Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock

Modification of the validity date: now put at 2007.

Corrigendum 1 - Dispositifs à semiconducteurs - Méthodes d'essais mécaniques et climatiques - Partie 10: Chocs mécaniques

Modification de la date de validité : fixée maintenant à 2007.

General Information

Status: Published
Publication Date: 12-Aug-2003

ICS: 31.080.01 - Semiconductor devices in general

Technical Committee: TC 47 - Semiconductor devices

Current Stage: DELPUB - Deleted Publication
Start Date: 27-Apr-2022
Completion Date: 13-Feb-2026

Relations

Corrects: IEC 60749-10:2002 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
Effective Date: 05-Sep-2023

Revised: IEC 60749-10:2022 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock - device and subassembly
Effective Date: 05-Sep-2023

IEC 60749-10:2002/COR1:2003 - Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock
Released:8/13/2003 - Page 1 preview

Standard

IEC 60749-10:2002/COR1:2003 - Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock Released:8/13/2003

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Frequently Asked Questions

What is IEC 60749-10:2002/COR1:2003?

IEC 60749-10:2002/COR1:2003 is a standard published by the International Electrotechnical Commission (IEC). Its full title is "Corrigendum 1 - Semiconductor devices - Mechanical and climatic test methods - Part 10: Mechanical shock". This standard covers: Modification of the validity date: now put at 2007.

What is the scope of IEC 60749-10:2002/COR1:2003?

Modification of the validity date: now put at 2007.

What ICS categories does IEC 60749-10:2002/COR1:2003 belong to?

IEC 60749-10:2002/COR1:2003 is classified under the following ICS (International Classification for Standards) categories: 31.080.01 - Semiconductor devices in general. The ICS classification helps identify the subject area and facilitates finding related standards.

What standards are related to IEC 60749-10:2002/COR1:2003?

IEC 60749-10:2002/COR1:2003 has the following relationships with other standards: It is inter standard links to IEC 60749-10:2002, IEC 60749-10:2022. Understanding these relationships helps ensure you are using the most current and applicable version of the standard.

How can I access IEC 60749-10:2002/COR1:2003?

IEC 60749-10:2002/COR1:2003 is available in PDF format for immediate download after purchase. The document can be added to your cart and obtained through the secure checkout process. Digital delivery ensures instant access to the complete standard document.

Standards Content (Sample)

IEC 60749-10:2002/COR1:2003 - ...

CEI 60749-10 IEC 60749-10
(Première édition – 2002) (First edition – 2002)

DISPOSITIFS À SEMICONDUCTEURS – SEMICONDUCTOR DEVICES –
MÉTHODES D'ESSAIS MÉCANIQUES MECHANICAL AND CLIMATIC TEST METHODS –

ET CLIMATIQUES –
Part 10: Mechanical shock
Partie 10: Chocs mécaniques
CORRIGENDUM 1
Page 2 Page 3
Au lieu de: Instead of:
Le comité a décidé que le contenu de The committee has dec
...

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IEC

IEC 60749-26:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 26: Electrostatic discharge (ESD) sensitivity testing - Human body model (HBM)

IEC 60749-26:2025 establishes the procedure for testing, evaluating, and classifying components and microcircuits in accordance with their susceptibility (sensitivity) to damage or degradation by exposure to a defined human body model (HBM) electrostatic discharge (ESD). The purpose of this document is to establish a test method that will replicate HBM failures and provide reliable, repeatable HBM ESD test results from tester to tester, regardless of component type. Repeatable data will allow accurate classifications and comparisons of HBM ESD sensitivity levels. ESD testing of semiconductor devices is selected from this test method, the machine model (MM) test method (see IEC 60749‑27) or other ESD test methods in the IEC 60749 series. Unless otherwise specified, this test method is the one selected.
This edition includes the following significant technical changes with respect to the previous edition:
a) new definitions have been added;
b) text has been added to clarify the designation of and allowances resulting from “low parasitics”. The new designation includes the maximum number of pins of a device that can pass the test procedure.

