prEN IEC 62276:2024

SLOVENSKI STANDARD
01-maj-2024
Monokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije
in merilne metode
Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure
Ta slovenski standard je istoveten z: prEN IEC 62276:2024
ICS:
31.140 Piezoelektrične naprave Piezoelectric devices
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.

49/1454/CDV
COMMITTEE DRAFT FOR VOTE (CDV)

PROJECT NUMBER:
IEC 62276 ED4
DATE OF CIRCULATION: CLOSING DATE FOR VOTING:
2024-03-22 2024-05-17
SUPERSEDES DOCUMENTS:
49/1425/CDV, 49/1448/RVC
IEC TC 49 : PIEZOELECTRIC, DIELECTRIC AND ELECTROSTATIC DEVICES AND ASSOCIATED MATERIALS FOR FREQUENCY
CONTROL, SELECTION AND DETECTION
SECRETARIAT: SECRETARY:
Japan Mr Masanobu Okazaki
OF INTEREST TO THE FOLLOWING COMMITTEES: PROPOSED HORIZONTAL STANDARD:

Other TC/SCs are requested to indicate their interest, if
any, in this CDV to the secretary.
FUNCTIONS CONCERNED:
EMC ENVIRONMENT QUALITY ASSURANCE SAFETY
SUBMITTED FOR CENELEC PARALLEL VOTING NOT SUBMITTED FOR CENELEC PARALLEL VOTING
Attention IEC-CENELEC parallel voting
The attention of IEC National Committees, members of
CENELEC, is drawn to the fact that this Committee Draft
for Vote (CDV) is submitted for parallel voting.
The CENELEC members are invited to vote through the
CENELEC online voting system.
This document is still under study and subject to change. It should not be used for reference purposes.
Recipients of this document are invited to submit, with their comments, notification of any relevant patent rights of
which they are aware and to provide supporting documentation.
Recipients of this document are invited to submit, with their comments, notification of any relevant “In Some
Countries” clauses to be included should this proposal proceed. Recipients are reminded that the CDV stage is
the final stage for submitting ISC clauses. (SEE AC/22/2007 OR NEW GUIDANCE DOC).

TITLE:
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and
measuring methods
PROPOSED STABILITY DATE: 2027
NOTE FROM TC/SC OFFICERS:
download this electronic file, to make a copy and to print out the content for the sole purpose of preparing National
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IEC CDV 62276 ED4 © IEC 2024 – 2 – 49/1454/CDV
1 CONTENTS
3 1 Scope . 5
4 2 Normative references . 5
5 3 Terms and definitions . 5
6 3.1 Flatness . 5
7 3.2 Appearance defects . 8
8 3.3 Other terms and definitions . 8
9 3.4 Terms and definitions related to LN and LT wafers. 9
10 4 Requirements . 10
11 4.1 General . 10
12 4.2 Diameters and tolerances . 10
13 4.3 Thickness and tolerance . 10
14 4.4 Orientation flat . 11
15 4.5 Secondary flat . 11
16 4.6 Front (propagation) surface roughness . 11
17 4.7 Back surface roughness . 11
18 4.8 Warp . 11
19 4.9 TV5, TTV . 11
20 4.10 LTV, PLTV . 12
21 4.11 Front surface defects . 12
22 4.12 Tolerance of surface orientation . 13
23 4.13 Inclusions . 13
24 4.14 Position of seed in synthetic quartz wafer . 13
25 4.15 Electrical twins in synthetic quartz wafer . 13
26 4.16 Bevel . 13
27 4.17 Bulk resistivity (conductivity) for reduced LN and reduced LT . 13
28 4.18 Transmittance . 13
29 4.19 Lightness . 13
30 4.20 Colour difference . 13
31 5 Sampling plan . 13
32 5.1 General . 13
33 5.2 Sampling. 13
34 6 Test methods . 14
35 6.1 Diameter . 14
36 6.2 Thickness . 14
37 6.3 Existence and position of OF and SF . 14
38 6.4 Dimensions of OF and SF . 14
39 6.5 Orientation of OF and SF . 14
40 6.6 TV5 . 14
41 6.7 Warp . 15
42 6.8 TTV, LTV and PLTV . 15
43 6.9 Front surface defects . 15
44 6.10 Inclusions . 15
45 6.11 Position of seed in synthetic quartz wafer . 15
46 6.12 Electrical twins in synthetic quartz wafer . 15
47 6.13 Bevel . 15

IEC CDV 62276 ED4 © IEC 2024 – 3 – 49/1454/CDV
48 6.14 Front surface and back surface roughness . 15
49 6.15 Orientation . 15
50 6.16 Bulk resistivity . 15
51 6.17 Transmittance . 15
52 6.18 Lightness . 15
53 6.19 Colour difference . 15
54 7 Identification, labelling, packaging, delivery condition . 15
55 7.1 Packaging . 15
56 7.2 Labelling and identification . 16
57 7.3 Delivery condition . 16
58 8 Measurements of orientation by X-ray. 16
59 8.1 Measurement principle . 16
60 8.2 Measurement method . 16
61 8.3 Measuring surface orientation . 17
62 8.4 Measuring OF flat orientation . 17
63 8.5 Typical wafer orientations and reference planes. 17
64 9 Measurement of bulk resistivity . 17
65 9.1 Resistance measurement . 17
66 9.2 Electrode . 18
67 9.3 Bulk resistivity . 19
68 10 Visual inspections – Front surface defects and inclusions inspection method. 19
69 11 Measurement of thickness and thickness variation . 20
70 11.1 Measurement principle . 20
71 11.1.1 Contact measurement . 20
72 11.1.2 Contactless measurement . 20
73 11.2 Sample . 20
74 11.3 Measurement method . 20
75 11.3.1 Contact measurement . 20
76 11.3.2 Contactless measurement . 20
77 12 Measurement of transmittance . 21
78 12.1 Measurement principle . 21
79 12.2 Sample . 21
80 12.3 Measurement method . 21
81 13 Measurement of lightness and colour difference . 21
82 13.1 Measurement principle . 21
83 13.2 Sample . 21
84 13.3 Measurement method . 22
85 Annex A (normative) Expression using Euler angle description for piezoelectric single
86 crystals . 24
87 Annex B (informative) Manufacturing process for SAW wafers . 27
88 B.1 Crystal growth methods . 27
89 B.1.1 Czochralski growth method . 27
90 B.1.2 Vertical Bridgman method . 29
91 B.1.3 Hydrothermal temperature gradient method . 30
92 B.2 Standard mechanical wafer manufacturing . 30
93 B.2.1 Process flow-chart . 30
94 B.2.2 Cutting both ends and cylindrical grinding . 31
95 B.2.3 Marking orientation . 31

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