16-1 © IEC:2001+A1:2007(E)
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers

1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative references
The following referenced documents are indispensable for the application of this document.
For dated references, only the edition cited applies. For undated references, the latest edition
of the referenced document (including any amendments) applies.
IEC 60617:2001, Graphical symbols for diagrams
IEC 60747-1:2006, Semiconductor devices – Part 1: General
IEC 60747-4:-, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60747-16-2:2001, Semiconductor devices – Part 16-2: Microwave integrated circuits –
Frequency prescalers
IEC 60747-16-4:2004, Semiconductor devices – Part 16-4: Microwave integrated circuits –
Switches
IEC 60748-2:1997, Semiconductor devices – Integrated circuits – Part 2: Digital integrated
circuits
IEC 60748-3:1986, Semiconductor devices – Integrated circuits – Part 3: Analogue integrated
circuits
IEC 60748-4:1997, Semiconductor devices – Integrated circuits – Part 4: Interface integrated
circuits
IEC/TS 61340-5-1:1998, Electrostatics - Part 5-1: Protection of electronic devices from
electrostatic phenomena - General requirements
IEC/TS 61340-5-2:1999, Electrostatics - Part 5-2: Protection of electronic devices from
electrostatic phenomena - User guide
3 Terminology
3.1
linear (power) gain G
lin
power gain in the linear region of the power transfer curve P (dBm) = f(P )
o i
NOTE In this region, ΔP (dBm) = ΔP (dBm).
o i
———————
The second edition of IEC 60747-4, which is cited in this standard, and to which terms introduced in this
amendment refer, is currently in preparation (ADIS).

60747-16-1 © IEC:2001+A1:2007(E) – 7 –
3.2
linear (power) gain flatness ΔG
lin
power gain flatness when the operating point lies in the linear region of the power transfer
curve
3.3
power gain G , G
p
ratio of the output power to the input power
NOTE Usually the power gain is expressed in decibels.
3.4
(power) gain flatness ΔG
p
difference between the maximum and minimum power gain for a specified input power in a
specified frequency range
3.5
(maximum available) gain reduction ΔG
red
difference in decibels between the maximum and minimum power gains that can be provided
by the gain control
3.6 Output power limiting
3.6.1
output power limiting range
range in which, for rising input power, the output power is limiting
NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
3.6.2
limiting output power P
o(ltg)
output power in the range where it is limiting
3.6.3
limiting output power flatness ΔP
o(ltg)
difference between the maximum and minimum output power in the output power limiting
range:
ΔP = P – P
o(ltg) o(ltg,max) o(ltg,min)
3.7
intermodulation distortion P /P
1 n
ratio of the fundamental component of the output power to the nth order component of the
output power, at a specified input power
3.8
power at the intercept point (for intermodulation products) P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
component and the nth order intermodulation components, when the extrapolation is carried
out in a diagram showing the output power of the components (in decibels) as a function of
the input power (in decibels)
3.9
magnitude of the input reflection coefficient
(input return loss)
|S |
see 3.5.2.1 of IEC 60747-7
– 8 – 60747-16-1 © IEC:2001+A1:2007(E)
3.10
magnitude of the output reflection coefficient
(output return loss)
|S |
see 3.5.2.2 of IEC 60747-7
3.11
magnitude of the reverse transmission coefficient
(isolation)
|S |
see 3.5.2.4 of IEC 60747-7
3.12
conversion coefficient of amplitude modulation to phase modulation α
(AM-PM)
quotient of
the phase deviation of the output signal (in degrees) by
the change in input power (in decibels) producing it
3.13
group delay time t
d(grp)
ratio of the change, with angular frequency, of the phase shift through the amplifier
NOTE Usually group delay time is very close in value to input-to-output delay time.
3.14
nth order harmonic distortion ratio P /P
1 nth
ratio of the power of the fundamental frequency measured at the output port of the device to
the power of the nth order harmonic component measured at the output port for a specified
output power
3.15
output noise power P
N
maximum noise power measured at the output port of the device within a specified bandwidth
in a specified frequency range for a specified output power
3.16
spurious intensity under specified load VSWR P /P
o sp
ratio of the power of the fundamental frequency measured at the output port of the device to
the maximum spurious power measured at the output port under specified load VSWR
3.17
output power
P
o
see 3.3 of IEC 60747-16-2
3.18
output power at 1 dB gain compression
P
o(1dB)
see 8.2.13 of IEC 60747-4
3.19
noise figure
F
see 702-08-57 of IEC 60050-702

60747-16-1 © IEC:2001+A1:2007(E) – 9 –
3.20
power added efficiency
η
add
see 8.2.15 of IEC 60747-4
3.21
adjacent channel power ratio
P /P
o(mod) adj
see 3.10 of IEC 60747-16-4
3.22
load mismatch tolerance
Ψ
L
see 7.2.20 of IEC 60747-4
3.23
source mismatch tolerance
Ψ
S
see 7.2.21 of IEC 60747-4
3.24
load mismatch ruggedness
Ψ
R
see 7.2.22 of IEC 60747-4
4 Essential ratings and characteristics
4.1 General
4.1.1 Circuit identification and types
4.1.1.1 Designation and types
The indication of type (device name), the category of the circuit and the technology applied
should be given.
Microwave amplifiers are divided into four categories:
Type A: Low-noise type.
Type B: Auto-gain control type.
Type C: Limiting type.
Type D: Power type.
4.1.1.2 General function description
A general description of the function performed by the integrated circuit microwave amplifiers
and the features for the application should be made.
4.1.1.3 Manufacturing technology
The manufacturing technology, for example, semiconductor monolithic integrated circuit, thin-
film integrated circuit, micro-assembly, should be stated. This statement should include
details of the semiconductor technologies such as MESFET, MISFET, Si bipolar transistor,
HBT, etc.
– 10 – 60747-16-1 © IEC:2001+A1:2007(E)
4.1.1.4 Package identification
The following statements should be made:
a) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
b) principal package material; for example, metal, ceramic, plastic.
4.1.1.5 Main application
The main application should be stated, if necessary. If the device has restrictive applications,
these should be stated here.
4.2 Application related description
Information on the application of the integrated circuit and its relation to the associated
devices should be given.
4.2.1 Conformance to system and/or interface information
It should be stated whether the integrated circuit conforms to an application system and/or
interface standard or recommendation.
The detailed information about application systems, equipment and circuits such as VSAT
systems, DBS receivers, microwave landing systems, etc., should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems should be given, if necessary.
4.2.3 Reference data
The most important properties to permit comparison between derivative types should be given.
4.2.4 Electrical compatibility
It should be stated whether the integrated circuit is electrically compatible with other particular
integrated circuits or families of integrated circuits or whether special interfaces are required.
Details should be given of the type of the input and output circuits, for example, input/output
impedances, d.c. block, open-drain, etc. Interchangeability with other devices, if any, should
be given.
4.2.5 Associated devices
If applicable, the following should be stated here:
– devices necessary for correct operation (list with type number, name, and function);
– peripheral devices with direct interfacing (list with type number, name, and function).
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave
amplifiers should be given. The block diagram should be composed of the following:
1) functional blocks;
2) mutual interconnections among the functional blocks;

60747-16-1 © IEC:2001+A1:2007(E) – 11 –
3) individual functional units within the functional blocks;
4) mutual interconnections among the individual functional blocks;
5) function of each external connection;
6) interdependence between the separate functional blocks.
The block diagram should identify the function of each external connection and, where no
ambiguity can arise, can also show the terminal symbols and/or numbers. If the encapsulation
has metallic parts, any connection to them from external terminals should be indicated. The
connections with any associated external electrical elements should be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. This may be obtained from a catalogue of standards of graphical
symbols or designed according to the rules of IEC 60617.
4.3.2 Identification and function of terminals
All terminals should be identified on the block diagram (supply terminals, input or output
terminals, input/output terminals).
The terminal functions 1)-4) should be indicated in a table as follows:
Terminal Terminal 1) Terminal 2) Function Function of terminal
number symbol designation
3) Input/output 4) Type of
identification input/output circuit

1) Terminal name
A terminal name to indicate the function terminal should be given. Supply terminals,
ground terminals, blank terminals (with abbreviation NC), non-usable terminals (with
abbreviation NU) should be distinguished.
2) Function
A brief indication of the terminal function should be given.
– Each function of multi-role terminals, that is terminals that have multiple functions.
– Each function of the integrated circuit selected by mutual pin connections,
programming and/or application of function selection data to the function selection pin,
such as mode selection pin.
3) Input/output identification
Input, output, input/output, and multiplex input/output terminals should be distinguished.
4) Type of input/output circuits
The type of the input and output circuits, for example, input/output impedances, with or
without d.c. block, etc., should be distinguished.
5) Type of ground
If the baseplate of the package is used as ground, this should be stated.

