EN 62276:2016
(Main)Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
Single crystal wafers for surface acoustic wave (SAW) device applications - Specifications and measuring methods
IEC 62276:2012 applies to the manufacture of synthetic quartz, lithium niobate (LN), lithium tantalate (LT), lithium tetraborate (LBO), and lanthanum gallium silicate (LGS) single crystal wafers intended for use as substrates in the manufacture of surface acoustic wave (SAW) filters and resonators. This edition includes the following significant technical changes with respect to the previous edition: - terms and definitions are rearranged in accordance with the alphabetical order; - 'reduced LN' is appended to terms and definitions; - 'reduced LT' is appended to terms and definitions; - reduction process is appended to terms and definitions.
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und Messverfahren
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques de surface (OAS) - Spécifications et méthodes de mesure
L'IEC 62276:2016 s'applique à la fabrication de tranches monocristallines de quartz synthétique, de niobate de lithium (LN), de tantalate de lithium (LT), de tétraborate de lithium (LBO) et de silicate de gallium et de lanthane (LGS) destinées à être utilisées comme substrats dans la fabrication de résonateurs et de filtres à ondes acoustiques de surface (OAS). La présente édition inclut les modifications techniques majeures suivantes par rapport à l'édition précédente: - Corrections des indications de l'angle d'Euler au Tableau 1 et des directions des axes à la Figure 3. - La définition de "cristal jumeau" n'était pas expliquée de manière suffisamment claire en 3.3.3. Elle a été révisée par une définition plus détaillée. - Le nombre maximal de canaux de gravure dans un germe de tranche de quartz qui ne traverse pas de la surface avant à la surface arrière est déterminé pour trois classes en 4.2.13 a). Les utilisateurs utilisent des parties de germes de tranches de quartz pour les dispositifs. Ces tranches de quartz nécessitent moins de canaux de gravure dans un germe pour réduire les défauts dans les dispositifs. La classification des canaux de gravure dans un germe peut nécessiter une augmentation de la qualité des tranches de quartz.
Enokristalne rezine za površinske zvočnovalovne naprave (SAW) - Specifikacije in merilne metode (IEC 62276:2016)
Standard IEC 62276:2012 se uporablja za proizvodnjo enokristalnih rezin iz sintetičnega kremena, litijevega niobata (LN), litijevega tantalata (LT), litijevega tetraborata (LBO) in lantanovega galijevega silikata (LGS), ki se uporabljajo kot substrati pri proizvodnji površinskih zvočnovalovnih filtrov (SAW) in resonatorjev. Ta izdaja vključuje naslednje pomembne tehnične spremembe glede na prejšnjo izdajo: – izrazi in definicije so urejeni v skladu z abecednim vrstnim redom; – »zmanjšan LN« je dodan izrazom in definicijam; – »zmanjšan LT« je dodan izrazom in definicijam; – »postopek za zmanjšanje« je dodan izrazom in definicijam.
General Information
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Standards Content (Sample)
SLOVENSKI STANDARD
01-februar-2017
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SIST EN 62276:2013
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Single crystal wafers for surface acoustic wave (SAW) device applications -
Specifications and measuring methods (IEC 62276:2016)
Einkristall-Wafer für Oberflächenwellen-(OFW-)Bauelemente - Festlegungen und
Messverfahren (IEC 62276:2016)
Tranches monocristallines pour applications utilisant des dispositifs à ondes acoustiques
de surface (OAS) - Spécifications et méthodes de mesure (IEC 62276:2016)
Ta slovenski standard je istoveten z: EN 62276:2016
ICS:
31.140 3LH]RHOHNWULþQHQDSUDYH Piezoelectric devices
2003-01.Slovenski inštitut za standardizacijo. Razmnoževanje celote ali delov tega standarda ni dovoljeno.
EUROPEAN STANDARD EN 62276
NORME EUROPÉENNE
EUROPÄISCHE NORM
December 2016
ICS 31.140 Supersedes EN 62276:2013
English Version
Single crystal wafers for surface acoustic wave (SAW) device
applications - Specifications and measuring methods
(IEC 62276:2016)
Tranches monocristallines pour applications utilisant des Einkristall-Wafer für Oberflächenwellen-(OFW-
dispositifs à ondes acoustiques de surface (OAS) - )Bauelemente - Festlegungen und Messverfahren
Spécifications et méthodes de mesure (IEC 62276:2016)
(IEC 62276:2016)
This European Standard was approved by CENELEC on 2016-11-28. CENELEC members are bound to comply with the CEN/CENELEC
Internal Regulations which stipulate the conditions for giving this European Standard the status of a national standard without any alteration.
Up-to-date lists and bibliographical references concerning such national standards may be obtained on application to the CEN-CENELEC
Management Centre or to any CENELEC member.
This European Standard exists in three official versions (English, French, German). A version in any other language made by translation
under the responsibility of a CENELEC member into its own language and notified to the CEN-CENELEC Management Centre has the
same status as the official versions.
CENELEC members are the national electrotechnical committees of Austria, Belgium, Bulgaria, Croatia, Cyprus, the Czech Republic,
Denmark, Estonia, Finland, Former Yugoslav Republic of Macedonia, France, Germany, Greece, Hungary, Iceland, Ireland, Italy, Latvia,
Lithuania, Luxembourg, Malta, the Netherlands, Norway, Poland, Portugal, Romania, Slovakia, Slovenia, Spain, Sweden, Switzerland,
Turkey and the United Kingdom.