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IEC 60749-21:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 21: Solderability

IEC 60749-21:2025 establishes a standard procedure for determining the solderability of device package terminations that are intended to be joined to another surface using tin-lead (SnPb) or lead-free (Pb-free) solder for the attachment. This test method provides a procedure for “dip and look” solderability testing of through hole, axial and surface mount devices (SMDs) as well as an optional procedure for a board mounting solderability test for SMDs for the purpose of allowing simulation of the soldering process to be used in the device application. The test method also provides optional conditions for ageing. This test is considered destructive unless otherwise detailed in the relevant specification.
NOTE 1 This test method does not assess the effect of thermal stresses which can occur during the soldering process. More details can be found in IEC 60749‑15 or IEC 60749‑20.
NOTE 2 If a qualitative test method is preferred, the Wetting balance test method can be found in IEC 60068-2-69.
This edition includes the following significant technical changes with respect to the previous edition:
- revision to certain operating conditions in line with current working practices.

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IEC 60749-23:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life

IEC 60749-23:2025 specifies the test used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way and is primarily for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", can be used to screen for infant-mortality related failures. The detailed use and application of burn-in is outside the scope of this document.
This edition includes the following significant technical changes with respect to the previous edition:
a) absolute stress test definitions and resultant test durations have been updated.

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IEC 60749-24:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 24: Accelerated moisture resistance - Unbiased HAST

IEC 60749-24:2025 specifies unbiased highly accelerated stress testing (HAST). HAST is performed for the purpose of evaluating the reliability of non-hermetically packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure that the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion).
This test is used to identify failure mechanisms internal to the package and is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) rearrangement of clauses to reposition requirements;
b) addition of two notes to the post-test electrical procedures.

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IEC 60749-7:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 7: Internal moisture content measurement and the analysis of other residual gases

IEC 60749-7:2025 specifies the testing and measurement of water vapour and other gas content of the atmosphere inside a metal or ceramic hermetically sealed device. The test is used as a measure of the quality of the sealing process and to provide information about the long-term chemical stability of the atmosphere inside the package. It is applicable to semiconductor devices sealed in such a manner but generally only used for high reliability applications such as military or aerospace.
Of particular interest is the measurement of the primary sealing gases (or lack thereof), the moisture content, the presence of bombing gases that are indicative of non-hermeticity (e.g. helium), oxygen to argon ratio indicative of room air ~ 20 to 1 (± 10 %), dissimilar concentration of internally sealed gases (e.g. nitrogen, helium) than originally sealed in the device package, the presence of leak test fluid (i.e. fluorocarbon, helium, air), and all other gases to determine if the device meets the specified moisture, hermeticity and other criteria. Also of interest is the measurement of all the other gases since they reflect upon the quality of the sealing process and provide information about the long-term chemical stability of the atmosphere inside the device. The presence of leak test fluorocarbon vapour in the internal gas analysis (IGA) is an indication of failure to meet leak test requirements of IEC 60749‑8.
This test is destructive.
This edition includes the following significant technical changes with respect to the previous edition:
a) This document has been re-written and rearranged to align with the text of MIL-STD-883, Method 1018.10.
b) Additional detail has been provided in the calibration requirements.

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IEC 60749-22-1:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 22-1: Bond strength - Wire bond pull test methods

IEC 60749-22-1:2025 provides a means for determining the strength and failure mode of a wire bonded to, and the corresponding interconnects on, a die or package bonding surface and can be performed on unencapsulated or decapsulated devices. This test method can be performed on gold alloy, copper alloy, and silver alloy thermosonic (ball and stitch) bonds made of wire ranging in diameter from 15 µm to 76 µm (0,000 6" to 0,003"); and on gold alloy, copper alloy, and aluminium alloy ultrasonic (wedge) bonds made of wire ranging in diameter from 18 µm to 600 µm (0,000 7" to 0,024").
This wire bond pull test method is destructive. It is appropriate for use in process development, process control, or quality assurance.
This test method allows for two distinct methods of pulling wires:
a) One method incorporates the use of a hook that is placed under the wire and is then pulled.
b) One method requires that after the wire be cut, a clamp is placed on the wire connected to the bond to be tested, and this clamp is used to pull the wire.
This test method does not include bond strength testing using wire bond shear testing. Wire bond shear testing is described in IEC 60749-22-2.
This first edition, together with the first edition of IEC 60749-22-2:2025, cancels and replaces the first edition of IEC 60749-22 published in 2002.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749-22-2).
This International Standard is to be used in conjunction with IEC 60749-22-2:2025.