– 12 – 60747-16-1 © IEC:2001+A1:2007(E)
Example:
Supply voltage
Integrated
Input(s)
NC
circuit
microwave
NU Output(s)
amplifiers
Ground
4.3.3 Functional description
The function performed by the circuit should be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (for example, set-up method, preference, etc.);
– interrupt handling.
4.3.4 Family-related characteristics
In this part, all the family-specific functional descriptions shall be stated (refer to IEC 60748-2,
IEC 60748-3 and IEC 60748-4).
If ratings and characteristics and function characteristics exist for the family, the relevant part
of IEC 60748 should be used (for example, for microprocessors, see IEC 60748-2, Chapter III,
Section 3).
NOTE For each new device family, specific items shall be added in the relevant part of IEC 60748.
4.4 Limiting values (absolute maximum rating system)
The table of these values contains the following.
a) Any interdependence of limiting conditions shall be specified.
b) If externally connected and/or attached elements, for example heatsinks, have an
influence on the values of the ratings, the ratings shall be prescribed for the integrated
circuit with the elements connected and/or attached.
c) If limiting values are exceeded for transient overload, the permissible excess and their
duration shall be specified.
d) Where minimum and maximum values differ during programming of the device, this should
be stated.
e) All voltages are referenced to a specified reference terminal (V , G , etc.).
ss ND
f) In satisfying the following clauses, if maximum and/or minimum values are quoted, the
manufacturer must indicate whether he refers to the absolute magnitude or to the
algebraic value of the quantity.
g) The ratings given must cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-
dependent, this dependence should be indicated.

60747-16-1 © IEC:2001+A1:2007(E) – 13 –
4.4.1 Electrical limiting values
Limiting values should be specified as follows.
Parameters Min. Max.
(1) Power supply voltages + +
(2) Power supply currents (where appropriate) +
(3) Input voltage(s) (where appropriate) + +
(4) Output voltage(s) (where appropriate) + +
(5) Input current(s) (where appropriate) +
(6) Output current(s) (where appropriate) +
(7) Other terminal voltage(s) (where appropriate) + +
(8) Other terminal current(s) (where appropriate) +
(9) Voltage difference between input and output + +
(where appropriate)
(10) Power dissipation +
The detail specification may indicate those values within the table including note 1 and note 2.
Parameters (Note 1, Note 2) Symbols Min. Max. Unit

NOTE 1  Where appropriate, in accordance with the type of circuit considered.
NOTE 2  For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with
respect to a special electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement should be made as
to whether the sequence in which these supplies are applied is significant: if so,
the sequence should be stated;
– when more than one supply is needed, it may be necessary to state the
combinations of ratings for these supply voltages and currents.
4.4.2 Temperatures
1) Operating temperature
2) Storage temperature
3) Channel temperature (type C and type D only)
4) Lead temperature (for soldering).
The detail specification may indicate those values within the table including the note.
Parameters (Note) Symbols Min. Max. Unit

NOTE Where appropriate, in accordance with the type of circuit considered.

– 14 – 60747-16-1 © IEC:2001+A1:2007(E)
4.5 Operating conditions (within the specified operating temperature range)
They are not to be inspected but may be used for quality assessment purpose.
4.5.1 Power supplies positive and/or negative values
4.5.2 Initialization sequences (where appropriate)
If special initialization sequences are necessary, the power supply sequencing and the
initialization procedure should be specified.
4.5.3 Input voltage(s) (where appropriate)
4.5.4 Output current(s) (where appropriate)
4.5.5 Voltage and/or current of other terminal(s)
4.5.6 External elements (where appropriate)
4.5.7 Operating temperature range
4.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified.
Each characteristic of 4.6.1 and 4.6.2 should be stated, either
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
4.6.1 Static characteristics
The parameters should be specified corresponding to the type as follows.
a
Parameters Min. Typ. Max. Types
A B C D
4.6.1.1 Power supply current + + + + + + +
4.6.1.2 Thermal resistance  +  + +
a
Optional
The detail specification may indicate those values within the table.
a
Characteristics Symbols Conditions Min. Typ. Max. Unit

a
Optional
4.6.2 Dynamic or r.f. characteristics
Each dynamic or a.c. electrical characteristic should be stated under specified electrical
worst-case conditions with respect to the recommended range of supply voltages, as stated
in 4.5.1.
60747-16-1 © IEC:2001+A1:2007(E) – 15 –
The parameters should be specified corresponding to the type as follows.
Parameters Min. Max. Types
A B C D
4.6.2.1 Linear gain + + + +
4.6.2.2 Linear gain flatness + + + +
4.6.2.3 Power gain +  + +
4.6.2.4 Power gain flatness + + +
4.6.2.5 Gain reduction +  +
4.6.2.6 Output power +  + +
4.6.2.7 Output power at 1 dB gain compression +  + +
4.6.2.8 Limiting output power + +  +
4.6.2.9 Limiting output power flatness +  +
4.6.2.10 Intermodulation distortion +  + +
4.6.2.11 Power at intercept point +  + +
4.6.2.12 Noise figure + +
4.6.2.13 Magnitude of the input reflection coefficient + + + + +
(input return loss)
b
4.6.2.14 Magnitude of the output reflection coefficient + + + +
(output return loss)
4.6.2.15 Magnitude of the reverse transmission coefficient + + + + +
(isolation)
4.6.2.16 Conversion coefficient of amplitude modulation to +  + +
phase modulation (where appropriate)
4.6.2.17 Group delay time (where appropriate) + + + +
a
4.6.2.18 Time constant for automatic gain control
4.6.2.19 Power added efficiency +   +
(where appropriate)
4.6.2.20 nth order harmonic distortion ratio +   +
(where appropriate) (note 2)
4.6.2.21 Output noise power  +  +
(where appropriate) + +
4.6.2.22 Spurious intensity under specified load VSWR +   +
(where appropriate) (note 2)
Adjacent channel power ratio (where appropriate)
4.6.2.23 +   +
Load mismatch tolerance (where appropriate)
4.6.2.24 +  +
4.6.2.25 Source mismatch tolerance (where appropriate) +  +
4.6.2.26 Load mismatch ruggedness (where appropriate) +  +
NOTE 1  It is necessary for types B and D to select either the parameter set of 4.6.2.1, 4.6.2.2 and 4.6.2.7 or
that of 4.6.2.3, 4.6.2.4 and 4.6.2.6.
NOTE 2  Generally expressed in dBc.
a
Under consideration.
b
Optional. For type D, the devices are sometimes required to specify under large signal operation instead of
small signal operation. Although the definition is the same for both operating conditions, the different
measuring method should be employed for the parameter under large signal operation from that under small
signal operation.
– 16 – 60747-16-1 © IEC:2001+A1:2007(E)
The detail specification may indicate those values within the table.
a
Characteristics Symbols Conditions Min. Typ. Max. Unit

a
Optional
4.7 Mechanical and environmental ratings, characteristics and data
Any specific mechanical and environmental ratings applicable should be stated (see also
Subclause 5.10 and 5.11 of IEC 60747-1:2006).
4.8 Additional information
Where appropriate, the following information should be given.
4.8.1 Equivalent input and output circuit
Detailed information should be given regarding the type of the input and output circuits; for
example, input/output impedances, d.c. block, open-drain, etc.
4.8.2 Internal protection
A statement should be given to indicate whether the integrated circuit contains internal
protection against high static voltages or electrical fields.
4.8.3 Capacitors at terminals
If capacitors for the input/output d.c. block are needed, these capacitances should be stated.
4.8.4 Thermal resistance
4.8.5 Interconnections to other types of circuit
Where appropriate, details of the interconnections to other circuits, for example, detector
circuit for AGC, sense amplifiers, buffer, should be given.
4.8.6 Effects of externally connected component(s)
Curves or data indicating the effect of externally connected component(s) that influence the
characteristics may be given.
4.8.7 Recommendations for any associated device(s)
For example, decoupling of power supply to a high-frequency device should be stated.
4.8.8 Handling precautions
Where appropriate, handling precautions specific to the circuit should be stated (see also
IEC 61340-5-1 and IEC 61340-5-2).
4.8.9 Application data
4.8.10 Other application information
4.8.11 Date of issue of the data sheet

60747-16-1 © IEC:2001+A1:2007(E) – 17 –
5 Measuring methods
5.1 General
5.1.1 Characteristic impedances
The input and output characteristic impedances of the measurement system, shown in the
circuit in this standard, are 50 Ω. If they are not 50 Ω, they should be specified.
5.1.2 General precautions
The general precautions listed in clause 6.3, 6.4 and 6.6 of IEC 60747-1:2006 apply. In
addition, special care should be taken to use low-ripple d.c. supplies and to decouple
adequately all bias supply voltages at the frequency of measurement. Also special care about
the load impedance of the test circuit should be taken to measure the output power.
The power levels are indicated by using the unit "dBm". The unit "dBm" expresses decibel
referred to 1 mW.
5.1.3 Handling precautions
When handling electrostatic-sensitive devices, the handling precautions given in IEC 61340-5-1
and IEC 61340-5-2, shall be observed.
5.1.4 Types
The devices in this standard are both package and chip types, measured using suitable test fixtures.
5.2 Linear (power) gain (G )
lin
5.2.1 Purpose
To measure the linear gain under specified conditions.
5.2.2 Circuit diagram
Frequency
meter
B
E Directional C
Variable
coupler
Device
attenuator
Isolator
being
measured
A
Signal
generator
Power
Bias
meter 1
supply
Directional
Spectrum
coupler
analyser
D
Power
meter 2
IEC  2246/01
Figure 1 – Circuit for the measurements of linear gain