European Committee for Electrotechnical Standardization
Comité Européen de Normalisation Electrotechnique
Europäisches Komitee für Elektrotechnische Normung
CEN-CENELEC Management Centre: Avenue Marnix 17, B-1000 Brussels
© 2016 CENELEC All rights of exploitation in any form and by any means reserved worldwide for CENELEC Members.
Ref. No. EN 62276:2016 E
European foreword
The text of document 49/1144/CDV, future edition 3 of IEC 62276, prepared by IEC/TC 49
“Piezoelectric, dielectric and electrostatic devices and associated materials for frequency control,
selection and detection” was submitted to the IEC-CENELEC parallel vote and approved by
CENELEC as EN 62276:2016.
The following dates are fixed:
• latest date by which the document has to be (dop) 2017-08-28
implemented at national level by
publication of an identical national
standard or by endorsement
(dow) 2019-11-28
• latest date by which the national
standards conflicting with the
document have to be withdrawn
This document supersedes EN 62276:2013.
Attention is drawn to the possibility that some of the elements of this document may be the subject of
patent rights. CENELEC [and/or CEN] shall not be held responsible for identifying any or all such
patent rights.
Endorsement notice
The text of the International Standard IEC 62276:2016 was approved by CENELEC as a European
Standard without any modification.
IEC 61019-1 NOTE Harmonized as EN 61019-1.
IEC 61019-2 NOTE Harmonized as EN 61019-2.
IEC 61019-3 NOTE Harmonized as EN 61019-3.
ISO 4287:1997 NOTE Harmonized as EN ISO 4287:1998.
Annex ZA
(normative)
Normative references to international publications
with their corresponding European publications
The following documents, in whole or in part, are normatively referenced in this document and are
indispensable for its application. For dated references, only the edition cited applies. For undated
references, the latest edition of the referenced document (including any amendments) applies.
NOTE 1 When an International Publication has been modified by common modifications, indicated by (mod), the relevant
EN/HD applies.
NOTE 2 Up-to-date information on the latest versions of the European Standards listed in this annex is available here:
www.cenelec.eu.
Publication Year Title EN/HD Year
IEC 60758 2016 Synthetic Quartz Crystal - Specifications EN 60758 2016
and guidelines for use
ISO 2859-1 1989 Sampling procedures for inspection by - -
attributes; part_1: sampling plans indexed
by acceptable quality level (AQL) for lot-by-
lot inspection
IEC 62276 ®
Edition 3.0 2016-10
INTERNATIONAL
STANDARD
Single crystal wafers for surface acoustic wave (SAW) device applications –
Specifications and measuring methods
INTERNATIONAL
ELECTROTECHNICAL
COMMISSION
ICS 31.140 ISBN 978-2-8322-3691-8
– 2 – IEC 62276:2016 IEC 2016
CONTENTS
FOREWORD . 5
INTRODUCTION . 7
1 Scope . 8
2 Normative references . 8
3 Terms and definitions . 8
3.1 Single crystals for SAW wafer . 8
3.2 Terms and definitions related to LN and LT crystals . 9
3.3 Terms and definitions related to all crystals . 9
3.4 Flatness . 10
3.5 Definitions of appearance defects . 12
3.6 Other terms and definitions . 13
4 Requirements . 14
4.1 Material specification . 14
4.1.1 Synthetic quartz crystal . 14
4.1.2 LN . 15
4.1.3 LT . 15
4.1.4 LBO, LGS . 15
4.2 Wafer specifications . 15
4.2.1 General . 15
4.2.2 Diameters and tolerances . 15
4.2.3 Thickness and tolerance . 15
4.2.4 Orientation flat . 15
4.2.5 Secondary flat . 16
4.2.6 Back surface roughness . 16
4.2.7 Warp . 16
4.2.8 TV5 or TTV . 16
4.2.9 Front (propagation) surface finish . 17
4.2.10 Front surface defects . 17
4.2.11 Surface orientation tolerance . 18
4.2.12 Inclusions . 18
4.2.13 Etch channel number and position of seed for quartz wafer . 18
4.2.14 Bevel . 18
4.2.15 Curie temperature and tolerance. 18
4.2.16 Lattice constant . 18
4.2.17 Bulk resistivity (conductivity) for reduced LN and LT . 19
5 Sampling plan . 19
5.1 General . 19
5.2 Sampling. 19
5.3 Sampling frequency . 19
5.4 Inspection of whole population . 19
6 Test methods . 19
6.1 Diameter . 19
6.2 Thickness . 20
6.3 Dimension of OF . 20
6.4 Orientation of OF . 20
6.5 TV5 . 20
IEC 62276:2016 IEC 2016 – 3 –
6.6 Warp . 20
6.7 TTV . 20
6.8 Front surface defects . 20
6.9 Inclusions . 20
6.10 Back surface roughness . 20
6.11 Orientation . 20
6.12 Curie temperature . 20
6.13 Lattice constant . 20
6.14 Bulk resistivity . 21
7 Identification, labelling, packaging, delivery condition . 21
7.1 Packaging . 21
7.2 Labelling and identification . 21
7.3 Delivery condition . 21
8 Measurement of Curie temperature . 21
8.1 General . 21
8.2 DTA method . 21
8.3 Dielectric constant method . 22
9 Measurement of lattice constant (Bond method) . 23
10 Measurement of face angle by X-ray. 24
10.1 Measurement principle . 24
10.2 Measurement method . 25
10.3 Measuring surface orientation of wafer. 25
10.4 Measuring OF flat orientation . 25
10.5 Typical
...
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