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IEC 60749-22-2:2025(Main)

Semiconductor devices - Mechanical and climatic test methods - Part 22-2: Bond strength - Wire bond shear test methods

IEC 60749-22-2:2025 establishes a means for determining the strength of a ball bond to a die or package bonding surface and can be performed on pre-encapsulation or post-encapsulation devices. This measure of bond strength is extremely important in determining two features:
a) the integrity of the metallurgical bond which has been formed, and
b) the quality of ball bonds to die or package bonding surfaces.
This test method covers thermosonic (ball) bonds made with small diameter wire from 15 µm to 76 µm (0,000 6" to 0,003").
This test method can only be used when the bonds are large enough to allow for proper contact with the shear test chisel and when there are no adjacent interfering structures that would hinder the movement of the chisel. For consistent shear results the ball height will be at least 4,0 µm (0,000 6 ") for ball bonds, which is the current state of the art for bond shear test equipment at the time of this revision.
This test method can also be used on ball bonds that have had their wire removed and on to which a second bond wire (typically a stitch bond) is placed. This is known as "stitch on ball" and "reverse bonding". See Annex A for additional information.
The wire bond shear test is destructive. It is appropriate for use in process development, process control, or quality assurance, or both.
This test method can be used on ultrasonic (wedge) bonds, however its use has not been shown to be a consistent indicator of bond integrity. See Annex B for information on performing shear testing on wedge bonds.
This test method does not include bond strength testing using wire bond pull testing. Wire bond pull testing is described in IEC 60749-22-1.
This first edition, together with the first edition of IEC 60749-22-1, cancels and replaces the first edition IEC 60749-22 published in 2002. This International Standard is to be used in conjunction with IEC 60749-22-1:2025.
This edition includes the following significant technical changes with respect to the previous edition:
a) Major update, including new techniques and use of new materials (e.g. copper wire) involving a complete rewrite as two separate subparts (this document and IEC 60749‑22‑1).

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IEC 60749-34-1:2025 describes a test method that is used to determine the capability of power semiconductor modules to withstand thermal and mechanical stress resulting from cycling the power dissipation of the internal semiconductors and the internal connectors. It is based on IEC 60749-34, but is developed specifically for power semiconductor module products, including insulated-gate bipolar transistor (IGBT), metal-oxide-semiconductor field-effect transistor (MOSFET), diode and thyristor.
If there is a customer request for an individual use or an application specific guideline (for example ECPE Guideline AQG 324), details of the test method can be based on these requirements if they deviate from the content of this document.
This test caused wear-out and is considered destructive.

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Semiconductor devices - Mechanical and climatic test methods - Part 5: Steady-state temperature humidity bias life test

IEC 60749-5:2023 provides a steady-state temperature and humidity bias life test to evaluate the reliability of non-hermetic packaged semiconductor devices in humid environments. This test method is considered destructive. This edition includes the following significant technical changes with respect to the previous edition:
a) The specification of the test equipment is changed to require the need to minimize relative humidity gradients and maximize air flow between semiconductor devices under test;
b) The specification of the test equipment fixtures is changed to require the avoidance of condensation on devices under test and on electrical fixtures connecting the devices to the test equipment;
c) replacement of references to “virtual junction” with “die”.

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Semiconductor devices - Guidelines for reliability qualification plans - Part 2: Concept of mission profile

IEC 63287-2:2023 gives guidelines for the development of reliability qualification plans using the concept of mission profile, based on the environmental conditioning and proposed usage of the product. This document is not intended for military- and space-related applications.

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