– 18 – 60747-16-1 © IEC:2001+A1:2007(E)
5.2.3 Principle of measurement
In the circuit diagram shown in figure 1, the input power P and the output power P of the
i o
device being measured are derived from the following equations:
P = P + L (1)
i 1 1
P = P + L (2)
o 2 2
where P and P are the value indicated by the power meters 1 and 2, respectively.
1 2
L = L – L
1 A B
where L is the loss from point E to point A and L is the loss from point E to point B shown in
A B
figure 1, respectively.
L is the circuit loss from point C to point D shown in figure 1. P , P , P and P are expressed
2 i o 1 2
in dBm. L and L are expressed in decibels.
1 2
in dB is derived from equation (1) and (2) as follows:
Power gain G
p
G = P – P (3)
p o i
The linear gain G is the power gain measured in the region where the change of the output
lin
power in dBm is the same as that of the input power.
5.2.4 Circuit description and requirements
The purpose of the isolator is to enable the power level to the device being measured to be
kept constant irrespective of impedance mismatches at its input.
The circuit losses L and L should be measured beforehand.
1 2
5.2.5 Precautions to be observed
Oscillation, which is checked by a spectrum analyser, should be eliminated during these
measurements. The termination must be capable of handling the power fed.
Harmonics or spurious responses of the signal generator should be reduced to negligible.
5.2.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
An adequate input power is applied to the device being measured.
By varying input power, confirm that the change of the output power in dBm is the same as
that of the input power.
The gain measured in the region where the change of output power is the same as that of
input power is linear gain G .
lin
5.2.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency
60747-16-1 © IEC:2001+A1:2007(E) – 19 –
5.3 Linear (power) gain flatness (ΔG )
lin
5.3.1 Purpose
To measure the linear gain flatness under specified conditions.
5.3.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.3.3 Principle of measurement
See the principle of measurements of 5.2.3.
Linear gain flatness is derived from the following equation.
ΔG = G – G (4)
lin linmax linmin
where G and G are maximum linear gain and minimum linear gain in the specified
linmax linmin
frequency band at the specified input power, respectively.
5.3.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.3.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.3.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
An adequate input power level is applied to the device being measured.
By varying input power level, confirm that the change of output power in dBm is the same as
that of input power.
Decide the suitable input power level for measuring linear gain.
Vary the frequency in the specified frequency band with the same input power level.
Obtain the maximum linear gain G and the minimum linear gain G in the specified
linmax linmin
frequency band.
Linear gain flatness ΔG is derived from equation (4).
lin
5.3.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency band
– 20 – 60747-16-1 © IEC:2001+A1:2007(E)
5.4 Power gain (G )
p
5.4.1 Purpose
To measure the power gain under specified conditions.
5.4.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.4.3 Principle of measurement
See the principle of measurements of 5.2.3.
5.4.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.4.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.4.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The specified input power P is applied to the device being measured.
i
The output power P is measured.
o
5.4.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency
– Input power
5.5 (Power) gain flatness (ΔG )
p
5.5.1 Purpose
To measure the power gain flatness under specified conditions.
5.5.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.5.3 Principle of measurement
See the principle of measurements of 5.2.3.

60747-16-1 © IEC:2001+A1:2007(E) – 21 –
Power gain flatness is derived from the following equation.
ΔG = G – G (5)
p pmax pmin
where G and G are the maximum power gain and the minimum power gain in the
pmax pmin
specified frequency band at the specified input power, respectively.
5.5.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.5.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.5.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The input power P is applied to the device being measured.
i
is measured.
The output power P
o
The power gain is calculated by equation (3).
The frequency in the specified band is varied continuously with the same input power level.
Obtain the maximum power gain G and the minimum power gain G in the specified
pmax pmin
frequency band.
Power gain flatness is derived from equation (5).
5.5.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency band
– Input power
5.6 (Maximum available) gain reduction (ΔG )
red
5.6.1 Purpose
To measure the gain reduction of an AGC amplifier under specified conditions.
5.6.2 Circuit diagram
See the circuit diagram shown in figure 1, where bias supply contains AGC bias.
5.6.3 Principle of measurement
See the principle of measurements of 5.2.3.

– 22 – 60747-16-1 © IEC:2001+A1:2007(E)
5.6.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.6.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.6.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The AGC bias is set to specified values giving the maximum linear gain G .
linmax
An adequate input power is applied to the device being measured.
By varying input power, confirm the change of output power in dBm is the same as that of
input power.
The gain, measured in the region where the change of output power is the same as that of
input power, is maximum linear gain G .
linmax
The AGC bias is set to the specified value giving the minimum linear gain G .
linmin
The minimum linear gain G is measured in dB in the same way as above.
linmin
ΔG = G – G (6)
red linmax linmin
5.6.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency
– AGC bias giving the maximum linear gain and t
...

IEC 60747-16-1 ®
Edition 1.0 2001-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

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IEC 60747-16-1 ®
Edition 1.0 2001-11
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –

Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
PRICE CODE
INTERNATIONALE
CODE PRIX X
ICS 31.080.99 ISBN 978-2-83220-356-9

– 2 – 60747-16-1 © IEC:2001
CONTENTS
FOREWORD . 4

1 Scope . 6
2 Normative references . 6
3 Terminology . 6
4 Essential ratings and characteristics . 8
4.1 General . 8
4.2 Application related description . 9
4.3 Specification of the function . 10
4.4 Limiting values (absolute maximum rating system) . 11
4.5 Operating conditions (within the specified operating temperature range) . 13
4.6 Electrical characteristics . 13
4.7 Mechanical and environmental ratings, characteristics and data . 15
4.8 Additional information . 15
5 Measuring methods . 15
5.1 General . 15
5.2 Linear (power) gain (G ) . 16
lin
5.3 Linear (power) gain flatness (∆G ) . 18
lin
5.4 Power gain (G ) . 19
p
5.5 (Power) gain flatness (∆G ) . 19
p
5.6 (Maximum available) gain reduction (∆G ) . 20
red
5.7 Limiting output power (P ) . 21
o(ltg)
5.8 Output power (P ) . 22
o
5.9 Output power at 1 dB gain compression (P ) . 23
o(1dB)
5.10 Noise figure (F) . 24
5.11 Intermodulation distortion (P /P ) (two-tone) . 26
n 1
5.12 Power at the intercept point (for intermodulation products) (P ) . 28
n(IP)
5.13 Magnitude of the input reflection coefficient (input return loss) (s ) . 29
5.14 Magnitude of the output reflection coefficient (output return loss) (s ) . 30
5.15 Magnitude of the reverse transmission coefficient (isolation) (s ) . 34
5.16 Conversion coefficient of amplitude modulation to phase modulation (α ) . 35
(AM-PM)
5.17 Group delay time (t ) . 37
d(grp)
5.18 Power added efficiency . 38
5.19 nth order harmonic distortion ratio (P P ) . 40
nth 1
/
5.20 Output noise power (P ) . 41
N
5.21 Spurious intensity under specified load VSWR (P /P ) . 43
sp o
60747-16-1 © IEC:2001 – 3 –
Figure 1 – Circuit for the measurements of linear gain . 16
Figure 2 – Basic circuit for the measurement of the noise figure . 24
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion . 26
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss) . 29
Figure 5 – Circuit for the measurement of output reflection coefficient . 32
Figure 6 – Circuit for the measurement of isolation . 34
Figure 7 – Basic circuit for the measurement of α . 35
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency . 38
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio . 40
Figure 10 – Circuit diagram for the measurement of the output noise power . 42
Figure 11 – Circuit diagram for the measurement of the spurious intensity . 44

– 4 – 60747-16-1 © IEC:2001
INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers

FOREWORD
1) The IEC (International Electrotechnical Commission) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of the IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, the IEC publishes International Standards. Their preparation is
entrusted to technical committees; any IEC National Committee interested in the subject dealt with may
participate in this preparatory work. International, governmental and non-governmental organizations liaising
with the IEC also participate in this preparation. The IEC collaborates closely with the International
Organization for Standardization (ISO) in accordance with conditions determined by agreement between the
two organizations.
2) The formal decisions or agreements of the IEC on technical matters express, as nearly as possible, an
international consensus of opinion on the relevant subjects since each technical committee has representation
from all interested National Committees.
3) The documents produced have the form of recommendations for international use and are published in the form
of standards, technical specifications, technical reports or guides and they are accepted by the National
Committees in that sense.
4) In order to promote international unification, IEC National Committees undertake to apply IEC International
Standards transparently to the maximum extent possible in their national and regional standards. Any
divergence between the IEC Standard and the corresponding national or regional standard shall be clearly
indicated in the latter.
5) The IEC provides no marking procedure to indicate its approval and cannot be rendered responsible for any
equipment declared to be in conformity with one of its standards.
6) Attention is drawn to the possibility that some of the elements of this International Standard may be the subject
of patent rights. The IEC shall not be held responsible for identifying any or all such patent rights.
International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
This bilingual version (2012-09) corresponds to the monolingual English version, published in
2001-11.
The text of this standard is based on the following documents:
FDIS Report on voting
47E/200/FDIS 47E/204/RVD
Full information on the voting for the approval of this standard can be found in the report on
voting indicated in the above table.
The French version of this standard has not been voted upon.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.

60747-16-1 © IEC:2001 – 5 –
The committee has decided that the contents of this publication will remain unchanged
until 2004. At this date, the publication will be
• reconfirmed;
• withdrawn;
• replaced by a revised edition, or
• amended.
– 6 – 60747-16-1 © IEC:2001
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers

1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative references
The following normative documents contain provisions which, through reference in this text,
constitute provisions of this part of IEC 60747. For dated references, subsequent amend-
ments to, or revisions of, any of these publications do not apply. However, parties to
agreements based on this part of IEC 60747 are encouraged to investigate the possibility of
applying the most recent editions of the normative documents indicated below. For undated
references, the latest edition of the normative document referred to applies. Members of IEC
and ISO maintain registers of currently valid International Standards.
IEC 60617-12:1997, Graphical symbols for diagrams – Part 12: Binary logic elements
IEC 60617-13:1993, Graphical symbols for diagrams – Part 13: Analogue elements
IEC 60747-1:1983, Semiconductor devices – Discrete devices – Part 1: General
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60748-2:1997, Semiconductor devices – Integrated circuits – Part 2: Digital integrated
circuits
IEC 60748-3:1986, Semiconductor devices – Integrated circuits – Part 3: Analogue integrated
circuits
IEC 60748-4:1997, Semiconductor devices – Integrated circuits – Part 4: Interface integrated
circuits
3 Terminology
3.1
linear (power) gain G
lin
power gain in the linear region of the power transfer curve P (dBm) = f(P )
o i
NOTE In this region, ∆P (dBm) = ∆P (dBm).
o i
3.2
linear (power) gain flatness ∆G
lin
power gain flatness when the operating point lies in the linear region of the power transfer
curve
3.3
power gain G , G
p
ratio of the output power to the input power
NOTE Usually the power gain is expressed in decibels.

60747-16-1 © IEC:2001 – 7 –
3.4
(power) gain flatness ∆G
p
difference between the maximum and minimum power gain for a specified input power in a
specified frequency range
3.5
(maximum available) gain reduction ∆G
red
difference in decibels between the maximum and minimum power gains that can be provided
by the gain control
3.6  Output power limiting
3.6.1
output power limiting range
range in which, for rising input power, the output power is limiting
NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
3.6.2
limiting output power P
o(ltg)
output power in the range where it is limiting
3.6.3
limiting output power flatness ∆P
o(ltg)
difference between the maximum and minimum output power in the output power limiting
range:
∆P = P – P
o(ltg) o(ltg,max) o(ltg,min)
3.7
intermodulation distortion P /P
n i
ratio of
the output power of the nth order component to
the output power of the fundamental component,
at a specified input power
3.8
power at the intercept point (for intermodulation products) P
n(IP)
output power at intersection between the extrapolated output powers of the fundamental
component and the nth order intermodulation components, when the extrapolation is carried
out in a diagram showing the output power of the components (in decibels) as a function of
the input power (in decibels)
3.9
magnitude of the input reflection coefficient (input return loss) s 
see 3.5.2.1 of IEC 60747-7
3.10
magnitude of the output reflection coefficient (output return loss) s 
see 3.5.2.2 of IEC 60747-7
3.11
magnitude of the reverse transmission coefficient (isolation) s 
see 3.5.2.4 of IEC 60747-7
– 8 – 60747-16-1 © IEC:2001
3.12
conversion coefficient of amplitude modulation to phase modulation α
(AM-PM)
quotient of
the phase deviation of the output signal (in degrees) by
the change in input power (in decibels) producing it
3.13
group delay time t
d(grp)
ratio of the change, with angular frequency, of the phase shift through the amplifier
NOTE Usually group delay time is very close in value to input-to-output delay time.
3.14
nth order harmonic distortion ratio P /P
nth 1
ratio of the power of the nth order harmonic component measured at the output port of the
device to the power of the fundamental frequency measured at the output port for a specified
output power
3.15
output noise power P
N
maximum noise power measured at the output port of the device within a specified bandwidth
in a specified frequency range for a specified output power
3.16
spurious intensity under specified load VSWR P /P
sp o
ratio of the maximum spurious power measured at the output port of the device to the power
of the fundamental frequency measured at the output port under specified load VSWR
4 Essential ratings and characteristics
4.1 General
4.1.1 Circuit identification and types
4.1.1.1 Designation and types
The indication of type (device name), the category of the circuit and the technology applied
should be given.
Microwave amplifiers are divided into four categories:
Type A: Low-noise type.
Type B: Auto-gain control type.
Type C: Limiting type.
Type D: Power type.
4.1.1.2 General function description
A general description of the function performed by the integrated circuit microwave amplifiers
and the features for the application should be made.

60747-16-1 © IEC:2001 – 9 –
4.1.1.3 Manufacturing technology
The manufacturing technology, for example, semiconductor monolithic integrated circuit, thin-
film integrated circuit, micro-assembly, should be stated. This statement should include
details of the semiconductor technologies such as MESFET, MISFET, Si bipolar transistor,
HBT, etc.
4.1.1.4 Package identification
The following statements should be made:
a) IEC and/or national reference number of the outline drawing, or drawing of non-standard
package including terminal numbering;
b) principal package material; for example, metal, ceramic, plastic.
4.1.1.5 Main application
The main application should be stated, if necessary. If the device has restrictive applications,
these should be stated here.
4.2 Application related description
Information on the application of the integrated circuit and its relation to the associated
devices should be given.
4.2.1 Conformance to system and/or interface information
It should be stated whether the integrated circuit conforms to an application system and/or
interface standard or recommendation.
The detailed information about application systems, equipment and circuits such as VSAT
systems, DBS receivers, microwave landing systems, etc., should also be given.
4.2.2 Overall block diagram
A block diagram of the applied systems should be given, if necessary.
4.2.3 Reference data
The most important properties to permit comparison between derivative types should be given.
4.2.4 Electrical compatibility
It should be stated whether the integrated circuit is electrically compatible with other particular
integrated circuits or families of integrated circuits or whether special interfaces are required.
Details should be given of the type of the input and output circuits, for example, input/output
impedances, d.c. block, open-drain, etc. Interchangeability with other devices, if any, should
be given.
4.2.5 Associated devices
If applicable, the following should be stated here:
– devices necessary for correct operation (list with type number, name, and function);
– peripheral devices with direct interfacing (list with type number, name, and function).

– 10 – 60747-16-1 © IEC:2001
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
A detail block diagram or equivalent circuit information of the integrated circuit microwave
amplifiers should be given. The block diagram should be composed of the following:
1) functional blocks;
2) mutual interconnections among the functional blocks;
3) individual functional units within the functional blocks;
4) mutual interconnections among the individual functional blocks;
5) function of each external connection;
6) interdependence between the separate functional blocks.
The block diagram should identify the function of each external connection and, where no
ambiguity can arise, can also show the terminal symbols and/or numbers. If the encapsulation
has metallic parts, any connection to them from external terminals should be indicated. The
connections with any associated external electrical elements should be stated, where necessary.
As additional information, the complete electrical circuit diagram can be reproduced, but not
necessarily with indications of the values of the circuit components. The graphical symbol for
the function shall be given. This may be obtained from a catalogue of standards of graphical
symbols or designed according to the rules of IEC 60617-12 or IEC 60617-13.
4.3.2 Identification and function of terminals
All terminals should be identified on the block diagram (supply terminals, input or output
terminals, input/output terminals).
The terminal functions 1)-4) should be indicated in a table as follows:
Terminal Terminal 1) Terminal 2) Function Function of terminal
number symbol designation
3) Input/output 4) Type of
identification input/output circuit

1) Terminal name
A terminal name to indicate the function terminal should be given. Supply terminals,
ground terminals, blank terminals (with abbreviation NC), non-usable terminals (with
abbreviation NU) should be distinguished.
2) Function
A brief indication of the terminal function should be given.
– Each function of multi-role terminals, that is terminals that have multiple functions.
– Each function of the integrated circuit selected by mutual pin connections,
programming and/or application of function selection data to the function selection pin,
such as mode selection pin.
3) Input/output identification
Input, output, input/output, and multiplex input/output terminals should be distinguished.
4) Type of input/output circuits
The type of the input and output circuits, for example, input/output impedances, with or
without d.c. block, etc., should be distinguished.

60747-16-1 © IEC:2001 – 11 –
5) Type of ground
If the baseplate of the package is used as ground, this should be stated.
Example:
Supply voltage
Integrated
Input(s) NC
circuit
microwave
NU Output(s)
amplifiers
Ground
4.3.3 Functional description
The function performed by the circuit should be specified, including the following information:
– basic function;
– relation to external terminals;
– operation mode (for example, set-up method, preference, etc.);
– interrupt handling.
4.3.4 Family-related characteristics
In this part, all the family-specific functional descriptions shall be stated (refer to IEC 60748-2,
IEC 60748-3 and IEC 60748-4).
If ratings and characteristics and function characteristics exist for the family, the relevant part
of IEC 60748 should be used (for example, for microprocessors, see IEC 60748-2, Chapter III,
Section 3).
NOTE For each new device family, specific items shall be added in the relevant part of IEC 60748.
4.4 Limiting values (absolute maximum rating system)
The table of these values contains the following.
a) Any interdependence of limiting conditions shall be specified.
b) If externally connected and/or attached elements, for example heatsinks, have an
influence on the values of the ratings, the ratings shall be prescribed for the integrated
circuit with the elements connected and/or attached.
c) If limiting values are exceeded for transient overload, the permissible excess and their
duration shall be specified.
d) Where minimum and maximum values differ during programming of the device, this should
be stated.
e) All voltages are referenced to a specified reference terminal (V , G , etc.).
ss ND
f) In satisfying the following clauses, if maximum and/or minimum values are quoted, the
manufacturer must indicate whether he refers to the absolute magnitude or to the
algebraic value of the quantity.
g) The ratings given must cover the operation of the multi-function integrated circuit over the
specified range of operating temperatures. Where such ratings are temperature-
dependent, this dependence should be indicated.

– 12 – 60747-16-1 © IEC:2001
4.4.1 Electrical limiting values
Limiting values should be specified as follows.
Parameters Min. Max.
(1) Power supply voltages + +
(2) Power supply currents (where appropriate) +
(3) Input voltage(s) (where appropriate) + +
(4) Output voltage(s) (where appropriate) + +
(5) Input current(s) (where appropriate) +
(6) Output current(s) (where appropriate) +
(7) Other terminal voltage(s) (where appropriate) + +
(8) Other terminal current(s) (where appropriate) +
(9) Voltage difference between input and output + +
(where appropriate)
(10) Power dissipation +
The detail specification may indicate those values within the table including note 1 and note 2.
Parameters (Note 1, Note 2) Symbols Min. Max. Unit

NOTE 1  Where appropriate, in accordance with the type of circuit considered.
NOTE 2  For power supply voltage range:
– limiting value(s) of the continuous voltage(s) at the supply terminal(s) with
respect to a special electrical reference point;
– where appropriate, limiting value between specified supply terminals;
– when more than one voltage supply is required, a statement should be made as
to whether the sequence in which these supplies are applied is significant: if so,
the sequence should be stated;
– when more than one supply is needed, it may be necessary to state the
combinations of ratings for these supply voltages and currents.
4.4.2 Temperatures
1) Operating temperature
2) Storage temperature
3) Channel temperature (type C and type D only)
4) Lead temperature (for soldering).
The detail specification may indicate those values within the table including the note.
Parameters (Note) Symbols Min. Max. Unit

NOTE Where appropriate, in accordance with the type of circuit considered.

60747-16-1 © IEC:2001 – 13 –
4.5 Operating conditions (within the specified operating temperature range)
They are not to be inspected but may be used for quality assessment purpose.
4.5.1 Power supplies positive and/or negative values
4.5.2 Initialization sequences (where appropriate)
If special initialization sequences are necessary, the power supply sequencing and the
initialization procedure should be specified.
4.5.3 Input voltage(s) (where appropriate)
4.5.4 Output current(s) (where appropriate)
4.5.5 Voltage and/or current of other terminal(s)
4.5.6 External elements (where appropriate)
4.5.7 Operating temperature range
4.6 Electrical characteristics
The characteristics shall apply over the full operating temperature range, unless otherwise
specified.
Each characteristic of 4.6.1 and 4.6.2 should be stated, either
a) over the specified range of operating temperatures, or
b) at a temperature of 25 °C, and at maximum and minimum operating temperatures.
4.6.1 Static characteristics
The parameters should be specified corresponding to the type as follows.
a
Parameters Min. Typ. Max. Types
A B C D
4.6.1.1 Power supply current + + + + + + +
4.6.1.2 Thermal resistance  +  + +
a
Optional
The detail specification may indicate those values within the table.
a
Characteristics Symbols Conditions Min. Typ. Max. Unit

a
Optional
4.6.2 Dynamic or a.c. characteristics
Each dynamic or a.c. electrical characteristic should be stated under specified electrical
worst-case conditions with respect to the recommended range of supply voltages, as stated
in 4.5.1.
– 14 – 60747-16-1 © IEC:2001
The parameters should be specified corresponding to the type as follows.
Parameters Min. Max. Types
A B C D
4.6.2.1 Linear gain + + + +
4.6.2.2 Linear gain flatness + + + +
4.6.2.3 Power gain +  + +
4.6.2.4 Power gain flatness + + +
4.6.2.5 Gain reduction +  +
4.6.2.6 Output power +  + +
4.6.2.7 Output power at 1 dB gain compression +  + +
4.6.2.8 Limiting output power + +  +
4.6.2.9 Limiting output power flatness +  +
4.6.2.10 Intermodulation distortion +  + +
4.6.2.11 Power at intercept point +  + +
4.6.2.12 Noise figure + +
4.6.2.13 Magnitude of the input reflection coefficient + + + + +
(input return loss)
b
4.6.2.14 Magnitude of the output reflection coefficient + + + +
(output return loss)
4.6.2.15 Magnitude of the reverse transmission coefficient + + + + +
(isolation)
4.6.2.16 Conversion coefficient of amplitude modulation to +  + +
phase modulation (where appropriate)
4.6.2.17 Group delay time (where appropriate) + + + +
a
4.6.2.18 Time constant for automatic gain control
4.6.2.19 Power added efficiency +   +
(where appropriate)
4.6.2.20 nth order harmonic distortion ratio  +  +
(where appropriate) (note 2)
4.6.2.21 Output noise power  +  +
(where appropriate) + +
4.6.2.22 Spurious intensity under specified load VSWR
(where appropriate) (note 2)
NOTE 1  It is necessary for types B and D to select either the parameter set of 4.6.2.1, 4.6.2.2 and 4.6.2.7 or
that of 4.6.2.3, 4.6.2.4 and 4.6.2.6.
NOTE 2  Generally expressed in dBc.
a
Under consideration.
b
Optional. For type D, the devices are sometimes required to specify under large signal operation instead of
small signal operation. Although the definition is the same for both operating conditions, the different
measuring method should be employed for the parameter under large signal operation from that under small
signal operation.
The detail specification may indicate those values within the table.
a
Characteristics Symbols Conditions Min. Typ. Max. Unit

a
Optional
60747-16-1 © IEC:2001 – 15 –
4.7 Mechanical and environmental ratings, characteristics and data
Any specific mechanical and environmental ratings applicable should be stated (see also
IEC 60747-1, Chapter VI, clause 7).
4.8 Additional information
Where appropriate, the following information should be given.
4.8.1 Equivalent input and output circuit
Detailed information should be given regarding the type of the input and output circuits; for
example, input/output impedances, d.c. block, open-drain, etc.
4.8.2 Internal protection
A statement should be given to indicate whether the integrated circuit contains internal
protection against high static voltages or electrical fields.
4.8.3 Capacitors at terminals
If capacitors for the input/output d.c. block are needed, these capacitances should be stated.
4.8.4 Thermal resistance
4.8.5 Interconnections to other types of circuit
Where appropriate, details of the interconnections to other circuits, for example, detector
circuit for AGC, sense amplifiers, buffer, should be given.
4.8.6 Effects of externally connected component(s)
Curves or data indicating the effect of externally connected component(s) that influence the
characteristics may be given.
4.8.7 Recommendations for any associated device(s)
For example, decoupling of power supply to a high-frequency device should be stated.
4.8.8 Handling precautions
Where appropriate, handling precautions specific to the circuit should be stated (see also
IEC 60747-1, Chapter IX).
4.8.9 Application data
4.8.10 Other application information
4.8.11 Date of issue of the data sheet
5 Measuring methods
5.1 General
5.1.1 Characteristic impedances
The input and output characteristic impedances of the measurement system, shown in the
circuit in this standard, are 50 Ω. If they are not 50 Ω, they should be specified.

– 16 – 60747-16-1 © IEC:2001
5.1.2 General precautions
The general precautions listed in clause 2 of IEC 60747-1, Chapter VII, Section One apply. In
addition, special care should be taken to use low-ripple d.c. supplies and to decouple
adequately all bias supply voltages at the frequency of measurement. Also special care about
the load impedance of the test circuit should be taken to measure the output power.
The power levels are indicated by using the unit "dBm". The unit "dBm" expresses decibel
referred to 1 mW.
5.1.3 Handling precautions
When handling electrostatic-sensitive devices, the handling precautions given in clause 1 of
IEC 60747-1, Chapter IX, shall be observed.
5.1.4 Types
The devices in this standard are both package and chip types, measured using suitable test fixtures.
5.2 Linear (power) gain (G )
lin
5.2.1 Purpose
To measure the linear gain under specified conditions.
5.2.2 Circuit diagram
Frequency
meter
E B C
Directional
Variable
coupler
Device
attenuator
Isolator
being
measured
A
Signal
generator
Power
Bias
meter 1
supply
Directional
Spectrum
coupler
analyser
D
Power
meter 2
IEC  2246/01
Figure 1 – Circuit for the measurements of linear gain

60747-16-1 © IEC:2001 – 17 –
5.2.3 Principle of measurement
In the circuit diagram shown in figure 1, the input power P and the output power P of the
i o
device being measured are derived from the following equations:
P = P + L (1)
i 1 1
P = P + L (2)
o 2 2
where P and P are the value indicated by the power meters 1 and 2, respectively.
1 2
L = L – L
1 A B
where L is the loss from point E to point A and L is the loss from point E to point B shown in
A B
figure 1, respectively.
L is the circuit loss from point C to point D shown in figure 1. P , P , P and P are expressed
2 i o 1 2
in dBm. L and L are expressed in decibels.
1 2
Power gain G in dB is derived from equation (1) and (2) as follows:
p
G = P – P (3)
p o i
The linear gain G is the power gain measured in the region where the change of the output
lin
power in dBm is the same as that of the input power.
5.2.4 Circuit description and requirements
The purpose of the isolator is to enable the power level to the device being measured to be
kept constant irrespective of impedance mismatches at its input.
The circuit losses L and L should be measured beforehand.
1 2
5.2.5 Precautions to be observed
Oscillation, which is checked by a spectrum analyser, should be eliminated during these
measurements. The termination must be capable of handling the power fed.
Harmonics or spurious responses of the signal generator should be reduced to negligible.
5.2.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
An adequate input power is applied to the device being measured.
By varying input power, confirm that the change of the output power in dBm is the same as
that of the input power.
The gain measured in the region where the change of output power is the same as that of
input power is linear gain G .
lin
5.2.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency
– 18 – 60747-16-1 © IEC:2001
∆G )
5.3 Linear (power) gain flatness (
lin
5.3.1 Purpose
To measure the linear gain flatness under specified conditions.
5.3.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.3.3 Principle of measurement
See the principle of measurements of 5.2.3.
Linear gain flatness is derived from the following equation.
∆G = G – G (4)
lin linmax linmin
where G and G are maximum linear gain and minimum linear gain in the specified
linmax linmin
frequency band at the specified input power, respectively.
5.3.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.3.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.3.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
An adequate input power level is applied to the device being measured.
By varying input power level, confirm that the change of output power in dBm is the same as
that of input power.
Decide the suitable input power level for measuring linear gain.
Vary the frequency in the specified frequency band with the same input power level.
Obtain the maximum linear gain G and the minimum linear gain G in the specified
linmax linmin
frequency band.
Linear gain flatness ∆G is derived from equation (4).
lin
5.3.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency band
60747-16-1 © IEC:2001 – 19 –
5.4 Power gain (G )
p
5.4.1 Purpose
To measure the power gain under specified conditions.
5.4.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.4.3 Principle of measurement
See the principle of measurements of 5.2.3.
5.4.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.4.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.4.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The specified input power P is applied to the device being measured.
i
The output power P is measured.
o
5.4.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency
– Input power
5.5 (Power) gain flatness (∆G )
p
5.5.1 Purpose
To measure the power gain flatness under specified conditions.
5.5.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.5.3 Principle of measurement
See the principle of measurements of 5.2.3.

– 20 – 60747-16-1 © IEC:2001
Power gain flatness is derived from the following equation.
∆G = G – G (5)
p pmax pmin
where G and G are the maximum power gain and the minimum power gain in the
pmax pmin
specified frequency band at the specified input power, respectively.
5.5.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.5.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.5.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The input power P is applied to the device being measured.
i
The output power P is measured.
o
The power gain is calculated by equation (3).
The frequency in the specified band is varied continuously with the same input power level.
Obtain the maximum power gain G and the minimum power gain G in the specified
pmax pmin
frequency band.
Power gain flatness is derived from equation (5).
5.5.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency band
– Input power
5.6 (Maximum available) gain reduction (∆G )
red
5.6.1 Purpose
To measure the gain reduction of an AGC amplifier under specified conditions.
5.6.2 Circuit diagram
See the circuit diagram shown in figure 1, where bias supply contains AGC bias.
5.6.3 Principle of measurement
See the principle of measurements of 5.2.3.

60747-16-1 © IEC:2001 – 21 –
5.6.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.6.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.6.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The AGC bias is set to specified values giving the maximum linear gain G .
linmax
An adequate input power is applied to the device being measured.
By varying input power, confirm the change of output power in dBm is the same as that of
input power.
The gain, measured in the region where the change of output power is the same as that of
input power, is maximum linear gain G .
linmax
The AGC bias is set to the specified value giving the minimum linear gain G .
linmin
The minimum linear gain G is measured in dB in the same way as above.
linmin
∆G = G – G (6)
red linmax linmin
5.6.7 Specified conditions
– Ambient or reference-point temperature
– Bias conditions
– Frequency
– AGC bias giving the maximum linear gain and the minimum linear gain
5.7 Limiting output power (P )
o(ltg)
Limiting output power flatness (∆P )
o(ltg)
5.7.1 Purpose
To measure the limiting output power and limiting output power flatness under specified conditions.
5.7.2 Circuit diagram
See the circuit diagram shown in figure 1.
5.7.3 Principle of measurement
See the principle of measurements of 5.2.3.

– 22 – 60747-16-1 © IEC:2001
5.7.4 Circuit description and requirements
See the circuit description and requirements of 5.2.4.
5.7.5 Precautions to be observed
See the precautions to be observed of 5.2.5.
5.7.6 Measurement procedure
The frequency of the signal generator should be adjusted to the specified value.
The bias under specified conditions is applied.
The input power P is applied to the device being measured.
i
The output power P is measured.
o
By varying the input power between the lower and upper limits of limiting range, find the
minimum and maximum output powers (P and P ).
o(ltg,min) o(ltg,max)
The limiting output power (P ) and limiting output power flatness (∆P ) are derived from
o(ltg) o(ltg)
the following equations
...

IEC 60747-16-1 ®
Edition 1.2 2017-02
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
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inside
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

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IEC 60747-16-1 ®
Edition 1.2 2017-02
CONSOLIDATED VERSION
INTERNATIONAL
STANDARD
NORME
INTERNATIONALE
colour
inside
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –

Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
COMMISSION
ELECTROTECHNIQUE
INTERNATIONALE
ICS 31.080.99 ISBN 978-2-8322-3986-5

IEC 60747-16-1 ®
Edition 1.2 2017-02
CONSOLIDATED VERSION
REDLINE VERSION
VERSION REDLINE
colour
inside
Semiconductor devices –
Part 16-1: Microwave integrated circuits – Amplifiers

Dispositifs à semiconducteurs –
Partie 16-1: Circuits intégrés hyperfréquences – Amplificateurs

– 2 – IEC 60747-16-1:2001+AMD1:2007
+AMD2:2017 CSV © IEC 2017
CONTENTS
FOREWORD . 7
1 Scope . 9
2 Normative references . 9
3 Terminology Terms and definitions . 10
4 Essential ratings and characteristics . 12
4.1 General . 12
4.1.1 Circuit identification and types . 12
4.2 Application related description . 13
4.2.1 Conformance to system and/or interface information . 13
4.2.2 Overall block diagram . 13
4.2.3 Reference data . 13
4.2.4 Electrical compatibility . 13
4.2.5 Associated devices . 14
4.3 Specification of the function . 14
4.3.1 Detailed block diagram – Functional blocks . 14
4.3.2 Identification and function of terminals . 14
4.3.3 Functional description. 15
4.3.4 Family-related characteristics . 15
4.4 Limiting values (absolute maximum rating system) . 15
4.4.1 Electrical limiting values . 16
4.4.2 Temperatures . 16
4.5 Operating conditions (within the specified operating temperature range) . 17
4.5.1 Power supplies positive and/or negative values . 17
4.5.2 Initialization sequences (where appropriate) . 17
4.5.3 Input voltage(s) (where appropriate) . 17
4.5.4 Output current(s) (where appropriate) . 17
4.5.5 Voltage and/or current of other terminal(s) . 17
4.5.6 External elements (where appropriate) . 17
4.5.7 Operating temperature range . 17
4.6 Electrical characteristics . 17
4.6.1 Static characteristics . 17
4.6.2 Dynamic or a.c. characteristics . 18
4.7 Mechanical and environmental ratings, characteristics and data . 19
4.8 Additional information . 19
4.8.1 Equivalent input and output circuit . 19
4.8.2 Internal protection . 19
4.8.3 Capacitors at terminals . 19
4.8.4 Thermal resistance . 19
4.8.5 Interconnections to other types of circuit . 19
4.8.6 Effects of externally connected component(s) . 19
4.8.7 Recommendations for any associated device(s) . 19
4.8.8 Handling precautions . 19
4.8.9 Application data . 20
4.8.10 Other application information . 20
4.8.11 Date of issue of the data sheet . 20
5 Measuring methods . 20
5.1 General . 20
5.1.1 Characteristic impedances . 20
5.1.2 General precautions . 20
5.1.3 Handling precautions . 20
5.1.4 Types . 20

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5.2 Linear (power) gain (G ) . 20
lin
5.2.1 Purpose . 20
5.2.2 Circuit diagram . 21
5.2.3 Principle of measurement . 21
5.2.4 Circuit description and requirements . 21
5.2.5 Precautions to be observed . 21
5.2.6 Measurement procedure . 22
5.2.7 Specified conditions . 22
5.3 Linear (power) gain flatness (∆G ) . 22
lin
5.3.1 Purpose . 22
5.3.2 Circuit diagram . 22
5.3.3 Principle of measurement . 22
5.3.4 Circuit description and requirements . 22
5.3.5 Precautions to be observed . 22
5.3.6 Measurement procedure . 22
5.3.7 Specified conditions . 23
5.4 Power gain (G ) . 23
p
5.4.1 Purpose . 23
5.4.2 Circuit diagram . 23
5.4.3 Principle of measurement . 23
5.4.4 Circuit description and requirements . 23
5.4.5 Precautions to be observed . 23
5.4.6 Measurement procedure . 23
5.4.7 Specified conditions . 23
5.5 (Power) gain flatness (∆G ) . 24
p
5.5.1 Purpose . 24
5.5.2 Circuit diagram . 24
5.5.3 Principle of measurement . 24
5.5.4 Circuit description and requirements . 24
5.5.5 Precautions to be observed . 24
5.5.6 Measurement procedure . 24
5.5.7 Specified conditions . 24
5.6 (Maximum available) gain reduction (∆G ) . 25
red
5.6.1 Purpose . 25
5.6.2 Circuit diagram . 25
5.6.3 Principle of measurement . 25
5.6.4 Circuit description and requirements . 25
5.6.5 Precautions to be observed . 25
5.6.6 Measurement procedure . 25
5.6.7 Specified conditions . 25
5.7 Limiting output power (P ) and limiting output power flatness (∆P ) . 25
o(ltg)
o(ltg)
5.7.1 Purpose . 25
5.7.2 Circuit diagram . 26
5.7.3 Principle of measurement . 26
5.7.4 Circuit description and requirements . 26
5.7.5 Precautions to be observed . 26
5.7.6 Measurement procedure . 26
5.7.7 Specified conditions . 26
5.8 Output power (P ) . 26
o
5.8.1 Purpose . 26
5.8.2 Circuit diagram . 26
5.8.3 Principle of measurement . 26
5.8.4 Circuit description and requirements . 27
5.8.5 Precautions to be observed . 27
5.8.6 Measurement procedure . 27

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5.8.7 Specified conditions . 27
5.9 Output power at 1 dB gain compression (P ) . 27
o(1dB)
5.9.1 Purpose . 27
5.9.2 Circuit diagram . 27
5.9.3 Principle of measurement . 27
5.9.4 Circuit description and requirements . 27
5.9.5 Precautions to be observed . 27
5.9.6 Measurement procedure . 27
5.9.7 Specified conditions . 28
5.10 Noise figure (F) . 28
5.10.1 Purpose . 28
5.10.2 Circuit diagram . 28
5.10.3 Principle of measurement . 28
5.10.4 Circuit description and requirements . 29
5.10.5 Precautions to be observed . 29
5.10.6 Measurement procedure . 29
5.10.7 Specified conditions . 30
5.11 Intermodulation distortion (two-tone) (P /P ) . 30
n 1
5.11.1 Purpose . 30
5.11.2 Circuit diagram . 30
5.11.3 Principle of measurement . 30
5.11.4 Circuit description and requirements . 31
5.11.5 Precautions to be observed . 31
5.11.6 Measurement procedure . 31
5.11.7 Specified conditions . 31
5.12 Power at the intercept point (for intermodulation products) (P ) . 31
n(IP)
5.12.1 Purpose . 31
5.12.2 Circuit diagram . 32
5.12.3 Principle of measurement . 32
5.12.4 Circuit description and requirements . 32
5.12.5 Precautions to be observed . 32
5.12.6 Measurement procedure . 32
5.12.7 Specified conditions . 32
5.13 Magnitude of the input reflection coefficient (input return loss) (s |S |) . 32
5.13.1 Purpose . 32
5.13.2 Circuit diagram . 33
5.13.3 Principle of measurement . 33
5.13.4 Circuit description and requirements . 33
5.13.5 Precautions to be observed . 33
5.13.6 Measurement procedure . 33
5.13.7 Specified conditions . 34
5.14 Magnitude of the output reflection coefficient (output return loss) (s |S |) . 34
22 22
5.14.1 Magnitude of the output reflection coefficient (output return loss)
under small-signal operating condition . 34
5.14.2 Magnitude of the output reflection coefficient (output return loss)
under large-signal operating condition . 35
5.15 Magnitude of the reverse transmission coefficient (isolation) (s |S |) . 37
5.15.1 Purpose . 37
5.15.2 Circuit diagram . 38
5.15.3 Principle of measurement . 38
5.15.4 Circuit description and requirements . 38
5.15.5 Precautions to be observed . 38
5.15.6 Measurement procedure . 38
5.15.7 Specified conditions . 39

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5.16 Conversion coefficient of amplitude modulation to phase modulation
(α ) . 39
(AM-PM)
5.16.1 Purpose . 39
5.16.2 Circuit diagram . 39
5.16.3 Principle of measurement . 39
5.16.4 Circuit description and requirements . 40
5.16.5 Precautions to be observed . 40
5.16.6 Measurement procedure . 40
5.16.7 Specified conditions . 40
5.17 Group delay time (t ) . 40
d(grp)
5.17.1 Purpose . 40
5.17.2 Circuit diagram . 41
5.17.3 Principle of measurement . 41
5.17.4 Circuit description and requirements . 41
5.17.5 Precautions to be observed . 41
5.17.6 Measurement procedure . 41
5.17.7 Specified conditions . 41
5.18 Power added efficiency (η ) . 42
add
5.18.1 Purpose . 42
5.18.2 Circuit diagram . 42
5.18.3 Principle of measurement . 42
5.18.4 Circuit description and requirements . 43
5.18.5 Precautions to be observed . 43
5.18.6 Measurement procedure . 43
5.18.7 Specified conditions . 43
5.19 nth order harmonic distortion ratio (P /P ) . 43
nth 1
5.19.1 Purpose . 43
5.19.2 Circuit diagram . 44
5.19.3 Principle of measurement . 44
5.19.4 Circuit description and requirements . 44
5.19.5 Precautions to be observed . 44
5.19.6 Measurement procedure . 44
5.19.7 Specified conditions . 45
5.20 Output noise power (P ) . 45
N
5.20.1 Purpose . 45
5.20.2 Circuit diagram . 45
5.20.3 Principle of measurement . 45
5.20.4 Circuit description and requirements . 46
5.20.5 Precautions to be observed . 46
5.20.6 Measurement procedure . 46
5.20.7 Specified conditions . 46
5.21 Spurious intensity under specified load VSWR (P /P ) . 47
sp o
5.21.1 Purpose . 47
5.21.2 Circuit diagram . 47
5.21.3 Principle of measurement . 47
5.21.4 Circuit description and requirements . 47
5.21.5 Precautions to be observed . 47
5.21.6 Measurement procedure . 48
5.21.7 Specified conditions . 48
5.22 Adjacent channel power ratio (P /P ) . 48
adj o(mod)
5.22.1 Purpose . 48
5.22.2 Circuit diagram . 49
5.22.3 Principle of measurement . 49
5.22.4 Circuit description and requirement . 50
5.22.5 Precautions to be observed . 50

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5.22.6 Measurement procedure . 50
5.22.7 Specified conditions . 50
6 Verifying methods . 51
6.1 Load mismatch tolerance (Ψ ) . 51
L
6.1.1 Purpose . 51
6.1.2 Verification of method 1 (spurious intensity) . 51
6.1.3 Verification of method 2 (no discontinuity of the frequency response) . 53
6.2 Source mismatch tolerance (Ψ ) . 54
S
6.2.1 Purpose . 54
6.2.2 Verification of method 1 (spurious intensity) . 54
6.2.3 Verifying method 2 (no discontinuity of the frequency response) . 55
6.3 Load mismatch ruggedness (Ψ ) . 56
R
6.3.1 Purpose . 56
6.3.2 Circuit diagram . 57
6.3.3 Circuit description and requirements . 57
6.3.4 Precautions to be observed . 57
6.3.5 Test procedure . 57
6.3.6 Specified conditions . 58

Figure 1 – Circuit for the measurements of linear gain . 21
Figure 2 – Basic circuit for the measurement of the noise figure . 28
Figure 3 – Basic circuit for the measurements of two-tone intermodulation distortion . 30
Figure 4 – Circuit for the measurements of magnitude of input/output reflection
coefficient (input/output return loss) . 33
Figure 5 – Circuit for the measurement of output reflection coefficient . 36
Figure 6 – Circuit for the measurement of isolation . 38
Figure 7 – Basic circuit for the measurement of α . 39
(AM-PM)
Figure 8 – Circuit for the measurement of the power added efficiency . 42
Figure 9 – Circuit for the measurements of the nth order harmonic distortion ratio . 44
Figure 10 – Circuit diagram for the measurement of the output noise power . 45
Figure 11 – Circuit diagram for the measurement of the spurious intensity . 47
Figure 12 – Circuit for the measurement of the adjacent channel power ratio . 49
Figure 13 – Circuit for the verification of load mismatch tolerance in method 1 . 51
Figure 14 – Circuit for the verification of load mismatch tolerance in method 2 . 53
Figure 15 – Circuit for the verification of source mismatch tolerance in method 1 . 54
Figure 16 – Circuit for the verification of source mismatch tolerance in method 2 . 55
Figure 17 – Circuit for the verification of load mismatch ruggedness . 57

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INTERNATIONAL ELECTROTECHNICAL COMMISSION
____________
SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers
FOREWORD
1) The International Electrotechnical Commission (IEC) is a worldwide organization for standardization comprising
all national electrotechnical committees (IEC National Committees). The object of IEC is to promote
international co-operation on all questions concerning standardization in the electrical and electronic fields. To
this end and in addition to other activities, IEC publishes International Standards, Technical Specifications,
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Publication(s)”). Their preparation is entrusted to technical committees; any IEC National Committee interested
in the subject dealt with may participate in this preparatory work. International, governmental and non-
governmental organizations liaising with the IEC also participate in this preparation. IEC collaborates closely
with the International Organization for Standardization (ISO) in accordance with conditions determined by
agreement between the two organizations.
2) The formal decisions or agreements of IEC on technical matters express, as nearly as possible, an international
consensus of opinion on the relevant subjects since each technical committee has representation from all
interested IEC National Committees.
3) IEC Publications have the form of recommendations for international use and are accepted by IEC National
Committees in that sense. While all reasonable efforts are made to ensure that the technical content of IEC
Publications is accurate, IEC cannot be held responsible for the way in which they are used or for any
misinterpretation by any end user.
4) In order to promote international uniformity, IEC National Committees undertake to apply IEC Publications
transparently to the maximum extent possible in their national and regional publications. Any divergence
between any IEC Publication and the corresponding national or regional publication shall be clearly indicated in
the latter.
5) IEC itself does not provide any attestation of conformity. Independent certification bodies provide conformity
assessment services and, in some areas, access to IEC marks of conformity. IEC is not responsible for any
services carried out by independent certification bodies.
6) All users should ensure that they have the latest edition of this publication.
7) No liability shall attach to IEC or its directors, employees, servants or agents including individual experts and
members of its technical committees and IEC National Committees for any personal injury, property damage or
other damage of any nature whatsoever, whether direct or indirect, or for costs (including legal fees) and
expenses arising out of the publication, use of, or reliance upon, this IEC Publication or any other IEC
Publications.
8) Attention is drawn to the Normative references cited in this publication. Use of the referenced publications is
indispensable for the correct application of this publication.
9) Attention is drawn to the possibility that some of the elements of this IEC Publication may be the subject of
patent rights. IEC shall not be held responsible for identifying any or all such patent rights.
This consolidated version of the official IEC Standard and its amendments has been prepared
for user convenience.
IEC 60747-16-1 edition 1.2 contains the first edition (2001-11) [documents 47E/200/FDIS and
47E/204/RVD], its amendment 1 (2007-01) [documents 47E/305/FDIS and 47E/317/RVD] and its
amendment 2 (2017-02) [documents 47E/500/CDV and 47E/518/RVC].
In this Redline version, a vertical line in the margin shows where the technical content
is modified by amendments 1 and 2. Additions are in green text, deletions are
in strikethrough red text. A separate Final version with all changes accepted is
available in this publication.

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International Standard IEC 60747-16-1 has been prepared by subcommittee 47E: Discrete
semiconductor devices, of IEC technical committee 47: Semiconductor devices.
The French version of this standard has not been voted upon.
This publication has been drafted in accordance with the ISO/IEC Directives, Part 3.
The committee has decided that the contents of the base publication and its amendments will
remain unchanged until the stability date indicated on the IEC web site under
"http://webstore.iec.ch" in the data related to the specific publication. At this date, the
publication will be
• reconfirmed,
• withdrawn,
• replaced by a revised edition, or
• amended.
IMPORTANT – The 'colour inside' logo on the cover page of this publication indicates
that it contains colours which are considered to be useful for the correct
understanding of its contents. Users should therefore print this document using a
colour printer.
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SEMICONDUCTOR DEVICES –
Part 16-1: Microwave integrated circuits – Amplifiers

1 Scope
This part of IEC 60747 provides the terminology, the essential ratings and characteristics, as
well as the measuring methods for integrated circuit microwave power amplifiers.
2 Normative references
The following normative documents contain provisions which, through reference in this text,
constitute provisions of this part of IEC 60747. For dated references, subsequent amend-
ments to, or revisions of, any of these publications do not apply. However, parties to
agreements based on this part of IEC 60747 are encouraged to investigate the possibility of
applying the most recent editions of the normative documents indicated below. For undated
references, the latest edition of the normative document referred to applies. Members of IEC
and ISO maintain registers of currently valid International Standards.
IEC 60050-702, International Electrotechnical Vocabulary – Chapter 702: Oscillations, signals
and related devices (available at: http://www.electropedia.org)
IEC 60617-12:1997, Graphical symbols for diagrams – Part 12: Binary logic elements
IEC 60617-13:1993, Graphical symbols for diagrams – Part 13: Analogue elements
IEC 60617, Graphical symbols for diagrams (available at: )
IEC 60747-1:1983 2006, Semiconductor devices – Discrete devices – Part 1: General
IEC 60747-1:2006/AMD1:2010
IEC 60747-4:2007, Semiconductor devices – Discrete devices – Part 4: Microwave diodes and
transistors
IEC 60747-4:2007/AMD1:2017
IEC 60747-7:2000, Semiconductor devices – Part 7: Bipolar transistors
IEC 60748-2:1997, Semiconductor devices – Integrated circuits – Part 2: Digital integrated
circuits
IEC 60748-3:1986, Semiconductor devices – Integrated circuits – Part 3: Analogue integrated
circuits
IEC 60748-3:1986/AMD1:1991
IEC 60748-3:1986/AMD2:1994
IEC 60748-4:1997, Semiconductor devices – Integrated circuits – Part 4: Interface integrated
circuits
IEC/TS 61340-5-1, Electrostatics - Part 5-1: Protection of electronic devices from electrostatic
phenomena - General requirements

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IEC/TS 61340-5-2, Electrostatics - Part 5-2: Protection of electronic devices from electrostatic
phenomena - User guide
3 Terminology Terms and definitions
For the purposes of this document, the following terms and definitions apply.
3.1
linear (power) gain G
lin
power gain in the linear region of the power transfer curve P (dBm) = f(P )
o i
NOTE In this region, ∆P (dBm) = ∆P (dBm).
o i
3.2
linear (power) gain flatness ∆G
lin
power gain flatness when the operating point lies in the linear region of the power transfer
curve
3.3
power gain G , G
p
ratio of the output power to the input power
NOTE Usually the power gain is expressed in decibels.
3.4
(power) gain flatness ∆G
p
difference between the maximum and minimum power gain for a specified input power in a
specified frequency range
3.5
(maximum available) gain reduction ∆G
red
difference in decibels between the maximum and minimum power gains that can be provided
by the gain control
3.6  Output power limiting
3.6.1
output power limiting range
range in which, for rising input power, the output power is limiting
NOTE For specification purposes, the limits of this range are specified by specified lower and upper limit values
for the input power.
3.6.2
limiting output power P
o(ltg)
output power in the range where it is limiting
3.6.3
limiting output power flatness ∆P
o(ltg)
difference between the maximum and minimum output power in the output power limiting
range:
∆P = P – P
o(ltg)
...